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41. 发明授权

US07749477B2 Carbon nanotube arrays 有权
标题翻译：碳纳米管阵列
公开(公告)号：US07749477B2
公开(公告)日：2010-07-06
申请号：US12317148
申请日：2008-12-19
申请人： Kai-Li Jiang , Kai Liu , Shou-Shan Fan
发明人： Kai-Li Jiang , Kai Liu , Shou-Shan Fan
IPC分类号： D01F9/12 , C23C16/00 , C40B40/18
CPC分类号： C23C16/26 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/08 , C23C16/0281 , C23C16/45523 , D01F9/127 , Y10S977/742 , Y10S977/833
摘要： A carbon nanotube array includes a plurality of carbon nanotubes. Each of the carbon nanotubes has a plurality of line marks formed on each of the carbon nanotubes. The line marks transversely extend across the carbon nanotubes. The line marks of each of the carbon nanotubes are spaced apart from each other.
摘要翻译：碳纳米管阵列包括多个碳纳米管。每个碳纳米管具有形成在每个碳纳米管上的多个线标记。线标横向延伸穿过碳纳米管。每个碳纳米管的线标记彼此间隔开。

42. 发明申请

US20100147830A1 Carbon nanotube heater 审中-公开
标题翻译：碳纳米管加热器
公开(公告)号：US20100147830A1
公开(公告)日：2010-06-17
申请号：US12658198
申请日：2010-02-04
申请人： Chang-Hong Liu , Jia-Ping Wang , Shou-Shan Fan , Kai-Li Jiang , Chen Feng , Kai Liu
发明人： Chang-Hong Liu , Jia-Ping Wang , Shou-Shan Fan , Kai-Li Jiang , Chen Feng , Kai Liu
IPC分类号： H05B3/02
CPC分类号： H05B3/145 , H05B3/265 , H05B2203/003 , H05B2203/005 , H05B2203/007 , H05B2203/011 , H05B2203/013 , H05B2203/017 , H05B2203/032 , H05B2203/034 , H05B2214/04 , Y10T29/49002 , Y10T29/49083
摘要： A linear heater includes a linear supporter, a heating element and at least two electrodes. The heating element is located on the linear supporter and includes a carbon nanotube composite structure. The carbon nanotube composite structure includes a matrix and at least one pressed carbon nanotube film. The pressed carbon nanotube film includes a plurality of carbon nanotubes. The angle between the carbon nanotubes and the surface of the heating element ranges from about 0 degrees to about 15 degrees. The at least two electrodes are electrically connected to the heating element.
摘要翻译：线性加热器包括线性支撑件，加热元件和至少两个电极。加热元件位于线性支撑体上并且包括碳纳米管复合结构。碳纳米管复合结构包括基体和至少一个压制碳纳米管膜。压制的碳纳米管膜包括多个碳纳米管。碳纳米管与加热元件表面之间的角度为约0度至约15度。至少两个电极电连接到加热元件。

43. 发明申请

US20100147829A1 Carbon nanotube heater 审中-公开
标题翻译：碳纳米管加热器
公开(公告)号：US20100147829A1
公开(公告)日：2010-06-17
申请号：US12658193
申请日：2010-02-04
申请人： Kai Liu , Chen Feng , Kai-Li Jiang , Jia-Ping Wang , Shou-Shan Fan , Chang-Hong Liu
发明人： Kai Liu , Chen Feng , Kai-Li Jiang , Jia-Ping Wang , Shou-Shan Fan , Chang-Hong Liu
IPC分类号： H05B3/02 , H05B3/10
CPC分类号： H05B3/145 , H05B3/265 , H05B2203/003 , H05B2203/005 , H05B2203/007 , H05B2203/011 , H05B2203/013 , H05B2203/017 , H05B2203/032 , H05B2203/034 , H05B2214/04 , Y10T29/49002 , Y10T29/49083
摘要： A linear heater includes a heating element and at least two electrodes. The heating element includes at least one linear carbon nanotube composite structure. The at least one linear carbon nanotube composite structure includes a matrix and a linear carbon nanotube structure. The at least two electrodes are electrically connected to the heating element.
摘要翻译：线性加热器包括加热元件和至少两个电极。加热元件包括至少一个线性碳纳米管复合结构。至少一个线性碳纳米管复合结构包括基体和线性碳纳米管结构。至少两个电极电连接到加热元件。

44. 发明申请

US20100140738A1 Semiconductor Device and Method of Forming Compact Coils for High Performance Filter 有权
标题翻译：形成用于高性能滤波器的紧凑型线圈的半导体器件和方法
公开(公告)号：US20100140738A1
公开(公告)日：2010-06-10
申请号：US12705790
申请日：2010-02-15
申请人： Kai Liu , Robert Charles Frye
发明人： Kai Liu , Robert Charles Frye
IPC分类号： H01L29/86 , H01L21/02
CPC分类号： H03H7/09 , H01F17/0006 , H01F2017/0046 , H01F2017/0073 , H03H7/1708 , H03H7/1775 , Y10T29/4902
摘要： A semiconductor device has a first coil structure formed over the substrate. A second coil structure is formed over the substrate adjacent to the first coil structure. A third coil structure is formed over the substrate adjacent to the second coil structure. The first and second coil structures are coupled by mutual inductance, and the second and third coil structures are coupled by mutual inductance. The first, second, and third coil structures each have a height greater than a skin current depth of the coil structure defined as a depth which current reduces to 1/(complex permittivity) of a surface current value. In the case of copper, the coil structures have a height greater than 5 micrometers.The first, second, and third coil structures are arranged in rounded or polygonal pattern horizontally across the substrate with a substantially flat vertical profile.
摘要翻译：半导体器件具有形成在衬底上的第一线圈结构。在与第一线圈结构相邻的衬底上形成第二线圈结构。在与第二线圈结构相邻的衬底上形成第三线圈结构。第一和第二线圈结构通过互感耦合，并且第二和第三线圈结构通过互感耦合。第一，第二和第三线圈结构各自具有高于线圈结构的皮肤电流深度的高度，其被定义为电流减小到表面电流值的1 /（复数介电常数）的深度。在铜的情况下，线圈结构的高度大于5微米。第一，第二和第三线圈结构以基本上平坦的垂直轮廓横跨衬底水平布置成圆形或多边形图案。

45. 发明申请

US20100133674A1 Compact Semiconductor Package with Integrated Bypass Capacitor and Method 有权
标题翻译：具有集成旁路电容器和方法的紧凑型半导体封装
公开(公告)号：US20100133674A1
公开(公告)日：2010-06-03
申请号：US12330381
申请日：2008-12-08
申请人： Francois Hebert , Kai Liu
发明人： Francois Hebert , Kai Liu
IPC分类号： H01L23/538 , H01L21/62
CPC分类号： H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L23/49589 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/48 , H01L2224/37011 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/48247 , H01L2224/48465 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/37099 , H01L2224/84
摘要： A top-side cooled compact semiconductor package with integrated bypass capacitor is disclosed. The top-side cooled compact semiconductor package includes a circuit substrate with terminal leads, numerous semiconductor dies bonded atop the circuit substrate, numerous elevation-adaptive interconnection plates for bonding and interconnecting top contact areas of the semiconductor dies with the circuit substrate, a first member of the elevation-adaptive interconnection plates has a first flat-top area and a second member of the elevation-adaptive interconnection plates has a second flat-top area in level with the first flat-top area, a bypass capacitor, having two capacitor terminals located at its ends, stacked atop the two interconnection plate members while being bonded thereto via the first flat-top area and the second flat-top area for a reduced interconnection parasitic impedance.
摘要翻译：公开了具有集成旁路电容器的顶侧冷却紧凑型半导体封装。顶侧冷却的紧凑型半导体封装包括具有端子引线的电路基板，接合在电路基板顶上的多个半导体管芯，用于将半导体管芯的顶部接触区域与电路基板接合和互连的许多仰角自适应互连板，第一构件所述高度自适应互连板具有第一平顶区域，并且所述仰角自适应互连板的第二构件具有与所述第一平顶区域平齐的第二平顶区域，具有两个电容器端子的旁路电容器位于其端部，并且通过第一平顶部区域和第二平顶部区域结合到两个互连板构件的顶部，以减少互连寄生阻抗。

46. 发明申请

US20100122980A1 Carbon nanotube heater 审中-公开
标题翻译：碳纳米管加热器
公开(公告)号：US20100122980A1
公开(公告)日：2010-05-20
申请号：US12655507
申请日：2009-12-31
申请人： Jia-Ping Wang , Chang-Hong Liu , Shou-Shan Fan , Kai-Li Jiang , Chen Feng , Kai Liu
发明人： Jia-Ping Wang , Chang-Hong Liu , Shou-Shan Fan , Kai-Li Jiang , Chen Feng , Kai Liu
IPC分类号： H05B3/10
CPC分类号： H05B3/145 , H05B3/265 , H05B2203/003 , H05B2203/005 , H05B2203/007 , H05B2203/011 , H05B2203/013 , H05B2203/017 , H05B2203/032 , H05B2203/034 , H05B2214/04 , Y10T29/49002 , Y10T29/49083
摘要： This disclosure related to a heater. The heater includes a heating element and at least two electrodes connected to the heating element. The heating element includes a carbon nanotube composite structure. The carbon nanotube composite structure includes a matrix and at least one carbon nanotube structure. The at least one carbon nanotube structure includes a plurality of carbon nanotubes joined by van der Waals attractive force therebetween to obtain a free-standing carbon nanotube structure.
摘要翻译：本公开涉及加热器。加热器包括加热元件和连接至加热元件的至少两个电极。加热元件包括碳纳米管复合结构。碳纳米管复合结构包括基体和至少一个碳纳米管结构。所述至少一个碳纳米管结构包括多个碳纳米管，其间通过范德华力吸引力结合，以获得独立的碳纳米管结构。

47. 发明申请

US20100108664A1 Carbon nanotube heater 审中-公开
标题翻译：碳纳米管加热器
公开(公告)号：US20100108664A1
公开(公告)日：2010-05-06
申请号：US12460817
申请日：2009-07-23
申请人： Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
发明人： Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H05B3/10
CPC分类号： H05B3/145 , H05B3/265 , H05B3/28 , H05B3/34 , H05B2203/005 , H05B2203/007 , H05B2203/011 , H05B2203/013 , H05B2203/014 , H05B2203/017 , H05B2203/032 , H05B2214/04 , Y10T29/49208 , Y10T156/10 , Y10T156/1002
摘要： An apparatus includes a hollow heater. The hollow heater has a hollow supporter, a heating element and at least two electrodes. The at least two electrodes are separately and electrically connected to the heating element. The hollow supporter defines a hollow space, the hollow supporter has an inner surface and an outer surface. The heating element disposed on one of the surfaces of the hollow supporter. The heating element includes a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes combined by wan der Waals attractive force.
摘要翻译：一种装置包括中空加热器。中空加热器具有中空的支撑件，加热元件和至少两个电极。所述至少两个电极分别电连接到所述加热元件。中空支撑件限定中空空间，中空支撑件具有内表面和外表面。加热元件设置在中空支撑体的一个表面上。加热元件包括碳纳米管结构。碳纳米管结构包括通过万德拉斯吸引力组合的多个碳纳米管。

48. 发明授权

US07688160B2 Compact coils for high performance filters 有权
标题翻译：用于高性能滤波器的紧凑型线圈
公开(公告)号：US07688160B2
公开(公告)日：2010-03-30
申请号：US11734410
申请日：2007-04-12
申请人： Kai Liu , Robert Charles Frye
发明人： Kai Liu , Robert Charles Frye
IPC分类号： H03H7/00 , H01F5/00
CPC分类号： H03H7/09 , H01F17/0006 , H01F2017/0046 , H01F2017/0073 , H03H7/1708 , H03H7/1775 , Y10T29/4902
摘要： A coil structure for a filter device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil. A portion of the second coil is oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A portion of the third coil is oriented interiorly of the second coil.
摘要翻译：用于过滤器装置的线圈结构包括沉积在衬底上并定向在第一线圈中的第一金属化。第一线圈水平延伸穿过衬底，同时保持基本平坦的垂直轮廓。第二金属化沉积在衬底上并定向在第二线圈中。第二线圈磁耦合到第一线圈。第二线圈的一部分在第一线圈内部定向。第三金属化沉积在衬底上并定向在第三线圈中。第三线圈磁耦合到第一和第二线圈。第三线圈的一部分定向在第二线圈的内部。

49. 发明授权

US07687109B2 Apparatus and method for making carbon nanotube array 有权
标题翻译：制造碳纳米管阵列的装置和方法
公开(公告)号：US07687109B2
公开(公告)日：2010-03-30
申请号：US11371997
申请日：2006-03-08
申请人： Kai-Li Jiang , Kai Liu , Shou-Shan Fan
发明人： Kai-Li Jiang , Kai Liu , Shou-Shan Fan
IPC分类号： C23C16/00 , C01B31/02 , C01B31/00 , D01C5/00
CPC分类号： C23C16/0281 , C23C16/26 , C23C16/448 , C30B25/02 , C30B29/02 , C30B29/605 , Y10S427/102
摘要： An apparatus for making an array of carbon nanotubes includes a reaction chamber with a gas inlet and a gas outlet; a quartz boat disposed in the reaction chamber; a substrate with a surface deposited with a film of first catalyst, the substrate being disposed in the quartz boat; and a second catalyst disposed in the quartz beside the substrate. A method for making an array of carbon nanotubes, comprising the steps of: (a) providing a substrate with a surface deposited with a film of first catalyst; (b) disposing a second catalyst beside the substrate to produce small amounts of hydrogen gas which flows to the first catalyst; (c) introducing a carrier gas and a carbon source gas flowing from the second catalyst to the first catalyst at a predetermined temperature; and (d) growing an array of carbon nanotubes extending from the substrate.
摘要翻译：制造碳纳米管阵列的装置包括具有气体入口和气体出口的反应室; 设置在反应室中的石英舟; 具有表面沉积有第一催化剂膜的基板，所述基板设置在所述石英舟中; 以及设置在基板旁边的石英中的第二催化剂。一种制备碳纳米管阵列的方法，包括以下步骤：（a）向基材提供沉积有第一催化剂膜的表面; （b）在基板旁边设置第二催化剂以产生流过第一催化剂的少量氢气; （c）在预定温度下引入从第二催化剂流向第一催化剂的载气和碳源气体; 和（d）生长从衬底延伸的碳纳米管阵列。

50. 发明申请

US20100072585A1 TOP EXPOSED CLIP WITH WINDOW ARRAY 有权
标题翻译：带有WINDOW ARRAY的顶级剪辑
公开(公告)号：US20100072585A1
公开(公告)日：2010-03-25
申请号：US12237593
申请日：2008-09-25
申请人： Lei Shi , Zhao Liang , Kai Liu
发明人： Lei Shi , Zhao Liang , Kai Liu
IPC分类号： H01L23/495 , H01L21/56
CPC分类号： H01L23/49562 , H01L21/565 , H01L23/3107 , H01L23/49524 , H01L23/49551 , H01L24/37 , H01L24/40 , H01L24/72 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40245 , H01L2224/73251 , H01L2224/8485 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19043 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/16 , H01L2224/72 , H01L2924/00014
摘要： A clip for a semiconductor device package may include a metal sheet including an array of windows and one or more conductive fingers. Each of the conductive fingers has a first end and a second end. The first end is electrically connected to the metal sheet at one of the windows. Each of the conductive fingers is adapted to provide electrical connection to a top semiconductor region of a semiconductor device or a lead frame at the second end.
摘要翻译：用于半导体器件封装的夹子可以包括包括窗口阵列和一个或多个导电指状物的金属片。每个导电指状物具有第一端和第二端。第一端在其中一个窗口处电连接到金属片。每个导电指状物适于提供与第二端的半导体器件的顶部半导体区域或引线框架的电连接。

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