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41. 发明申请

US20080264565A1 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas 有权
标题翻译：减少暴露于含卤素等离子体的表面侵蚀速率的方法和装置
公开(公告)号：US20080264565A1
公开(公告)日：2008-10-30
申请号：US11796211
申请日：2007-04-27
申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC分类号： C04B35/48 , C23C16/22 , H01L21/3065
CPC分类号： C23C16/4404 , C04B35/111 , C04B35/505 , C04B41/009 , C04B41/5045 , C04B41/5346 , C04B41/87 , C04B41/91 , C04B2235/3217 , C04B2235/3222 , C04B2235/3244 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2235/9692 , H01J37/32467 , C04B41/4527 , C04B41/5031 , C04B41/5042 , C04B35/10 , C04B35/14 , C04B35/581
摘要： A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.
摘要翻译：一种耐半导体加工中含卤素等离子体侵蚀的陶瓷制品。陶瓷制品包括多相陶瓷，通常包括两相至三相。陶瓷由摩尔浓度范围为约50摩尔％至约75摩尔％的氧化钇形成; 摩尔浓度范围为约10摩尔％至约30摩尔％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为约10摩尔％至约30摩尔％。

42. 发明授权

US09017765B2 Protective coatings resistant to reactive plasma processing 有权
标题翻译：耐反应等离子体处理的保护涂层
公开(公告)号：US09017765B2
公开(公告)日：2015-04-28
申请号：US12590200
申请日：2009-11-03
申请人： Jennifer Y. Sun , Ren-Guan Duan , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Kenneth S. Collins
IPC分类号： B05D3/02 , C04B41/86 , C03C8/00 , C04B41/00 , C04B41/50
CPC分类号： C04B41/86 , C03C8/00 , C03C2214/20 , C04B41/009 , C04B41/5023 , H01J37/32477 , C04B41/4539 , C04B41/5055 , C04B35/10 , C04B35/00 , C04B35/14 , C04B35/565 , C04B35/584 , C04B35/581
摘要： Embodiments of the invention relate to compositions of metal oxyfluoride-comprising glazes or metal fluoride-comprising glazes, glass ceramics, and combinations thereof which are useful as plasma-resistant solid substrates or plasma resistant protective coatings over other substrates. Also described are methods of fabricating various structures which incorporate such compositions, including solid substrates and coatings over the surface of a substrate which has a melting point which is higher than about 1600° C., such as aluminum oxide, aluminum nitride, quartz, silicon carbide, silicon nitride.
摘要翻译：本发明的实施方案涉及可用作等离子体固体基质或耐等离子体保护涂层超过其它基底的包含氟化of的釉料或含金属氟化物的釉料，玻璃陶瓷及其组合的组合物。还描述了制造包含这样的组合物的各种结构的方法，其包括在熔点高于约1600℃的基底表面上的固体基质和涂层，例如氧化铝，氮化铝，石英，硅碳化物，氮化硅。

43. 发明授权

US08758858B2 Method of producing a plasma-resistant thermal oxide coating 有权
标题翻译：制造耐等离子体热氧化物涂层的方法
公开(公告)号：US08758858B2
公开(公告)日：2014-06-24
申请号：US13374980
申请日：2012-01-25
申请人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
发明人： Jennifer Y. Sun , Li Xu , Kenneth S. Collins , Thomas Graves , Ren-Guan Duan , Senh Thach
IPC分类号： B05D3/02
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32477
摘要： A method of creating a plasma-resistant thermal oxide coating on a surface of an article, where the article is comprised of a metal or metal alloy which is typically selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. The oxide coating is formed using a time-temperature profile which includes an initial rapid heating rage, followed by a gradual decrease in heating rate, to produce an oxide coating structure which is columnar in nature. The grain size of the crystals which make up the oxide coating is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate.
摘要翻译：一种在制品的表面上产生耐等离子体热氧化物涂层的方法，其中制品由金属或金属合金组成，金属或金属合金通常选自钇，钕，钐，铽，镝，铒，镱，钪，铪，铌或其组合。使用时间 - 温度曲线形成氧化物涂层，其包括初始的快速加热，然后逐渐降低加热速率，以产生本质上为柱状的氧化物涂层结构。构成氧化物涂层的晶体的晶粒尺寸在氧化物涂层的表面比在氧化物涂层和金属或金属合金衬底之间的界面处大，并且氧化物涂层在氧化物之间的界面处被压缩涂层和金属或金属合金基材。

44. 发明授权

US08623527B2 Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxide 有权
标题翻译：包括由氧化钇和氧化锆的固溶体形成的涂层的半导体处理装置
公开(公告)号：US08623527B2
公开(公告)日：2014-01-07
申请号：US13199521
申请日：2011-08-31
申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC分类号： B32B18/00 , C04B35/505 , C04B35/486
CPC分类号： C04B35/505 , B32B18/00 , C04B35/486 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3229 , C04B2235/3244 , C04B2235/6582 , C04B2235/668 , C04B2235/762 , C04B2235/80 , C04B2235/9669 , H01J37/32467 , H01J37/32504 , Y10T428/31678
摘要： A ceramic coated article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic coated article includes an aluminum substrate coated with a solid solution coating formed from a combination of yttrium oxide and zirconium oxide. The ceramic coating is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.
摘要翻译：用于半导体加工的陶瓷涂层制品，其耐受含卤素等离子体的侵蚀。陶瓷涂覆制品包括涂覆有由氧化钇和氧化锆的组合形成的固溶体涂层的铝基材。陶瓷涂层由摩尔浓度范围为约90摩尔％至约70摩尔％的氧化钇和摩尔浓度为约10摩尔％至约30摩尔％的氧化锆形成。在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇。

45. 发明申请

US20130022838A1 Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber 有权
标题翻译：减少等离子体处理室中的半导体处理装置部件的表面上的等离子体电弧的方法
公开(公告)号：US20130022838A1
公开(公告)日：2013-01-24
申请号：US13573354
申请日：2012-09-10
申请人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Kenneth S. Collins , Ren-Guan Duan , Senh Thach , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C04B35/505 , B32B18/00
CPC分类号： C04B35/505 , C04B35/486 , C04B35/495 , C04B35/50 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/404 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/81 , Y10T428/31
摘要： Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.
摘要翻译：在半导体加工条件下耐腐蚀/腐蚀等离子体腐蚀/腐蚀的特种陶瓷材料。腐蚀性等离子体可以是含卤素等离子体。特种陶瓷材料已经被修改以提供抑制等离子体电弧势的受控电阻率。

46. 发明申请

US20100160143A1 Semiconductor processing apparatus comprising a solid solution ceramic of yttrium oxide and zirconium oxide 有权
标题翻译：包括氧化钇和氧化锆的固溶陶瓷的半导体处理装置
公开(公告)号：US20100160143A1
公开(公告)日：2010-06-24
申请号：US12660068
申请日：2010-02-19
申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC分类号： C04B35/482 , H01L21/306
CPC分类号： C04B35/505 , B32B18/00 , C04B35/486 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3229 , C04B2235/3244 , C04B2235/6582 , C04B2235/668 , C04B2235/762 , C04B2235/80 , C04B2235/9669 , H01J37/32467 , H01J37/32504 , Y10T428/31678
摘要： A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.
摘要翻译：用于半导体加工的固体溶液陶瓷制品，其耐受含卤素等离子体侵蚀。含固溶体的陶瓷制品由氧化钇和氧化锆的组合形成。在第一个实施方案中，陶瓷制品包括由摩尔浓度为约90摩尔％至约70摩尔％的氧化钇形成的陶瓷，摩尔浓度为约10摩尔％至约30摩尔％的氧化锆，。在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇。

47. 发明申请

US20090142247A1 Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide 审中-公开
标题翻译：化学处理以减少包含碳化硅的半导体加工部件中加工引起的表面下损伤
公开(公告)号：US20090142247A1
公开(公告)日：2009-06-04
申请号：US11999083
申请日：2007-12-03
申请人： Jennifer Y. Sun , Irene A. Chou , Li Xu , Kenneth S. Collins , Thomas Graves
发明人： Jennifer Y. Sun , Irene A. Chou , Li Xu , Kenneth S. Collins , Thomas Graves
IPC分类号： H01L21/302 , C01B31/36
CPC分类号： C23C16/4404 , C04B41/009 , C04B41/5353 , C04B41/91 , C04B35/565
摘要： Method of removing damaged silicon carbide crystalline structure from the surface of a silicon carbide component. The method comprises at least two liquid chemical treatment processes, where one treatment converts silicon carbide to silicon oxide, and another treatment removes silicon oxide. The liquid chemical treatments are typically carried out at a temperature below about 100° C. The time period required to carry out the method is generally less than about 100 hours.
摘要翻译：从碳化硅组件的表面去除损坏的碳化硅晶体结构的方法。该方法包括至少两种液体化学处理方法，其中一种处理将碳化硅转化为氧化硅，另一种处理将氧化硅除去。液体化学处理通常在低于约100℃的温度下进行。进行该方法所需的时间通常小于约100小时。

48. 发明申请

US20080213496A1 Method of coating semiconductor processing apparatus with protective yttrium-containing coatings 审中-公开
标题翻译：用保护性钇涂层涂覆半导体处理装置的方法
公开(公告)号：US20080213496A1
公开(公告)日：2008-09-04
申请号：US11890221
申请日：2007-08-02
申请人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
发明人： Jennifer Y. Sun , Shun Jackson Wu , Senh Thach , Ananda Kumar , Robert W. Wu , Hong Wang , Yixing Lin , Clifford C. Stow , Jim Dempster , Li Xu , Kenneth S. Collins , Ren-Guan Duan , Thomas Graves , Xiaoming He , Jie Yuan
IPC分类号： C23C4/10 , C23C14/34
CPC分类号： C23C28/042 , C23C4/11 , C23C4/18 , C23C16/4404
摘要： Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
摘要翻译：将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。特种陶瓷材料含有至少一种含氧化钇的固溶体。已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

49. 发明申请

US20180121557A1 Multi-Tiered Safety Control System and Methods for Online Communities 审中-公开
公开(公告)号：US20180121557A1
公开(公告)日：2018-05-03
申请号：US15859257
申请日：2017-12-29
申请人： Mark A. Dinan , Jennifer Y. Sun , Ann M. Pickard , James M. Bower , Munir F. Bhatti , Joseph Vaughn Lewis Cook
发明人： Mark A. Dinan , Jennifer Y. Sun , Ann M. Pickard , James M. Bower , Munir F. Bhatti , Joseph Vaughn Lewis Cook
IPC分类号： G06F17/30 , H04L12/58
CPC分类号： G06F16/9535 , H04L51/046 , H04L51/12 , H04L51/32
摘要： A system and method of maintaining community safety standards within an Internet community. A balance is achieved between open communication and costly supervision of an immersive online community by use of automated algorithms, human supervision and peer monitoring. An automated filtering process is used in conjunction with an evaluation and penalty process. The filter is enhanced over time. A peer-to-peer control and peer-to-administrator reporting scheme complete the system and methods to synergistically maintain safety and set standards within the community.

50. 发明授权

US08067067B2 Clean, dense yttrium oxide coating protecting semiconductor processing apparatus 有权
标题翻译：清洁，致密的氧化钇涂层保护半导体加工设备
公开(公告)号：US08067067B2
公开(公告)日：2011-11-29
申请号：US10898113
申请日：2004-07-22
申请人： Jennifer Y. Sun , Senh Thach , Jim Dempster , Li Xu
发明人： Jennifer Y. Sun , Senh Thach , Jim Dempster , Li Xu
IPC分类号： C23C16/00 , C23C4/00 , C23C4/10 , C23C4/06 , C23C4/04 , C23C4/08 , C23C16/08 , C23F1/00 , H01L21/306 , B05D1/08 , B05D1/02 , B05D1/32 , B05D1/36 , H05H1/26 , H05H1/52
CPC分类号： C30B35/00 , C23C4/11 , C23C4/18 , C23C14/00 , C23C16/4404 , C23C28/042 , Y10S134/902 , Y10T428/26
摘要： Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal/flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.
摘要翻译：本文公开了一种用于施加用于半导体处理装置的耐等离子体涂层的方法。将涂层施加在通常包括2000系列或5000至7000系列的铝合金的基底上。涂层通常包含Y，Sc，La，Ce，Eu，Dy等的氧化物或氟化物，或钇 - 铝 - 石榴石（YAG）。涂层可以进一步包含约20体积％或更少的Al 2 O 3。涂层通常使用选自热/火焰喷涂，等离子喷涂，溅射和化学气相沉积（CVD）的技术施加到铝合金基板或阳极氧化铝合金基板的表面上。为了提供所需的耐腐蚀性，必须将涂层置于压缩状态。这是通过在施加涂层期间控制沉积条件来实现的。

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