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    • 42. 发明申请
    • WIPER APPARATUS
    • WIPER装置
    • US20140325787A1
    • 2014-11-06
    • US14344206
    • 2012-08-08
    • Koji IwazakiJun Abe
    • Koji IwazakiJun Abe
    • B60S1/34
    • B60S1/34B60S1/0452B60S1/245
    • A wiper apparatus is provided with: a wiper arm (14) which is swung about a rotation shaft (18); and a wiper motor (13) for generating drive power to be transmitted to the rotation shaft (18), the wiper apparatus is provided with a power transmission mechanism (19) for transmitting the drive power from the rotation shaft (18) to the wiper arm (14), the power transmission mechanism (19) is provided with: a link member (19a) fixed to the rotation shaft (18); and a support shaft (19b) fixed at a position on the link member (19a), which deviates from the rotation shaft (18), and configured to support the wiper arm (14), a coupling section between the support shaft (19b) and the wiper arm (14) is positioned in front of the front end of the front glass (11), and at least one part of the wiper motor (13) is located within the projection region of the front glass (11), thereby suppressing the increase in the number of parts.
    • 刮水器装置设置有:围绕旋转轴(18)摆动的刮水器臂(14); 以及用于产生要传递到旋转轴(18)的驱动力的刮水器马达(13),刮水器装置设置有用于将驱动力从旋转轴(18)传递到刮水器的动力传递机构(19) 臂(14),动力传递机构(19)设置有:固定到旋转轴(18)的连杆构件(19a); 以及支撑轴(19b),其固定在与所述旋转轴(18)偏离的所述连杆构件(19a)上的位置,并且构造成支撑所述刮水器臂(14),所述支撑轴(19b) 并且所述刮水器臂(14)位于所述前玻璃(11)的前端的前方,所述刮水器马达(13)的至少一部分位于所述前玻璃(11)的突出部内,由此 抑制零件数量的增加。
    • 43. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US08852386B2
    • 2014-10-07
    • US12883761
    • 2010-09-16
    • Hachishiro IizukaYuki MochizukiJun Abe
    • Hachishiro IizukaYuki MochizukiJun Abe
    • H01L21/3065H01J37/32
    • H01J37/32834H01J37/32091
    • A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.
    • 一种等离子体处理装置,包括:喷淋头,其通过设置在面对安装台的淋浴头的面对面上的多个气体排出孔向喷射模式的基板供给气体; 多个排气孔设置在淋浴喷头的相对面上; 沿着所述安装台的圆周安装的可垂直移动的环形构件,并且构造成在升高位置形成由所述安装台,所述淋浴头和所述环形构件包围的处理空间; 多个气体供给孔,其在所述环状部件的内壁上开口,向所述处理空间供给气体; 以及在所述环状构件的内壁中开口的多个排气孔,以对所述处理空间进行抽真空。
    • 44. 发明申请
    • ASSIST GRIP FOR VEHICLE
    • 协助车辆
    • US20130026776A1
    • 2013-01-31
    • US13408326
    • 2012-02-29
    • Jun AbeHideki Oino
    • Jun AbeHideki Oino
    • B60N3/02
    • B60N3/023
    • There is provided an assist grip for a vehicle capable of gripping a grip main body easily when in use and applying force thereon and facilitating movement of getting off. The assist grip 1 for the vehicle includes the grip main body 2 for supporting getting out movement from the seat 51 of the occupant, which is provided in the lower part of the door opening 10 beside the seat 51, where the grip main body 2 is provided in a manner capable of raising and lowering in an outward direction of the vehicle. Accordingly, since the grip main body 2 falls outward of the vehicle at the time of use of the assist grip 1, a portion to which a hand of the occupant is applied becomes large, and a flexibility of posture change increases, and getting out of the occupant becomes easy.
    • 提供了一种用于能够在使用中容易地夹持把手主体并且在其上施加力并有助于下车的移动的车辆的辅助把手。 用于车辆的辅助把手1包括握持主体2,其用于支撑从乘员座椅51移出的位置,该主体设置在座椅51的旁边的门开口10的下部,手柄主体2为 以能够在车辆的向外方向上升降的方式设置。 因此,由于在使用辅助把手1时手柄主体2向车外方向突出,所以使用者的手的一部分变大,姿势变化的灵活性增加, 乘客变得容易。
    • 45. 发明申请
    • PLASMA PROCESSING APPARATUS AND SHOWER HEAD
    • 等离子体加工设备和淋浴头
    • US20110067815A1
    • 2011-03-24
    • US12888664
    • 2010-09-23
    • Hachishiro IizukaJun AbeYuki Mochizuki
    • Hachishiro IizukaJun AbeYuki Mochizuki
    • H01L21/3065
    • H01J37/3244H01J37/3266
    • A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.
    • 一种等离子体处理装置,包括安装在用于处理基板的处理室内的淋浴喷头,面对用于将基板安装在其上的安装台,并通过多个气体排出孔向喷射基板喷射气体 设置在所述淋浴喷头的面向所述安装台的面对面上; 多个排气孔,其形成为穿过所述淋浴喷头,从所述喷淋头的相对表面延伸到与所述相对表面相反的表面; 多个杆状磁体柱直立放置在与相对表面侧的排气孔连通的排气空间中; 以及驱动单元,其通过移动至少一部分磁体柱来改变磁体柱和排气孔之间的距离。
    • 46. 发明申请
    • SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD USING SAME
    • 基板处理装置和基板处理方法
    • US20100243607A1
    • 2010-09-30
    • US12750015
    • 2010-03-30
    • Takeshi OhseShinji HimoriJun AbeNorikazu Yamada
    • Takeshi OhseShinji HimoriJun AbeNorikazu Yamada
    • C23F1/08C23F1/00
    • H01J37/02H01J37/32091H01J37/32146H01J37/32165
    • A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
    • 基板处理方法使用基板处理装置,其包括用于容纳基板的室,用于安装基板的下电极,用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态,则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时,施加单元。