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    • 45. 发明授权
    • Energetic particle beam deposition system
    • 能量粒子束沉积系统
    • US4250009A
    • 1981-02-10
    • US40339
    • 1979-05-18
    • Jerome J. CuomoRichard J. GambinoJames M. HarperJohn D. Kupstis
    • Jerome J. CuomoRichard J. GambinoJames M. HarperJohn D. Kupstis
    • C23F4/00C23C14/34C23C14/46C23C15/00
    • C23C14/46
    • An energetic particle beam is accelerated towards a sputtering target. The target is located at an angle to the path of the beam (although it need not be). The target material which is dislodged by the ion beam can be directed towards a substrate. The material is composed of atoms forming both positive and negative ions. The voltage difference between the target and the substrate can be adjusted to be positive or negative so that either positive ions or negative ions can be accelerated to the substrate by means of adjusting the target-substrate voltage difference. In addition, means can be provided for collecting electrons included with the ions moving towards and away from the target. Such means can comprise a grid located adjacent to the target. It is also possible that electrons can be collected by means of an electric field confining structure which permits the ions to pass through while the electrons are deflected. Techniques. used elsewhere to separate electrons from ions have included bending beams to fit through apertures and use of magnetic grids to deflect electrons differentially. In both cases, the degree of deflection of ions is far different because the mass of an ion is large relative to the mass of an electron which makes separation easy. The advantage here is that the sputter deposition makes it possible to deposit positive and negative ions alternately or in a desired graded mixture at an interface under gradually changing voltage control.
    • 高能粒子束朝向溅射靶加速。 目标位于与梁的路径成一定角度(尽管不需要)。 通过离子束移动的目标材料可以被引向衬底。 该材料由形成正离子和负离子的原子组成。 可以将目标和衬底之间的电压差调整为正或负,以便通过调整目标衬底电压差来将正离子或负离子加速到衬底。 此外,可以提供用于收集包含在离开靶子和远离靶的离子中的电子的装置。 这种装置可以包括位于与目标相邻的网格。 也可以通过允许离子在电子被偏转的同时通过的电场约束结构来收集电子。 技巧 在其他地方使用离子分离电子的方法包括弯曲梁以适应穿孔,并使用磁栅来使电子差异化。 在这两种情况下,离子的偏转程度是非常不同的,因为离子的质量相对于电子的质量大,这使得分离变得容易。 这里的优点是,溅射沉积使得可以在逐渐变化的电压控制下交替地或者在期望的分级混合物在界面处沉积正离子和负离子。
    • 46. 发明授权
    • Amorphous metallic and nitrogen containing alloy films
    • 无定形金属和含氮合金膜
    • US4231816A
    • 1980-11-04
    • US866115
    • 1977-12-30
    • Jerome J. CuomoAmitava GanguleeJohn Kobliska
    • Jerome J. CuomoAmitava GanguleeJohn Kobliska
    • C22C1/00C22C45/04C23C14/00C23C14/14C23C30/00H01C7/00H01F10/12H01F10/13H01F10/14H01F41/18C04B35/00
    • C22C45/04C23C14/0036C23C30/00H01C7/006H01F10/131Y10T428/31522
    • These amorphous metal-alloy films include nitrogen, greater than about one atomic percent at least one transition metal selected from Cr, Fe, Co and Ni with at least one element forming an amorphous alloy therewith, selected from the "glass forming" elements, i.e., B, Si, Al, C and P. The alloys can be formed by deposition in a vacuum chamber. When films are sputtered, the target is composed of the above alloy elements with at least one element selected from each of the transition metal and glass forming element groups. Sputtering occurs in an atmosphere above about 2% vol. N.sub.2 gas mixed with an inert gas, e.g., Ar. Alloys produced include N, i.e., (Co-Fe-B)N and (Fe-B)N. Above about 2 atomic % N in the film, films have lower values of saturation magnetization 4.pi.M.sub.s. Above a 2% vol. N.sub.2 gas in the plasma, electrical resistivity increases. Over 0.5% vol. N.sub.2 gas in the plasma, the film's effective perpendicular anisotropy field H.sub.k.sup.* increases. For (Co-Fe-B)N, the anisotropy direction moves from in plane to perpendicular above 2% vol. N.sub.2 plasmas. For (Fe-B)N, H.sub.k.sup.* increases with N.sub.2 up to 10% vol. N.sub.2 plasma. The N% in a film varies linearly with the log of N.sub.2 % vol. Films show markedly improved adhesion, corrosion resistance and hardness. Magnetic thermal stability increases with N.sub.2 above about 5% vol. N.sub.2 in a plasma. Structural and magnetic properties are stable for annealing up to 400.degree. C.
    • 这些非晶金属合金膜包括大于约1原子%的选自Cr,Fe,Co和Ni中的至少一种过渡金属与选自“玻璃形成”元素的至少一种元素形成非晶合金的氮,即 ,B,Si,Al,C和P.合金可以通过沉积在真空室中形成。 当溅射薄膜时,靶材由上述合金元素组成,其中至少一种元素选自过渡金属和玻璃形成元素组。 溅射发生在高于约2%vol的气氛中。 与惰性气体混合的N 2气体,例如Ar。 所生产的合金包括N,即(Co-Fe-B)N和(Fe-B)N。 膜中的约2原子%N以上,膜具有较低的饱和磁化强度, 等离子体中的N2气体,电阻率增加。 超过0.5% 等离子体中的N2气体,膜的有效垂直各向异性场Hk *增加。 对于(Co-Fe-B)N,各向异性方向从平面延伸到垂直于2%vol以上。 N2等离子体。 对于(Fe-B)N,Hk *随着N2增加至10体积%。 N2等离子体。 膜中的N%随着N2%体积的对数线性变化。 膜显示出显着改善的附着力,耐腐蚀性和硬度。 磁性热稳定性随着N2高于约5%vol而增加。 N2在等离子体中。 结构和磁性能在400℃退火时是稳定的。
    • 47. 发明授权
    • Beam addressable film using amorphous magnetic material
    • 使用非晶磁性材料的光束寻址膜
    • US3949387A
    • 1976-04-06
    • US284512
    • 1972-08-29
    • Praveen ChaudhariJerome J. CuomoRichard J. GambinoThomas R. McGuire
    • Praveen ChaudhariJerome J. CuomoRichard J. GambinoThomas R. McGuire
    • G11C11/14G11B11/10G11B11/105G11B11/11G11C13/06G11C19/08H01F10/00H01F10/12H01F10/13
    • G11B11/11G11B11/10G11B11/10504G11B11/10515G11B11/10517G11B11/10526G11B11/10545G11B11/10591G11C13/06G11C19/0808G11C19/085G11C19/0866H01F10/13H01F10/137
    • A beam addressable file using as a storage medium an amorphous magnetic composition having uniaxial anisotropy. The storage medium can be prepared in thin film or bulk form or as particles in a binder. The storage medium can be comprised of a single element or a multicomponent system where at least one of the components has an unpaired spin so that the composition has a net magnetic moment. The storage comosition exists in a microcrystalline structure (i.e., it has localized atomic ordering over a distance 25-100 angstroms) and also in a substantially amorphous structure (i.e., when the composition has localized atomic ordering only over distances less than 25 angstroms). Binary and ternary compositions, either alloys or compounds, are suitable. particularly good examples are combinations of rare earth elements and transition metal elements. The magnetic properties of these amorphous magnetic compositions are easily changed during fabrication or after fabrication, and the compositions can be doped readily without adversely affecting magnetic properties. Either electron beams or light beams can be used to write information into the storage medium and optical readout is generally preferred. Curie point writing or compensation point writing is used.
    • 使用具有单轴各向异性的非晶磁性组合物作为存储介质的光束可寻址文件。 存储介质可以以薄膜或本体形式或作为粘合剂中的颗粒制备。 存储介质可以由单个元件或多组分系统组成,其中至少一个组件具有不成对的纺丝,使得组合物具有净磁矩。 存储组合存在于微晶结构中(即,其在25-100埃的距离上具有局部原子排列),并且还存在于基本上非晶结构中(即,当组合物仅在小于25埃的距离处具有局部原子排列时)。 二元和三元组合物,合金或化合物都是合适的。 特别好的例子是稀土元素和过渡金属元素的组合。 这些非晶磁性组合物的磁性能在制造过程中或在制造之后容易改变,并且可以容易地掺杂组合物而不会不利地影响磁性能。 可以使用电子束或光束将信息写入存储介质,并且通常优选光学读出。 使用居里点写入或补偿点写入。
    • 49. 发明授权
    • Pattern release film between two laminated surfaces
    • 两层压表面之间的图案剥离膜
    • US06627034B1
    • 2003-09-30
    • US09625903
    • 2000-07-26
    • Stefan UferJerome J. Cuomo
    • Stefan UferJerome J. Cuomo
    • B32B3112
    • B32B7/06B32B27/08B32B27/281B32B37/0076B32B2315/02B32B2379/08Y10T156/1056Y10T156/1064
    • A method of forming a laminate structure comprises providing a first substrate and a second substrate each having first and second substrate surfaces respectively, and wherein the surfaces are present in an opposed spaced apart relationship; contacting at least one of the first or second substrate surfaces with a release material such that a portion of the first or second substrate surface is covered with the release material while the remainder of the first or second substrate surface is not covered with the release material; bringing the first and second substrate surfaces of the first and second substrates into contact with each other; and subjecting the substrates to conditions such that the portions of the first and second substrate surfaces not covered with release material become bonded to one another and a laminate structure is formed. The portion of the first or second substrate surface covered with the release material allows the first and second substrates to separate from each other such that an opening is formed therebetween that is substantially coincident with the portion covered with the release material.
    • 形成层压结构的方法包括提供分别具有第一和第二基板表面的第一基板和第二基板,并且其中所述表面以相对间隔的关系存在; 使第一或第二基板表面中的至少一个与释放材料接触,使得第一或第二基板表面的一部分被释放材料覆盖,而第一或第二基板表面的其余部分未被释放材料覆盖; 使第一和第二基板的第一和第二基板表面彼此接触; 并且使基板经受使得没有被剥离材料覆盖的第一和第二基板表面的部分彼此粘合并形成层压结构的条件。 用释放材料覆盖的第一或第二基底表面的部分允许第一和第二基底彼此分离,使得在其间形成与被释放材料覆盖的部分基本重合的开口。