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41. 发明申请

US20090173933A1 Thermal Sensor with a Silicon/Germanium Superlattice Structure 有权
标题翻译：具有硅/锗超晶格结构的热传感器
公开(公告)号：US20090173933A1
公开(公告)日：2009-07-09
申请号：US12236480
申请日：2008-09-23
申请人： Jer-Shen Maa , Jinke Tang , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
发明人： Jer-Shen Maa , Jinke Tang , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
IPC分类号： H01L29/15
CPC分类号： H01L31/035254 , B82Y20/00 , H01L27/14649 , H01L31/028 , H01L31/101 , H01L31/1804 , Y02P70/521
摘要： A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first substrate is bonded to the second substrate, forming a bonded substrate. An electrical connection is formed between the SiGe superlattice structure and the CMOS device, and a cavity is formed between the SiGe superlattice structure and the bonded substrate.
摘要翻译：硅/锗（SiGe）超晶格热传感器具有相应的制造方法。该方法在第一Si衬底中形成有源CMOS器件，并在第二绝缘体上（SOI）衬底上形成SiGe超晶格结构。第一基板与第二基板接合，形成接合基板。在SiGe超晶格结构和CMOS器件之间形成电连接，并且在SiGe超晶格结构和键合衬底之间形成空穴。

42. 发明授权

US07470573B2 Method of making CMOS devices on strained silicon on glass 失效
标题翻译：在玻璃上的应变硅上制造CMOS器件的方法
公开(公告)号：US07470573B2
公开(公告)日：2008-12-30
申请号：US11060878
申请日：2005-02-18
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Yoshi Ono , Sheng Teng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L21/30 , H01L21/84
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1266 , H01L29/7842 , H01L29/78621
摘要： A method of making CMOS devices on strained silicon on glass includes preparing a glass substrate, including forming a strained silicon layer on the glass substrate; forming a silicon oxide layer by plasma oxidation of the strained silicon layer; depositing a layer of doped polysilicon on the silicon oxide layer; forming a polysilicon gate; implanting ions to form a LDD structure; depositing and forming a spacer dielectric on the gate structure; implanting and activation ions to form source and drain structures; depositing a layer of metal film; annealing the layer of metal film to form salicide on the source, drain and gate structures; removing any unreacted metal film; depositing a layer of interlayer dielectric; and forming contact holes and metallizing.
摘要翻译：在玻璃上的应变硅上制造CMOS器件的方法包括制备玻璃衬底，包括在玻璃衬底上形成应变硅层; 通过应变硅层的等离子体氧化形成氧化硅层; 在氧化硅层上沉积掺杂多晶硅层; 形成多晶硅栅极; 注入离子以形成LDD结构; 在栅极结构上沉积和形成间隔电介质; 植入和激活离子以形成源和漏结构; 沉积一层金属膜; 退火金属膜层，在源极，漏极和栅极结构上形成硅化物; 去除任何未反应的金属膜; 沉积层间电介质层; 并形成接触孔和金属化。

43. 发明授权

US07378309B2 Method of fabricating local interconnects on a silicon-germanium 3D CMOS 有权
标题翻译：在硅 - 锗3D CMOS上制造局部互连的方法
公开(公告)号：US07378309B2
公开(公告)日：2008-05-27
申请号：US11376542
申请日：2006-03-15
申请人： Jong-Jan Lee , Paul J. Schuele , Sheng Teng Hsu , Jer-Shen Maa
发明人： Jong-Jan Lee , Paul J. Schuele , Sheng Teng Hsu , Jer-Shen Maa
IPC分类号： H01L21/8234
CPC分类号： H01L21/823871 , H01L21/02532 , H01L21/02667 , H01L21/28525 , H01L21/76895 , H01L27/11 , H01L27/1108
摘要： A method of fabricating local interconnect on a silicon-germanium 3D CMOS includes fabricating an active silicon CMOS device on a silicon substrate. An insulator layer is deposited on the silicon substrate and a seed window is opened through the insulator layer to the silicon substrate and to a silicon CMOS device gate. A germanium thin film is deposited on the insulator layer and into windows, forming a contact between the germanium thin film and the silicon device. The germanium thin film is encapsulated in a dielectric material. The wafer is heated at a temperature sufficient to flow the germanium, while maintaining the other layers in a solid condition. The wafer is cooled to solidify the germanium as single crystal germanium and as polycrystalline germanium, which provides local interconnects. Germanium CMOS devices may be fabricated on the single crystal germanium thin film.
摘要翻译：在硅 - 锗3D CMOS上制造局部互连的方法包括在硅衬底上制造有源硅CMOS器件。绝缘体层沉积在硅衬底上，并且晶种窗通过绝缘体层向硅衬底和硅CMOS器件栅极打开。在绝缘体层和窗口上沉积锗薄膜，形成锗薄膜和硅器件之间的接触。锗薄膜被封装在电介质材料中。在足以使锗流动的温度下加热晶片，同时将其它层保持在固体状态。将晶片冷却以将锗固化为单晶锗和作为多晶锗，其提供局部互连。可以在单晶锗薄膜上制造锗CMOS器件。

44. 发明申请

US20080067499A1 Silicon/germanium superlattice thermal sensor 失效
公开(公告)号：US20080067499A1
公开(公告)日：2008-03-20
申请号：US11522003
申请日：2006-09-15
申请人： Jer-Shen Maa , Jinke Tang , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
发明人： Jer-Shen Maa , Jinke Tang , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L31/035254 , B82Y20/00 , H01L27/14649 , H01L31/028 , H01L31/101 , H01L31/1804 , Y02P70/521
摘要： A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first substrate is bonded to the second substrate, forming a bonded substrate. An electrical connection is formed between the SiGe superlattice structure and the CMOS device, and a cavity is formed between the SiGe superlattice structure and the bonded substrate.

45. 发明授权

US07226504B2 Method to form thick relaxed SiGe layer with trench structure 失效
标题翻译：形成具有沟槽结构的厚松弛SiGe层的方法
公开(公告)号：US07226504B2
公开(公告)日：2007-06-05
申请号：US10062336
申请日：2002-01-31
申请人： Jer-Shen Maa , Douglas James Tweet , Tingkai Li , Jong-Jan Lee , Sheng Teng Hsu
发明人： Jer-Shen Maa , Douglas James Tweet , Tingkai Li , Jong-Jan Lee , Sheng Teng Hsu
IPC分类号： C30B33/02
CPC分类号： H01L21/3247 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02694 , H01L21/324
摘要： A method of forming a SiGe layer having a relatively high germanium content and a relatively low threading dislocation density includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the germanium content of the SiGe layer is greater than 20%, by atomic ratio; implanting H+ ions into the SiGe layer at a dose of between about 1·1016 cm−2 to 5·1016 cm−2, at an energy of between about 20 keV to 45 keV; patterning the SiGe layer with photoresist; plasma etching the structure to form trenches about regions; removing the photoresist; and thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an inert atmosphere at a temperature of between about 650° C. to 950° C. for between about 30 seconds and 30 minutes.
摘要翻译：形成具有较高锗含量和较低穿透位错密度的SiGe层的方法包括制备硅衬底; 将SiGe层沉积至约100nm至500nm的厚度，其中SiGe层的锗含量按原子比大于20％; 将H +离子以约1.10×16cm -2至0.0010±0.2cm的剂量注入SiGe层中， SUP>，在约20keV至45keV之间的能量; 用光致抗蚀剂图案化SiGe层; 等离子体蚀刻结构以形成关于区域的沟槽; 去除光致抗蚀剂; 以及对基板和SiGe层进行热退火，以在惰性气氛中在约650℃至950℃的温度下放置SiGe层约30秒至30分钟。

46. 发明授权

US07176072B2 Strained silicon devices transfer to glass for display applications 失效
标题翻译：应变硅器件转移到玻璃上进行显示应用
公开(公告)号：US07176072B2
公开(公告)日：2007-02-13
申请号：US11046411
申请日：2005-01-28
申请人： Jong-Jan Lee , Jer-Shen Maa , Sheng Teng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Sheng Teng Hsu
IPC分类号： H01L21/84 , H01L21/00 , H01L21/658
CPC分类号： H01L27/1266 , H01L27/1203 , H01L27/1214 , H01L29/78687
摘要： A method of fabricating strained silicon devices for transfer to glass for display applications includes preparing a wafer having a silicon substrate thereon; forming a relaxed SiGe layer on the silicon substrate; forming a strained silicon layer on the relaxed SiGe layer; fabricating an IC device on the strained silicon layer; depositing a dielectric layer on the wafer to cover a gate module of the IC device; smoothing the dielectric; implanting ions to form a defect layer; cutting the wafer into individual silicon dies; preparing a glass panel and the silicon dies for bonding; bonding the silicon dies onto the glass panel to form a bonded structure; annealing the bonded structure; splitting the bonded structure along the defect layer; removing the remaining silicon layer from the silicon substrate and relaxed SiGe layer on the silicon die on the glass panel; and completing the glass panel circuitry.
摘要翻译：制造用于转移到用于显示器应用的玻璃的应变硅器件的方法包括制备其上具有硅衬底的晶片; 在硅衬底上形成松弛的SiGe层; 在松弛的SiGe层上形成应变硅层; 在应变硅层上制造IC器件; 在所述晶片上沉积介电层以覆盖所述IC器件的栅极模块; 平滑电介质; 注入离子以形成缺陷层; 将晶片切割成单独的硅模具; 制备玻璃面板和用于接合的硅模具; 将硅模具接合到玻璃面板上以形成接合结构; 退火键合结构; 沿着缺陷层分离粘结结构; 从硅衬底去除剩余的硅层并在玻璃面板上的硅晶片上松弛SiGe层; 并完成玻璃面板电路。

47. 发明授权

US07129488B2 Surface-normal optical path structure for infrared photodetection 有权
标题翻译：用于红外光电检测的表面法线光路结构
公开(公告)号：US07129488B2
公开(公告)日：2006-10-31
申请号：US10746952
申请日：2003-12-23
申请人： Jong Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Sheng Teng Hsu
发明人： Jong Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Sheng Teng Hsu
IPC分类号： G01J5/20 , G01J5/08
CPC分类号： H01L31/105 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02532 , H01L21/02639 , H01L27/14627 , H01L27/14643 , H01L31/02327 , H01L31/028 , H01L31/035281 , H01L31/108 , H01L31/109 , H01L31/1812 , Y02E10/547
摘要： A SiGe surface-normal optical path photodetector structure and a method for forming the SiGe optical path normal structure are provided. The method comprises: forming a Si substrate with a surface; forming a Si feature, normal with respect to the Si substrate surface, such as a via, trench, or pillar; depositing SiGe overlying the Si normal feature to a thickness in the range of 5 to 1000 nanometers (nm); and, forming a SiGe optical path normal structure having an optical path length in the range of 0.1 to 10 microns. Typically, the SiGe has a Ge concentration in the range from 5 to 100%. The Ge concentration may be graded to increase with respect to the deposition thickness. For example, the SiGe may have a 20% concentration of Ge at the Si substrate interface, a 30% concentration of Ge at a SiGe film top surface, and a thickness of 400 nm.
摘要翻译：提供SiGe表面法线光路检测器结构和形成SiGe光路法线结构的方法。该方法包括：用表面形成Si衬底; 形成Si特征，相对于诸如通孔，沟槽或柱的Si衬底表面是正常的; 将Si覆盖Si正常特征的SiGe沉积到5至1000纳米（nm）范围内的厚度; 并且形成光程长度为0.1〜10微米的SiGe光路法线结构。通常，SiGe的Ge浓度为5〜100％。 Ge浓度可以相对于沉积厚度而分级增加。例如，SiGe可以在Si衬底界面处具有20％的Ge浓度，在SiGe膜顶表面上可以具有30％的Ge浓度，并且厚度为400nm。

48. 发明授权

US07037856B1 Method of fabricating a low-defect strained epitaxial germanium film on silicon 有权
标题翻译：在硅上制造低缺陷应变外延锗膜的方法
公开(公告)号：US07037856B1
公开(公告)日：2006-05-02
申请号：US11149883
申请日：2005-06-10
申请人： Jer-Shen Maa , Douglas J. Tweet , Jong-Jan Lee , Sheng Teng Hsu
发明人： Jer-Shen Maa , Douglas J. Tweet , Jong-Jan Lee , Sheng Teng Hsu
IPC分类号： H01L21/31
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/02664 , H01L21/823807
摘要： A method of fabricating a germanium film on a silicon substrate includes preparing a silicon substrate; depositing a first germanium film to form a continuous germanium film on the silicon substrate; annealing the silicon substrate and the germanium film thereon in a first annealing process to relax the germanium film; depositing a second germanium film on the first germanium film to form a germanium layer; patterning and etching the germanium layer; depositing a layer of dielectric material on the germanium layer; cyclic annealing the silicon substrate having the germanium layer and dielectric material thereon; and completing a device containing the silicon substrate and germanium layer.
摘要翻译：在硅衬底上制造锗膜的方法包括制备硅衬底; 沉积第一锗膜以在硅衬底上形成连续的锗膜; 在第一退火工艺中将硅衬底和锗膜退火以使锗膜松弛; 在第一锗膜上沉积第二锗膜以形成锗层; 图案化和蚀刻锗层; 在锗层上沉积介电材料层; 对其上具有锗层和介电材料的硅衬底进行循环退火; 并完成包含硅衬底和锗层的器件。

49. 发明授权

US06852652B1 Method of making relaxed silicon-germanium on glass via layer transfer 失效
标题翻译：通过层转移在玻璃上制备松弛的硅 - 锗的方法
公开(公告)号：US06852652B1
公开(公告)日：2005-02-08
申请号：US10674369
申请日：2003-09-29
申请人： Jer-Shen Maa , Jong-Jan Lee , Douglas J. Tweet , Steve Roy Droes
发明人： Jer-Shen Maa , Jong-Jan Lee , Douglas J. Tweet , Steve Roy Droes
IPC分类号： C23C14/48 , H01L21/00 , H01L21/02 , H01L21/20 , H01L21/336 , H01L21/762 , H01L27/12 , H01L29/786
CPC分类号： H01L21/76254 , Y10S438/933
摘要： A method of forming a silicon-germanium layer on an insulator includes preparing a silicon substrate; depositing a layer of silicon-germanium on the silicon substrate to form a silicon/silicon-germanium portion; implanting hydrogen ions in the silicon-germanium layer; preparing an insulator substrate; bonding the silicon/silicon-germanium portion to the insulator substrate with the silicon-germanium layer in contact with the insulator substrate to form a bonded entity; curing the bonded entity; and thermally annealing the bonded entity to split the bonded entity into a silicon/silicon germanium portion and a silicon-germanium-on-insulator portion and to relax the silicon germanium layers.
摘要翻译：在绝缘体上形成硅 - 锗层的方法包括制备硅衬底; 在硅衬底上沉积一层硅 - 锗以形成硅/硅 - 锗部分; 在硅 - 锗层中注入氢离子; 制备绝缘体基板; 将硅/锗锗部分接合到绝缘体衬底，硅 - 锗层与绝缘体衬底接触以形成键合实体; 养护保税实体; 以及对所述结合的实体进行热退火以将所述结合的实体分裂成硅/硅锗部分和绝缘体上的硅 - 锗部分并使所述硅锗层松弛。

50. 发明授权

US08106473B2 Germanium film optical device 有权
标题翻译：锗膜光学器件
公开(公告)号：US08106473B2
公开(公告)日：2012-01-31
申请号：US13050689
申请日：2011-03-17
申请人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
发明人： Jong-Jan Lee , Steven R. Droes , John W. Hartzell , Jer-Shen Maa
IPC分类号： H01L27/146 , H01L31/068
CPC分类号： H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14689 , H01L27/1469 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/351 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes.
摘要翻译：玻璃基板上的锗（Ge）光电二极管阵列具有相应的制造方法。提供未掺杂或轻掺杂第一掺杂剂的Ge衬底。第一掺杂剂可以是n型或p型掺杂剂。 Ge衬底的第一表面适度地掺杂有第一掺杂剂并且结合到玻璃衬底顶表面。然后，Ge衬底第二表面的第一区域被第一掺杂剂重掺杂。 Ge衬底第二表面的第二区域重掺杂有与第一掺杂剂相反的电子亲和力的第二掺杂剂，形成pn结。在Ge衬底第二表面上形成层间电介质（ILD）层，并且在覆盖Ge衬底第二表面的第一和第二区域的ILD层中蚀刻接触孔。接触孔填充有金属，并且金属垫形成在接触孔上。

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