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    • 41. 发明授权
    • Non self-aligned shallow trench isolation process with disposable space to define sub-lithographic poly space
    • 非自对准浅沟槽隔离工艺与一次性空间定义亚光刻多孔空间
    • US06664191B1
    • 2003-12-16
    • US09973131
    • 2001-10-09
    • Unsoon KimYider WuYu SunMichael K. TempletonAngela T. HuiChi Chang
    • Unsoon KimYider WuYu SunMichael K. TempletonAngela T. HuiChi Chang
    • H01L21302
    • H01L27/11526H01L21/0337H01L21/0338H01L21/76229H01L21/76838H01L27/11531Y10S438/975
    • A method is provided of forming lines with spaces between memory cells below a minimum printing dimension of a photolithographic tool set. In one aspect of the invention, lines and spaces are formed in a first polysilicon layer that forms floating gates of flash memory cells. STI regions are formed between adjacent memory cells in a substrate to isolate the cells from one another. The first polysilicon layer is deposited over the substrate covering the STI regions. The first polysilicon layer is then planarized by a CMP process or the like to eliminate overlay issues associated with the STI regions. A hard mask layer is deposited over the first polysilicon layer and a first space dimension d1 etched between adjacent memory cells. A conformal nitride layer is deposited over the hard mask layer and an etch step performed to form nitride side walls adjacent the spaces. The nitride side walls reduce the first space dimension to a second space dimension d2, so that spaces can be formed in the first polysilicon layer at a dimension smaller than the minimum printable dimension of the photolithographic tool set.
    • 提供了一种在光刻工具组的最小打印尺寸之下形成具有在存储器单元之间的空间的线的方法。 在本发明的一个方面,线和间隔形成在形成闪存单元的浮动栅极的第一多晶硅层中。 STI区域形成在衬底中的相邻存储单元之间,以隔离细胞。 第一多晶硅层沉积在覆盖STI区域的衬底上。 然后通过CMP工艺等将第一多晶硅层平坦化,以消除与STI区域相关联的覆盖问题。 在第一多晶硅层上沉积硬掩模层,并在相邻的存储单元之间蚀刻第一空间尺寸d1。 在硬掩模层上沉积共形氮化物层,并且执行蚀刻步骤以形成邻近空间的氮化物侧壁。 氮化物侧壁将第一空间尺寸减小到第二空间尺寸d2,使得可以以小于光刻工具组的最小可打印尺寸的尺寸在第一多晶硅层中形成空间。
    • 42. 发明授权
    • Method for producing a shallow trench isolation filled with thermal oxide
    • 用于生产填充有热氧化物的浅沟槽隔离体的方法
    • US06444539B1
    • 2002-09-03
    • US09784892
    • 2001-02-15
    • Yu SunAngela T. HuiYue-Song HeTatsuya KajitaMark ChangChi ChangHung-Sheng Chen
    • Yu SunAngela T. HuiYue-Song HeTatsuya KajitaMark ChangChi ChangHung-Sheng Chen
    • H01L2176
    • H01L21/7621H01L21/3085H01L21/3086H01L21/76232
    • A semiconductor apparatus and method for producing shallow trench isolation. The method includes the steps providing a semiconductor substrate member fabricated having a thin barrier oxide layer on which are fabricated a plurality of spaced apart silicon nitride pads. The regions between the spaced apart nitride pads delineate U-shaped regions for forming shallow isolation trenches and are layered with silicon oxide and polysilicon. The U-shaped regions provide a buffer region of oxide and polysilicon material adjacent opposing silicon nitride pads that prevent erosion of the nitride during etch formation of the isolation trench. The polysilicon is further etched to form a wider, second U-shaped region having sloped sidewalls that provide opposing spacer-forming buffer material that facilitates forming a V-shaped isolation trench region into the semiconductor substrate member a predetermined depth without eroding the silicon nitride pads. The V-shaped trench is subsequently filled with silicon dioxide that is grown by a hot thermal oxide process. The upper portion of the V-shaped isolation trench may be further filled with deposited silicon dioxide followed by a chemical mechanical polishing process.
    • 一种用于产生浅沟槽隔离的半导体装置和方法。 该方法包括提供制造具有薄的阻挡氧化物层的半导体衬底构件的步骤,在其上制造多个间隔开的氮化硅衬垫。 间隔开的氮化物衬垫之间的区域划定用于形成浅隔离沟槽的U形区域并且与氧化硅和多晶硅层叠。 U形区域提供邻近相对的氮化硅焊盘的氧化物和多晶硅材料的缓冲区,其在隔离沟槽的蚀刻形成期间防止氮化物的侵蚀。 多晶硅被进一步蚀刻以形成更宽的第二U形区域,其具有倾斜的侧壁,其提供相对的间隔物形成缓冲材料,其有利于在不侵蚀氮化硅焊盘的情况下在半导体衬底构件中形成预定深度的V形隔离沟槽区域 。 随后,V形沟槽填充二氧化硅,二氧化硅通过热的热氧化工艺生长。 V形隔离沟槽的上部可以进一步填充沉积的二氧化硅,随后进行化学机械抛光工艺。
    • 48. 发明授权
    • Method and apparatus for microscopy
    • 显微术的方法和装置
    • US08554344B2
    • 2013-10-08
    • US12922211
    • 2009-03-13
    • Yu SunXinyu Liu
    • Yu SunXinyu Liu
    • G05B19/18
    • G05B19/232G02B21/26G05B19/291G05B19/351G05B2219/41346G05B2219/49368
    • The present invention relates to a compact motorized rotational stage for microscopy applications and control methods for automated sample orientation/rotation. The rotational stage includes a motor, a rotational motion transmission mechanism, and a rotating sample holder for accommodating a holding device such as glass slides/Petri dishes of different sizes. Mouse embryos are used as an example to explain the control methods. A pattern recognition utility was developed for identifying mouse embryo structures. The transformation between the holding device rotational coordinate frame and the translational positioning stage coordinate frame is calibrated during image-based visual servo control. The polar body of an embryo is oriented through purely image-based visual servo control or through coordinate transformation and closed-loop position control.
    • 本发明涉及用于显微镜应用的紧凑型电动旋转台和用于自动取样/旋转的控制方法。 旋转台包括电动机,旋转运动传递机构和用于容纳诸如不同尺寸的玻璃板/培养皿的保持装置的旋转样品保持器。 以小鼠胚胎为例来说明对照方法。 开发了识别小鼠胚胎结构的模式识别实用程序。 在基于图像的视觉伺服控制期间校准保持装置旋转坐标系和平移定位台坐标系之间的变换。 胚胎的极体通过纯粹的基于图像的视觉伺服控制或通过坐标变换和闭环位置控制来定向。