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    • 41. 发明申请
    • Rotary engine
    • 旋转发动机
    • US20050193975A1
    • 2005-09-08
    • US11063656
    • 2005-02-23
    • Dong Kim
    • Dong Kim
    • F02B53/00F02B57/00
    • F01C1/46F01C21/04F01C21/0836F01C21/18
    • The present invention relates to a rotary engine in which gas supplied through a housing and a rotary shaft is guided to flow only through a suction path of the rotary shaft. The movement of the opening and closing plate is decreased with respect to one rotation of the rotary shaft. A suction opening and closing valve is designed to have an increased suction amount. A locking rod locks and unlocks the piston so that a tail part of the piston does not press a guide member based on a gas explosion in the interior of a combustion chamber. The bent portion of the path formed in the tail part of the opening and closing plate is smoothened by a gas path formed by a path support plate. The path support plate that stores gas heat decreases non-combustion gas. Pitches formed between an external surface of the rotary assembly and an inner wall of the housing due to the supply of lubricant is removed by a cooling member installed at a wall surface between an upper plate and a lower plate of the housing and a scratching seal.
    • 旋转发动机技术领域本发明涉及一种旋转式发动机,其中,通过壳体和旋转轴供给的气体被引导仅流过旋转轴的吸入路径。 相对于旋转轴的一次旋转,开闭板的移动减小。 吸入开关阀被设计成具有增加的吸入量。 锁定杆锁定并解锁活塞,使得活塞的尾部基于燃烧室内部的气体爆炸而不按压引导构件。 形成在开闭板尾部的路径的弯曲部分由路径支撑板形成的气路平滑。 储存气体热量的路径支撑板减少了非燃烧气体。 通过安装在壳体的上板和下板之间的壁表面上的冷却构件和刮擦密封件,由旋转组件的外表面和壳体的内壁之间形成的由于润滑剂的供给而形成的间距被去除。
    • 45. 发明申请
    • Method for fabricating a semiconductor device
    • 半导体器件的制造方法
    • US20050074940A1
    • 2005-04-07
    • US10954484
    • 2004-10-01
    • Sung JungDong Kim
    • Sung JungDong Kim
    • H01L21/76H01L21/265H01L21/336H01L21/8247
    • H01L27/11521H01L21/26586
    • A method for fabricating the semiconductor device includes forming linear field oxide regions on a semiconductor substrate; forming gate oxide lines on the semiconductor substrate between the field oxide regions; forming gate lines on the field oxide regions and the gate oxide lines, the gate lines being substantially perpendicular to the field oxide regions; etching the gate oxide lines and the field oxide regions between the gate lines; and forming a self-aligned source (SAS) region by injecting impurity ions into the etched regions, the impurity ion being injected in a direction at a predetermined angle other than 90° relative to the semiconductor substrate.
    • 一种制造半导体器件的方法包括在半导体衬底上形成线性场氧化物区域; 在所述场氧化物区域之间的所述半导体衬底上形成栅极氧化物线; 在场氧化物区域和栅极氧化物线上形成栅极线,栅极线基本上垂直于场氧化物区域; 蚀刻栅极线之间的栅极氧化物线和场氧化物区域; 以及通过将杂质离子注入蚀刻区域而形成自对准源(SAS)区域,杂质离子以相对于半导体衬底的90°以外的预定角度的方向注入。
    • 47. 发明申请
    • Transflective liquid crystal display device and manufacturing method thereof
    • 半透射型液晶显示装置及其制造方法
    • US20070153171A1
    • 2007-07-05
    • US11387712
    • 2006-03-24
    • Dong Kim
    • Dong Kim
    • G02F1/1335
    • G02F1/133555G02F1/136227G02F2203/02
    • A transflective liquid crystal display device includes first and second substrates facing each other, a gate line and a data line on the first substrate, the gate and data lines intersecting each other and defining a pixel region having a transmissive region and a reflective region, a thin film transistor at an intersection between the gate line and the data line, a pixel electrode in the pixel region connected to the thin film transistor, an organic insulating layer on the second substrate, the organic insulating layer including a through-hole in the transmissive region, a reflective electrode on the organic insulating layer in the reflective region, a black matrix on the second substrate, a color filter layer on the second substrate in the pixel region, and a liquid crystal layer between the first and second substrates.
    • 半透射型液晶显示装置包括彼此面对的第一和第二基板,第一基板上的栅极线和数据线,栅极和数据线彼此交叉并且限定具有透射区域和反射区域的像素区域, 栅极线与数据线之间的交点处的薄膜晶体管,连接到薄膜晶体管的像素区域中的像素电极,第二基板上的有机绝缘层,有机绝缘层包括透射的通孔 反射区域中的有机绝缘层上的反射电极,第二基板上的黑矩阵,像素区域中的第二基板上的滤色器层以及第一和第二基板之间的液晶层。