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    • 41. 发明授权
    • Method for forming an interconnect
    • 形成互连的方法
    • US6004874A
    • 1999-12-21
    • US672050
    • 1996-06-26
    • James M. Cleeves
    • James M. Cleeves
    • H01L21/768H01L23/485H01L23/522H01L21/28H01L21/31
    • H01L23/485H01L21/76885H01L21/76897H01L23/5226H01L2924/0002
    • The present invention describes a method for forming an interconnect to a region of an electronic device. The method comprises the steps of: forming a conductive material layer, wherein the conductive material layer fills an opening in a first dielectric layer and is disposed over the first dielectric layer; applying a patterning layer over the conductive material layer, wherein the patterning layer exposes a portion of the conductive material layer; etching the conductive material layer to remove the portion of the conductive material layer in order to provide an exposed conductive material structure that protrudes above the dielectric layer; forming a second dielectric layer; and planarizing the second dielectric layer to expose a portion of the exposed conductive material structure.
    • 本发明描述了一种用于形成到电子设备的区域的互连的方法。 该方法包括以下步骤:形成导电材料层,其中导电材料层填充第一电介质层中的开口并设置在第一电介质层上; 在所述导电材料层上施加图案化层,其中所述图案化层暴露所述导电材料层的一部分; 蚀刻导电材料层以去除导电材料层的部分,以便提供突出在电介质层之上的暴露的导电材料结构; 形成第二电介质层; 以及平坦化所述第二介电层以暴露所述暴露的导电材料结构的一部分。
    • 43. 发明授权
    • Interconnect methods and apparatus
    • 互连方法和装置
    • US5830797A
    • 1998-11-03
    • US673749
    • 1996-06-20
    • James M. Cleeves
    • James M. Cleeves
    • H01L21/28H01L21/60H01L21/768H01L21/336H01L21/4736
    • H01L21/76897H01L21/28123H01L21/76877H01L21/76895
    • A damascene method of forming planarized interconnects between conductive material layers in trench-isolated cells in an integrated circuit is disclosed. The method includes depositing and patterning a photoresist layer over a portion of an integrated circuit with isolated devices to expose a portion of an isolation trench separating the conductive layers of isolated devices desired to be interconnected. The method further involves etching a portion of the trench refill material, removing the photoresist layer, and depositing a second conductive layer in the trench to replace the material removed by the etching step. The invention also relates to an interconnected, optionally planarized structure that includes a substrate with an isolation trench defining a first device region and a second device region, a first conductive material in the first and second device regions and adjacent to the trench, a layer of first dielectric material in the trench and adjacent to the first conductive material, and a second conductive material in the trench and overlying the first dielectric material and adjacent to the first conductive material.
    • 公开了一种在集成电路的沟槽隔离单元中的导电材料层之间形成平坦化互连的镶嵌方法。 该方法包括在具有隔离器件的集成电路的一部分上沉积和图案化光致抗蚀剂层,以暴露分离期望互连的隔离器件的导电层的隔离沟槽的一部分。 该方法还包括蚀刻沟槽填充材料的一部分,去除光致抗蚀剂层,以及在沟槽中沉积第二导电层以替代通过蚀刻步骤除去的材料。 本发明还涉及互连的,可选择的平面化结构,其包括具有限定第一器件区域和第二器件区域的隔离沟槽的衬底,第一和第二器件区域中的并且与沟槽相邻的第一导电材料, 第一电介质材料在沟槽中并且与第一导电材料相邻,以及在沟槽中的第二导电材料,并且覆盖第一电介质材料并与第一导电材料相邻。
    • 44. 发明授权
    • Method of making an antifuse metal post structure
    • 制造反熔丝金属柱结构的方法
    • US5693556A
    • 1997-12-02
    • US581032
    • 1995-12-29
    • James M. Cleeves
    • James M. Cleeves
    • H01L21/768H01L21/70
    • H01L21/76888
    • A method of forming an antifuse device. According to the preferred method of the present invention, a first metal layer comprising a first bulk conductive layer and the top capping layer is formed. Next, the capping layer is etched into a first patterned capping layer. An antifuse layer is then formed over the patterned capping layer and over the first bulk conductive layer. Next, a second metal layer comprising a bottom barrier layer and a second bulk conductive layer is formed on the antifuse layer. The second metal layer and the antifuse layer are then etched to form a metal post on the capping layer. The first bulk conductive layer is then etched in alignment with the patterned capping layer to form a first metal interconnect.
    • 形成反熔丝装置的方法。 根据本发明的优选方法,形成包括第一体导电层和顶盖层的第一金属层。 接下来,将覆盖层蚀刻成第一图案化覆盖层。 然后在图案化的覆盖层上方和第一体导电层上形成反熔丝层。 接下来,在反熔丝层上形成包括底部阻挡层和第二体导电层的第二金属层。 然后蚀刻第二金属层和反熔丝层,以在覆盖层上形成金属柱。 然后将第一体导电层与图案化的覆盖层对准地蚀刻以形成第一金属互连。
    • 45. 发明授权
    • Planar antifuse and method of fabrication
    • 平面反熔丝及其制造方法
    • US5573971A
    • 1996-11-12
    • US580938
    • 1995-12-29
    • James M. Cleeves
    • James M. Cleeves
    • H01L21/768H01L23/525H01L21/441
    • H01L21/76888H01L23/5252H01L2924/0002
    • A method of forming an antifuse. A first conductive layer is deposited over a substrate. Next, a capping layer is deposited onto the conductive layer. An antifuse layer is then deposited onto the capping layer. A barrier layer is then deposited onto the antifuse layer. Next, the first conductive layer, the capping layer, the antifuse layer, and the barrier layer are patterned into a metal stack. A disposable post is then formed on the barrier layer of the patterned metal stack. The barrier layer and the antifuse layer are then etched substantially in alignment with the disposable post to leave a first metal interconnect. Next, an insulating layer is formed over the substrate including the first metal interconnect and the disposable post wherein the insulating layer is made substantially planar with the disposable post. The disposable post is then removed to form an aperture in the insulating layer. A second conductive layer is then deposited into the aperture and onto the barrier layer.
    • 形成反熔丝的方法。 第一导电层沉积在衬底上。 接下来,将覆盖层沉积在导电层上。 然后将反熔丝层沉积到覆盖层上。 然后将阻挡层沉积到反熔丝层上。 接下来,将第一导电层,覆盖层,反熔丝层和阻挡层图案化成金属堆叠。 然后在图案化的金属叠层的阻挡层上形成一次性柱。 然后将阻挡层和反熔丝层基本上与一次性支柱对准地蚀刻以留下第一金属互连。 接下来,在包括第一金属互连和一次性柱的基板上形成绝缘层,其中绝缘层与一次性支柱基本上成平面。 然后去除一次性柱以在绝缘层中形成孔。 然后将第二导电层沉积到孔中并到达阻挡层上。
    • 48. 发明授权
    • Control of combustion mixtures and variability thereof with engine load
    • 燃烧混合物的控制及其与发动机负荷的变化
    • US08881708B2
    • 2014-11-11
    • US13270182
    • 2011-10-10
    • James M. CleevesMichael Hawkes
    • James M. CleevesMichael Hawkes
    • F02D11/10F02M9/02
    • F02D9/12F02D11/105F02M9/02F02P5/045
    • An internal combustion engine can be operated in response to a received first throttle control input in a first operating regime that includes delivering a first air-fuel mixture having a first air/fuel ratio to a combustion volume to deliver a first output power in a first output power range between zero and a transition output power level. The engine can be operated in response to a received second throttle control input in a second operating regime that includes delivering a second air/fuel ratio richer than the first air/fuel ratio to the combustion volume to deliver a second output power in a second output power range between the transition output power level and a maximum output power level. Related methods, systems, and article of manufacture are described.
    • 可以响应于在第一操作状态下接收的第一节气门控制输入来操作内燃机,其包括将具有第一空气/燃料比的第一空气 - 燃料混合物输送到燃烧体积,以将第一输出功率输送到第一 输出功率范围在零和转换输出功率电平之间。 发动机可以在第二操作状态下响应于接收到的第二节气门控制输入而被操作,其包括将比第一空气/燃料比富含的第二空气/燃料比输送到燃烧体积以将第二输出功率输送到第二输出 过渡输出功率电平与最大输出功率电平之间的功率范围。 描述了相关的方法,系统和制造。