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41. 发明申请

US20070012939A1 Flip chip light emitting diode and method of manufacturing the same 审中-公开
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US20070012939A1
公开(公告)日：2007-01-18
申请号：US11412984
申请日：2006-04-28
申请人： Seok Hwang , Je Kim , Young Park , Kun Ko , Jee Kim , Jung Park , Bok Min
发明人： Seok Hwang , Je Kim , Young Park , Kun Ko , Jee Kim , Jung Park , Bok Min
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/08 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： The present invention relates to a flip chip light emitting diode, in which the flow of current concentrated on a portion adjacent to an n-type electrode can be induced into the center of a light emitting section and a current-spreading effect is accordingly enhanced, thereby increasing light emission efficiency of a light emitting diode chip, and a method of manufacturing the same. The method of manufacturing a flip chip light emitting diode includes sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on an optically-transparent substrate; etching predetermined regions of the active layer and p-type nitride semiconductor layer and exposing a plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of mesas; etching predetermined regions of the active layer and p-type nitride semiconductor layer positioned between the formed mesas and exposing the plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of grooves; forming an insulating layer on the surface of the groove; forming a p-type electrode across the insulating layer formed on the upper portion of the p-type nitride semiconductor layer and the surface of the groove; and forming an n-type electrode on the formed mesa.
摘要翻译：倒装芯片发光二极管技术领域本发明涉及一种倒装芯片发光二极管，其中集中在与n型电极相邻的部分上的电流可以被感应到发光部分的中心，从而相应地提高了电流扩展效果，从而提高发光二极管芯片的发光效率及其制造方法。制造倒装芯片发光二极管的方法包括在光学透明基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层; 蚀刻有源层和p型氮化物半导体层的预定区域，并露出n型氮化物半导体层的多个区域以形成多个台面; 蚀刻位于形成的台面之间的有源层和p型氮化物半导体层的预定区域，并暴露出n型氮化物半导体层的多个区域以形成多个沟槽; 在所述槽的表面上形成绝缘层; 在形成在p型氮化物半导体层的上部和沟槽的表面上的绝缘层上形成p型电极; 并在形成的台面上形成n型电极。

42. 发明申请

US20070007584A1 Nitride semiconductor light emitting diode and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20070007584A1
公开(公告)日：2007-01-11
申请号：US11480901
申请日：2006-07-06
申请人： Seok Hwang , Je Kim , Kun Ko , Bok Min
发明人： Seok Hwang , Je Kim , Kun Ko , Bok Min
IPC分类号： H01L29/792
CPC分类号： H01L33/42 , H01L27/156 , H01L33/08 , H01L33/38
摘要： The present invention relates to a GaN-based semiconductor light emitting diode and a method of manufacturing the same. The GaN-based semiconductor light emitting diode includes: a substrate; a n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent conductive layer formed on the p-type nitride semiconductor layer; an insulating layer formed on an upper center portion of the transparent conductive layer, the insulating layer having a contact hole defining a p-type contact region; a p-electrode formed on the insulating layer and electrically connected to the transparent conductive layer through the contact hole; and an n-electrode formed on the n-type nitride semiconductor layer where no active layer is formed.
摘要翻译：本发明涉及GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括：基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定部分上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明导电层; 绝缘层，形成在所述透明导电层的上中心部分上，所述绝缘层具有限定p型接触区域的接触孔; p电极，形成在所述绝缘层上，并通过所述接触孔与所述透明导电层电连接; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。

43. 发明申请

US20060115197A1 Optical module 有权
标题翻译：光模块
公开(公告)号：US20060115197A1
公开(公告)日：2006-06-01
申请号：US11148906
申请日：2005-06-09
申请人： Kwang Choi , Jong Lee , Yong Chung , Young Kang , Jong Moon , Je Kim
发明人： Kwang Choi , Jong Lee , Yong Chung , Young Kang , Jong Moon , Je Kim
IPC分类号： G02F1/035
CPC分类号： G02F1/0356
摘要： Provided is an optical module including a microstrip line, a traveling wave type optical device positioned in the end of the microstrip line, and at least one balanced open stub connected to the microstrip line for the impedance matching at a specific frequency such as 40 GHz and 60 GHz. For the fine tuning, laser trimming can be applied to the stub. A transition region is formed between the optical device and the microstrip line. A termination resistor is formed to face the microstrip line with the optical device therebetween. A bandwidth can be controlled at a specific frequency by adjusting a number of the stubs or a value of the termination resistor.
摘要翻译：提供了一种光学模块，其包括微带线，位于微带线的端部的行波型光学器件和连接到微带线的至少一个平衡的开路短路，用于在特定频率例如40GHz的阻抗匹配，以及 60 GHz。对于微调，激光修剪可以应用于存根。在光学器件和微带线之间形成过渡区域。形成终端电阻器，以便在其间具有光学器件来面对微带线。可以通过调整短路的数量或终端电阻的值来控制带宽在特定频率。

44. 发明申请

US20060091376A1 Semiconductor light-emitting device with improved light extraction efficiency 有权
公开(公告)号：US20060091376A1
公开(公告)日：2006-05-04
申请号：US11098802
申请日：2005-04-05
申请人： Sun Kim , Hyun Kim , Je Kim , In Choi , Kyu Lee , Jeong Oh
发明人： Sun Kim , Hyun Kim , Je Kim , In Choi , Kyu Lee , Jeong Oh
IPC分类号： H01L29/06
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

45. 发明申请

US20060079073A1 FABRICATION METHOD OF NITRIDE SEMICONDUCTORS AND NITRIDE SEMICONDUCTOR STRUCTURE FABRICATED THEREBY 失效
标题翻译：氮化物半导体和氮化物半导体结构的制造方法
公开(公告)号：US20060079073A1
公开(公告)日：2006-04-13
申请号：US11235278
申请日：2005-09-27
申请人： Sun Kim , In Kim , Hun Hahm , Soo Lee , Dong Kim , Je Kim
发明人： Sun Kim , In Kim , Hun Hahm , Soo Lee , Dong Kim , Je Kim
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译：公开了一种在MOCVD反应器中制造氮化物半导体的方法。首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。在氮化蓝宝石衬底上生长氮化物半导体层。通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

46. 发明申请

US20060060880A1 Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity 有权
标题翻译：氮化物半导体发光器件具有静电放电（ESD）保护能力
公开(公告)号：US20060060880A1
公开(公告)日：2006-03-23
申请号：US11053906
申请日：2005-02-10
申请人： Kyu Lee , Hyun Kim , Je Kim , Dong Kim
发明人： Kyu Lee , Hyun Kim , Je Kim , Dong Kim
IPC分类号： H01L29/22
CPC分类号： H01L27/15 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.
摘要翻译：一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层在第一个地区。在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物半导体层。

47. 发明申请

US20060003661A1 Method of forming dielectric on an upper substrate of a plasma display panel 失效
标题翻译：在等离子体显示面板的上基板上形成电介质的方法
公开(公告)号：US20060003661A1
公开(公告)日：2006-01-05
申请号：US10879526
申请日：2004-06-30
申请人： Je Kim , Woo Jang , Ju Kim
发明人： Je Kim , Woo Jang , Ju Kim
IPC分类号： H01J9/00 , H01J9/24 , H01J17/49
CPC分类号： H01J9/02 , H01J9/241
摘要： The present invention relates to a method of making a plasma display panel, and more specifically, a method of forming a dielectric layer on an upper substrate of a plasma display panel. According to first embodiment of the present invention, a method of forming a dielectric layer on an upper substrate of a plasma display panel, comprises steps of: forming a plurality of sustain electrodes on the upper substrate, and bus electrodes on the sustain electrodes; forming an electrode discoloration prevention layer which envelops said sustain electrodes and said bus electrodes, said electrode discoloration prevention layer including a green sheet by first casting; forming a penetration rate enhancement layer on the electrode discoloration prevention layer, said penetration rate enhancement layer including a green sheet by second casting.
摘要翻译：本发明涉及一种制造等离子体显示面板的方法，更具体地说，涉及一种在等离子体显示面板的上基板上形成电介质层的方法。根据本发明的第一实施例，在等离子体显示面板的上基板上形成电介质层的方法包括以下步骤：在上基板上形成多个维持电极，在维持电极上形成总线电极; 形成包围所述维持电极和所述总线电极的电极变色防止层，所述电极变色防止层通过第一次浇铸而包括生片; 在电极变色防止层上形成穿透率增强层，所述穿透率增强层通过第二次铸造包括生片。

48. 发明申请

US20050266292A1 Electrochemical cell with two types of separators 有权
标题翻译：具有两种分离器的电化学电池
公开(公告)号：US20050266292A1
公开(公告)日：2005-12-01
申请号：US11091145
申请日：2005-03-28
申请人： Je Kim , Pil Park , Soonho Ahn , Sang-Young Lee , SeokKoo Kim , Young Lee
发明人： Je Kim , Pil Park , Soonho Ahn , Sang-Young Lee , SeokKoo Kim , Young Lee
IPC分类号： H01M2/14 , H01M2/16 , H01M6/46 , H01M8/02 , H01M10/04 , H01M10/05
CPC分类号： H01M2/1653 , H01M2/1646 , H01M2/166 , H01M10/0525 , H01M10/0585 , H01M10/0587
摘要： Provided is an electrochemical device comprising two types of separators having different energy to break, wherein the outermost electrode layer of the electrode assembly includes an active material non-coated cathode, an active material non-coated anode, and a separator (second separator) disposed between the cathode and anode and having relatively low energy to break compared to that of separators (first separator) in other electrode layers. Therefore, it is possible to remarkably improve safety of the battery by inducing primary short-circuiting in the outermost electrode layer of a battery, thus facilitating heat dissipation of the battery, upon application of external impact.
摘要翻译：提供了一种电化学装置，其包括具有不同能量破裂的两种类型的隔板，其中电极组件的最外面的电极层包括未涂覆的活性材料的阴极，未涂覆的活性材料的阳极和分离器（第二隔板）在阴极和阳极之间并且与其它电极层中的隔板（第一隔板）相比具有相对低的能量断裂。因此，通过在电池的最外面的电极层中引起一次短路，可以显着地提高电池的安全性，因此，在施加外部冲击时有利于电池的散热。

49. 发明申请

US20050179027A1 Nitride based semiconductor light-emitting device 审中-公开
标题翻译：氮化物基半导体发光器件
公开(公告)号：US20050179027A1
公开(公告)日：2005-08-18
申请号：US10890215
申请日：2004-07-14
申请人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
发明人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
IPC分类号： H01L29/06 , H01L33/06 , H01L33/32
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1−AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0

50. 发明申请

US20050133812A1 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效
标题翻译：由此制造氮化物半导体的制造方法和氮化物半导体结构
公开(公告)号：US20050133812A1
公开(公告)日：2005-06-23
申请号：US10806432
申请日：2004-03-23
申请人： Sun Kim , In Kim , Hun Hahm , Soo Lee , Dong Kim , Je Kim
发明人： Sun Kim , In Kim , Hun Hahm , Soo Lee , Dong Kim , Je Kim
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L29/225
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译：公开了一种在MOCVD反应器中制造氮化物半导体的方法。首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。在氮化蓝宝石衬底上生长氮化物半导体层。通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

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