专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明专利

JP2005336118A Method for producing hydrogenated fullerene and apparatus therefor 审中-公开
标题翻译：用于生产加氢富勒烯及其装置的方法
公开(公告)号：JP2005336118A
公开(公告)日：2005-12-08
申请号：JP2004158692
申请日：2004-05-28
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI
IPC分类号： B01J3/00 , B01J19/08 , C01B3/00 , C01B31/02 , C07C5/11 , C07C13/62
CPC分类号： Y02E60/325 , Y02E60/327 , Y02E60/328
摘要： PROBLEM TO BE SOLVED: To solve the problems of a method for producing a hydrogenated fullerene by dissolving fullerene in an organic solvent and heat-treating together with a metallic catalyst in a high-pressure hydrogen atmosphere to react hydrogen with fullerene, comprising the use of a large amount of high-temperature and pressure hydrogen and an organic solvent having inflammability and harmful to human body, the safety and production cost problem caused by the use of expensive noble metal catalyst, etc.
SOLUTION: Hydrogenated fullerene is produced by reacting fullerene molecule or fullerene ion with hydrogen free radical or hydrogen ion in a plasma generated in a vacuum chamber. Since the hydrogenated fullerene is produced without using a large amount of organic solvent, hydrogen gas having high temperature and pressure, and an expensive metal catalyst, the method is effective for improving the safety and reducing the production cost of hydrogenated fullerene.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了解决通过将富勒烯溶解在有机溶剂中并与金属催化剂一起在高压氢气氛中进行热处理以使氢与富勒烯反应来制造氢化富勒烯的方法的问题，包括使用大量的高温高压氢气和对人体具有易燃性和有害的有机溶剂，使用昂贵的贵金属催化剂等引起的安全和生产成本问题。解决方案：氢化富勒烯是通过富勒烯分子或富勒烯离子与在真空室中产生的等离子体中的氢自由基或氢离子反应来制备的。由于在不使用大量有机溶剂，高温高压氢气和昂贵的金属催化剂的情况下制造氢化富勒烯，所以该方法对于提高氢化富勒烯的安全性和降低生产成本是有效的。版权所有（C）2006，JPO＆NCIPI

42. 发明专利

JP2005325198A Fluorinated fullerene-containing resin composition and molded product using the same 审中-公开
标题翻译：含氟的含烯烃树脂组合物和使用其的成型产品
公开(公告)号：JP2005325198A
公开(公告)日：2005-11-24
申请号：JP2004143394
申请日：2004-05-13
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI
IPC分类号： C01B31/02 , C08K3/16 , C08L101/00
CPC分类号： B82Y30/00
摘要： PROBLEM TO BE SOLVED: To provide a resin composition having much higher mold release properties from a matrix (e.g. a mold, a stamper or a sheet for transfer) when the resin composition is molded and much higher mold release properties and mold release durability of the molded product itself when used as the molded product (e.g. a product or a part) than those of the conventional resin compositions and good transfer properties.
SOLUTION: The resin composition comprises a fluorinated fullerene therein. The molded product using the resin composition or the molded product filled with the resin composition itself is provided.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：当树脂组合物被模制时，提供具有高于脱模性的基质（例如模具，压模或转印用片材）具有高得多的脱模性的树脂组合物，并且具有更高的脱模性和脱模性当用作成型产品（例如产品或部件）时，成型产品本身的耐久性比常规树脂组合物和耐转移性好。解决方案：树脂组合物中含有氟化富勒烯。提供了使用树脂组合物或填充有树脂组合物本身的成型体的成型体。版权所有（C）2006，JPO＆NCIPI

43. 发明专利

JP2005325015A Manufacturing method of occlusion fullerene and manufacturing device of occlusion fullerene 审中-公开
标题翻译： OF OF E E E E E E E E E E E E E E E E E E E E E E E E E E E
公开(公告)号：JP2005325015A
公开(公告)日：2005-11-24
申请号：JP2005115573
申请日：2005-04-13
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI , KUDO NOBORU
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of occlusion fullerene that overcomes the problem of low probability of the formed occulsion fullerene since only coulomb force contributes to the reaction due to the equivalence of the moving directions of the occulusion atomic ions and the fullerene ions in the conventional method comprising irradiating a plasma stream comprised of occlusion atomic ions and fullerene ions to a deposition substrate and controlling the rates of the occlusion atomic ions and the fullerene ions by the action of bias voltage applied to the deposition substrate to enhance the probability of reaction between the occlusion atomic ion and the fullerene ions.
SOLUTION: The manufacturing method comprises introducing the plasma stream consisting of the occlusion atomic ions and the plasma stream consisting of the fullerene ions into a reaction room from the opposite direction to form the occlusion fullerene. Thus, the formation efficiency of the occlusion fullerene is enhanced because not only the coulomb force acted on between ions but also the kinetic energy when ions collide contributes to the formation of the occlusion fullerene.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题的方法：提供一种闭塞富勒烯的制造方法，其克服了形成的吸入性富勒烯的概率低的问题，因为只有库仑力有助于由于与原子离子的移动方向等同的反应常规方法中的富勒烯离子包括将由闭塞原子离子和富勒烯离子组成的等离子体流照射到沉积基板上，并通过施加到沉积基板的偏置电压来控制闭塞原子离子和富勒烯离子的速率，以增强闭塞原子离子和富勒烯离子之间的反应概率。解决方案：制造方法包括将由闭塞原子离子组成的等离子体流和由富勒烯离子组成的等离子体流从相反方向引入反应室，形成闭塞富勒烯。因此，闭塞富勒烯的形成效率增强，因为不仅库仑力作用在离子之间，而且离子碰撞时的动能也有助于形成闭塞富勒烯。版权所有（C）2006，JPO＆NCIPI

44. 发明专利

JP2005272176A Method for producing inclusion carbon cluster in electrolyte solution 审中-公开
标题翻译：在电解液中生产包含碳簇的方法
公开(公告)号：JP2005272176A
公开(公告)日：2005-10-06
申请号：JP2004085125
申请日：2004-03-23
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： DAITO KOJI , KASAMA YASUHIKO , OMOTE KENJI
IPC分类号： B01D11/02 , B01F11/02 , C01B31/02 , C25C1/22
CPC分类号： B82Y30/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an inclusion cluster at a low cost in a high yield.
SOLUTION: An electrode 6 vacuum-deposited with a film 8 of C
60 fullerene which is one type of a carbon cluster is immersed in a sodium chloride solution 3 being an electrolyte solution. The sodium chloride in the solution 3 is ionized into sodium ions Na
+ and chloride ions Cl
- . When a negative voltage is applied to the electrode 6, the fullerene membrane is fed with electrons and is negatively charged. The fullerene membrane attracts and includes the sodium ions Na
+ in the solution to form sodium-atom-including fullerene. Thereafter, the fullerene membrane 8 is subjected to e.g. a chemical process to extract the sodium-atom-including fullerene from the fullerene membrane 8.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：以高产率提供以低成本生产包含簇的方法。解决方案：将作为碳簇的一种类型的富碳烯膜8真空沉积的电极6浸渍在作为电解质溶液的氯化钠溶液3中。溶液3中的氯化钠被离子化为钠离子Na + SP + +和/或氯离子。当对电极6施加负电压时，富勒烯膜被供给电子并带负电。富勒烯膜在溶液中吸引并包括钠离子Na + SP + +，以形成含钠原子的富勒烯。此后，将富勒烯膜8 从富勒烯膜8中提取含有原子的富勒烯的化学方法。版权所有（C）2006，JPO＆NCIPI

45. 发明专利

JP2005229902A Apparatus and method for producing dna-including carbon nanocapsule, and dna-including carbon nanocapsule 审中-公开
标题翻译：用于生产包含碳纳米管的DNA的装置和方法，以及包含碳纳米管的DNA
公开(公告)号：JP2005229902A
公开(公告)日：2005-09-02
申请号：JP2004042962
申请日：2004-02-19
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： HATAKEYAMA RIKIZO , KANEKO TOSHIRO , OKADA TAKESHI , KASAMA YASUHIKO , OMOTE KENJI
IPC分类号： C12N15/09 , B01J13/04 , C01B31/02
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing a DNA-including carbon nanocapsule by which the DNA can be included in the carbon nanocapsule. SOLUTION: The DNA is included by storing a DNA-containing solution 2 in a beaker 1, arranging a pair of electrodes 3 and 4 for arc discharge in the DNA-containing solution 2 in the beaker 1 so as to face to each other, and feeding a power source to the pair of the electrodes 3 and 4 for the arc discharge to give the arc discharge and to include the DNA while growing the carbon nanocapsule. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：提供一种用于制备含有碳纳米管的DNA的装置，通过该装置可以将DNA包含在碳纳米胶囊中。解决方案：通过将含DNA的溶液2储存在烧杯1中来包含DNA，在烧杯1中的含DNA溶液2中设置一对用于电弧放电的电极3和4，以便面对每个并且将电源馈送到一对用于电弧放电的电极3和4，以产生电弧放电，并且在生长碳纳米胶囊时包括DNA。版权所有（C）2005，JPO＆NCIPI

46. 发明专利

JP2005179741A Thin film deposition system, and thin film deposition method 审中-公开
标题翻译：薄膜沉积系统和薄膜沉积方法
公开(公告)号：JP2005179741A
公开(公告)日：2005-07-07
申请号：JP2003422742
申请日：2003-12-19
申请人： Ideal Star Inc , Motoyama Eng Works Ltd , 株式会社イデアルスター , 株式会社本山製作所
发明人： KASAMA YASUHIKO , OMOTE KENJI , SUGANO YOICHI
IPC分类号： C01B31/02 , C23C14/24 , C23C14/56
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/152 , C23C14/56
摘要： PROBLEM TO BE SOLVED: To solve the problem that it takes time for the evacuation and purge of a load lock chamber to deteriorate working efficiency since the exchange of deposited substrates is performed one by one through the load lock chamber connected to the main chamber for performing the deposition via a gate valve, and it takes time for the evacuation due to the release of moisture adsorbed onto the inside of the inner wall since the inner wall of a vacuum vessel made of stainless steel is subjected to surface treatment by EP (electrolytic polishing) treatment in a single sheet processing film deposition system for depositing a thin film such as a capsule fullerene in the vacuum vessel. SOLUTION: The thin film deposition system is constituted so that a planar supporting member capable of being mounted with a plurality of deposition substrates is fitted so as to be movable orthogonally to the axial direction of the main chamber. In this way, the exchange of the deposition substrates is made possible by the movement of the supporting member, and the load lock chamber is made needless, thus the time required for evacuation and purge can be shortened to improve working efficiency. Further, the inner wall of the main chamber is surface-treated by CRP (Cr 2 O 3 passivation) treatment, thus, regarding the CRP-treated stainless steel, moisture and gas are not infiltrated to the inside. In this way, the time for evacuation can be further shortened. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了解决由于沉积的基板的更换而通过连接到主体的负载锁定室一个接一个地执行用于疏散和清除负载锁定室以降低工作效率所需的时间的问题用于通过闸阀进行沉积的腔室，并且由于吸附在内壁内部的水分的释放而需要时间，因为由不锈钢制成的真空容器的内壁经受EP的表面处理（电解抛光）处理，用于在真空容器中沉积诸如胶囊富勒烯的薄膜的单片处理膜沉积系统。解决方案：薄膜沉积系统被构造成使得能够安装有多个沉积基板的平面支撑构件被装配成能够与主室的轴向正交地移动。以这种方式，通过支撑构件的移动使得沉积基板的更换成为可能，并且使负载锁定室变得不必要，因此可以缩短排气和吹扫所需的时间，以提高工作效率。此外，通过CRP（Cr 2 3 钝化）处理主室的内壁进行表面处理，因此，关于CRP处理的不锈钢，水分和气体不会渗透到内部。这样，撤离的时间可以进一步缩短。版权所有（C）2005，JPO＆NCIPI

47. 发明专利

JP2005097006A Encapsulating fullerene production apparatus and method 审中-公开
标题翻译：包装丰富的生产设备和方法
公开(公告)号：JP2005097006A
公开(公告)日：2005-04-14
申请号：JP2003327939
申请日：2003-09-19
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI
IPC分类号： C01B31/02
CPC分类号： B82Y30/00
摘要： PROBLEM TO BE SOLVED: To solve the problem wherein although in a conventional encapsulating fullerene production apparatus, the densities of alkali metal ions and of fullerene ions being raw materials for an encapsulating fullerene are measured by measuring the density of electrons in a plasma with a plasma probe placed between a fullerene inlet part and an encapsulating fullerene deposition substrate, this method can not separately measure the density of alkali metal ions and the density of fullerene ions but can not provide information on judgement whether or not the film formation of an encapsulating fullerene is possible, whether or not the raw materials are replenished or, whether or not the apparatus is inspected.
SOLUTION: A first plasma probe is placed between an alkali metal plasma generation part and a fullerene inlet part, and a second plasma probe is placed between the fullerene inlet part and an encapsulating fullerene deposition substrate. The measurement of the densities of electrons in a plasma with the respective probes permits the separate measurement of the density of alkali metal ions and the density of fullerene ions.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了解决以往的封装富勒烯生产装置中的碱金属离子和富勒烯离子的浓度作为密封富勒烯的原料的浓度，通过测定等离子体中的电子密度来测定将等离子体探针放置在富勒烯入口部分和封装富勒烯沉积基板之间，该方法不能分别测量碱金属离子的密度和富勒烯离子的密度，但不能提供判断是否形成封装富勒烯是否可能，不管原材料是否补充，或者是否检查设备。解决方案：将第一等离子体探针放置在碱金属等离子体产生部分和富勒烯入口部分之间，并且将第二等离子体探针置于富勒烯入口部分和封装富勒烯沉积基板之间。利用各个探针对等离子体中的电子密度的测量允许单独测量碱金属离子的密度和富勒烯离子的密度。版权所有（C）2005，JPO＆NCIPI

48. 发明专利

JP2013055125A Method of manufacturing hole block layer, hole block layer, photoelectric conversion element, photoelectric conversion device, organic thin-film solar cell panel, and light-emitting device 有权
标题翻译：制造孔块层，孔板层，光电转换元件，光电转换装置，有机薄膜太阳能电池板和发光装置的方法
公开(公告)号：JP2013055125A
公开(公告)日：2013-03-21
申请号：JP2011190743
申请日：2011-09-01
申请人： Ideal Star Inc , 株式会社イデアルスター , Kanazawa Univ , 国立大学法人金沢大学
发明人： KUWABARA TAKAYUKI , SAIDA MORIHIKO , OMOTE KENJI , TAKAHASHI MITSUNOBU
IPC分类号： H01L51/42 , H01L51/50 , H05B33/10
CPC分类号： H01L51/44 , B82Y10/00 , H01L51/0007 , H01L51/0036 , H01L51/0047 , H01L51/4253 , H01L51/4273 , H01L51/5096 , Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a hole block layer which is applicable even if a base material contains resin based material, while being excellent in basic characteristic such as high photoelectric conversion efficiency.SOLUTION: The method of manufacturing a hole block layer includes: a liquid layer formation step in which a liquid composition containing zinc source which contains bis (acetylacetonate) zinc, complexing agent which contains acetylacetone, and polar solvent is caused to contact a surface of a member which is to form a hole block layer, so that a liquid layer made from liquid composition is formed on the surface of the member which is to form the hole block layer; and a drying step in which the liquid layer formed in the liquid layer formation step is heated so that the complexing agent and the polar solvent are evaporated from the liquid layer, thereby forming a hole block layer containing zinc oxide on the surface of the member which is to form the hole block layer.
摘要翻译：要解决的问题：提供即使基材含有树脂基材料也可应用的空穴阻挡层的制造方法，同时基板特性如光电转换效率高。解决方案：制造空穴阻挡层的方法包括：液层形成步骤，其中含有含有双（乙酰丙酮）锌的锌源，含有乙酰丙酮的络合剂和极性溶剂的液体组合物与要形成空穴阻挡层的构件的表面，从而在要形成空穴阻挡层的构件的表面上形成由液体组合物制成的液体层; 以及干燥步骤，其中在液体层形成步骤中形成的液体层被加热使得络合剂和极性溶剂从液体层蒸发，从而在该部件的表面上形成含有氧化锌的空穴阻挡层，是形成空穴阻挡层。版权所有（C）2013，JPO＆INPIT

49. 发明专利

JP2011254099A Linear element 有权
标题翻译：线性元素
公开(公告)号：JP2011254099A
公开(公告)日：2011-12-15
申请号：JP2011177642
申请日：2011-08-15
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI
IPC分类号： H01L29/786 , H01L21/336 , H01L27/28 , H01L29/06 , H01L29/417 , H01L29/423 , H01L51/05
CPC分类号： H01L29/78696 , H01L29/0657 , H01L29/41733 , H01L29/42384
摘要： PROBLEM TO BE SOLVED: To solve problems with respect to refinement of a channel length and improvement of reproducibility of the channel length that defines electric characteristics of a linear MISFET and is defined by a distance between a source region and a drain region along a cylindrical gate insulation region, while the MISFET is flexible, resilient and applicable to an integrated circuit with an arbitrary shape as its features and employs a structure in which the source region and the drain region are arranged in parallel.SOLUTION: An MISFET employs a structure in which a source region and a drain region interpose a semiconductor region as a channel region. It is configured to apply a control voltage via a gate insulation region to the semiconductor region to control a current flowing between the source region and the drain region. Thereby, since a channel length is defined by a film thickness of the semiconductor region, this enables to refine the channel length and to improve reproducibility.
摘要翻译：要解决的问题：为了解决关于通道长度的细化和提高定义线性MISFET的电特性的通道长度的再现性的问题，并且由源极区域和漏极区域之间的距离限定圆柱形栅极绝缘区域，而MISFET是柔性的，弹性的并且适用于具有任意形状的集成电路作为其特征，并且采用其中源极区域和漏极区域平行布置的结构。解决方案：MISFET采用其中源极区域和漏极区域将半导体区域作为沟道区域的结构。其被配置为通过栅极绝缘区域向半导体区域施加控制电压以控制在源极区域和漏极区域之间流动的电流。因此，由于沟道长度由半导体区域的膜厚限定，所以能够改善沟道长度并提高再现性。版权所有（C）2012，JPO＆INPIT

50. 发明专利

JP2011071130A Light emitting element, and light emitting device 审中-公开
标题翻译：发光元件和发光装置
公开(公告)号：JP2011071130A
公开(公告)日：2011-04-07
申请号：JP2010265276
申请日：2010-11-29
申请人： Ideal Star Inc , 株式会社イデアルスター
发明人： KASAMA YASUHIKO , OMOTE KENJI
IPC分类号： H05B33/26 , C09K11/06 , H01L51/50 , H01L51/52 , H05B33/12 , H05B33/14 , H05B33/22
CPC分类号： C09K11/06 , H01L51/52 , H01L51/5203 , H05B33/14 , H05B33/22 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To enlarge a light emitting device and improve a production yield by enabling production of the device by selecting only linear light emitting elements of good quality.
SOLUTION: In this light emitting element composed of: a substrate 1001; a gate electrode layer 1002 disposed on the substrate; a gate insulating layer 1003 disposed on the gate substrate; a first electrode 1006 disposed on the gate insulating layer; a light emitting film 1004 disposed on the gate insulating layer and the first electrode; and a second electrode 1007 disposed on the light emitting film, the second electrode is disposed diagonally to the upper part of the first electrode, or is disposed laterally apart from the first electrode.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过仅选择质量好的线性发光元件，能够实现器件的制造，来扩大发光器件并提高生产率。解决方案：在该发光元件中，包括：基板1001; 设置在基板上的栅电极层1002; 设置在栅极基板上的栅极绝缘层1003; 设置在栅极绝缘层上的第一电极1006; 布置在栅极绝缘层和第一电极上的发光膜1004; 以及设置在发光膜上的第二电极1007，第二电极与第一电极的上部对角设置，或者与第一电极横向设置。版权所有（C）2011，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式