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41. 发明授权

US06169012A Chemical mechanical polishing for forming a shallow trench isolation structure 失效
标题翻译：用于形成浅沟槽隔离结构的化学机械抛光
公开(公告)号：US06169012A
公开(公告)日：2001-01-02
申请号：US09111007
申请日：1998-07-07
申请人： Coming Chen , Juan-Yuan Wu , Water Lur
发明人： Coming Chen , Juan-Yuan Wu , Water Lur
IPC分类号： H01L2176
CPC分类号： H01L21/31144 , H01L21/31053 , H01L21/31056 , H01L21/76229 , Y10S438/942
摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relative large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed. A number of shallow trenches are formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial rever active mask has an opening at a central part of each relative large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed. The oxide layer is planarized to expose the silicon nitride layer.
摘要翻译：公开了用于形成浅沟槽隔离的化学机械抛光的方法。提供了具有多个有源区的衬底，包括多个相对较大的有源区和多个相对小的有源区。该方法包括以下步骤。首先形成衬底上的氮化硅层。在活性区域之间形成多个浅沟槽。在衬底上形成氧化物层，使得浅沟槽被氧化物层填充。在氧化物层上形成部分反向有源掩模。部分反射器主动掩模在每个相对较大的有效区域的中心部分具有开口。开口暴露氧化物层的一部分。开口至少有一个虚拟图案。去除每个大的有源区的中心部分的氧化物层，以露出氮化硅层。去除部分反向主动掩模。将氧化物层平坦化以暴露氮化硅层。

42. 发明授权

US06156642A Method of fabricating a dual damascene structure in an integrated circuit 有权
标题翻译：在集成电路中制造双镶嵌结构的方法
公开(公告)号：US06156642A
公开(公告)日：2000-12-05
申请号：US274603
申请日：1999-03-23
申请人： Juan-Yuan Wu , Water Lur
发明人： Juan-Yuan Wu , Water Lur
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76838 , H01L21/76834
摘要： A semiconductor fabrication method is provided for fabricating a dual damascene structure in a semiconductor device. By this method, a dielectric layer is first formed over a semiconductor substrate, and then a void structure including a via hole and a trench is formed in the dielectric layer. Next, a metallization structure is formed in the void structure in the dielectric layer, and after this, a special etching agent is used to treat the exposed surface of the metallization structure so as to make the exposed surface substantially rugged. Finally, a passivation layer is formed over the metallization structure, with the metallization structure serving as the intended dual damascene structure. The roughness of the exposed surface of the metallization structure can help buffer the stresses from the deposition of the passivation layer thereon and also help strengthen the adhesion between the passivation layer and the metallization structure, so that the passivation layer can be firmly secured to the metallization structure. As a result, the passivation layer cannot peel off the metallization structure, and thereby can more reliably help prevent the metallization structure from oxidizing and the atoms/ions in the metallization structure from diffusing into the subsequently formed dielectric layer above the metallization structure. The resultant IC device is therefore more reliable to use.
摘要翻译：提供半导体制造方法用于在半导体器件中制造双镶嵌结构。通过这种方法，首先在半导体衬底上形成电介质层，然后在电介质层中形成包括通孔和沟槽的空隙结构。接下来，在电介质层的空隙结构中形成金属化结构，之后，使用特殊的蚀刻剂来处理金属化结构的露出表面，以使暴露表面基本上坚固。最后，在金属化结构上形成钝化层，金属化结构用作预期的双镶嵌结构。金属化结构的暴露表面的粗糙度可以帮助缓冲其上的钝化层沉积的应力，并且还有助于加强钝化层和金属化结构之间的粘附，使得钝化层可以牢固地固定到金属化结构体。结果，钝化层不能剥离金属化结构，从而更可靠地有助于防止金属化结构氧化，并且金属化结构中的原子/离子扩散到金属化结构之上的随后形成的电介质层。因此，所得到的IC器件更可靠地使用。

43. 发明授权

US6155912A Cleaning solution for cleaning a polishing pad used in a chemical-mechanical polishing process 有权
标题翻译：用于清洁化学机械抛光工艺中使用的抛光垫的清洁溶液
公开(公告)号：US6155912A
公开(公告)日：2000-12-05
申请号：US399089
申请日：1999-09-20
申请人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
发明人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
IPC分类号： C11D3/39 , C11D7/06 , C11D7/20 , C11D11/00 , B24B1/00
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/06 , C11D7/20
摘要： The present invention provides a cleaning solution for cleaning a polishing pad used in a chemical-mechanical polishing (CMP) process for polishing the surface of a semiconductor wafer. The cleaning solution comprises a potassium hydroxide (KOH) solution for cleaning off slurry remaining on the surface of the polishing pad, and a hydrogen peroxide (H.sub.2 O.sub.2) solution and ammonia water (NH.sub.4 OH) solution for removing abrasive debris remaining on the surface of the polishing pad after the chemical-mechanical polishing process.
摘要翻译：本发明提供一种用于清洗用于抛光半导体晶片的表面的化学机械抛光（CMP）工艺中使用的抛光垫的清洗溶液。清洁溶液包括用于清除残留在抛光垫表面上的浆料的氢氧化钾（KOH）溶液和用于除去残留在抛光表面上的磨料残渣的过氧化氢（H 2 O 2）溶液和氨水（NH 4 OH）溶液化学机械抛光后的垫。

44. 发明授权

US6097093A Structure of a dual damascene 失效
标题翻译：双镶嵌结构
公开(公告)号：US6097093A
公开(公告)日：2000-08-01
申请号：US165703
申请日：1998-10-02
申请人： Juan-Yuan Wu , Water Lur
发明人： Juan-Yuan Wu , Water Lur
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/528 , H01L29/78 , H01L23/535
CPC分类号： H01L23/5222 , H01L23/5283 , H01L2924/0002
摘要： A dual damascene structure includes a semiconductor substrate, a metal-oxide-semiconductor (MOS) transistor formed on the substrate and a metal layer. The metal layer is electrically connected to the conducting regions of the MOS transistor through interconnect. The metal layer further includes first metal spacing regions and second metal spacing regions, wherein the width of a first metal spacing region is about 1 to 10 times of the linewidth of the device, and the width of a second spacing region is about 0.8 to 1.2 times of the linewidth of the device. The first metal spacing regions includes a high-permittivity dielectric for a better thermal transferring rate, and the second spacing regions includes a low-permittivity dielectric for a shorter resistance-capacitance delay.
摘要翻译：双镶嵌结构包括半导体衬底，形成在衬底上的金属氧化物半导体（MOS）晶体管和金属层。金属层通过互连电连接到MOS晶体管的导电区域。金属层还包括第一金属间隔区域和第二金属间隔区域，其中第一金属间隔区域的宽度为器件线宽的约1至10倍，第二间隔区域的宽度为约0.8至1.2 设备线宽的倍数。第一金属间隔区域包括用于更好的热传递速率的高介电常数电介质，并且第二间隔区域包括用于较短电阻 - 电容延迟的低介电常数介电层。

45. 发明授权

US6062964A Chemical mechanical polishing apparatus for controlling slurry distribution 有权
标题翻译：化学机械抛光装置，用于控制浆料分布
公开(公告)号：US6062964A
公开(公告)日：2000-05-16
申请号：US393909
申请日：1999-09-10
申请人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
发明人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
IPC分类号： B24B37/11 , B24B57/02 , B24B57/00
CPC分类号： B24B37/11 , B24B57/02
摘要： A chemical mechanical polishing apparatus for controlling slurry distribution is disclosed. The slurry flowing through the mesh before transferring to the polishing pad, the mesh being used to distribute the slurry onto surface of the polishing pad. There are different netting densities over the mesh, achieving the purpose of controlling slurry distribution.
摘要翻译：公开了一种用于控制浆料分布的化学机械抛光装置。在转移到抛光垫之前，浆料流过网状物，该网用于将浆料分配到抛光垫的表面上。在网上有不同的网状密度，达到控制浆料分布的目的。

46. 发明授权

US6036356A In-situ slurry mixing apparatus 失效
标题翻译：原位浆料混合装置
公开(公告)号：US6036356A
公开(公告)日：2000-03-14
申请号：US220147
申请日：1998-12-23
申请人： Ming-Sheng Yang , Chien-Hsin Lai , Chia-Jui Chang , Juan-Yuan Wu
发明人： Ming-Sheng Yang , Chien-Hsin Lai , Chia-Jui Chang , Juan-Yuan Wu
IPC分类号： B01F5/06 , B24B37/04 , B24B57/02 , H01L21/306 , B01F5/00
CPC分类号： B24B37/04 , B01F5/061 , B01F5/0646 , B24B57/02 , H01L21/30625
摘要： An in-situ CMP slurry mixing apparatus. The apparatus comprises a tubular main body and a plurality of tapered plugs. The tubular main body further comprises a plurality of first tubes with a first diameter, a plurality of second tubes with a second diameter. Each tapered plug is placed in each second tube, the tips of each tapered plug are pointed in the same direction, and the tips are each oriented opposite to a flowing direction of a CMP slurry. In addition, the second diameter is larger than the first diameter, and a diameter of the base of each tapered plug is larger than the first diameter but is smaller than the second diameter.
摘要翻译：原位CMP浆料混合装置。该装置包括管状主体和多个锥形塞。管状主体还包括具有第一直径的多个第一管，具有第二直径的多个第二管。每个锥形塞被放置在每个第二管中，每个锥形塞的尖端指向相同的方向，并且尖端各自定向成与CMP浆料的流动方向相反。此外，第二直径大于第一直径，并且每个锥形塞的基部的直径大于第一直径但小于第二直径。

47. 发明授权

US07078346B2 High density plasma chemical vapor deposition process 有权
公开(公告)号：US07078346B2
公开(公告)日：2006-07-18
申请号：US10902315
申请日：2004-07-29
申请人： Chih-Chien Liu , Ta-Shan Tseng , Wen-Bin Shieh , Juan-Yuan Wu , Water Lur , Shih-Wei Sun
发明人： Chih-Chien Liu , Ta-Shan Tseng , Wen-Bin Shieh , Juan-Yuan Wu , Water Lur , Shih-Wei Sun
IPC分类号： H01L21/311
CPC分类号： H01L21/02112 , H01L21/02164 , H01L21/02274 , H01L21/0276 , H01L21/31612 , H01L21/32136 , H01L21/32139 , H01L21/76834 , H01L21/76837 , H01L21/76838
摘要： A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

48. 发明授权

US07001713B2 Method of forming partial reverse active mask 有权
公开(公告)号：US07001713B2
公开(公告)日：2006-02-21
申请号：US09991466
申请日：2001-11-21
申请人： Coming Chen , Juan-Yuan Wu , Water Lur
发明人： Coming Chen , Juan-Yuan Wu , Water Lur
IPC分类号： G03F7/00 , G03F7/36
CPC分类号： H01L21/76229 , H01L21/31053
摘要： A method of forming a partial reverse active mask. A mask pattern comprising a large active region pattern with an original dimension and a small active region pattern is provided. The large active region pattern and the small active region pattern are shrunk until the small active region pattern disappears. The large active region pattern enlarged to a dimension slightly smaller than the original dimension.

49. 发明申请

US20050032328A1 Chemical mechanical polishing in forming semiconductor device 有权
标题翻译：化学机械抛光成型半导体器件
公开(公告)号：US20050032328A1
公开(公告)日：2005-02-10
申请号：US10939716
申请日：2004-09-13
申请人： Ming-Sheng Yang , Juan-Yuan Wu , Water Lur
发明人： Ming-Sheng Yang , Juan-Yuan Wu , Water Lur
IPC分类号： H01L21/762 , H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76229
摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relatively large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is formed. A number of shallow trenches are formed between the active regions one or more of which may constitute an alignment mark. An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial reverse active mask exposes a portion of the oxide layer over the large active area and over the alignment mark. The oxide layer of each large active region and the alignment mark is removed. The partial reverse active mask is removed. The oxide layer is planarized.
摘要翻译：公开了用于形成浅沟槽隔离的化学机械抛光的方法。提供了具有多个有效区域的基板，包括多个相对较大的有源区域和多个相对小的有源区域。该方法包括以下步骤。形成衬底上的氮化硅层。在有源区域之间形成多个浅沟槽，其中一个或多个可以构成对准标记。在衬底上形成氧化物层，使得浅沟槽被氧化物层填充。在氧化物层上形成部分反向有源掩模。部分反向有源掩模将氧化物层的一部分暴露在大的有效区域上方和对准标记之上。去除每个大活性区域的氧化物层和对准标记。去除部分反向主动掩模。氧化层平坦化。

50. 发明授权

US06838357B2 Chemical mechanical polishing for forming a shallow trench isolation structure 有权
标题翻译：用于形成浅沟槽隔离结构的化学机械抛光
公开(公告)号：US06838357B2
公开(公告)日：2005-01-04
申请号：US10304523
申请日：2002-11-26
申请人： Coming Chen , Juan-Yuan Wu , Water Lur
发明人： Coming Chen , Juan-Yuan Wu , Water Lur
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/31144 , H01L21/31053 , H01L21/31056 , H01L21/76229 , Y10S438/942
摘要： A method of chemical-mechanical polishing for forming a shallow trench isolation is disclosed. A substrate having a number of active regions, including a number of relative large active regions and a number of relative small active regions, is provided. The method comprises the following steps. A silicon nitride layer on the substrate is first formed A number of shallow trenches are formed between the active regions An oxide layer is formed over the substrate, so that the shallow trenches are filled with the oxide layer. A partial reverse active mask is formed on the oxide layer. The partial rever active mask has an opening at a central part of each relative large active region. The opening exposes a portion of the oxide layer. The opening has at least a dummy pattern. The oxide layer on the central part of each large active region is removed to expose the silicon nitride layer. The partial reverse active mask is removed The oxide layer is planarized to expose the silicon nitride layer.

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