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41. 发明申请

US20120313084A1 METAL OXIDE SEMICONDUCTOR TRANSISTOR 有权
标题翻译：金属氧化物半导体晶体管
公开(公告)号：US20120313084A1
公开(公告)日：2012-12-13
申请号：US13480742
申请日：2012-05-25
申请人： CHUANG-CHUANG TSAI , Hsiao-Wen Zan , Hsin-Fei Meng , Chun-Cheng Yeh
发明人： CHUANG-CHUANG TSAI , Hsiao-Wen Zan , Hsin-Fei Meng , Chun-Cheng Yeh
IPC分类号： H01L29/22 , H01L51/30
CPC分类号： H01L29/78696 , H01L29/78606 , H01L29/78693
摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
摘要翻译：金属氧化物半导体晶体管包括栅极，金属氧化物有源层，栅极绝缘层，源极和漏极。金属氧化物活性层具有第一表面和第二表面，并且第一表面面向栅极。栅极绝缘层设置在栅极和金属氧化物有源层之间。源极和漏极分别连接到金属氧化物活性层。第二表面限定了源极和漏极之间的迁移率增强区域。迁移率增强区域中的金属氧化物活性层的氧含量小于迁移率增强区域外的区域中的金属氧化物活性层的氧含量。金属氧化物半导体晶体管具有高载流子迁移率。

42. 发明申请

US20110284949A1 VERTICAL TRANSISTOR AND A METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：垂直晶体管及其制造方法
公开(公告)号：US20110284949A1
公开(公告)日：2011-11-24
申请号：US12786343
申请日：2010-05-24
申请人： Hsin-Fei Meng , Hsiao-Wen Zan , Yu-Chiang Chao
发明人： Hsin-Fei Meng , Hsiao-Wen Zan , Yu-Chiang Chao
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L51/057 , H01L51/0023
摘要： A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode exposed from the first insulation layer and having a thickness greater than 50 nm and no more than 300 nm, a grid electrode formed on the first insulation layer, a semiconductor layer formed on the first electrode, and a second electrode formed on the semiconductor layer.
摘要翻译：提供垂直晶体管和制造垂直晶体管的方法。垂直晶体管具有基板，形成在基板上的第一电极，形成在第一电极上的第一绝缘层，第一电极的一部分从第一绝缘层露出并具有大于50nm且不大于 300nm，形成在第一绝缘层上的栅电极，形成在第一电极上的半导体层和形成在半导体层上的第二电极。

43. 发明授权

US07968875B2 Organic photosensitive optoelectronic device 有权
标题翻译：有机光敏光电器件
公开(公告)号：US07968875B2
公开(公告)日：2011-06-28
申请号：US12500830
申请日：2009-07-10
申请人： Hsin-Fei Meng , Sheng-Fu Hong , Hsin-Rong Tseng , En-Chen Chen , Chia-Hung Chu
发明人： Hsin-Fei Meng , Sheng-Fu Hong , Hsin-Rong Tseng , En-Chen Chen , Chia-Hung Chu
IPC分类号： H01L51/42
CPC分类号： H01L51/4246 , B82Y10/00 , H01L51/0036 , H01L51/0037 , H01L51/0047 , H01L51/4253 , Y02E10/549
摘要： An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector.
摘要翻译：有机光敏光电子器件包括阳极，形成在阳极上的有机感光层，具有供体部分和受体部分，形成在有机感光层上的空穴阻挡层，以使有机感光层夹在阳极之间和空穴阻挡层，以及形成在空穴阻挡层上以使空穴阻挡层夹在阴极和有机感光层之间的阴极。空穴阻挡层的最高占据分子轨道（HOMO）比施主部分高至少0.3eV。因此，光电子器件有效地抑制暗电流，以便在施加到检测器时提高灵敏度。

44. 发明申请

US20080142079A1 Photovoltaic cell 审中-公开
标题翻译：光伏电池
公开(公告)号：US20080142079A1
公开(公告)日：2008-06-19
申请号：US11730856
申请日：2007-04-04
申请人： Ching Ting , Hsin-Fei Meng , Yi-Chun Chen , Jeng-Liang Han , Bao-Tsan Ko , Ching-Yen Wei
发明人： Ching Ting , Hsin-Fei Meng , Yi-Chun Chen , Jeng-Liang Han , Bao-Tsan Ko , Ching-Yen Wei
IPC分类号： H01L31/00
CPC分类号： H01L51/4246 , C08G2261/3223 , C08G2261/91 , H01L51/0036 , H01L51/0037 , H01L51/4253 , H01L2251/308 , Y02E10/549
摘要： The invention discloses a photovoltaic cell with a high photocurrent. The photovoltaic cell comprises a first electrode, a second electrode, a photoactive layer between the first and second electrodes, and a polar organic layer between the photoactive layer and at least one of the first and second electrodes.
摘要翻译：本发明公开了一种具有高光电流的光伏电池。光伏电池包括第一电极，第二电极，第一和第二电极之间的光活性层，以及光活性层与第一和第二电极中的至少一个之间的极性有机层。

45. 发明授权

US08723503B2 Vertical type sensor 有权
标题翻译：立式传感器
公开(公告)号：US08723503B2
公开(公告)日：2014-05-13
申请号：US13009440
申请日：2011-01-19
申请人： Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
IPC分类号： H01L29/08 , H01L21/00 , G01N33/543 , H01L51/52 , H01L51/05 , G01N27/414
CPC分类号： G01N27/3278 , G01N27/414 , G01N33/54373 , G01N33/5438 , H01L51/057 , H01L51/5203
摘要： The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
摘要翻译：本发明提供一种垂直型传感器，包括基板; 形成在所述基板上的第一电极; 感测层，其形成在所述第一电极层上并且与目标物质反应，其中所述第一电极层介于所述基板和所述感测层之间; 以及形成在所述感测层上并且具有多个开口的第二电极层，其中所述感测层插入在所述第一电极层和所述第二电极层之间，并且所述目标物质经由所述多个开口接触所述感测层。本发明的垂直型传感器提供即时，灵敏和快速的检测。

46. 发明申请

US20220384737A1 HIGH CURRENT OTFT DEVICES WITH VERTICAL DESIGNED STRUCTURE AND DONOR-ACCEPTOR BASED ORGANIC SEMICONDUCTOR MATERIALS 有权
公开(公告)号：US20220384737A1
公开(公告)日：2022-12-01
申请号：US17873240
申请日：2022-07-26
申请人： Mingqian He , Robert George Manley , Karan Mehrotra , Hsin-Fei Meng , Hsiao-Wen Zan
发明人： Mingqian He , Robert George Manley , Karan Mehrotra , Hsin-Fei Meng , Hsiao-Wen Zan
IPC分类号： H01L51/00
摘要： Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

47. 发明授权

US08723165B2 Vertical electro-optical component and method of fabricating the same 有权
标题翻译：垂直电光元件及其制造方法
公开(公告)号：US08723165B2
公开(公告)日：2014-05-13
申请号：US13111205
申请日：2011-05-19
申请人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Wu-Wei Tsai , Yu-Chiang Chao
IPC分类号： H01L51/52 , H01L51/56 , H01L51/44
CPC分类号： H01L51/442 , H01L51/057 , H01L51/4253 , H01L51/5215 , H01L51/5234 , H01L51/5296 , Y02E10/549
摘要： A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.
摘要翻译：提供了一种垂直电光部件及其形成方法。垂直电光部件包括基板，形成在基板上的第一电极层，形成在第一电极层上的图案化绝缘层，形成在图案化绝缘层上的金属层，形成在第一电极层上的半导体层，以及形成在所述半导体层上的第二电极层，其中所述半导体层封装所述图案化绝缘层和所述金属层。因此，垂直电光部件具有垂直晶体管的低操作电压和光电二极管的高反应速度，并且可以用于形成发光晶体管。

48. 发明申请

US20120086431A1 VERTICAL TYPE SENSOR 有权
标题翻译：垂直式传感器
公开(公告)号：US20120086431A1
公开(公告)日：2012-04-12
申请号：US13009440
申请日：2011-01-19
申请人： Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
发明人： Hsiao-Wen Zan , Hsin-Fei Meng , Ming-Zhi Dai , Yu-Chiang Chao
IPC分类号： G01R19/00 , H01L21/02 , H01L29/66
CPC分类号： G01N27/3278 , G01N27/414 , G01N33/54373 , G01N33/5438 , H01L51/057 , H01L51/5203
摘要： The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.
摘要翻译：本发明提供了一种垂直型传感器，包括基板; 形成在所述基板上的第一电极; 感测层，其形成在所述第一电极层上并且与目标物质反应，其中所述第一电极层介于所述基板和所述感测层之间; 以及形成在所述感测层上并且具有多个开口的第二电极层，其中所述感测层插入在所述第一电极层和所述第二电极层之间，并且所述目标物质经由所述多个开口接触所述感测层。本发明的垂直型传感器提供即时，灵敏和快速的检测。

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