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    • 45. 发明授权
    • Semiconductor substrate and process for producing it
    • 半导体衬底及其制造方法
    • US07491966B2
    • 2009-02-17
    • US11157260
    • 2005-06-21
    • Dirk DantzAndreas HuberReinhold WahlichBrian Murphy
    • Dirk DantzAndreas HuberReinhold WahlichBrian Murphy
    • H01L29/06
    • H01L21/187H01L21/3065H01L21/324H01L21/76251
    • A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.
    • 一种制造半导体衬底的方法,包括载体晶片和单晶半导体材料层:a)在单晶半导体材料的施主晶片的表面上产生包含凹陷的层,b)将所述供体的表面 晶片容纳凹槽到载体晶片,c)热处理以封闭载体晶片和施主晶片之间的界面处的凹槽,以在施主晶片内形成一层空腔,以及d)沿着该空腔层分裂施主晶片 ,从而在载体晶片上产生一层半导体材料。 因此制备的半导体衬底可以具有厚度为100nm以下,层厚均匀度为5%以下,HF缺陷密度为0.02 / cm 2以下的单晶半导体层。