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41. 发明授权

US07250104B2 Method and system for optically enhanced metal planarization 有权
标题翻译：用于光学增强金属平面化的方法和系统
公开(公告)号：US07250104B2
公开(公告)日：2007-07-31
申请号：US10637731
申请日：2003-08-08
申请人： Cyprian E. Uzoh , Homayoun Talieh , Bulent M. Basol , Halit N. Yakupoglu
发明人： Cyprian E. Uzoh , Homayoun Talieh , Bulent M. Basol , Halit N. Yakupoglu
IPC分类号： C25F3/00
CPC分类号： H01L21/32125
摘要： The methods and systems described provide for radiation assisted material deposition, removal, and planarization at a surface, edge, and/or bevel of a workpiece such as a semiconductor wafer. Exemplary processes performed on a workpiece surface having topographical features include radiation assisted electrochemical material deposition, which produces an adsorbate layer outside of the features to suppress deposition outside of the features and to encourage, through charge conservation, deposition into the features to achieve, for example, a planar surface profile. A further exemplary process is radiation assisted electrochemical removal of material, which produces an adsorbate layer in the features to suppress removal of material from the features and to encourage, through charge conservation, removal of material outside of the features so that, for example, a planar surface profile is achieved.
摘要翻译：所描述的方法和系统提供了诸如半导体晶片的工件的表面，边缘和/或斜面处的辐射辅助材料沉积，去除和平坦化。在具有形貌特征的工件表面上执行的示例性工艺包括辐射辅助电化学材料沉积，其在特征之外产生吸附物层以抑制特征外的沉积，并且通过电荷保存沉积到特征中以实现例如，平面表面轮廓。进一步的示例性方法是材料的辐射辅助电化学去除，其在特征中产生吸附物层以抑制材料从特征中的去除并且通过电荷保持除去特征外的材料，从而例如，实现了平面表面轮廓。

42. 发明授权

US07247558B2 Method and system for electroprocessing conductive layers 有权
标题翻译：导电层电加工方法及系统
公开(公告)号：US07247558B2
公开(公告)日：2007-07-24
申请号：US11088324
申请日：2005-03-23
申请人： Bulent M Basol , Homayoun Talieh
发明人： Bulent M Basol , Homayoun Talieh
IPC分类号： H01L21/4763 , H01L21/461
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , H01L21/32125 , H01L21/7684 , H01L21/76877
摘要： The invention provides a process for forming a planar copper structure on a wafer surface in a first module and a second module of a system. During the process, a copper layer is formed on the wafer surface by utilizing an electrochemical deposition process in the first module. After the deposition, the wafer is moved to the second module of the system and an electrochemical mechanical polishing process is applied to planarize the copper layer to a predetermined thickness. The first and second modules can be positioned in a cluster tool. The wafer is subsequently processed by selective copper CMP and selective barrier layer CMP, which are conducted in another cluster tool.
摘要翻译：本发明提供一种在系统的第一模块和第二模块中的晶片表面上形成平面铜结构的工艺。在该过程中，通过在第一模块中利用电化学沉积工艺在晶片表面上形成铜层。在沉积之后，将晶片移动到系统的第二模块，并且施加电化学机械抛光工艺以将铜层平坦化至预定厚度。第一个和第二个模块可以放置在集群工具中。随后通过选择性铜CMP和选择性阻挡层CMP处理晶片，其在另一个簇工具中进行。

43. 发明授权

US07244347B2 Method and system to provide electrical contacts for electrotreating processes 有权
公开(公告)号：US07244347B2
公开(公告)日：2007-07-17
申请号：US10282911
申请日：2002-10-28
申请人： Bulent M. Basol , Homayoun Talieh , Cyprian E. Uzoh
发明人： Bulent M. Basol , Homayoun Talieh , Cyprian E. Uzoh
IPC分类号： C25D21/12 , C25D17/00
CPC分类号： H01L21/67086 , C25D7/12 , C25D17/001 , C25D17/005 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

44. 发明授权

US07211174B2 Method and system to provide electrical contacts for electrotreating processes 失效
标题翻译：为电镀工艺提供电接点的方法和系统
公开(公告)号：US07211174B2
公开(公告)日：2007-05-01
申请号：US10283025
申请日：2002-10-28
申请人： Bulent M Basol , Homayoun Talieh , Boguslaw A. Nagorski , Cyprian E. Uzoh , Jeffrey A. Bogart
发明人： Bulent M Basol , Homayoun Talieh , Boguslaw A. Nagorski , Cyprian E. Uzoh , Jeffrey A. Bogart
IPC分类号： C25D17/00
CPC分类号： C25D17/001 , C25D17/005 , H01L21/2885 , H01L21/3212 , H01L21/67086 , H01L21/76877
摘要： Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.
摘要翻译：提供了向工件提供电接触以促进电镀工艺（包括电镀和电蚀工艺）的系统和方法。

45. 发明授权

US07129165B2 Method and structure to improve reliability of copper interconnects 有权
标题翻译：提高铜互连可靠性的方法和结构
公开(公告)号：US07129165B2
公开(公告)日：2006-10-31
申请号：US10858766
申请日：2004-06-01
申请人： Bulent M. Basol , Homayoun Talieh
发明人： Bulent M. Basol , Homayoun Talieh
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/2885 , H01L21/7684 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a conductor structure on a surface of a wafer is provided. The surface of the wafer includes cavities separated by field regions. Initially, a barrier layer is deposited on the surface that includes cavities separated by field regions. A thin seed layer with a substantially uniform thickness is deposited on the barrier layer. The barrier layer and the seed layer portions in the cavities occupy less than 30% of the volume of each cavity. The remaining volume of each cavity is filled with a conductive material which is formed on the seed layer. The conductive layer has a substantially small thickness. After forming the conductive layer, the wafer is annealed to increase grain size in the conductive layer and the seed layer.
摘要翻译：提供了在晶片表面上形成导体结构的方法。晶片的表面包括由场区域分隔开的空腔。最初，阻挡层沉积在包括由场区域分离的空腔的表面上。在阻挡层上沉积厚度基本均匀的薄种子层。空腔中的阻挡层和种子层部分占据每个空腔体积的30％以下。每个空腔的剩余体积填充有形成在种子层上的导电材料。导电层具有基本上小的厚度。在形成导电层之后，将晶片退火以增加导电层和晶种层中的晶粒尺寸。

46. 发明授权

US07097755B2 Electrochemical mechanical processing with advancible sweeper 有权
公开(公告)号：US07097755B2
公开(公告)日：2006-08-29
申请号：US10288558
申请日：2002-11-04
申请人： Bulent M. Basol , Halit N. Yakupoglu , Cyprian E. Uzoh , Homayoun Talieh
发明人： Bulent M. Basol , Halit N. Yakupoglu , Cyprian E. Uzoh , Homayoun Talieh
IPC分类号： C25D5/00 , C25F3/00
CPC分类号： H01L21/76879 , B24B21/04 , B24B37/046 , B24B37/26 , C25D5/02 , C25D5/06 , C25D5/22 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： The present invention provides an apparatus for electrochemical mechanical processing of a surface of a workpiece by utilizing a process solution. The apparatus of the present invention includes an electrode touching the process solution, a belt workpiece surface influencing device extended between a supply spool and a receiving spool. During the process, the surface of the workpiece is placed in proximity of the workpiece surface influencing device and the process solution is flowed through the process section and onto the surface while a potential difference is applied between the electrode and the surface of the workpiece.

47. 发明授权

US06939206B2 Method and apparatus of sealing wafer backside for full-face electrochemical plating 有权
标题翻译：用于全面电化学电镀的晶片背面密封方法和装置
公开(公告)号：US06939206B2
公开(公告)日：2005-09-06
申请号：US10159295
申请日：2002-05-31
申请人： Jalal Ashjaee , Homayoun Talieh , Bulent M. Basol , Konstantin Volodarsky
发明人： Jalal Ashjaee , Homayoun Talieh , Bulent M. Basol , Konstantin Volodarsky
IPC分类号： B24B37/30 , C25D7/12 , C25D17/00 , C25D17/06 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/683 , B24B1/00
CPC分类号： H01L21/67126 , B24B37/30 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/06 , H01L21/6704 , H01L21/6715 , H01L21/6838
摘要： The present invention provides a wafer carrier that includes a plurality of concentric sealing members that provide a seal, with the outer seal independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier, and a plurality of vacuum openings that a re disposed only adjacent to an inner side of the inner seal at a location corresponding to the backside periphery of the wafer.
摘要翻译：本发明提供了一种晶片载体，其包括提供密封的多个同心密封构件，其中外部密封独立地可移动以允许在晶片仍然附接到晶片载体的同时清洁晶片的外围背面，以及多个真空开口，其在与所述晶片的所述背面周边相对应的位置处重新设置成与所述内部密封件的内侧相邻。

48. 发明授权

US06821409B2 Electroetching methods and systems using chemical and mechanical influence 有权
标题翻译：使用化学和机械影响的电蚀方法和系统
公开(公告)号：US06821409B2
公开(公告)日：2004-11-23
申请号：US10117991
申请日：2002-04-05
申请人： Bulent M. Basol , Cyprian E. Uzoh , Paul Lindquist , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian E. Uzoh , Paul Lindquist , Homayoun Talieh
IPC分类号： B23H308
CPC分类号： C25D17/001 , B23H5/08 , C25D5/22 , C25F3/14 , C25F7/00 , H01L21/32134
摘要： The present invention applies an electrochemical etching solution to a material layer, preferably a metal layer, disposed on a workpiece, in the presence of a current. This electrochemical etching solution supplies to the material on the substrate surface the species to form an intermediate compound on the surface that can be more easily mechanically removed as intermediate compound fragments than the material. By removing the intermediate compound fragments, the process allows more efficient use of the supplied current to form another layer of intermediate compound that can also be mechanically removed, rather than using the current to result in another compound on the surface of the material that eventually dissolves into the solution. In another aspect of the invention, such intermediate compound particulates are externally generated and used to mechanically remove the surface layer of the material. Such intermediate particulates do not contaminate, and thus allow for more efficient material removal, as well as plating to occur within the same chamber, if desired.
摘要翻译：本发明在存在电流的情况下将电化学蚀刻溶液应用于设置在工件上的材料层，优选金属层。该电化学蚀刻溶液向基材表面上的材料提供物质，以在表面上形成中间体化合物，其可以比材料作为中间体化合物片段更容易地机械去除。通过去除中间体化合物片段，该方法允许更有效地使用所提供的电流以形成也可机械去除的另一层中间体化合物，而不是使用电流导致最终溶解的材料表面上的另一种化合物进入解决方案。在本发明的另一方面，这种中间体化合物颗粒是外部生成的并用于机械地去除材料的表面层。如果需要，这样的中间颗粒不会污染，因此允许更有效的材料去除以及电镀发生在相同的室内。

49. 发明授权

US06780772B2 Method and system to provide electroplanarization of a workpiece with a conducting material layer 有权
标题翻译：提供工件与导电材料层的电平面化的方法和系统
公开(公告)号：US06780772B2
公开(公告)日：2004-08-24
申请号：US10032219
申请日：2001-12-21
申请人： Cyprian E. Uzoh , Bulent M. Basol , Homayoun Talieh
发明人： Cyprian E. Uzoh , Bulent M. Basol , Homayoun Talieh
IPC分类号： H01L21302
CPC分类号： H01L21/76843 , C25F3/14 , H01L21/288 , H01L21/32115 , H01L21/3212 , H01L21/7684 , H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods to operate upon a nonplanar top surface of a conductive surface layer of a workpiece, so as to, for example, preserve the structural integrity of a dielectric film layer disposed below the conductive surface layer, are presented. According to an exemplary method, a layer of conducting material such as a conducting paste is applied over the nonplanar top surface of the conductive surface layer to obtain a planar top surface. At least a portion of the conducting material layer and at least a portion of the conductive surface layer are removed in a planar manner to at least partially planarize the nonplanar top surface. The conducting material layer may be annealed so that the conducting material layer diffuses with the conductive surface layer prior to removal of at least the portions of conducting material layer and the conductive surface layer.
摘要翻译：提供了在工件的导电表面层的非平面顶表面上操作以便例如保持设置在导电表面层下方的电介质膜层的结构完整性的系统和方法。根据示例性方法，在导电表面层的非平面顶表面上施加诸如导电浆料的导电材料层以获得平坦的顶表面。导电材料层的至少一部分和导电表面层的至少一部分以平面方式去除，以至少部分平坦化非平面顶表面。导电材料层可以退火，使得在去除至少导电材料层和导电表面层的部分之前，导电材料层与导电表面层扩散。

50. 发明申请

US20060219573A1 Apparatus with conductive pad for electroprocessing 有权
标题翻译：具有电加工导电垫的装置
公开(公告)号：US20060219573A1
公开(公告)日：2006-10-05
申请号：US11445594
申请日：2006-06-01
申请人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol , Douglas Young
发明人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol , Douglas Young
IPC分类号： B23H3/00
CPC分类号： B24B37/20 , B24B37/046 , B24B37/24 , B24B37/26 , C25D5/06 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/2885 , H01L21/76877
摘要： The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece. Upon application of power to the anode plate and the cathode workpiece, the electrolyte solution disposed in the plating apparatus is used to deposit the conductive material on the workpiece surface using cylindrical rollers having the pad or blade type objects.
摘要翻译：本发明涉及通过旋转靠近基板的垫片或刀片型物体来在半导体衬底上镀覆导电材料的方法和装置，从而消除/减少凹陷和空隙。这通过提供安装在圆柱形阳极或辊子上的垫片或刀片型物体，并使用设置在垫片上或穿过垫片上的电解质溶液将导电材料施加到衬底来实现。在本发明的一个实施例中，衬垫或刀片型物体安装在圆柱形阳极上并围绕第一轴线旋转，同时工件可以是静止的或围绕第二轴线旋转，并且来自电解质溶液的金属沉积在工件上，在工件和阳极之间施加电位差。在本发明的另一实施例中，电镀装置包括与阴极工件间隔开的阳极板。在向阳极板和阴极工件施加电力时，使用设置在电镀装置中的电解液将导电材料沉积在工件表面上，使用具有焊盘或刀片型物体的圆柱形辊。

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