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41. 发明专利

JPH04346672A MICROWAVE PLASMA TREATING DEVICE 失效
公开(公告)号：JPH04346672A
公开(公告)日：1992-12-02
申请号：JP11834091
申请日：1991-05-23
申请人： HITACHI LTD , HITACHI ENG SERVICE
发明人： SAITO KATSUAKI , FUKUDA TAKUYA , OGAMI MICHIO , SUZUKI KAZUO
IPC分类号： C23C16/50 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/31
摘要： PURPOSE:To bring a resonance position to the position where a microwave electric field is max. and to stabilize the process by specifying the distance between a microwave reflection surface and the main forming position of the plasma in the microwave plasma treating device which utilizes electron cyclotron resonance and has the reflection surface. CONSTITUTION:A microwave guide 3 is connected to a vacuum vessel 1 via a quartz window 2 above this chamber and the microwaves are introduced into the vessel 1. The gases introduced from gas nozzles 4, 5 are converted to plasma by the electron cyclotron electric field generated by a magnetic field coil 6 provided around the vessel 1. The substrate 9 is treated by this plasma. The incident microwaves on the inside of the vessel 1 are reflected by the respective parts (substrate holder 11, substrate 9, inside walls of the vessel 1, etc.) approximately perpendicular to the propagation direction thereof. The distance between the reflection surface and the main forming position of the plasma of such microwave plasma CVD device is set approximately at odd times the quarter of the component of the microwave wavelength perpendicular to the reflection surface. The high-quality and high-performance plasma treatment is executed with good reproducibility in this way.

42. 发明专利

JPH04206726A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH04206726A
公开(公告)日：1992-07-28
申请号：JP33665790
申请日：1990-11-30
申请人： HITACHI LTD , HITACHI ENG SERVICE
发明人： SAITO KATSUAKI , FUKUDA TAKUYA , OGAMI MICHIO , HIROSE SHUNICHI , SUZUKI KAZUO
IPC分类号： H01L21/285 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To acquire a device which can prevent generation of reflection wave and keep a stable plasma state by using a method such as arrangement of a microwave absorbing material at least in a part opposite to a microwave introduction port inside a plasma reaction chamber. CONSTITUTION:A plasma treatment device which carries out surface treatment of a sample 12 by plasma generated by using cavity resonance of microwave is provided with a plasma reaction chamber 17 provided with a microwave introduction port and reaction gas introduction ports 10, 11, a waveguide 3 which transmits microwave 8 generated in a microwave generation source 1 to a plasma reaction chamber 17, a reflection wave detection means 4 for detecting power of reflection wave which transmits in a reverse direction in the waveguide 3 and a microwave absorbing material 50 arranged at least in a part opposite to the microwave introduction port inside the plasma reaction chamber 17. The microwave absorbing material 50 is selectively provided to a region which reflects microwave and generates reflection wave such as a part opposite a discharge tube 6 of an inner wall of the reaction chamber 17 and a surface of a sample holder 13.

43. 发明专利

JPH09252109A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH09252109A
公开(公告)日：1997-09-22
申请号：JP6053796
申请日：1996-03-18
申请人： HITACHI LTD
发明人： KATO SHUJI , WATANABE TOKUO , SAI SAIGOU , YOKOTA TAKESHI , ISHIKAWA KATSUMI , SAITO KATSUAKI
IPC分类号： H01L29/74 , H01L21/332
摘要： PROBLEM TO BE SOLVED: To optimize both the on voltage and dv/dt resistance of a semiconductor device having thyristor structure by making the sheet resistance value of the P base of a second region with a main thyristor section higher than that of the P base of a first region with a light-receiving section and an auxiliary thyristor section. SOLUTION: The sheet resistance value of the second region B of a P base layer 3 is made higher than that of a first region A. The sheet resistance value of the first region is set concretely in 500-900Ω/(square) and that of the second region in 900-2000Ω/(square). Consequently, the concentration of the base layer of the second region B is lowered and on voltage is reduced, and dv/dt resistance can be kept. Since the sheet resistance value of the P base of the second region of a main thyristor section is set in 900-2000Ω/(square), dv/dt resistance can be increased by decreasing the on voltage while shortening short-circuiting intervals without being subject to the effect of the on voltage.

44. 发明专利

JPH09162207A PRESSURE CONTACT SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09162207A
公开(公告)日：1997-06-20
申请号：JP32420695
申请日：1995-12-13
申请人： HITACHI LTD
发明人： KAMIJO HITOSHI , YAMAGUCHI TETSUO , SAITO KATSUAKI
IPC分类号： H01L29/74 , H01L21/52
摘要： PROBLEM TO BE SOLVED: To facilitate positioning a semiconductor material and preventing its rotation and improve reliability by providing rotation-preventive pins engaging with an external electrode that is not in contact with the semiconductor material. SOLUTION: A semiconductor material 31 has a plastic edge protector 12 with a projection 12a that engages with recesses 13a provided in an insulating ring 13 for securing the semiconductor material. The engagement of the projections 12a with the recesses 13a serves to position the semiconductor material with respect to the insulating ring and prevent its rotation. On the other hand, the insulating ring is prevented from rotating by means of pins 14 that seat at one end in recesses 13b in the underside of the insulating ring 13 and at the other end in recesses 2a opened in an external electrode 2, and thus the semiconductor material is prevented from rotation.

45. 发明专利

JPH09102598A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09102598A
公开(公告)日：1997-04-15
申请号：JP25597195
申请日：1995-10-03
申请人： HITACHI LTD
发明人： ISHIKAWA KATSUMI , SAITO KATSUAKI , SATO YUTAKA , WATANABE TOKUO
IPC分类号： H01L29/74
摘要： PROBLEM TO BE SOLVED: To reduce the reverse recovery while suppressing the increase in the ON voltage by forming the area that the life time of a substrate depth direction from the second main electrode to the first main electrode is shortened at a second emitter layer side. SOLUTION: A thyrsitor has a four-layer structure of an n-type emitter layer 21, a P-type base layer 22, an n-type base layer 23, and a p-type emitter layer 24. A cathode electrode 31 is pressurized to an upper electrode post via an upper intermediate electrode plate 33, and an anode electrode 32 is pressurized to a lower electrode post via a lower intermediate electrode plate 34. The element end is covered with a passivation film 41. The life time of the substrate depth direction from the layer 24 to the layer 21 is so formed by controlling a lattice defect area 11 as to shorten at the layer 24 side. Thus, the reverse recovery charge can be reduced while suppressing the increase in the ON voltage to low.

46. 发明专利

JPH07335860A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07335860A
公开(公告)日：1995-12-22
申请号：JP12728794
申请日：1994-06-09
申请人： HITACHI LTD
发明人： SATO YUTAKA , SAITO KATSUAKI
IPC分类号： H01L29/74
摘要： PURPOSE:To provide a semiconductor device wherein forward voltage drop and irregularity of reverse recovery charge are little. CONSTITUTION:The life time of the N-base layer 23 of a thyristor is measured. Elements are grounded according to the measured value, and P emitter layers whose surface concentrations are different in every group are formed on the surface of a P-emitter layer. Since carriers are injected in the N-base layer 23 in the electrically continuous state according to the value of the life time, the carrier concentration becomes equal in the respective elements, and both forward voltage drop and irregularity of reverse recovery charge are reduced.

47. 发明专利

JPH07335730A SURFACE TREATMENT EQUIPMENT AND SEMICONDUCTOR SURFACE TREATING METHOD 失效
公开(公告)号：JPH07335730A
公开(公告)日：1995-12-22
申请号：JP12375694
申请日：1994-06-06
申请人： HITACHI LTD
发明人： SAITO KATSUAKI , SAISU KOICHI , KAMIJO HITOSHI , YAMAGUCHI YOSHIO , TAKADA MASANORI
IPC分类号： H01L29/74 , H01L21/304 , H01L21/306 , H01L21/68 , H01L21/683
摘要： PURPOSE:To increase the speed of the etching treatment process of a semiconductor substrate, to which bevel machining is carried out, and to improve and stabilize the etching treatment process. CONSTITUTION:A sealing member 102c is abutted against the surface not etched of a thyristor substrate 101 held to a work holder 102, a treatment is worked while protecting the sealing member, and the substrate 101 is etched and treated. A vacuum breaking chamber 102e is formed between a sealing member 102b working vacuum suction force to the thyristor substrate 101 and the sealing member 102c, thus preventing the generation of pressure difference on the abutting surface of the sealing member 102c, then obviating the intrusion of the treatment.

48. 发明专利

JPH0758312A OVERVOLTAGE SELF PROTECTION TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0758312A
公开(公告)日：1995-03-03
申请号：JP20534893
申请日：1993-08-19
申请人： HITACHI LTD
发明人： KOSAKA HIROSHI , SAITO KATSUAKI , MOROZUMI KAZUNORI
IPC分类号： H01L29/74 , H01L29/861
摘要： PURPOSE:To provide an overvoltage self protection type semiconductor device which can obtain the preset breakover voltage and shows a very small tempera ture change. CONSTITUTION:In an overvoltage self protection type semiconductor device comprising a main thyristor portion M, an auxiliary thyristor portion A, a pilot thyristor portion P and a breakover portion B and having an n layer 14 with a ring type plan view in the breakover portion B, a cathode electrode 53 is provided in the n layer 14 to allow the considerable part of a current due to holes thermally generated in the depletion layer extending in the main junction area with application of voltage to escape therefrom. Therefore, fluctuation in breakover voltage due to fluctuation in temperature can be controlled. Accordingly, a semiconductor device which can surely realize overvoltage protection for wider range of temperature without influence of the temperature used.

49. 发明专利

JPH0715005A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0715005A
公开(公告)日：1995-01-17
申请号：JP14327493
申请日：1993-06-15
申请人： HITACHI LTD
发明人： SATO YUTAKA , SAITO KATSUAKI , NAGASU MASAHIRO
IPC分类号： H01L29/74 , H01L31/111
摘要： PURPOSE:To enable ignition by visible light, and improve ignition sensitivity, in an optical thyristor constituted of silicon carbide. CONSTITUTION:An optical thyristor consists of the following; four semiconductor layers composed of silicon carbide, i.e., an N-type emitter layer 21, a P-type base layer 22, an N-type base layer 23 and a P-type emitter layer 24, a cathode electrode 41 and an anode electrode 42 which are brought into low resistance contact with the main surface of the semiconductor layer, and a light guide 31 for applying an optical trigger signal. In the optical thyristor, a part or the whole part of at least one semiconductor layer is constituted as the crystal structure 11 whose band gap is narrower than that of the other part or the structure having microcrystal composed of silicon. Since the band gap energy of silicon carbide is larger than the energy of visible light, carrier is effectively generated therein, and turns the optical thyristor into the conduction state.

50. 发明专利

JPH06283500A SEMICONDUCTOR PRODUCTION DEVICE AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06283500A
公开(公告)日：1994-10-07
申请号：JP7154093
申请日：1993-03-30
申请人： HITACHI LTD
发明人： SAITO KATSUAKI , TAKADA MASANORI , MAGARA MASATAKA , MOCHIZUKI YASUHIRO
IPC分类号： C23C16/50 , C30B25/14 , H01L21/205 , H01L21/31
摘要： PURPOSE:To provide a film forming device, in which the reliability of an element is ensured and which can form an excellent film even on the end face section of the element, by forming the insulating protective film of the end face section of a high breakdown strength semiconductor device in the organic film of polyimide, etc., or the laminated film of an SiO2 film and an SiN film for preventing the infiltration of moisture. CONSTITUTION:In a plasma CVD semiconductor production device, the shape of en electrode 108 or the direction of the blowing-off of a reaction gas is formed in an approximately similar figure to the contour of a semiconductor substrate 110 and in a shape surrounding the contour of the substrate 110. Accordingly, an insulating film having uniform excellent film quality can also be formed on the end face section of the semiconductor substrate 110. The reliability of a high breakdown strength semiconductor device such as a thyristor using an SiN film as an end-face protective film is improved.

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