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41. 发明专利

JPH0420274B2 失效
公开(公告)号：JPH0420274B2
公开(公告)日：1992-04-02
申请号：JP15628281
申请日：1981-10-02
申请人： HITACHI LTD
发明人： OOCHI HIROBUMI , MATSUDA HIROSHI , MORIOKA MAKOTO , KAWADA MASAHIKO , KURATA KAZUHIRO , KOGA YASUSHI
IPC分类号： H01L31/107 , H01L31/10

42. 发明专利

JPH03289131A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03289131A
公开(公告)日：1991-12-19
申请号：JP9035790
申请日：1990-04-06
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： MATSUDA HIROSHI , ITO KAZUHIRO , NAGANO YUJI
IPC分类号： H01L21/22 , H01L31/107
摘要： PURPOSE:To improve the controllability of junction position by implanting ions into a semiconductor wafer, and performing first heat treatment at a specified temperature or more, and overlaying an insulating film, which covers the ion implantation part of this wafer, and the performing second heat treatment at a specified temperature or less. CONSTITUTION:An n -InP buffer layer 2, an n -InGaAs light absorbing layer 3, an n -InGaAsP down wall relaxing layer 4, an n-InP electric field relaxing layer 5, and an n -InP window layer 6 are grown continuously in order on an n -InP substrate 1, using an MOVPE method. After implanting Be ions with the photoresist as a mask, the first annealing at 680 deg.C or more, with a PSG film as a cap material, and the second annealing ay 650 deg.C or less with an SiNx as a mask material, are performed to form a p-type guard ring region 7. Then, by the usual selective diffusion of Zn, a p type main junction area 8 is made, and an insulating film 9, a p electrode 10, and an n electrode 11 are formed. Hereby, pn junction position by the annealing after ion implantation can be made excellently in controllability, and the productivity improves.

43. 发明专利

JPH03220744A METHOD OF SEMICONDUCTOR CHARACTERISTIC EVALUATION 失效
公开(公告)号：JPH03220744A
公开(公告)日：1991-09-27
申请号：JP1492990
申请日：1990-01-26
申请人： HITACHI LTD
发明人： NAGATSUMA KAZUYUKI , ITO KAZUHIRO , MATSUDA HIROSHI , KANEKO TADAO , HANEDA MAKOTO
IPC分类号： G01R31/26 , H01L21/66
摘要： PURPOSE:To measure semiconductor characteristics simply and accurately by applying liquid metal to form electrodes on the upper (or lower) surface of n-type semiconductor and the lower (or upper) surface of p-type semiconductor. CONSTITUTION:A semiconductor is composed of layers having different doping concentrations. The semiconductor includes a surface layer of a first conductivity type 6 in which a p-n junction is formed by introducing an impurity of a second conductivity type. The n-type and p-type regions at the surface are brought into contact with liquid metals 1 and 2, respectively, to apply a voltage, so that voltage-current characteristics and voltage-capacitance characteristics may be measured to evaluate the quality and junction characteristics of the semiconductor. Since the evaluation is possible without complicated processes such as vacuum evaporation, accurate data is obtained in a short time.

44. 发明专利

JPH03184382A SEMICONDUCTOR LIGHT-RECEIVING DEVICE 失效
公开(公告)号：JPH03184382A
公开(公告)日：1991-08-12
申请号：JP32140889
申请日：1989-12-13
申请人： HITACHI LTD
发明人： ITO KAZUHIRO , MATSUDA HIROSHI , FUJIWARA ICHIRO
IPC分类号： H01L31/107
摘要： PURPOSE:To prevent a tunnel phenomenon for narrowing an amplified region and achieving a high-speed response by forming a window layer directly below a main joint for inducing an avalanche phenomenon. CONSTITUTION:An In0.5Ga0.5As light-absorbing layer 42 and an electric field adjusting layer 43 are formed on an InP substrate 41. For example, forbidden band is made larger at the side of a layer 44 and smaller at the side of a layer 42 as in an In0.65Ga0.3As0.7P0.3 (1X10 cm , n-type 0.1mum), an In0.6Ga0.4As0.4P0.6 (1X10 cm , n-type, 0.1mum), an InP (2X10 cm , n-type, 0.1mum), and an In0.9Ga0.1 P (8X10 cm , n-type, 0.2mum) for changing in small steps and then an InP window layer 44 (1X10 cm , n-type, 1.8mum) is formed on it. Then, a p-type impurities are introduced for forming regions 45 and 46 which are converted into p type, and one part 52 of the window layer 44 is left as n type directly below the p-type region 46, thus forming an amplified region.

45. 发明专利

JPH03163880A SEMICONDUCTOR PHOTODETECTOR 失效
公开(公告)号：JPH03163880A
公开(公告)日：1991-07-15
申请号：JP30211389
申请日：1989-11-22
申请人： HITACHI LTD
发明人： MATSUDA HIROSHI , ITO KAZUHIRO , FUJIWARA ICHIRO
IPC分类号： H01L31/107
摘要： PURPOSE:To obtain photosensitivity within a low voltage range by forming at least one part of an optical absorption region having a first conductivity type in a second conductivity type having low carrier concentration. CONSTITUTION:A semiconductor photodetector is composed of an N -InP substrate 1, an N-type InGaAs optical absorption layer 2, an N-type InP multiplying layer 3, an N-type InP window layer 4, a P-type region 5 as a guard ring, a P-type region 6 as a main junction and a P-type optical absorption region 7 having low carrier concentration. At least one part is changed into a depletion layer by the built-in potential of the hetero-junction of InP/InGaAs and a P-N junction in the P-type optical absorption layer 7 having low carrier concentration. When 0-3V reverse bias voltage is applied previously between the P-type region 6 as the main junction and the N -InP substrate 1, carriers generated by light projected to the section changed into the depletion layer in the P-type optical absorption region 7 having low carrier concentration are extracted to the outside as an electric signal. Accordingly, photosensitivity is acquired within a low voltage range.

46. 发明专利

JPH0316276A PHOTODETECTOR 失效
公开(公告)号：JPH0316276A
公开(公告)日：1991-01-24
申请号：JP14961689
申请日：1989-06-14
申请人： HITACHI LTD
发明人： FUJIWARA ICHIRO , ITO KAZUHIRO , NAGATSUMA KAZUYUKI , MATSUDA HIROSHI
IPC分类号： H01L31/107
摘要： PURPOSE:To acquire enough sensitivity at a long wavelength band and to improve ionization rate of a multiplication layer by using a semiconductor material of a large mismatching of a lattice constant and by forming a photoabsorption layer and a carrier multiplication layer. CONSTITUTION:A material having enough sensitivity at a long wavelength band is used for a photoabsorption layer 6, and a material having a large ionization rate is used for a carrier multiplication layer 3. When a lattice constant of the multiplication layer 3 and that of the photoabsorption layer 6 do not match, a lattice constant of the multiplication layer 3 whereto high electric field is applied is matched to that of a substrate. A photoabsorption layer is laminated on an upper part of the multiplication layer holding a distortion super lattice 5 between them, whose effect is exhibited logically and experimentally. An avalanche photo diode(APD), where to a reverse bias voltage is applied, operates forming a depletion layer by a semiconductor layer. A signal light 12 which is rapidly modulated is absorbed in the photoabsorption layer 6, produces electron/hole as a photocarrier, transits inside the depletion layer and is injected to the multiplication layer 3. Thereby, it is possible to acquire a very high speed APD having enough sensitivity in a long wavelength band and a large ionization rate in a multiplication layer.

47. 发明专利

JPH02135643A EARTH LEAKAGE BREAKER 失效
公开(公告)号：JPH02135643A
公开(公告)日：1990-05-24
申请号：JP28884388
申请日：1988-11-17
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： MATSUDA HIROSHI , SHIMANO TERUMI
IPC分类号： H01H83/02
摘要： PURPOSE:To improve the assembly workability of an earth leakage breaker while improving the strength and wear resistance of movable contact base periphery parts, by forming each interpolar insulating base as an unitary part independent of an earth leakage breaker case, and forming an opening in the case so as to enable the assembling of a zero phase current transformer with a three-phase connecting wire passing therethrough. CONSTITUTION:Each interpolar insulating base 20 serving both as an insulator between the respective poles of a dashpot relay 14 and as the stopper 20a of a movable contact base 8 is formed as an unitary part independent of an earth leakage breaker case 1. Besides, an opening is formed in the case so as to enable the assembling of a zero-phase current transformer 13 with a three-phase connecting wire 11 passing therethrough. Whereby a dashpot relay section assembly such as the movable contact base 8, the conductive connecting wire 11 being connected thereto, the zero-phase current transformer 13 and an earth leakage detecting section, etc., is dropped into the case from the upper-face side thereof, and each interpolar insulating base 20 may be mounted and fixed in the case 1. Besides, the wear resistance of the earth leakage breaker is improved since the movable contact base 8 is pivotally supported for rotation.

48. 发明专利

JPH0220074A MANUFACTURE OF APD SEMICONDUCTOR PHOTODETECTOR 失效
公开(公告)号：JPH0220074A
公开(公告)日：1990-01-23
申请号：JP16885488
申请日：1988-07-08
申请人： HITACHI LTD
发明人： NAGATSUMA KAZUYUKI , ITO KAZUHIRO , MATSUDA HIROSHI , FUJIWARA ICHIRO , FUKUZAWA TADASHI
IPC分类号： H01L31/107 , H01L31/10
摘要： PURPOSE:To induce photomultiplier function effectively by using the simple substance or the compound of Zn or Cd as a diffusing source, forming a staircase type junction by thermal diffusion, covering the upper surface of an InP window layer with SiNX, performing heat treatment again, and changing the junction into a slant type junction. CONSTITUTION:An N -InP buffer layer 2, an N -InGaAs light receiving layer 3, an N-InGaAs intermediate layer 4, an N-InP multiplying layer 5, and an N -InP window layer 6 are sequentially grown as crystals on an N-type InP substrate 1. The entire surface of the InP window layer 6 is covered with SiNX 7. Thereafter, a doughnut pattern is formed by using photolithography. This element is put into a sealed ampule together with powder of CdP2. Thermal diffusion is performed for one hour at 550 deg.C. Then, the entire surface of the upper part of the N -InP window layer 6 is covered 7 again with SiNX. Thereafter, heat treatment is performed for 10 hours at 450 deg.C in vacuum. Then, the SiNX layer 7 is formed again on the upper part of the window layer 6. A main junction forming pattern is formed at the central part of the layer 7, as a diffusion mask. The specimen is put into a sealed ampule together with powder of ZnP2, and heat treatment is performed for 15 minutes at 550 deg.C.

49. 发明专利

JPH0197342A CIRCUIT BREAKER 失效
公开(公告)号：JPH0197342A
公开(公告)日：1989-04-14
申请号：JP25360687
申请日：1987-10-09
申请人： HITACHI LTD , HITACHI TECHNO ENG
发明人： OKADA SATORU , ISHII HIDEO , MATSUDA HIROSHI
IPC分类号： H01H73/02 , H01H73/06
摘要： PURPOSE:To secure safety at the time of wiring work by tripping an on-off mechanism of a circuit breaker when a terminal cover at the load side is released, dissociating a movable contact therefrom, and preventing the impression of voltage to a load side terminal from occurring. CONSTITUTION:A lever 12 being energized in direction of pressing a movable core 7 by a spring 22 is installed there as an open detecting means for a cover 10. The lever 12 is rotatably held in a phase-to-phase insulating part of a box body 30 of a breaker, and furthermore a terminal cover detecting part 12b is projected into a mounting hole part 13 of the terminal cover 10. Consequently, in an uninstalled state of the terminal cover 10, since the lever 12 presses the movable core 7 with a pressing part 12a installed in an arm, a circuit breaking part comes into a state of being tripped whereby voltage impression to a load terminal is prevented from occurring, while such a state that is not in ON operation is maintained. When the cover 10 is attached, an engaging part 10a pushes the terminal cover 12b and the lever 12 is pushed up so that the tripped state is released, thus the ON operation is made possible.

50. 发明专利

JPS6428969A PHOTODETECTOR 失效
公开(公告)号：JPS6428969A
公开(公告)日：1989-01-31
申请号：JP18341587
申请日：1987-07-24
申请人： HITACHI LTD
发明人： FUJIWARA ICHIRO , MATSUDA HIROSHI , ITO KAZUHIRO , NAGATSUMA KAZUYUKI
IPC分类号： H01L31/107 , H01L31/10
摘要： PURPOSE:To obtain an avalanche photodiode (APD) with a product of a gain and a band width in its element being improved, by using superlattices which are laminated in thickness so that electrons or holes are made pass therethrough freely by a tunnel effect to compose two semiconductor layers different in their forbidden band width. CONSTITUTION:An n -InP layer 2, a light absorbing layer (n -InGaAs) 3, a buffer (n -InGaAsP) 4, a carrier multiplying layer 5 made of an n-type superlattice (InGaAs)m(InP)n, an n InP window layer 6 are made to grow serially on an n-type InP substrate 1 by the use of a MOCVD method or a MBE method. A light signal of 1mum incident to the surface of this element is photoelectrically converted to produce photocarriers in the light absorbing layer 3. A pn junction of the APD is inversely biased, and photocarriers produced are injected into the carrier multiplying layer 5 by a drift electric field. Not electrons but phonons are localized in the carrier multiplying layer 5 according to the quality of a very thin superlattice. A saturation speed is regulated by a value of interaction of Lo phonons to electrons or holes. Accordingly the saturation speed in the very thin superlattice is made larger than that in conventional thin film crystal.

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