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41. 发明申请

US20050211170A1 Chemical vapor deposition plasma reactor having plural ion shower grids 有权
标题翻译：具有多个离子淋浴网格的化学气相沉积等离子体反应器
公开(公告)号：US20050211170A1
公开(公告)日：2005-09-29
申请号：US10873463
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C14/35 , C23C16/00 , C23C16/04 , C23C16/507 , H01J37/32
CPC分类号： H01J37/32449 , C23C14/358 , C23C16/045 , C23C16/507 , H01J37/32357
摘要： A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower reactor region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece support in the process region faces the lowermost one of the ion shower grids. A reactive species source furnishes into the ion generation region a chemical vapor deposition precursor species. The reactor further includes a vacuum pump coupled to the reactor region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the set of ion shower grids. The orifices through at least some of the ion shower grids have an aspect ratio sufficient to limit ion trajectories in the reactor region to a narrow angular range about the non-parallel direction, and a resistance to gas flow sufficient to support a pressure drop between the ion generation and reactor regions of about at least a factor of 4. The grid potential source can be capable of applying different voltages to different ones of the grids.
摘要翻译：一种用于加工半导体工件的等离子体反应器包括反应室和一组多个并联离子淋浴网格，其将腔室分成上部离子产生区域和下部反应器区域，每个离子淋浴器网格具有相互配准的多个孔口网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。工艺区域中的工件支撑面向最下面的离子淋浴网格。反应物种源向离子产生区域提供化学气相沉积前体物质。反应器还包括耦合到反应器区域的真空泵，用于在离子产生区域中产生等离子体的等离子体源功率施加器和耦合到该组离子淋浴栅格的栅极电位源。通过至少一些离子淋浴栅格的孔口具有足以将反应器区域中的离子轨迹限制在围绕非平行方向的窄角度范围的宽高比，以及足以支持压力降离子产生和反应器区域至少约为4倍。电网电势源能够对不同的电网施加不同的电压。

42. 发明申请

US20120199071A1 PLASMA IMMERSION CHAMBER 审中-公开
标题翻译：等离子体浸泡室
公开(公告)号：US20120199071A1
公开(公告)日：2012-08-09
申请号：US13446732
申请日：2012-04-13
申请人： KENNETH S. COLLINS , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger, JR. , Daniel J. Hoffman , Amir Al-Bayati
发明人： KENNETH S. COLLINS , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger, JR. , Daniel J. Hoffman , Amir Al-Bayati
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： H01J37/32458 , H01J37/32412 , H01J37/32477
摘要： Embodiments described herein relate to a plasma chamber and processing system utilizing robust components. In one embodiment, a chamber is provided. The chamber includes a body having an interior volume, a gas distribution assembly disposed in the interior volume opposing a substrate support, the gas distribution assembly having a coolant channel disposed thereon, and a first hollow conduit and a second hollow conduit coupled to the body and in fluid communication with the interior volume.
摘要翻译：本文所述的实施例涉及使用鲁棒部件的等离子体室和处理系统。在一个实施例中，提供了一个室。所述腔室包括具有内部体积的本体，设置在所述内部体积中与衬底支撑件相对的气体分配组件，所述气体分配组件具有设置在其上的冷却剂通道，以及联接到所述主体的第一中空导管和第二中空导管，与内部容积流体连通。

43. 发明申请

US20080173237A1 Plasma Immersion Chamber 审中-公开
标题翻译：等离子体浸入室
公开(公告)号：US20080173237A1
公开(公告)日：2008-07-24
申请号：US12016810
申请日：2008-01-18
申请人： Kenneth S. Collins , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger , Daniel J. Hoffman , Amir Al-Bayati
发明人： Kenneth S. Collins , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger , Daniel J. Hoffman , Amir Al-Bayati
IPC分类号： C23C16/453
CPC分类号： H01J37/32458 , H01J37/32412 , H01J37/32477
摘要： Embodiments described herein generally provide a toroidal plasma source, a plasma channeling device, a showerhead, and a substrate support assembly for use in a plasma chamber. The toroidal plasma source, plasma channeling device, showerhead, and substrate support assembly are adapted to improve the usable lifetime of the plasma chamber, as well as reduce assembly cost, increase the plasma chamber reliability, and improve device yield on the processed substrates.
摘要翻译：本文描述的实施例通常提供环形等离子体源，等离子体引导装置，喷头和用于等离子体室的基板支撑组件。环形等离子体源，等离子体引导装置，喷头和基板支撑组件适于改善等离子体室的使用寿命，并且降低组装成本，增加等离子体室的可靠性，并提高处理的基板上的装置产量。

44. 发明授权

US07094316B1 Externally excited torroidal plasma source 失效
标题翻译：外部激发环形等离子体源
公开(公告)号：US07094316B1
公开(公告)日：2006-08-22
申请号：US09638075
申请日：2000-08-11
申请人： Hiroji Hanawa , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka , Yan Ye
发明人： Hiroji Hanawa , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka , Yan Ye
IPC分类号： C23C16/00 , C23F1/02
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively, coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.
摘要翻译：一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的工件支撑件面向所述外壳的上部，所述外壳具有穿过所述工件支撑件的大致相对侧的至少第一和第二开口。至少一个中空管道连接到第一和第二开口。通过导管提供封闭的环形路径，并且在第一和第二开口之间跨越晶片表面延伸。工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。线圈天线耦合到RF电源并且感应地耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

45. 发明授权

US06551446B1 Externally excited torroidal plasma source with a gas distribution plate 失效
标题翻译：外部激发的环形等离子体源与气体分配板
公开(公告)号：US06551446B1
公开(公告)日：2003-04-22
申请号：US09637174
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S. Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S. Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece includes a vacuum enclosure, including a wall, defining a vacuum chamber, the vacuum chamber having a main chamber portion on one side of the wall and a plenum on another side of the wall, the plenum communicating with the chamber portion through at least one opening in the wall, a workpiece support within the main chamber portion and facing the wall. A gas distribution plate is adjacent the wall and faces the workpiece support and is coupled to a reactive process gas supply for injecting reactive process gases directly into a process region adjacent the workpiece support. A gas injection port at the plenum is coupled to a diluent gas supply for injecting diluent gases into the plenum. A coil antenna adapted to accept RF power is inductively coupled to the interior of said plenum, and is capable of maintaining a plasma in a reentrant path through the plenum and across the process region.
摘要翻译：用于处理工件的等离子体反应器包括真空封壳，其包括限定真空室的壁，所述真空室具有在壁的一侧上的主室部分和在壁的另一侧上的增压室，室部分通过壁中的至少一个开口，主室部分内的工件支撑件并面向壁。气体分配板邻近壁并且面向工件支撑件并且与反应性工艺气体供应件相连接，用于将反应性工艺气体直接注入到与工件支撑件相邻的工艺区域中。增压室处的气体注入口与稀释气体供应装置连接，用于将稀释气体注入气室。适于接收RF功率的线圈天线感应耦合到所述增压室的内部，并且能够将等离子体维持在通过充气室并且跨越过程区域的折返路径中。

46. 发明授权

US06453842B1 Externally excited torroidal plasma source using a gas distribution plate 失效
标题翻译：使用气体分配板的外部激发的环形等离子体源
公开(公告)号：US06453842B1
公开(公告)日：2002-09-24
申请号：US09636700
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween, a hollow reentrant conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of said conduit sharing the interior environment. The conduit is adapted to accept irradiation of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.
摘要翻译：限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布板和基板支撑件，其间限定了其间的基板加工区域，中空折痕导管，其相应的端部通向气体分配板的相对侧上的基板处理区域，所述导管的内部共享内部环境。导管适于接受管道内的处理气体的照射，以在围绕导管内部延伸并且在腔室内部环境内的衬底处理区域上延伸的路径中维持等离子体。

47. 发明授权

US06410449B1 Method of processing a workpiece using an externally excited torroidal plasma source 失效
标题翻译：使用外部激发的环形等离子体源处理工件的方法
公开(公告)号：US06410449B1
公开(公告)日：2002-06-25
申请号：US09636436
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L21302
CPC分类号： H01J37/321 , H01J37/32082
摘要： A method of processing a workpiece in a plasma reactor includes establishing a torroidal path for a plasma current to flow that passes near and transverse to the surface of said workpiece, maintaining a plasma current in the torroidal path by applying RF power to a portion of the torroidal path away from the surface of the workpiece, and increasing the ion density of the plasma current in the vicinity of the workpiece by constricting the area of a portion of the torroidal path overlying the workpiece.
摘要翻译：在等离子体反应器中处理工件的方法包括建立用于等离子体电流的环形路径，其流过靠近和横向于所述工件的表面的流动，通过将RF功率施加到环形路径的一部分来维持在环形路径中的等离子体电流环形路径远离工件的表面，并且通过收缩覆盖工件的一部分环形路径的面积来增加工件附近的等离子体电流的离子密度。

48. 发明授权

US06348126B1 Externally excited torroidal plasma source 失效
标题翻译：外部激发环形等离子体源
公开(公告)号：US06348126B1
公开(公告)日：2002-02-19
申请号：US09636699
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece includes a chamber adapted to accept processing gases in an evacuated environment including a workpiece support, a hollow conduit defining a wall of the chamber, and having respective ends opening adjacent opposite sides of the workpiece support, and a chamber wall portion in facing relationship to the workpiece support and defining a workpiece processing zone therebetween, the processing zone and the interior of the conduit forming a torroidal interior path, and an RF energy applicator irradiating gas within the chamber to maintain a plasma within the torroidal interior path.
摘要翻译：一种用于加工工件的等离子体反应器包括适于在真空环境中接受处理气体的室，包括工件支撑件，限定室壁的中空导管，并且具有邻近工件支撑件的相对侧面打开的相应端部，以及室壁部分与工件支撑件形成面对关系并且在它们之间限定工件加工区域，处理区域和管道内部形成环形内部路径，以及RF能量施加器照射室内的气体以将等离子体维持在环形内部路径。

49. 发明授权

US06494986B1 Externally excited multiple torroidal plasma source 失效
标题翻译：外激发多环形等离子体源
公开(公告)号：US06494986B1
公开(公告)日：2002-12-17
申请号：US09636435
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second pairs of openings therethrough near generally opposite sides of the workpiece support. At least first and second hollow conduits are connected to respective pairs of the openings to provide at least first and second closed torroidal paths through the respective conduits and extending between respective pairs of the openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal paths. Coil antennas are coupled to RF power sources and inductively coupled to the interior of the hollow conduits and capable of maintaining a plasma in the torroidal paths.
摘要翻译：一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的面向所述外壳的上部的工件支撑件，所述外壳具有穿过所述工件支撑件的大体相对侧的至少第一和第二对开口。至少第一和第二空心管道连接到相应的一对开口，以提供至少第一和第二封闭的环形路径穿过相应的导管并且在相应的成对开口之间跨越晶片表面延伸。工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。线圈天线耦合到RF功率源，并且感应耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

50. 发明授权

US06468388B1 Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate 失效
标题翻译：用于外部激发的具有气体分配板的环形等离子体源的反应室
公开(公告)号：US06468388B1
公开(公告)日：2002-10-22
申请号：US09636434
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween. A hollow conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of the conduit sharing the interior environment. The conduit being adapted to accept irradiation by an RF field of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.
摘要翻译：限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布板和衬底支撑件限定其间的衬底处理区域。中空导管，其各自的端部通向气体分配板的相对侧的基板处理区域，导管的内部共享内部环境。所述管道适于接受RF管道内的处理气体的RF场辐射，以在围绕管道内部延伸并且在腔室内部环境内的衬底处理区域周围延伸的路径中维持等离子体。

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