专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06305072B1 Method for manufacturing thin film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US06305072B1
公开(公告)日：2001-10-23
申请号：US08979965
申请日：1997-11-26
申请人： Hiroaki Yoda , Susumu Hashimoto , Michiko Hara , Masashi Sahashi
发明人： Hiroaki Yoda , Susumu Hashimoto , Michiko Hara , Masashi Sahashi
IPC分类号： G11B542
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： When manufacturing a thin film magnetic head in which an upper magnetic pole is formed on a lower magnetic pole through a magnetic gap, firstly, at least on the lower magnetic pole, a convex portion possessing the width equivalent to a track width is formed. The convex portion forms a lower magnetic pole tip. Conforming to a contour of the convex shape of the lower magnetic pole, a non-magnetic material layer is formed. A flattening layer is formed on the non-magnetic material layer. The non-magnetic layer is etched with the flattening layer, for example, as a mask. In the non-magnetic material layer, a concave portion self-aligned to the lower portion magnetic pole top (convex portion) is formed. Inside the concave portion, a magnetic layer (upper magnetic pole tip) destined to be a part of the upper magnetic pole is formed. As to the lower magnetic pole tip and the upper magnetic pole tip, the widths of surfaces opposite to the magnetic gap are almost equal, and the central positions thereof almost overlap each other. Thus, a narrow track head structure with high accuracy can be obtained.
摘要翻译：当通过磁隙制造在下磁极上形成上磁极的薄膜磁头时，首先至少在下磁极上形成具有与磁道宽度相等的宽度的凸部。凸部形成下磁极末端。符合下磁极的凸形轮廓，形成非磁性材料层。在非磁性材料层上形成平坦化层。用平坦化层，例如作为掩模蚀刻非磁性层。在非磁性材料层中，形成与下部磁极顶部（凸部）自对准的凹部。在凹部内部形成着作为上磁极的一部分的磁性层（上磁极端）。对于下磁极尖端和上磁极尖端，与磁隙相反的表面的宽度几乎相等，并且其中心位置几乎彼此重叠。因此，可以获得高精度的窄轨道头结构。

42. 发明授权

US6064552A Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode 失效
标题翻译：具有磁轭和巨磁电阻元件的磁阻头，使得第一电极形成在巨磁电阻元件上，磁阻元件又形成在用作第二电极的磁轭上
公开(公告)号：US6064552A
公开(公告)日：2000-05-16
申请号：US42696
申请日：1998-03-17
申请人： Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Yoda
发明人： Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Yoda
IPC分类号： G11B5/31 , G11B5/39 , G11B5/40
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3919 , G11B5/3925 , G11B5/3948 , G11B5/3967 , G11B5/40 , G11B2005/3996 , G11B5/3156 , G11B5/3183
摘要： A magnetoresistive head comprising, a magnetic yoke defining a magnetic gap for guiding signal magnetic fields from a recording medium at the air-bearing surface, a giant magnetoresistive element magnetically coupled with the magnetic yoke at a position remote from the air-bearing surface, and means for supplying a sense current in a direction substantially perpendicular to the surface of the giant magnetoresistive element.
摘要翻译：一种磁阻头，包括：限定用于引导来自空气轴承表面的记录介质的信号磁场的磁隙的磁轭;在远离空气轴承表面的位置处与磁轭磁耦合的巨磁阻元件，以及用于在基本垂直于巨磁阻元件的表面的方向上提供感测电流的装置。

43. 发明授权

US5872693A Thin-film magnetic head having a portion of the upper magnetic core coplanar with a portion of the lower magnetic core 失效
标题翻译：薄膜磁头具有与下部磁芯的一部分共面的上部磁芯的一部分
公开(公告)号：US5872693A
公开(公告)日：1999-02-16
申请号：US826749
申请日：1997-03-24
申请人： Hiroaki Yoda , Atsuhito Sawabe , Naoyuki Inoue , Akio Hori
发明人： Hiroaki Yoda , Atsuhito Sawabe , Naoyuki Inoue , Akio Hori
IPC分类号： G11B5/31
CPC分类号： G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3146 , G11B5/3153 , G11B5/3163
摘要： A thin-film magnetic head comprising a lower magnetic core formed on a substrate, an upper magnetic core formed on the lower magnetic core with a magnetic gap therebetween, and a coil interposed between the lower magnetic core and the upper magnetic core as insulated from the lower magnetic core and the upper magnetic core, characterized in that at least either of the lower magnetic core and the upper magnetic core comprises a front body of a magnetic pole facing a magnetic recording medium and a rear body of a magnetic pole having part thereof superposed on the front body of the magnetic pole, the rear body of the magnetic pole is disposed as recessed from the head surface facing the medium and held in contact with the front body of the magnetic pole in a plane, the plane is terminated at a rear of the end of the front body of the magnetic pole, and the rear body of the magnetic pole has a shape curved or bent in the direction opposite to the magnetic gap, and further the front body of the magnetic pole is composed of a magnetic member embedded in a trench formed in advance in an insulating layer.
摘要翻译：一种薄膜磁头，包括形成在基板上的下磁芯，形成在下磁芯上的上磁芯，其间具有磁隙，以及插入在下磁芯和上磁心之间的线圈，下磁芯和上磁芯，其特征在于，下磁芯和上磁芯中的至少一个包括面向磁记录介质的磁极的前体和磁极的后体，其部分叠加在磁极的前体上，磁极的后体被设置为从面向介质的头表面凹陷并且在平面中与磁极的前体保持接触，平面终止在后面的磁极的前体的端部，并且磁极的后体具有与磁隙相反的方向弯曲或弯曲的形状，并且还具有前体o f磁极由嵌入在预先形成在绝缘层中的沟槽中的磁性构件组成。

44. 发明授权

US5289868A Absorption chiller heater and unit-type air conditioning system 失效
标题翻译：吸收式制冷机和单元式空调系统
公开(公告)号：US5289868A
公开(公告)日：1994-03-01
申请号：US866431
申请日：1992-04-10
申请人： Yasuo Koseki , Ryuichi Kaji , Hiroaki Yoda , Takashi Nakao , Tomihisa Ohuchi , Akira Nishiguchi , Daisuke Hisajima , Katsuya Ebara
发明人： Yasuo Koseki , Ryuichi Kaji , Hiroaki Yoda , Takashi Nakao , Tomihisa Ohuchi , Akira Nishiguchi , Daisuke Hisajima , Katsuya Ebara
IPC分类号： F24F11/02 , F24F3/06 , F25B15/00 , F25B49/04 , F25B29/00
CPC分类号： F25B15/008 , F24F3/06 , F25B49/043 , Y02B30/62
摘要： An unit-type air conditioning system is provided to enable low-load operation of an absorption chiller heater, to thereby improve the load responsiveness, and to use such a chiller heater as an outdoor unit. A plurality of burners are provided in a high temperature generator of the absorption chiller heater, thereby enabling the low-load operation. A refrigerant return valve is provided so as to speed up the stop operation. Flow rates of pumps are controlled in accordance with detected values of temperatures in the chiller heater and a load change, thus improving the load responsiveness. Further, in the air conditioning system with this chiller heater serving as an outdoor unit, required operation prediction is performed on the basis of outer signals from load units and the like, and prediction control according to its result is conducted, further improving the load responsiveness.
摘要翻译：提供了一种单元型空调系统，以实现吸收冷却器加热器的低负载运行，从而提高负载响应性，并且使用这样的冷却器加热器作为室外单元。多个燃烧器设置在吸收式冷却器加热器的高温发生器中，从而能够进行低负荷运转。设置制冷剂返回阀，以加速停止操作。泵的流量根据检测到的冷却器加热器中的温度值和负载变化进行控制，从而提高了负载响应性。此外，在具有该冷却器加热器作为室外机的空调系统中，根据来自负载单元等的外部信号进行所需的运行预测，进行根据其结果的预测控制，进一步提高负载响应性。

45. 发明授权

US5275010A Control method and apparatus of absorption chiller heater 失效
标题翻译：吸收冷却器加热器的控制方法和装置
公开(公告)号：US5275010A
公开(公告)日：1994-01-04
申请号：US933209
申请日：1992-08-21
申请人： Daisuke Hisajima , Tomihisa Ohuchi , Akira Nishiguchi , Yasuo Koseki , Michihiko Aizawa , Hiroaki Yoda , Takashi Nakao
发明人： Daisuke Hisajima , Tomihisa Ohuchi , Akira Nishiguchi , Yasuo Koseki , Michihiko Aizawa , Hiroaki Yoda , Takashi Nakao
IPC分类号： F25B15/00 , F25B49/04
CPC分类号： F25B49/043 , F25B15/008 , Y02B30/62
摘要： An individual air conditioning system with an absorption chiller heater having a controllable capacity, with thermal input to a burner of a high temperature regenerator being controlled by on-off control or the like even if the load is low. The temperature of cooling water is controlled in accordance with a concentration of refrigerant in an absorber, so that the refrigerating capacity of the absorption chiller heater can be freely varied from 0% to 100% without the refrigerant being frozen.
摘要翻译：具有可控制容量的吸收式冷却器加热器的单独空调系统，即使负载低，也可以通过开关控制等来控制高温再生器的燃烧器的热输入。冷却水的温度根据吸收器中的制冷剂的浓度来控制，使得吸收式冷却器加热器的制冷能力可以在0％至100％之间自由地变化，而不会使冷冻剂冷冻。

46. 发明授权

US5205137A Absorption air conditioner 失效
标题翻译：吸收式空调
公开(公告)号：US5205137A
公开(公告)日：1993-04-27
申请号：US755159
申请日：1991-09-05
申请人： Tomihisa Ohuchi , Akira Nishiguchi , Daisuke Hisajima , Seiichiro Sakaguchi , Yoshifumi Kunugi , Michihiko Aizawa , Katsuya Ebara , Hiroaki Yoda
发明人： Tomihisa Ohuchi , Akira Nishiguchi , Daisuke Hisajima , Seiichiro Sakaguchi , Yoshifumi Kunugi , Michihiko Aizawa , Katsuya Ebara , Hiroaki Yoda
IPC分类号： F25B15/00 , F25B15/06 , F25B37/00
CPC分类号： F25B15/06 , F25B15/008 , F25B37/00 , Y02B30/62
摘要： An absorption air conditioner having a regenerating chamber for heating and condensing a portion of a dilute solution generated in an absorber and an absorption chamber for causing refrigerant vapor generated in the regenerating chamber to be absorbed into said dilute solution which is at an intermediate position in the passage connected from the absorber to the regenerator so that the size of the absorber is reduced and the overall size of the absorption air conditioner is reduced.
摘要翻译：一种吸收式空调器，具有用于加热和冷凝在吸收器中产生的稀释溶液的一部分的再生室和用于使在再生室中产生的制冷剂蒸气的吸收室被吸收到位于所述再生室中的中间位置的所述稀释溶液中通道从吸收器连接到再生器，使得吸收器的尺寸减小，并且吸收空调的总体尺寸减小。

47. 发明授权

US09165585B2 Magnetoresistive element including a nitrogen-containing buffer layer 有权
标题翻译：磁阻元件包括含氮缓冲层
公开(公告)号：US09165585B2
公开(公告)日：2015-10-20
申请号：US13235237
申请日：2011-09-16
申请人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Kenji Noma , Hiroaki Yoda
发明人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Kenji Noma , Hiroaki Yoda
IPC分类号： G11C11/02 , G11B5/66 , G01R33/09 , H01F10/30 , G11C11/16
CPC分类号： H01L43/02 , G01R33/091 , G01R33/093 , G11B5/66 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/30 , H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化方向的记录层，具有不变磁化方向的参考层，设置在记录层和参考层之间的中间层，以及设置在记录层的表面上的第一缓冲层该记录层与设置有中间层的记录层的表面相对。记录层包括设置在中间层的侧面并且包含CoFe作为主要成分的第一磁性层和设置在第一缓冲层的侧面并且包含CoFe作为主要成分的第二磁性层，第一磁性层中的Fe浓度高于第二磁性层中的Fe浓度。第一缓冲层包含氮化合物。

48. 发明授权

US09130143B2 Magnetic memory and method for manufacturing the same 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US09130143B2
公开(公告)日：2015-09-08
申请号：US14201038
申请日：2014-03-07
申请人： Toshihiko Nagase , Daisuke Watanabe , Kazuya Sawada , Koji Ueda , Youngmin Eeh , Hiroaki Yoda
发明人： Toshihiko Nagase , Daisuke Watanabe , Kazuya Sawada , Koji Ueda , Youngmin Eeh , Hiroaki Yoda
IPC分类号： G11C11/16 , H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a magnetoresistive element provided on the substrate. The magnetoresistive element includes a first magnetic layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunneling barrier.
摘要翻译：根据一个实施例，公开了一种磁存储器。磁存储器包括衬底和设置在衬底上的磁阻元件。磁阻元件包括第一磁性层，第一磁性层上的隧道势垒层和隧道势垒层上的第二磁性层。第一磁性层或第二磁性层包括第一区域，第二区域和第三区域，其结晶部分的比例更接近隧道势垒。

49. 发明授权

US09018719B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US09018719B2
公开(公告)日：2015-04-28
申请号：US13424301
申请日：2012-03-19
申请人： Katsuya Nishiyama , Hisanori Aikawa , Tadashi Kai , Toshihiko Nagase , Koji Ueda , Hiroaki Yoda
发明人： Katsuya Nishiyama , Hisanori Aikawa , Tadashi Kai , Toshihiko Nagase , Koji Ueda , Hiroaki Yoda
IPC分类号： H01L29/82 , G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic layer between the storage layer and the reference layer, and a second nonmagnetic layer between the reference layer and the shift adjustment layer. A switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, and a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer.
摘要翻译：根据一个实施例，磁阻元件包括具有垂直和可变磁化的存储层，具有垂直和不变磁化的参考层，在与参考层的磁化相反的方向上具有垂直和不变磁化的位移调整层存储层和参考层之间的第一非磁性层，以及参考层和位移调整层之间的第二非磁性层。参考层的开关磁场等于或小于存储层的切换磁场，并且参考层的磁性松弛常数大于存储层的磁性松弛常数。

50. 发明授权

US08981507B2 Method for manufacturing nonvolatile memory device 有权
标题翻译：非易失性存储器件的制造方法
公开(公告)号：US08981507B2
公开(公告)日：2015-03-17
申请号：US13534673
申请日：2012-06-27
申请人： Shigeki Takahashi , Kyoichi Suguro , Junichi Ito , Yuichi Ohsawa , Hiroaki Yoda
发明人： Shigeki Takahashi , Kyoichi Suguro , Junichi Ito , Yuichi Ohsawa , Hiroaki Yoda
IPC分类号： H01L43/12
CPC分类号： H01L43/12
摘要： According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.
摘要翻译：根据一个实施例，公开了一种用于制造包括多个存储单元的非易失性存储器件的方法。多个存储单元中的每一个包括基底层，其包括第一电极，设置在基底层上的磁性隧道结器件和设置在磁性隧道结装置上的第二电极。磁隧道结装置包括第一磁性层，设置在第一磁性层上的隧道势垒层，以及设置在隧道势垒层上的第二磁性层。该方法可以包括通过将气体簇照射到第二磁性层的表面的一部分或第一磁性层的表面的一部分上来蚀刻第二磁性层的一部分和第一磁性层的一部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式