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41. 发明申请

US20070205439A1 IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM 审中-公开
标题翻译：图像拾取装置和图像拾取系统
公开(公告)号：US20070205439A1
公开(公告)日：2007-09-06
申请号：US11680742
申请日：2007-03-01
申请人： Akira Okita , Hiroki Hiyama , Ryuichi Mishima , Asako Ura
发明人： Akira Okita , Hiroki Hiyama , Ryuichi Mishima , Asako Ura
IPC分类号： H01L27/148
CPC分类号： H01L27/14632 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14645
摘要： An image pickup apparatus of the present invention includes a plurality of photoelectric conversion elements disposed on a semiconductor substrate, a multi-layer wiring structure including a plurality of interlayer insulation films disposed above the semiconductor substrate, and a passiation layer disposed above the multi-layer wiring structure. A first insulation layer is disposed below the under surface of the passiation layer; a second insulation layer is disposed above the top surface of the passiation layer; and the refractive indices of the passiation layer and the first insulation layer differ from each other, and the refractive indices of the passiation layer and the second insulation layer differ from each other. Moreover, planarization processing is performed to at least one layer of the interlayer insulation films and the first insulation layer. Furthermore, a first anti-reflection film is disposed between the passiation layer and the first insulation layer, and a second anti-reflection film is disposed between the passiation layer and the second insulation layer.
摘要翻译：本发明的图像拾取装置包括设置在半导体衬底上的多个光电转换元件，包括设置在半导体衬底之上的多个层间绝缘膜的多层布线结构，以及设置在多层上方的钝化层接线结构。第一绝缘层设置在被钝化层的下表面下方; 第二绝缘层设置在被钝化层的顶表面之上; 并且被照射层和第一绝缘层的折射率彼此不同，并且被照射层和第二绝缘层的折射率彼此不同。此外，对层间绝缘膜和第一绝缘层的至少一层进行平坦化处理。此外，第一防反射膜设置在被照射层和第一绝缘层之间，第二防反射膜设置在被照射层和第二绝缘层之间。

42. 发明申请

US20120288979A1 SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM 审中-公开
标题翻译：固态图像传感器和成像系统
公开(公告)号：US20120288979A1
公开(公告)日：2012-11-15
申请号：US13555355
申请日：2012-07-23
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

43. 发明申请

US20060049476A1 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US20060049476A1
公开(公告)日：2006-03-09
申请号：US11219007
申请日：2005-09-01
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L31/0232 , H01L31/00
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

44. 发明授权

US08866205B2 Photoelectric conversion device and image sensing 有权
标题翻译：光电转换装置和图像感测
公开(公告)号：US08866205B2
公开(公告)日：2014-10-21
申请号：US11844545
申请日：2007-08-24
申请人： Yasushi Nakata , Shigeru Nishimura , Ryuichi Mishima
发明人： Yasushi Nakata , Shigeru Nishimura , Ryuichi Mishima
IPC分类号： H01L31/062 , H01L27/146
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14636
摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.
摘要翻译：公开了一种光电转换装置。光电转换装置包括具有多个光电转换器的半导体衬底，布置在半导体衬底上的多层布线结构以及布置在多层布线结构上的平坦化层。多层布线结构包括第一布线层，布置成覆盖第一布线层的层间绝缘膜和布置在层间绝缘膜上的用作顶部布线层的第二布线层。平坦化层覆盖层间绝缘膜和第二布线层。第二布线层比第一布线层薄。

45. 发明申请

US20100221864A1 SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM 有权
标题翻译：固态图像传感器和成像系统
公开(公告)号：US20100221864A1
公开(公告)日：2010-09-02
申请号：US12780811
申请日：2010-05-14
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

46. 发明授权

US07205523B2 Solid state image pickup device, method of manufacturing the same, and camera 失效
标题翻译：固态图像拾取装置，其制造方法和相机
公开(公告)号：US07205523B2
公开(公告)日：2007-04-17
申请号：US11369819
申请日：2006-03-08
申请人： Ryuichi Mishima , Seiichi Tamura , Koichi Tazoe
发明人： Ryuichi Mishima , Seiichi Tamura , Koichi Tazoe
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/14601 , H04N5/35581 , H04N5/37452 , H04N5/378
摘要： The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photoelectric conversion region during the photoelectric conversion region generates and accumulates carrier; a source follower amplifier SF-MOS for amplifying carrier; a transfer MOS transistor Tx-MOS for transferring the carrier accumulated in the photoelectric conversion region to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS for transferring the carrier accumulated in the carrier holding region to the source follower amplifier SF-MOS. The carrier holding region is formed so as to have a trench structure.
摘要翻译：固态摄像装置包括像素，该像素包括：光电转换区域，用于通过光电转换产生载体并累积载体; 载流子保持区域，用于在光电转换区域产生并积累载流子的同时积聚从光电转换区域流出的载流子; 用于放大载波的源极跟随器放大器SF-MOS; 用于将积累在光电转换区域中的载流子传送到源极跟随器放大器SF-MOS的转移MOS晶体管Tx-MOS; 以及用于将载波保持区域中累积的载波传送到源极跟随器放大器SF-MOS的转移MOS晶体管Ty-MOS。载流子保持区域形成为具有沟槽结构。

47. 发明授权

US08252614B2 Solid-state image sensor and imaging system 有权
标题翻译：固态图像传感器及成像系统
公开(公告)号：US08252614B2
公开(公告)日：2012-08-28
申请号：US12780811
申请日：2010-05-14
申请人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
发明人： Toru Koizumi , Akira Okita , Tetsuya Itano , Sakae Hashimoto , Ryuichi Mishima
IPC分类号： H01L21/00 , H01L21/4763
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14643
摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.
摘要翻译：至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

48. 发明申请

US20080054388A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGE SENSING SYSTEM 有权
标题翻译：光电转换装置和图像感测系统
公开(公告)号：US20080054388A1
公开(公告)日：2008-03-06
申请号：US11844545
申请日：2007-08-24
申请人： Yasushi Nakata , Shigeru Nishimura , Ryuichi Mishima
发明人： Yasushi Nakata , Shigeru Nishimura , Ryuichi Mishima
IPC分类号： H01L31/0232 , H01L31/0216
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14636
摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.
摘要翻译：公开了一种光电转换装置。光电转换装置包括具有多个光电转换器的半导体衬底，布置在半导体衬底上的多层布线结构以及布置在多层布线结构上的平坦化层。多层布线结构包括第一布线层，布置成覆盖第一布线层的层间绝缘膜和布置在层间绝缘膜上的用作顶部布线层的第二布线层。平坦化层覆盖层间绝缘膜和第二布线层。第二布线层比第一布线层薄。

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