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41. 发明授权

US4783368A High heat conductive insulated substrate and method of manufacturing the same 失效
标题翻译：高导热绝缘基板及其制造方法
公开(公告)号：US4783368A
公开(公告)日：1988-11-08
申请号：US927211
申请日：1986-11-05
申请人： Kenji Yamamoto , Takehisa Nakayama , Yoshihisa Tawada
发明人： Kenji Yamamoto , Takehisa Nakayama , Yoshihisa Tawada
IPC分类号： H01L21/48 , H01L23/14 , H01L23/373 , H05K1/05 , B32B9/04 , B32B7/00
CPC分类号： H01L23/147 , H01L21/4803 , H01L23/142 , H01L23/3732 , H01L2924/0002 , H05K1/053 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： An insulated substrate having high thermal conductivity comprising a substrate having a thermal conductivity of not less than 50 W/m.k., and an insulating layer having high thermal conductivity coated on the substrate; and a method of producing the insulated substrate characterized in that an insulating layer is formed on a substrate by applying DC voltage and RF power to the substrate and providing a magnetic field parallel to the surface of the substrate.The insulated substrate has good heat conductivity, thermal resistance and smooth surface, whereby exfoliation can be prevented.
摘要翻译：一种具有高导热性的绝缘基板，其具有热传导率为50W / m·k以上的基板，在基板上涂布具有高导热性的绝缘层; 以及一种制造绝缘基板的方法，其特征在于，通过向基板施加直流电压和RF功率并提供平行于基板的表面的磁场，在基板上形成绝缘层。绝缘基板具有良好的导热性，耐热性和光滑表面，从而可以防止剥离。

42. 发明授权

US4499331A Amorphous semiconductor and amorphous silicon photovoltaic device 失效
标题翻译：非晶半导体和非晶硅光伏器件
公开(公告)号：US4499331A
公开(公告)日：1985-02-12
申请号：US552951
申请日：1983-11-17
申请人： Yoshihiro Hamakawa , Yoshihisa Tawada
发明人： Yoshihiro Hamakawa , Yoshihisa Tawada
IPC分类号： H01L31/0224 , H01L31/0376 , H01L31/075 , H01L31/20 , H01L31/04
CPC分类号： H01L31/202 , H01L31/022466 , H01L31/0376 , H01L31/075 , H01L31/20 , Y02E10/548 , Y02P70/521 , Y10S420/903
摘要： An amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a two-layer film structure of ITO and SnO.sub.2 as a transparent electrode for the photovoltaic device, with the SnO.sub.2 layer contacting the P or N layer. The improvement is particularly marked in the case of heterojunction photovoltaic devices.

43. 发明授权

US4450316A Amorphous silicon photovoltaic device having two-layer transparent electrode 失效
标题翻译：具有双层透明电极的非晶硅光伏器件
公开(公告)号：US4450316A
公开(公告)日：1984-05-22
申请号：US399312
申请日：1982-07-19
申请人： Yoshihiro Hamakawa , Yoshihisa Tawada
发明人： Yoshihiro Hamakawa , Yoshihisa Tawada
IPC分类号： H01L31/0224 , H01L31/0376 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/202 , H01L31/022466 , H01L31/0376 , H01L31/075 , H01L31/20 , Y02E10/548 , Y02P70/521 , Y10S420/903
摘要： An amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a two-layer film structure of ITO and SnO.sub.2 as a transparent electrode for the photovoltaic device, with the SnO.sub.2 layer contacting the P or N layer. The improvement is particularly marked in the case of heterojunction photovoltaic devices.

44. 发明授权

US4433097A Vinyl chloride resin talc-embedded composition and method of manufacturing same 失效
标题翻译：氯乙烯树脂滑石嵌入组合物及其制造方法
公开(公告)号：US4433097A
公开(公告)日：1984-02-21
申请号：US226784
申请日：1981-01-21
申请人： Yoshihisa Tawada , Tetsuro Yamamoto , Minoru Ushioda , Kazuo Saito
发明人： Yoshihisa Tawada , Tetsuro Yamamoto , Minoru Ushioda , Kazuo Saito
IPC分类号： C08F2/44 , C08F14/06 , C08K3/34 , C08L27/06
CPC分类号： C08F14/06
摘要： Composition and method of manufacturing same, wherein a vinyl chloride resin has talc therein in direct contact with vinyl chloride based polymer particles without any intervening material therebetween.
摘要翻译：组合物及其制造方法，其中氯乙烯树脂在其中与氯乙烯基聚合物颗粒直接接触的滑石，其间没有任何介入材料。

45. 发明申请

US20120126206A1 ORGANIC SEMICONDUCTOR DEVICE 有权
标题翻译：有机半导体器件
公开(公告)号：US20120126206A1
公开(公告)日：2012-05-24
申请号：US13131003
申请日：2009-11-25
申请人： Yasushi Morita , Masaaki Yokoyama , Shozo Yanagida , Yoshihisa Tawada , Kenji Yamamoto , Ryotaro Tsuji
发明人： Yasushi Morita , Masaaki Yokoyama , Shozo Yanagida , Yoshihisa Tawada , Kenji Yamamoto , Ryotaro Tsuji
IPC分类号： H01L51/30
CPC分类号： H01L51/0056 , H01L51/424 , H01L51/5012 , H01L51/5048 , H01L51/5088 , Y02E10/549 , Y10S428/917
摘要： An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.
摘要翻译：根据本发明的有机半导体器件包括插入在两个电极12和15之间的半导体层14，并且半导体层14包含作为半导体材料的作为中性自由基化合物的三氧化三三烯（TOT）衍生物。半导体层14用作n型半导体并与p型半导体层13共同显示光电转换效果。有机半导体器件的特征在于包括具有窄带隙的半导体层，在红外区域具有光吸收性能，并且载流子迁移率高。

46. 发明授权

US4804608A Amorphous silicon photoreceptor for electrophotography 失效
标题翻译：用于电子照相的非晶硅感光体
公开(公告)号：US4804608A
公开(公告)日：1989-02-14
申请号：US129346
申请日：1987-11-22
申请人： Yoshihisa Tawada
发明人： Yoshihisa Tawada
IPC分类号： G03G5/04 , G03G5/08 , G03G5/082
CPC分类号： G03G5/08228 , G03G5/08
摘要： A photoreceptor for electrophotography which comprises an electroconductive substrate and a photoconductive layer formed thereon, said photoconductive layer essentially consisting of a thin film of amorphous silicon alloy containing at least one of hydrogen and fluorine and having the formula: a-Si.sub.1-m X.sub.m :Y wherein X is C, N or O, Y is at least one of H and F and m is a number of not less than zero and less than one, m being gradually decreased from the top surface of the photoconductive layer to the middle part of the photoconductive layer and gradually increased from the middle part of the photoconductive layer to the interface of the photoconductive layer with the electroconductive substrate in the direction of thickness, said photoreceptor having good electric charging property and photoconductivity characteristics.
摘要翻译：一种用于电子照相的感光体，其包括导电基底和形成在其上的光电导层，所述光电导层基本上由含有氢和氟中至少一个的非晶硅合金薄膜组成，具有下式：a-Si1-mXm：Y，其中 X是C，N或O，Y是H和F中的至少一个，m是不小于零且小于1的数，m从光电导层的顶表面逐渐减小到光电导层从光电导层的中间部分逐渐增加到光电导层与导电基片在厚度方向上的界面，所述感光体具有良好的充电性能和光导特性。

47. 发明授权

US4664890A Glow-discharge decomposition apparatus 失效
标题翻译：辉光放电分解装置
公开(公告)号：US4664890A
公开(公告)日：1987-05-12
申请号：US746693
申请日：1985-06-20
申请人： Yoshihisa Tawada , Takehisa Nakayama , Masahiko Tai , Nozomu Ikuchi
发明人： Yoshihisa Tawada , Takehisa Nakayama , Masahiko Tai , Nozomu Ikuchi
IPC分类号： H01L21/20 , B09C1/02 , C23C16/509 , H01J37/32 , B01J19/08
CPC分类号： H01J37/32174 , B09C1/02 , C23C16/509 , H01J37/32082 , Y10S422/907
摘要： A glow-discharge decomposition apparatus comprises ground electrodes, substrates, RF-electrodes, a RF-power supply, a matching circuit and a controlling circuit having at least one electric element. Each of the substrates is provided on the ground electrodes which are placed over each of the RF-electrodes in parallel to each other. Each of the RF-electrodes standing in parallel are electrically insulated to each other. The matching circuit is connected to accept a RF-power from the RF-power supply. The controlling circuit is connected to accept a RF-power from the matching circuit. The outputs of the controlling circuit are connected to supply RF-powers to the RF-electrodes. The films are fabricated on the substrates by supplying RF-powers being independently controlled via the controlling circuit, thereby plasmas are controlled over each of the RF-electrodes. Thus, deposition rates are individually controlled and uniform films are fabricated on each of the substrates.
摘要翻译：辉光放电分解装置包括接地电极，基板，RF电极，RF电源，匹配电路和具有至少一个电气元件的控制电路。每个基板设置在彼此平行地放置在每个RF电极上的接地电极上。平行站立的每个RF电极彼此电绝缘。匹配电路被连接以接收来自RF电源的RF功率。控制电路被连接以接受来自匹配电路的RF功率。控制电路的输出被连接以向RF电极提供RF功率。通过提供通过控制电路独立控制的RF功率，在衬底上制造膜，从而在每个RF电极上控制等离子体。因此，分别控制沉积速率，并且在每个基板上制造均匀的膜。

48. 发明授权

US4385200A Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon 失效
公开(公告)号：US4385200A
公开(公告)日：1983-05-24
申请号：US420711
申请日：1982-09-21
申请人： Yoshihiro Hamakawa , Yoshihisa Tawada
发明人： Yoshihiro Hamakawa , Yoshihisa Tawada
IPC分类号： H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/202 , H01L31/075 , H01L31/20 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic cell having a hetero junction of amorphous silicon and amorphous silicon carbide has at least one of its p and n layers composed of amorphous silicon carbide of the general formula a-Si.sub.1-x C.sub.x obtained by glow discharge decomposition of a mixture of at least one gas selected from among silane, silicon fluoride and the derivatives thereof, and at least one gas selected from among hydrocarbons, alkylsilanes, the fluorides thereof and the derivatives thereof.

49. 发明授权

US08933437B2 Organic semiconductor material with neutral radical compound of a trioxotriangulene derivative as a semiconductor material 有权
标题翻译：具有作为半导体材料的三氧三三烯衍生物的中性自由基化合物的有机半导体器件
公开(公告)号：US08933437B2
公开(公告)日：2015-01-13
申请号：US13131003
申请日：2009-11-25
申请人： Yasushi Morita , Masaaki Yokoyama , Shozo Yanagida , Yoshihisa Tawada , Kenji Yamamoto , Ryotaro Tsuji
发明人： Yasushi Morita , Masaaki Yokoyama , Shozo Yanagida , Yoshihisa Tawada , Kenji Yamamoto , Ryotaro Tsuji
IPC分类号： H01L51/30 , H01L51/00 , H01L51/42 , H01L51/50
CPC分类号： H01L51/0056 , H01L51/424 , H01L51/5012 , H01L51/5048 , H01L51/5088 , Y02E10/549 , Y10S428/917
摘要： An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.
摘要翻译：根据本发明的有机半导体器件包括插入在两个电极12和15之间的半导体层14，并且半导体层14包含作为半导体材料的作为中性自由基化合物的三氧化三三烯（TOT）衍生物。半导体层14用作n型半导体并与p型半导体层13共同显示光电转换效果。有机半导体器件的特征在于包括具有窄带隙的半导体层，在红外区域具有光吸收性能，并且载流子迁移率高。

50. 发明授权

US5250120A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5250120A
公开(公告)日：1993-10-05
申请号：US802996
申请日：1991-12-05
申请人： Jun Takada , Akihiko Nakajima , Katsuhiko Hayashi , Keizo Asaoka , Yoshihisa Tawada
发明人： Jun Takada , Akihiko Nakajima , Katsuhiko Hayashi , Keizo Asaoka , Yoshihisa Tawada
IPC分类号： H01L31/10 , H01L31/0224 , H01L31/04 , H01L31/075 , H01L31/0376
CPC分类号： H01L31/022425 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： This invention relates to a photovoltaic device, such as a solar cell or a photosensor, which comprises an amorphous silicon semiconductor photosensitive layer and, as disposed on respective sides thereof, a transparent electrode and a rear electrode. The rear electrode is a multi-layer structure constructed by alternately successive depositions, each in a thickness of 0.3 to 50 nm, of two or more metals selected from the group consisting of Cu, Ag, and Au. In using such a Cu/Ag multi-layer structure or an Au/Ag multi-layer structure as the rear electrode, the thickness of each Cu or Au layer is controlled at 0.3 to 20 nm and that of each Ag layer at 1 to 50 nm. The total thickness of the rear electrode is 20 nm to 1 .mu.m. This construction insures improved photoelectric conversion efficiency and improved reliability of the device.
摘要翻译：本发明涉及一种太阳能电池或光电传感器的光电器件，其包括非晶硅半导体感光层，并且在其两侧设置透明电极和后电极。后电极是通过交替连续沉积而构成的多层结构，每个沉积厚度为0.3至50nm，两种或更多种选自Cu，Ag和Au的金属。在使用这种Cu / Ag多层结构或Au / Ag多层结构作为后电极时，每个Cu或Au层的厚度被控制在0.3至20nm，每个Ag层的厚度控制在1至50nm nm。背面电极的总厚度为20nm〜1μm。这种结构确保改善光电转换效率并提高器件的可靠性。

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