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41. 发明授权

US5725788A Apparatus and method for patterning a surface 失效
标题翻译：用于图案化表面的装置和方法
公开(公告)号：US5725788A
公开(公告)日：1998-03-10
申请号：US608022
申请日：1996-03-04
申请人： George N. Maracas , Ronald N. Legge , Herbert Goronkin , Lawrence N. Dworsky
发明人： George N. Maracas , Ronald N. Legge , Herbert Goronkin , Lawrence N. Dworsky
IPC分类号： H01L21/302 , B05D1/18 , B05D1/28 , G03F7/00 , G03F7/16 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/308 , B44C1/22
CPC分类号： B82Y30/00 , B05D1/185 , B05D1/28 , B05D1/283 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/161 , H01L21/0331 , H01L21/0337 , H01L21/3081
摘要： An apparatus (95) and method for patterning a surface of an article (30), the apparatus (95) including a large-area stamp (50) for forming a self-assembled monolayer (36) (SAM) of a molecular species (38) on the surface (34) of a layer (32) of resist material, which is formed on the surface of the article (30). The large-area stamp (50) includes a layer (52) of an elastomer and has, embedded within it, mechanical structures (68, 80) which stiffen the large-area stamp (50) and deform it to control the stamped patterns. The method includes the steps of: forming a layer (32) of resist material is on the surface of the article (30), utilizing the large-area stamp (50) to form the SAM (36) on the surface (34) of the layer (32) of resist material, etching the layer (32) of resist material, and thereafter etching or plating the surface of the article (30).
摘要翻译：一种用于对制品（30）的表面进行图案化的装置（95）和方法，所述装置（95）包括用于形成分子种类的自组装单层（36）（SAM）的大面积印模（50） 38）形成在制品（30）的表面上的抗蚀剂材料层（32）的表面（34）上。大面积邮票（50）包括弹性体层（52），并且内嵌有机械结构（68,80），其加强大面积印模（50）并使其变形以控制冲压图案。该方法包括以下步骤：在制品（30）的表面上形成抗蚀剂材料层（32），利用大面积印模（50）在表面（34）上形成SAM（36）抗蚀剂材料层（32），蚀刻抗蚀剂材料层（32），然后蚀刻或电镀制品（30）的表面。

42. 发明授权

US5552330A Resonant tunneling fet and methods of fabrication 失效
标题翻译：谐振隧道和制造方法
公开(公告)号：US5552330A
公开(公告)日：1996-09-03
申请号：US386171
申请日：1995-02-09
申请人： Saied N. Tehrani , Herbert Goronkin , Jun Shen , Xiaodong T. Zhu
发明人： Saied N. Tehrani , Herbert Goronkin , Jun Shen , Xiaodong T. Zhu
IPC分类号： H01L29/68 , H01L21/20 , H01L21/334 , H01L27/06 , H01L29/205 , H01L29/76 , H01L21/265 , H01L21/44
CPC分类号： B82Y30/00 , B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L27/0605 , H01L29/66939 , H01L29/7606
摘要： A resonant tunneling FET including a heterostructure FET with a channel layer having a first current contact and a control contact operatively coupled thereto and a resonant tunneling device, including a quantum well layer sandwiched between barrier layers with a resonant tunneling layer affixed to an opposite side of one barrier layer, operably affixed to the heterostructure FET to form a second current contact. The resonant tunneling FET being constructed from a material system which allows the fabrication of additional devices on the same substrate.
摘要翻译：一种谐振隧穿FET，其包括具有第一电流接触的通道层和可操作地耦合到其上的控制触点的异质结构FET，以及谐振隧穿装置，其包括夹在阻挡层之间的量子阱层，其中谐振隧穿层固定在一个阻挡层，可操作地固定到异质结构FET以形成第二电流接触。谐振隧道FET由材料系统构成，其允许在同一衬底上制造附加器件。

43. 发明授权

US5489785A Band-to-band resonant tunneling transistor 失效
标题翻译：带对带谐振隧道晶体管
公开(公告)号：US5489785A
公开(公告)日：1996-02-06
申请号：US209789
申请日：1994-03-11
申请人： Saied N. Tehrani , Jun Shen , Herbert Goronkin , Xiaodong T. Zhu
发明人： Saied N. Tehrani , Jun Shen , Herbert Goronkin , Xiaodong T. Zhu
IPC分类号： H01L29/68 , H01L29/06 , H01L29/205 , H01L29/737 , H01L27/12
CPC分类号： H01L29/7376 , B82Y10/00
摘要： A band-to-band resonant tunneling transistor including GaSb and InAs resonant tunneling layers separated by a thin barrier layer and a second InAs layer separated from the GaSb layer by another thin barrier layer. A terminal on the InAs resonant tunneling layer and a terminal on the second InAs layer. Leakage current reduction layers are positioned on the second InAs layer with a bias terminal positioned thereon. The InAs resonant tunneling layer has a plurality of quantized states which are misaligned with the ground state of the GaSb layer in a quiescent state, each of the quantized states of the InAs resonant tunneling layer are movable into alignment with the ground state of the GaSb layer to provide current flow through the transistor with the application of a specific potential to the terminal on the second InAs layer.
摘要翻译：包括GaSb和InAs谐振隧道层的带对带谐振隧穿晶体管，其由薄的阻挡层和由另一个薄的阻挡层与GaSb层分离的第二InAs层隔开。 InAs谐振隧穿层上的一个端子和第二个InAs层上的一个端子。漏电流减少层位于第二InAs层上，偏置端子位于其上。 InAs谐振隧穿层具有与处于静止状态的GaSb层的基态不对准的多个量化状态，InAs谐振隧穿层的每个量子化状态可移动地与GaSb层的基态对准以通过向第二InAs层上的端子施加特定电位来提供流过晶体管的电流。

44. 发明授权

US5442192A Heterostructure electron emitter utilizing a quantum well 失效
标题翻译：异质结电子发射体利用量子阱
公开(公告)号：US5442192A
公开(公告)日：1995-08-15
申请号：US187258
申请日：1994-01-27
申请人： Herbert Goronkin , Lawrence N. Dworsky
发明人： Herbert Goronkin , Lawrence N. Dworsky
IPC分类号： H01J1/308 , H01L27/14 , H01L29/161
CPC分类号： H01J1/308
摘要： A heterostructure electron emitter including a substrate having a surface with a predetermined potential barrier and a quantum well formed in the substrate adjacent the surface. Contacts are positioned on the substrate for coupling free electrons to the substrate and into the quantum well. An acoustic wave device is positioned on the substrate so as to direct acoustic waves to strike the free electrons in the quantum well and excite the free electrons sufficiently to cause the free electrons to overcome the potential barrier and to be emitted from the surface of the substrate.
摘要翻译：异质结构电子发射体包括具有预定势垒的表面的衬底和与衬底相邻的表面形成的量子阱。触点位于衬底上，用于将自由电子耦合到衬底并进入量子阱。声波器件位于衬底上，以引导声波冲击量子阱中的自由电子，并充分激发自由电子，使自由电子克服势垒并从衬底的表面发射。

45. 发明授权

US5427965A Method of fabricating a complementary heterojunction FET 失效
标题翻译：制造互补异质结FET的方法
公开(公告)号：US5427965A
公开(公告)日：1995-06-27
申请号：US262292
申请日：1994-06-20
申请人： Saied N. Tehrani , X. T. Zhu , Herbert Goronkin , Jun Shen
发明人： Saied N. Tehrani , X. T. Zhu , Herbert Goronkin , Jun Shen
IPC分类号： H01L29/80 , H01L27/06 , H01L27/092 , H01L27/095 , H01L21/265 , H01L21/20
CPC分类号： H01L27/0605 , H01L27/092 , Y10S148/015 , Y10S148/072 , Y10S148/16
摘要： A heterojunction device including a first semiconductive layer on a substrate, a barrier layer on the first layer, a second semiconductive layer on the barrier layer and a multi-layer cap, on the second semiconductive layer. First and second gates positioned on layers of the cap to define first and second transistors, with the cap layers being selected and etched to pin the Fermi level in a first transistor conduction channel in the second semiconductive layer such that the number of carriers in the first conduction channel are substantially less than the number of carriers in surrounding portions of the second semiconductive layer and the Fermi level in a second transistor conduction channel in the first semiconductive layer such that the number of carriers in the second conduction channel are substantially less than the number of carriers in surrounding portions of the first semiconductive layer.
摘要翻译：一种异质结装置，在第二半导体层上包括衬底上的第一半导体层，第一层上的阻挡层，阻挡层上的第二半导体层和多层帽。位于盖的层上的第一和第二栅极限定第一和第二晶体管，其中盖层被选择和蚀刻以在第二半导体层中的第一晶体管导通通道中引导费米能级，使得第一和第二晶体管中的载流子数目传导通道基本上小于第一半导体层中的第二半导体层的周围部分中的载流子数量和第二晶体管传导通道中的费米能级数，使得第二导电通道中的载流子数目基本上小于数量在第一半导体层的周围部分的载体。

46. 发明授权

US5410160A Interband tunneling field effect transistor 失效
标题翻译：带间隧道场效应晶体管
公开(公告)号：US5410160A
公开(公告)日：1995-04-25
申请号：US894963
申请日：1992-06-08
申请人： Herbert Goronkin , Jun Shen , Saied N. Tehrani , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied N. Tehrani , X. Theodore Zhu
IPC分类号： H01L29/80 , H01L29/739 , H01L29/772 , H01L29/161 , H01L29/205 , H01L29/225
CPC分类号： H01L29/772 , H01L29/739
摘要： A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a P-type drain region (22b). Each channel is also coupled to an N-type source region (25b). With appropriate gate bias on a gate electrode (17), quantized energy levels in the channels (12, 14, 16) are aligned providing peak current flow by electrons tunneling from the conduction band of one or more N-channels (12, 16) to the valence band of the P-channel (14).
摘要翻译：提供了具有由包括宽带隙材料（18）的阻挡层分开的多个垂直堆叠通道（12,14,16）的场效应半导体器件。通道（12,14,16）形成在宽带隙缓冲层（11）上，每个通道耦合有P型漏极区域（22b）。每个通道也耦合到N型源极区域（25b）。在栅电极（17）上具有适当的栅极偏置，通道（12,14,16）中的量化能级对齐，从一个或多个N沟道（12,16）的导带隧穿的电子提供峰值电流，到P沟道（14）的价带。

47. 发明授权

US5298441A Method of making high transconductance heterostructure field effect transistor 失效
标题翻译：制造高跨导异质结场场效应晶体管的方法
公开(公告)号：US5298441A
公开(公告)日：1994-03-29
申请号：US709741
申请日：1991-06-03
申请人： Herbert Goronkin , Jun Shen , Saied N. Tehrani , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied N. Tehrani , X. Theodore Zhu
IPC分类号： H01L29/772 , H01L21/265
CPC分类号： H01L29/7725 , Y10S148/097
摘要： A high transconductance HFET (21) utilizes nonalloy semiconductor materials (26) to form a strained channel layer (26) that has a deep quantum well (38). The materials utilized for layers adjacent to the channel layer (26) apply strain to the channel layer (26) and create an excess of high mobility carriers in the channel layer (26). The materials also form a deep quantum well (38) that confines the high mobility carriers to the channel (26). The high mobility carriers and the high confinement provide an HFET (21) that has high transconductance, high frequency response, and sharp pinch-off characteristics.
摘要翻译：高跨导HFET（21）利用非合金半导体材料（26）形成具有深量子阱（38）的应变通道层（26）。用于与沟道层（26）相邻的层的材料对沟道层（26）施加应变，并在沟道层（26）中产生过量的高迁移率载流子。这些材料还形成将高迁移率载流子限制到通道（26）的深量子阱（38）。高迁移率载流子和高限制性提供了具有高跨导，高频响应和清晰夹断特性的HFET（21）。

48. 发明授权

US5221849A Semiconductor device with active quantum well gate 失效
标题翻译：具有有源量子阱栅的半导体器件
公开(公告)号：US5221849A
公开(公告)日：1993-06-22
申请号：US899439
申请日：1992-06-16
申请人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied Tehrani , X. Theodore Zhu
IPC分类号： H01L29/80 , H01L27/06 , H01L29/10 , H01L29/772
CPC分类号： H01L27/0605 , H01L29/1029 , H01L29/772
摘要： A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by independent gate electrodes (13, 15) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a drain electrode (21). Each channel is also coupled to a source electrode (25-26). The quantum well channels (12, 14, 16) and quantum well gates (13, 15) are separated from each other by barrier layers (18) of a wide bandgap semiconductor material.
摘要翻译：提供具有由独立的栅电极（13,15）分离的多个垂直堆叠的通道（12,14,16）的场效半导体器件。通道（12,14,16）形成在宽带隙缓冲层（11）上，每个通道与漏电极（21）相连。每个通道也耦合到源电极（25-26）。量子阱通道（12,14,16）和量子阱栅极（13,15）通过宽带隙半导体材料的阻挡层（18）彼此分离。

49. 发明授权

US5007873A Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process 失效
标题翻译：具有由基本上正常的气相沉积工艺形成的发射极的非平面场致发射器件
公开(公告)号：US5007873A
公开(公告)日：1991-04-16
申请号：US477694
申请日：1990-02-09
申请人： Herbert Goronkin , Robert C. Kane
发明人： Herbert Goronkin , Robert C. Kane
IPC分类号： H01J1/304 , H01J9/02
CPC分类号： H01J3/022 , H01J1/3042 , H01J9/025
摘要： A cold cathode field emission device having a cone shaped emitter (112, 208) formed with a substantially normal (but not absolutely normal) vapor deposition process (109) wherein the substrate (101, 201) need not be rotated with respect to the vapor deposition target. The vapor deposition process forms an encapsulating layer (111, 207) that can either be utilized as an electrode within the completed device, or that can be removed to allow subsequent construction of additional layers.
摘要翻译：一种冷阴极场致发射器件，其具有形成有基本上正常（但不是绝对正常）的气相沉积工艺（109）的锥形发射器（112,208），其中衬底（101,201）不需要相对于蒸汽旋转沉积目标。气相沉积工艺形成一个封装层（111,207），该封装层可以在完成的器件中用作电极，也可以被去除以允许随后构造另外的层。

50. 发明授权

US4769683A Superlattice gate field effect transistor 失效
标题翻译：超晶格栅场效应晶体管
公开(公告)号：US4769683A
公开(公告)日：1988-09-06
申请号：US64629
申请日：1987-06-22
申请人： Herbert Goronkin , George N. Maracas , Richard Nguyen
发明人： Herbert Goronkin , George N. Maracas , Richard Nguyen
IPC分类号： H01L29/423 , H01L29/775 , H01L27/12
CPC分类号： B82Y10/00 , H01L29/42316 , H01L29/775
摘要： A quasi 1-dimensional electron gas transistor has been provided having a source electrode and a drain electrode. A plurality of electrodes are positioned between the source and drain electrodes in a manner which are parallel to the electron flow between the source and the drain electrodes. In one embodiment, the electrodes are interconnected by a gate electrode while in an alternate embodiment all the electrodes are connected to the source electrode and insulated from the gate electrode. This device provides a quantum wire for quasi 1-dimensional electron flow.
摘要翻译：已经提供了具有源电极和漏电极的准一维电子气体晶体管。以与源极和漏极之间的电子流平行的方式将多个电极定位在源极和漏极之间。在一个实施例中，电极通过栅电极互连，而在替代实施例中，所有电极都连接到源电极并与栅电极绝缘。该器件为准1维电子流提供量子线。

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