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41. 发明专利

JPS61105873A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS61105873A
公开(公告)日：1986-05-23
申请号：JP22005985
申请日：1985-10-04
申请人： Hitachi Ltd
发明人： KAMIGAKI YOSHIAKI , ITO KIYOO , ONISHI SHINJI , YOSHIDA ISAO , MASUDA HIROO , KOIKE JUNICHI
IPC分类号： H01L21/265 , H01L29/78
CPC分类号： H01L29/78
摘要： PURPOSE:To obtain a semiconductor device in a high-withstand voltage structure by a method wherein the high-concentration impurity region constituting the drain region is formed by the mask away from the gate electrode compared to the low= concentration impurity region. CONSTITUTION:An oxide film is formed on a substrate 1 by performing a thermal oxidation and after a 4,000-Angstrom thick polycrystalline silicon layer, wherein phosphorus is contained in high concentration, is desposited thereon, a gate insulating film 3 and a gate electrode 4 are formed. After that, a thermal oxidation is performed and phosphorus is ion-implanted in the substrate 1 as wide as 2X10 cm through oxide films 8-1 and 8-2, which are formed at the time of the foregoing thermal oxidation, and ion-implanted layers 5-1 and 5-2 are formed. Subsequently, wet and dry thermal oxidation are performed and 210-Angstrom thick oxide films 6-1 and 6-3 are formed on the substrate. At this time, a 3,000-Angstrom thick oxide film 6-2 is formed on the periphery of the electrode 4, because an impurity, phosphorus, is being contained in the polycrystalline silicon layer in high concentration. After then, arsenic is ion-implanted as wide as 6mu10 cm . After that, a thermal treatment is performed and phosphorus impurity layers 5-1 and 5-2 and arsenic impurity layers 7-1 and 7-2 are formed as the final diffusion layers.
摘要翻译：目的：为了通过以下方法获得高耐压结构的半导体器件：与低浓度杂质区相比，构成漏极区的高浓度杂质区由掩模形成，远离栅电极。构成：通过进行热氧化在基板1上形成氧化膜，在其上分布有高浓度磷的4,000埃厚的多晶硅层之后，栅极绝缘膜3和栅电极4为形成。之后，通过在上述时刻形成的氧化膜8-1和8-2，进行热氧化，并将磷离子注入到宽度为2×10 13 cm -2的衬底1中形成热氧化和离子注入层5-1和5-2。随后，进行湿干和干热氧化，并在衬底上形成210埃厚的氧化膜6-1和6-3。此时，由于在多晶硅层中含有高浓度的杂质，因此在电极4的周围形成有3,000埃厚的氧化膜6-2。之后，将砷离子注入到6mu10·15cm -2以上。之后，进行热处理，并且形成磷杂质层5-1和5-2以及砷杂质层7-1和7-2作为最终扩散层。

42. 发明专利

JPS60140593A DECODER CIRCUIT 失效
公开(公告)号：JPS60140593A
公开(公告)日：1985-07-25
申请号：JP24693583
申请日：1983-12-28
申请人： HITACHI LTD
发明人： HONMA NORIYUKI , NANBU HIROAKI , YOSHIDA ISAO , HIGUCHI HISAYUKI , YAMAGUCHI KUNIHIKO
IPC分类号： G11C11/413 , G11C11/34 , H03K17/60 , H03K17/62
摘要： PURPOSE:To prevent shunt occurrence between transistors of an emitter follower and a selection decoder by making a regular direction voltage between a decoder and the base emitter of a transistor larger than the base emitter voltage of the emitter follower and the transistor. CONSTITUTION:A regular direction voltage VF of a diode is made larger than the VBE of QE1 and QE2. Stray capacity on the diode positive electrode side is made smaller because of high speed of a decoder circuit. Since the stray capacity is formed on a diode insulation film, it is small, and saturation charge is restored earlier because of early recombination of the carrier. Therefore, it is suitable for a high-speed circuit. Two Schottky barriers are connected in serial and the VF which is larger than the VBE is formed. For the SBD, the value is extremely small since there is only stray capacity between the wiring and the semiconductor base plate on the positive electrode, and the decoder circuit with remarkably high speed can be constituted since a small amount of charge is not accumulated.

43. 发明专利

JPS605228B2 失效
公开(公告)号：JPS605228B2
公开(公告)日：1985-02-08
申请号：JP12347577
申请日：1977-10-17
申请人： HITACHI LTD
发明人： OKABE TAKEAKI , YOSHIDA ISAO , OCHI SHIKAYUKI , NAGATA MINORU
IPC分类号： H01L29/10 , H01L29/417 , H01L29/78

44. 发明专利

JPS5969393A Hoist 失效
公开(公告)号：JPS5969393A
公开(公告)日：1984-04-19
申请号：JP17458282
申请日：1982-10-06
申请人： Hitachi Ltd
发明人： SATOU ISAO , NISHINO SHIGERU , YOSHIDA ISAO , SUZUKI SHIYOUZOU , SUZUKI TATSU
IPC分类号： B66D3/20 , B66D3/26

45. 发明专利

JPS5947766A Insulated gate type semiconducor device and manufacture thereof 失效
标题翻译：绝缘栅型半导体器件及其制造
公开(公告)号：JPS5947766A
公开(公告)日：1984-03-17
申请号：JP15665582
申请日：1982-09-10
申请人： Hitachi Ltd
发明人： OOTAKA SHIGEO , YOSHIDA ISAO
IPC分类号： H03F1/00 , H01L21/822 , H01L27/02 , H01L27/04 , H01L29/78 , H02H7/20
CPC分类号： H01L29/7808 , H01L27/0255
摘要： PURPOSE:To contrive to improve gate protection effect by simplify manufacturing processes by connecting a p -n-p junction diode as the protection element for a p-channel MOSFET. CONSTITUTION:The photoetching to expose channel parts is performed, and then n-type regions 5 serving as the channel parts are formed in self-alignment by phosphorus ion implantation and diffusion. Boron impurity is deposited or diffused at high concentration with LTP films 6 left by removing a part by photoetching as the mask. Thereby, p type regions 7 serving as sources are formed at a part of the channel parts, the part 8 of the exposure of a polycrystalline Si layer is changed into p type one; accordingly the p -n-p junction is obtained between the masked n type part. After a PSG is formed as a layer insulation film 9, and contact photoetching is performed, aluminum is adhered, and then the source electrode 10 connected to the p type polycrystalline Si layer on one side of the p -n-p junction and the gate electrode 11 connected to the polycrystalline Si layer 8 on the other side are formed.
摘要翻译：目的：通过连接一个p + + - p-p +结二极管作为p沟道MOSFET的保护元件，通过简化制造工艺来提高栅极保护效果。构成：进行曝光通道部分的光刻，然后通过磷离子注入和扩散自对准地形成作为通道部分的n型区域5。通过用光刻作为掩模去除一部分，剩下的LTP膜6以高浓度沉积或扩散硼杂质。由此，作为源极的p +型区域7形成在沟道部分的一部分，多晶Si层的曝光部分8变为p +型区域; 因此，在掩蔽的n型部分之间获得p + + n-p +结。在形成PSG作为层间绝缘膜9并进行接触光刻后，粘附铝，然后将连接到p +一侧的p +型多晶Si层的源极10连接到p + 并且形成与另一侧的多晶硅层8连接的栅电极11。

46. 发明专利

JPS5937035A Work processing apparatus 失效
标题翻译：工作加工设备
公开(公告)号：JPS5937035A
公开(公告)日：1984-02-29
申请号：JP14613682
申请日：1982-08-25
申请人： Hitachi Ltd
发明人： ENDOU HIDENORI , YOSHIDA ISAO
IPC分类号： B23Q41/02 , B23Q11/08 , B23Q11/10 , B61D47/00 , B65G1/04
CPC分类号： B23Q11/0875 , B23Q11/10
摘要： PURPOSE:To permit correct positioning by installing an oil pan under a traveling dolly and installing a wiper which makes contact with a rail and a rack. CONSTITUTION:A traveling dolly 3 travels on a rail 2 by driving a pinion 21 engaged with a rack 22 by a motor 20. In this case, the oil containing chip etc. is removed by an oil pan 45 and sticking tip etc. are removed by wiper, and swing of a rail B in the laterale direction is suppressed by holding said rail 2B with a wheel 19 and engagement between the rack 22 and the pinion 21 is corrected, so as to rectify positioning. A pollet 15 having a work 17 loaded is transferred between a stocker 8 and a machine tool by a transversely traveling dolly 4.
摘要翻译：目的：通过将油底座安装在旅行小车上并安装与导轨和机架接触的雨刮器来允许正确定位。构成：行驶台车3通过用电动机20驱动与齿条22啮合的小齿轮21，在轨道2上行驶。在这种情况下，油盘45除去油包屑片屑等，并且去除粘贴尖端等通过擦拭器并且通过用轮19保持所述轨道2B并且校正齿条22和小齿轮21之间的接合来抑制轨道B在后方方向上的摆动，从而校正定位。具有加载工件17的小轮15通过横向行进的小车4在储料器8和机床之间转移。

47. 发明专利

JPS58197176A Device for installing gateway part on stair side of elevator 失效
标题翻译：用于安装电梯的台面部分的装置
公开(公告)号：JPS58197176A
公开(公告)日：1983-11-16
申请号：JP7674182
申请日：1982-05-10
申请人： Hitachi Ltd , Hitachi Elevator & Service
发明人： YOSHIDA ISAO , ANDOU TOSHIO , KAWABE MICHIO
IPC分类号： E04G21/18 , B66B7/00 , E04G21/16

48. 发明专利

JPS58130566A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58130566A
公开(公告)日：1983-08-04
申请号：JP1165182
申请日：1982-01-29
申请人： HITACHI LTD
发明人： YOSHIDA ISAO , OKABE TAKEAKI , KATSUEDA MINEO , ITOU MITSUO , NAGATA MINORU
IPC分类号： H01L29/41 , H01L29/417 , H01L29/861
摘要： PURPOSE:To obtain a stable operation, in a rectifying diode having a p n or p n contact structure, by differentiating the area ratio between an n layer or n layer and a p layer in a chip, selecting the ratio lower at the central part of the chip, where the current concentration is easily formed by heating, than the ratio at the peripheral part, thereby equalizing the heating distribution. CONSTITUTION:On an n type Si substrate 1, a p type layer 2 is epitaxially grown, and a plurality of independently neighboring p type layers 3 and n type layers 4 are diffused and formed. Then an Al electrode 6 is provided on the surfaces of said regions. A solder electrode 5 is deposited on the back surface of the substrate 1. In this constitution, the area ration An/Ap between the n type layer and the p layer 3 is differentiated depending on the positions of the chip. Namely, when the width of the layer 4 at the central part is 5mum, the width at the peripheral part is 10mum, and the width is gradually widened. The ratio An/ Ap at the central part is 1, whereas the ratio at the peripheral part is 2. In this way, the current concentration in the electrode contact region becomes gentle, and the stable operation can be performed even at a high temperature.

49. 发明专利

JPS57178371A INSULATING GATE FIELD-EFFECT ELEMENT 失效
公开(公告)号：JPS57178371A
公开(公告)日：1982-11-02
申请号：JP6249681
申请日：1981-04-27
申请人： HITACHI LTD
发明人： OKABE TAIAKI , YOSHIDA ISAO , NAGATA MINORU , ITOU MITSUO , ASHIKAWA KAZUTOSHI
IPC分类号： H03F1/52 , H01L27/02 , H01L27/06 , H01L29/78 , H02H7/20 , H03F1/42
摘要： PURPOSE:To enable to inspect the dielectric resistance of a gate insulating film by adjacently arranging a bonding pad for a gate of the field-effect element and a bonding pad for a protective diode. CONSTITUTION:In a device of which the protective diodes 2 are connected in parallel between the gate and source of the field-effect element 1, the bonding pad 3 for the gate of the field-effect element and the bonding pad 4 for the protective diodes are formed adjacently under a condition that both pads are not conneted electrically. Arbitrary voltage can be applied to the gate insulating film because the protective diodes are not connected to the gate terminal of the field-effect element 1 under a wafer condition. The protective diodes 2 can be connected in parallel between the gate and the source because the bonding pads 3, 4 are bonded by a wire 5 at a stage when the element is assembled.

50. 发明专利

JPS57131638A SIMULTANEOUSLY SUPPLYING DEVICE FOR PARTS OF DIFFERENT KIND 失效
公开(公告)号：JPS57131638A
公开(公告)日：1982-08-14
申请号：JP1293781
申请日：1981-02-02
申请人： HITACHI LTD
发明人： TOKORO SUKEFUMI , YOSHIDA ISAO
IPC分类号： B23P19/00 , B65G59/02
摘要： PURPOSE:To enable simultaneous supply of parts of different thickness by a method wherein identical parts to be supplied to an assembly part by a robot are arranged in plural groups of parts which are constituted so that each group of parts of them is made to move a transferable quantity set with a transfer quantity setting device at a time, and a device is miniaturized. CONSTITUTION:Parts container frames 2a-2e are provided on a circumference having a radius of R within neighborhood of a base of an industrial robot, and parts 3a-3e are contained in piles in each of the part container frames 2a-2e respectively. And pitches or pinion gear diameters and pitches of push out rack gears 6a-6e and pinion gears 7a-7e are set so that they correspond to each thickness of the parts 3a-3e respectively and a turning angle of an electric motor 10. Because of the above when one unit of the electric motor 10 is operated the parts 3a-3e contained in each of the container frames 3a-3e respectively are pushed out by their thickness with the rack gears 6a-6e and the pinion gears 7a-7e for simultaneous supply to the predetermined location.

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