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41. 发明申请

US20090068841A1 Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device 有权
标题翻译：有机薄膜的化学机械抛光方法及制造半导体器件的方法
公开(公告)号：US20090068841A1
公开(公告)日：2009-03-12
申请号：US12289326
申请日：2008-10-24
申请人： Yukiteru Matsui , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano , Atsushi Shigeta
发明人： Yukiteru Matsui , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano , Atsushi Shigeta
IPC分类号： H01L21/304
CPC分类号： H01L21/76808 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L27/10867
摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.
摘要翻译：公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

42. 发明授权

US07465668B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07465668B2
公开(公告)日：2008-12-16
申请号：US11296483
申请日：2005-12-08
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： B24B37/042 , H01L21/3212 , H01L21/7684
摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.
摘要翻译：提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜，在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。

43. 发明授权

US07332104B2 Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于CMP的浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US07332104B2
公开(公告)日：2008-02-19
申请号：US11407945
申请日：2006-04-21
申请人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8 (A) 0.7≦w1/(w1+w2)≦0.97 (B) 3≦d2/d1≦5 (C) 0.7≦w1/(w1+w2)≦0.9. (D)
摘要翻译：公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d1的第一胶体粒子，第一胶体粒子的重量为w1，第二胶体粒子具有一次粒径大于第一胶体粒子的粒径，平均粒径为d2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比为d 2，d2 选择w1和w2同时满足以下条件（A）和（B），不包括d1，d2，w1和w2同时符合以下条件（C）和（D）的情况：<？在线公式描述=“ 在线公式“end =”lead“？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =”In-line Formulas“end =”tail“？> line-formula description =“In-line Formulas”end =“lead”？> 0.7 <= w1 /（w1 + w2）<= 0.97（B）<？in-line-formula description =“I 3线=公式“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 3 <= d2 / d1 <= 5（C） line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.7 <= w1 /（w1 + w2） <= 0.9。（D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

44. 发明授权

US07307023B2 Polishing method of Cu film and method for manufacturing semiconductor device 有权
公开(公告)号：US07307023B2
公开(公告)日：2007-12-11
申请号：US11540707
申请日：2006-10-02
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Susumu Yamamoto
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Susumu Yamamoto
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , B24B37/015 , B24B49/16 , B24B57/02 , C09G1/02
摘要： A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.

45. 发明申请

US20060197055A1 Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于CMP的浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US20060197055A1
公开(公告)日：2006-09-07
申请号：US11407945
申请日：2006-04-21
申请人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8 (A) 0.7≦5 w1/(w1+w2)≦0.97 (B) 3≦d2/d1≦5 (C) 0.7≦w1/(w1+w2)≦0.9 (D)
摘要翻译：公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d 1的第一胶体粒子，第一胶体粒子的重量为w 1，第二胶体粒子其第一粒径大于第一胶体粒子的一次粒径，平均粒径为d 2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比，其中d 1，d 2，w 1和w 2同时满足以下条件（A）和（B），不包括d 1，d 2，w 1和w 2同时满足以下条件（C）和（D ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d 2 / d 1 <= 8（A）<？in-line-formula description = 线公式“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.7 <= 5 w 1 /（w 1 + w 2）<= 0.97 B）<？in-li ne-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d 2 / d 1 <= 5（C）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> = w 1 /（w 1 + w 2）<= 0.9（D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

46. 发明申请

US20060175296A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060175296A1
公开(公告)日：2006-08-10
申请号：US11296483
申请日：2005-12-08
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C03C15/00 , B44C1/22 , H01L21/302 , C23F1/00
CPC分类号： B24B37/042 , H01L21/3212 , H01L21/7684
摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.
摘要翻译：提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜，在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。

47. 发明申请

US20050266355A1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20050266355A1
公开(公告)日：2005-12-01
申请号：US11118316
申请日：2005-05-02
申请人： Yukiteru Matsui , Gaku Minamihaba , Atsushi Shigeta , Hiroyuki Yano , Satoko Seta , Hirokazu Kato
发明人： Yukiteru Matsui , Gaku Minamihaba , Atsushi Shigeta , Hiroyuki Yano , Satoko Seta , Hirokazu Kato
IPC分类号： G03F7/00 , G03F7/09 , H01L21/033 , H01L21/3105 , H01L21/311 , H01L21/768
CPC分类号： G03F7/094 , H01L21/0332 , H01L21/0337 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L21/76825 , H01L21/76835
摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.
摘要翻译：公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜，通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

48. 发明授权

US06454819B1 Composite particles and production process thereof, aqueous dispersion, aqueous dispersion composition for chemical mechanical polishing, and process for manufacture of semiconductor device 有权
标题翻译：复合粒子及其制造方法，水分散体，化学机械抛光用水性分散体组合物，半导体装置的制造方法
公开(公告)号：US06454819B1
公开(公告)日：2002-09-24
申请号：US09484064
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Masayuki Motonari , Masayuki Hattori , Akira Iio
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Katsuya Okumura , Masayuki Motonari , Masayuki Hattori , Akira Iio
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C08G83/001 , C08J3/128 , C08K3/36 , C08K5/057 , C08K2201/013 , C09G1/02 , C09K3/1436 , H01L21/02024 , H01L21/31053 , H01L21/3212
摘要： A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.
摘要翻译：一种用于化学机械抛光晶片上的工作薄膜的方法，该方法需要用含水和复合颗粒的水性分散体进行化学机械抛光，所述复合颗粒含有具有硅化合物部分或部分和在聚合物颗粒上直接或间接形成的金属化合物部分或部分。

49. 发明授权

US06375545B1 Chemical mechanical method of polishing wafer surfaces 有权
标题翻译：抛光晶圆表面的化学机械方法
公开(公告)号：US06375545B1
公开(公告)日：2002-04-23
申请号：US09484252
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053 , Y10S977/775 , Y10S977/888
摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.
摘要翻译：本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造半导体器件使用它们。本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。并且通过使用CMP浆料制造半导体器件。

50. 发明授权

US07682975B2 Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US07682975B2
公开(公告)日：2010-03-23
申请号：US11472462
申请日：2006-06-22
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/461 , H01L21/4763
CPC分类号： H01L21/76829 , C09G1/02 , H01L21/31053 , H01L21/3212 , H01L21/76802 , H01L21/7684
摘要： A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.
摘要翻译：一种半导体器件制造方法，包括在衬底的顶表面上形成薄膜; 抛光所述衬底的背面; 并且在后表面的抛光之后，在所述基板的顶表面处形成所述薄膜。

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