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    • 42. 发明授权
    • Amplifying circuit for use with a high impedance source transducer
    • 用于高阻抗源传感器的放大电路
    • US3993869A
    • 1976-11-23
    • US513756
    • 1974-10-10
    • Osamu KonoTakeshi MatsudairaMakoto Ishikawa
    • Osamu KonoTakeshi MatsudairaMakoto Ishikawa
    • H03F3/18H03F3/185H03F3/20H03F3/30H03F3/34H03F3/345H04R3/00
    • H03F3/1855
    • An amplifying circuit for use with a transducer includes a pair of field-effect transistors which are of different conductive types from each other and each of which has gate, drain and source electrodes. The gate electrodes of the field-effect transistors are connected to each other and are further connected to an output terminal of an electrostatic type mechanical-electrical transducer, while the source electrodes of the field-effect transistors are connected to each other and are further connected to an output circuit. One of the drain electrodes is connected to a voltage source and the other drain electrode is connected to the circuit ground. High input impedance is maintained by using no gate resistor at the input, and using a current-sourced source-follower secondstage. Source resistors improve linear performance.
    • 与换能器一起使用的放大电路包括一对具有不同导电类型的场效应晶体管,每一个具有栅极,漏极和源极。 场效应晶体管的栅电极彼此连接并且进一步连接到静电型机电换能器的输出端,而场效应晶体管的源极彼此连接并进一步连接 到输出电路。 一个漏电极连接到电压源,另一个漏电极连接到电路接地。 通过在输入端不使用栅极电阻,并使用电流源跟随器第二级来保持高输入阻抗。 源电阻提高线性性能。
    • 48. 发明申请
    • METHOD AND SOLUTION FOR CLEANING SEMICONDUCTOR DEVICE SUBSTRATE
    • 清洁半导体器件衬底的方法和解决方案
    • US20100294306A1
    • 2010-11-25
    • US12746025
    • 2008-12-03
    • Hideaki MochizukiMakoto IshikawaNoriyuki Saito
    • Hideaki MochizukiMakoto IshikawaNoriyuki Saito
    • B08B3/12C11D3/43
    • C11D3/044C11D1/72C11D3/2068C11D3/3947C11D7/06C11D7/263C11D11/0047H01L21/02052H01L21/02057
    • Provided is a method for cleaning a semiconductor device substrate, which is excellent in removability and re-adhesion-preventing properties of contaminations of fine particles or organic matter, metal contamination and combined contamination of organic matter and metal, which are adhered to a substrate surface, and which can highly clean the substrate surface without corroding it even when an intense ultrasonic wave is not applied.It is a method for cleaning a semiconductor device substrate, the method comprising cleaning the semiconductor device substrate while applying an ultrasonic wave having an intensity of 0.2 W or more and 1.5 W or less per cm2 of substrate to be irradiated with the ultrasonic wave by using a cleaning solution comprising the following components (A) to (D): (A) hydrogen peroxide, (B) an alkali, (C) water, and (D) a compound represented by the following general formula (1): R1—O—(—R2—O—)n—H(1) wherein R1 represents an alkyl group having 1 to 4 carbon atoms, R2 represents an alkylene group having 2 to 3 carbon atoms, and n represents an integer of 1 to 3.
    • 本发明提供一种清洁半导体器件基板的方法,该半导体器件基板具有优异的附着在基板表面上的细小颗粒或有机物污染物的可除去性和再粘合防止性,金属污染和有机物和金属的组合污染 即使在不施加强烈的超声波的情况下,也可以高度清洁基板表面而不使其腐蚀。 本发明是一种清洗半导体器件基板的方法,其特征在于,在施加超声波的情况下,通过使用0.2W以上且1.5W以下的超声波对每1cm 2的被照射超声波的基板进行清洗, 包含以下组分(A)至(D)的清洁溶液:(A)过氧化氢,(B)碱,(C)水和(D)由以下通式(1)表示的化合物:R1- O - ( - R2-O-)n-H(1)其中R1表示碳原子数1〜4的烷基,R2表示碳原子数2〜3的亚烷基,n表示1〜3的整数。