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41. 发明授权

US07972483B2 Method of fault detection for material process system 有权
标题翻译：材料加工系统故障检测方法
公开(公告)号：US07972483B2
公开(公告)日：2011-07-05
申请号：US10500005
申请日：2002-12-31
申请人： John Donohue , Hongyu Yue
发明人： John Donohue , Hongyu Yue
IPC分类号： C23C14/22
CPC分类号： H01L21/67265 , G05B23/0229 , H01J37/32935 , H01L21/31116 , H01L21/67253 , H01L21/67288 , H01L22/20
摘要： A method for material processing utilizing a material processing system to perform a process. The method performs a process (510), measures a scan of data (520), and transforms the data scan (530) into a signature (540) including at least one spatial component. The scan of data (530) can include a process performance parameter such as an etch rate, an etch selectivity, a deposition rate, a film property, etc. The signature (540) can be stored (550), and compared with either a previously acquired signature or with an ideal signature (560). If at least one spatial component substantially deviates from the reference spatial component, then a process fault has potentially occurred. If the cumulative deviation of all spatial components or a select group of components substantially deviates from a reference set of spatial components, then a process fault has potentially occurred.
摘要翻译：一种利用材料处理系统进行处理的材料处理方法。该方法执行处理（510），测量数据的扫描（520），并将数据扫描（530）转换成包括至少一个空间分量的签名（540）。数据扫描（530）可以包括诸如蚀刻速率，蚀刻选择性，沉积速率，膜性质等的工艺性能参数。可以存储（550）签名（540），并与以前获得的签名或理想签名（560）。如果至少一个空间分量基本上偏离参考空间分量，则可能发生过程故障。如果所有空间分量或选择组的组合的累积偏差基本上偏离参考空间分量集合，则可能发生过程故障。

42. 发明授权

US07713760B2 Process system health index and method of using the same 有权
标题翻译：过程系统健康指标及使用方法
公开(公告)号：US07713760B2
公开(公告)日：2010-05-11
申请号：US10809437
申请日：2004-03-26
申请人： Hongyu Yue , Hieu A. Lam
发明人： Hongyu Yue , Hieu A. Lam
IPC分类号： H01L21/00
CPC分类号： H01J37/3299 , H01J37/32935 , H01L21/67253 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method of monitoring a processing system for processing a substrate during the course of semiconductor manufacturing is described. The method comprises acquiring data from the processing system for a plurality of observations. It further comprises constructing a principal components analysis (PCA) model from the data, wherein a weighting factor is applied to at least one of the data variables in the acquired data. The PCA mode is utilized in conjunction with the acquisition of additional data, and at least one statistical quantity is determined for each additional observation. Upon setting a control limit for the processing system, the at least one statistical quantity is compared with the control limit for each additional observation. When, for example, the at least one statistical quantity exceeds the control limit, a fault for the processing system is detected.
摘要翻译：描述了在半导体制造过程中监视用于处理衬底的处理系统的方法。该方法包括从处理系统获取多个观察数据。其还包括从数据构建主成分分析（PCA）模型，其中对所获取的数据中的至少一个数据变量应用加权因子。 PCA模式与采集附加数据一起使用，并且每个附加观察确定至少一个统计量。在设置处理系统的控制限制时，将至少一个统计量与每个附加观察的控制限制进行比较。当例如至少一个统计量超过控制极限时，检测到处理系统的故障。

43. 发明申请

US20100068897A1 DIELECTRIC TREATMENT PLATFORM FOR DIELECTRIC FILM DEPOSITION AND CURING 审中-公开
标题翻译：用于电介质膜沉积和固化的介质处理平台
公开(公告)号：US20100068897A1
公开(公告)日：2010-03-18
申请号：US12211681
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： H01L21/00 , A61N5/00
CPC分类号： H01L21/67115 , H01L21/3105
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

44. 发明申请

US20100067886A1 IR LASER OPTICS SYSTEM FOR DIELECTRIC TREATMENT MODULE 审中-公开
标题翻译：用于电介质处理模块的红外激光光学系统
公开(公告)号：US20100067886A1
公开(公告)日：2010-03-18
申请号：US12211675
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： A21B2/00
CPC分类号： H01L21/31695 , B05D1/002 , B05D3/0209 , B05D3/0263 , B05D3/067 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/02345 , H01L21/02348 , H01L21/3105
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

45. 发明申请

US20100065759A1 DIELECTRIC TREATMENT MODULE USING SCANNING IR RADIATION SOURCE 有权
标题翻译：使用扫描红外辐射源的电介质处理模块
公开(公告)号：US20100065759A1
公开(公告)日：2010-03-18
申请号：US12211640
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： A61N5/00
CPC分类号： H01L21/67115 , B23K26/082 , B23K26/12 , B23K26/127 , C23C16/56
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

46. 发明申请

US20100065758A1 DIELECTRIC MATERIAL TREATMENT SYSTEM AND METHOD OF OPERATING 审中-公开
标题翻译：电介质材料处理系统及其操作方法
公开(公告)号：US20100065758A1
公开(公告)日：2010-03-18
申请号：US12211598
申请日：2008-09-16
申请人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
发明人： Junjun Liu , Jacques Faguet , Eric M. Lee , Dorel I. Toma , Hongyu Yue
IPC分类号： G21K5/00
CPC分类号： H01L21/268 , H01L21/67115 , H01L21/67184 , H01L21/67207
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个工艺模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

47. 发明申请

US20090099991A1 METHOD AND SYSTEM FOR PREDICTING PROCESS PERFORMANCE USING MATERIAL PROCESSING TOOL AND SENSOR DATA 有权
标题翻译：使用材料加工工具和传感器数据预测过程性能的方法和系统
公开(公告)号：US20090099991A1
公开(公告)日：2009-04-16
申请号：US12255698
申请日：2008-10-22
申请人： Hieu A. LAM , Hongyu Yue , John Shriner
发明人： Hieu A. LAM , Hongyu Yue , John Shriner
IPC分类号： G06N5/02
CPC分类号： H01L22/20 , G05B19/41875 , G05B23/0254 , G05B2219/31357 , G05B2219/32179 , G05B2219/32194 , G05B2219/45028 , G05B2219/45031 , H01J37/32935 , Y02P90/14 , Y02P90/22
摘要： A method for constructing a process performance prediction model for a material processing system, the method including the steps of: recording tool data for a plurality of observations during a process in a process tool, the tool data comprises a plurality of tool data parameters; recording process performance data for the plurality of observations during the process in the process tool, the process performance data comprises one or more process performance parameters; performing a partial least squares analysis using the tool data and the process performance data; and computing correlation data from the partial least squares analysis.
摘要翻译：一种用于构建材料处理系统的过程性能预测模型的方法，所述方法包括以下步骤：在处理工具中的处理期间记录多个观察值的工具数据，所述工具数据包括多个工具数据参数; 在所述过程工具中的过程期间记录所述多个观察值的过程性能数据，所述过程执行数据包括一个或多个过程性能参数; 使用工具数据和过程执行数据执行偏最小二乘法分析; 并从偏最小二乘法分析计算相关数据。

48. 发明授权

US07297560B2 Method and apparatus for detecting endpoint 失效
标题翻译：用于检测端点的方法和装置
公开(公告)号：US07297560B2
公开(公告)日：2007-11-20
申请号：US10531468
申请日：2003-10-31
申请人： Hongyu Yue
发明人： Hongyu Yue
IPC分类号： H01L21/00
CPC分类号： G01N21/73 , H01J37/32935 , H01L21/67069 , H01L21/67253
摘要： The present invention presents a method for detecting an endpoint of an etch process for etching a substrate in plasma processing system (1) comprising: etching the substrate; measuring at least one endpoint signal; generating at least one filtered endpoint signal by filtering the at least one endpoint signal, wherein the filtering comprises applying a Savitsky Golay filter (12) to the at least one endpoint signal; and determining (14) an endpoint of the etch process from the at least one filtered endpoint signal.
摘要翻译：本发明提出了一种用于检测在等离子体处理系统（1）中蚀刻衬底的蚀刻工艺的端点的方法，包括：蚀刻衬底; 测量至少一个端点信号; 通过对所述至少一个端点信号进行滤波来产生至少一个经滤波的端点信号，其中所述滤波包括将Savitsky Golay滤波器（12）应用于所述至少一个端点信号; 以及从所述至少一个滤波的端点信号确定（14）所述蚀刻处理的端点。

49. 发明授权

US06564114B1 Determining endpoint in etching processes using real-time principal components analysis of optical emission spectra 失效
标题翻译：使用光发射光谱的实时主成分分析确定蚀刻工艺中的终点
公开(公告)号：US06564114B1
公开(公告)日：2003-05-13
申请号：US09491883
申请日：2000-01-26
申请人： Anthony John Toprac , Joseph William Wiseman , Hongyu Yue
发明人： Anthony John Toprac , Joseph William Wiseman , Hongyu Yue
IPC分类号： G06F1400
CPC分类号： G01N21/71 , A61K39/00 , C07K14/195 , G01N21/73 , G05B2219/32187 , G05B2219/45031 , H01J37/32082 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01J2237/334 , H01J2237/3341 , H01L21/67069 , H01L21/67253 , H01L22/20 , H01L22/26
摘要： A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the collected intensity data into at most first and second Principal Components with respective Loadings and corresponding Scores. The method also includes determining the etch endpoint using the respective Loadings and corresponding Scores of the second Principal Component as an indicator for the etch endpoint using real-time Principal Components Analysis applied to optical emission spectral data from a previous portion of the plasma etch process.
摘要翻译：提供了一种用于确定蚀刻端点的方法。该方法包括在等离子体蚀刻工艺期间收集代表光发射光谱波长的强度数据。该方法还包括将所收集的强度数据的至少一部分分析成具有相应负载和对应的分数的至多第一和第二主要分量。该方法还包括使用相应的负载和相应的第二主要分量的分数来确定蚀刻端点，作为蚀刻端点的指示符，其使用实时主成分分析应用于等离子体蚀刻工艺的先前部分的光发射光谱数据。

50. 发明授权

US06419846B1 Determining endpoint in etching processes using principal components analysis of optical emission spectra 有权
标题翻译：使用光发射光谱的主成分分析确定蚀刻过程中的终点
公开(公告)号：US06419846B1
公开(公告)日：2002-07-16
申请号：US09491506
申请日：2000-01-26
申请人： Anthony John Toprac , Joseph William Wiseman , Hongyu Yue
发明人： Anthony John Toprac , Joseph William Wiseman , Hongyu Yue
IPC分类号： H01L2100
CPC分类号： G01N21/71 , A61K39/00 , C07K14/195 , G01N21/73 , G05B2219/32187 , G05B2219/45031 , H01J37/32082 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01J2237/334 , H01J2237/3341 , H01L21/67069 , H01L21/67253 , H01L22/20 , H01L22/26
摘要： A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the collected intensity data into at most first and second Principal Components with respective Loadings and corresponding Scores. The method also includes determining the etch endpoint using the respective Loadings and corresponding Scores of the second Principal Component as an indicator for the etch endpoint using Principal Components Analysis applied to archived optical emission spectral data.
摘要翻译：提供了一种用于确定蚀刻端点的方法。该方法包括在等离子体蚀刻工艺期间收集代表光发射光谱波长的强度数据。该方法还包括将所收集的强度数据的至少一部分分析成具有相应负载和对应的分数的至多第一和第二主要分量。该方法还包括使用应用于存档的光发射光谱数据的主成分分析，使用第二主要分量的相应负载和相应的分数来确定蚀刻端点作为蚀刻端点的指示符。

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