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41. 发明授权

US06878997B2 Compensation component and method for fabricating the component 有权
标题翻译：补偿部件及其制造方法
公开(公告)号：US06878997B2
公开(公告)日：2005-04-12
申请号：US10675758
申请日：2003-09-30
申请人： Frank Pfirsch
发明人： Frank Pfirsch
IPC分类号： H01L29/06 , H01L29/78 , H01L29/76
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/7801 , H01L29/7824
摘要： A compensation component, in which a lateral section and, at least at one end of the lateral section, a section that is inclined with respect to the surface of a drift path, includes n-conducting and p-conducting regions completely embedded in a semiconductor body without a trench. In such a case, the inclined section is formed by ion implantation through an implantation mask with an inclined edge.
摘要翻译：补偿部件，其中横截面和至少在横截面的一端处相对于漂移路径的表面倾斜的部分包括完全嵌入半导体中的n导电和p导电区域身体没有沟槽。在这种情况下，通过具有倾斜边缘的注入掩模的离子注入形成倾斜部分。

42. 发明授权

US06445048B1 Semiconductor configuration having trenches for isolating doped regions 有权
标题翻译：具有用于隔离掺杂区域的沟槽的半导体构造
公开(公告)号：US06445048B1
公开(公告)日：2002-09-03
申请号：US09657074
申请日：2000-09-07
申请人： Frank Pfirsch
发明人： Frank Pfirsch
IPC分类号： H01L29772
CPC分类号： H01L29/66348 , H01L21/763 , H01L29/0619 , H01L29/0638 , H01L29/0653 , H01L29/404 , H01L29/407 , H01L29/7397
摘要： A semiconductor configuration includes a substrate having a first conduction type. A transistor configuration is disposed at the substrate and is formed from at least one field-effect transistor having at least two doped regions embedded in the substrate and at least one gate electrode. The regions have a second conduction type, are disposed between the transistor configuration and the substrate edge, and extend from the substrate surface into the substrate and surround the transistor configuration. At least two adjacent insulating trench regions are disposed between the regions and extend from the substrate surface into the substrate for isolating the doped regions from one another. The trenches may have a smaller depth than the doped regions. A method for fabricating a semiconductor configuration includes providing a substrate having a first conduction type and producing regions in the substrate by introducing a dopant. The regions have a second conduction type. They extend from the surface of the substrate into the substrate and are isolated from one another in the substrate. A trench is produced at the boundary of each one of the regions facing a respective other one of the regions. Each trench has a depth greater than a depth of the respective at least two regions after introducing the dopant but less than a desired depth of the regions. The dopant is outdiffused to a desired depth greater than the depth of each respective trench. Each trench is filled by forming an insulating layer therein.
摘要翻译：半导体结构包括具有第一导电类型的衬底。晶体管配置设置在衬底上并且由至少一个场效应晶体管形成，该场效应晶体管具有嵌入衬底中的至少两个掺杂区域和至少一个栅电极。这些区域具有第二导电类型，设置在晶体管配置和衬底边缘之间，并且从衬底表面延伸到衬底中并且围绕晶体管配置。至少两个相邻的绝缘沟槽区域设置在区域之间并且从衬底表面延伸到衬底中，用于将掺杂区域彼此隔离。沟槽可以具有比掺杂区域更小的深度。制造半导体结构的方法包括提供具有第一导电类型的衬底，并通过引入掺杂剂在衬底中产生区域。这些区域具有第二导电类型。它们从衬底的表面延伸到衬底中并且在衬底中彼此隔离。在面对相应的另一个区域的每个区域的边界处产生沟槽。每个沟槽在引入掺杂剂之后具有大于相应的至少两个区域的深度的深度，但是小于所述区域的期望深度。掺杂剂超出比每个相应沟槽的深度大的期望深度。通过在其中形成绝缘层来填充每个沟槽。

43. 发明授权

US06201279B1 Semiconductor component having a small forward voltage and high blocking ability 有权
标题翻译：具有小的正向电压和高阻塞能力的半导体元件
公开(公告)号：US06201279B1
公开(公告)日：2001-03-13
申请号：US09425340
申请日：1999-10-22
申请人： Frank Pfirsch
发明人： Frank Pfirsch
IPC分类号： H01L2978
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/405 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/872
摘要： The semiconductor component has a small forward voltage and a high blocking ability. At least one drift path suitable for taking up voltage is formed in a semiconductor body between two electrodes that are arranged at a distance from one another. At least one semi-insulating layer is provided parallel to the drift path. The semi-insulating layer leads to a linear rise in the potential between the two electrodes when a reverse voltage is applied.
摘要翻译：半导体元件具有小的正向电压和高的阻塞能力。在两个彼此间隔一定距离的两个电极之间的半导体本体中形成适合于接收电压的至少一个漂移路径。至少一个半绝缘层平行于漂移路径设置。当施加反向电压时，半绝缘层导致两个电极之间的电位的线性上升。

44. 发明授权

US6066864A Thyristor with integrated dU/dt protection 有权
标题翻译：具有集成dU / dt保护的晶闸管
公开(公告)号：US6066864A
公开(公告)日：2000-05-23
申请号：US194178
申请日：1998-11-20
申请人： Martin Ruff , Hans-Joachim Schulze , Frank Pfirsch
发明人： Martin Ruff , Hans-Joachim Schulze , Frank Pfirsch
IPC分类号： H01L29/10 , H01L29/74
CPC分类号： H01L29/7424 , H01L29/102 , H01L29/7428
摘要： Given too great a dU/dt load of a thyristor, this can trigger in uncontrolled fashion in the region of the cathode surface. Since the plasma only propagates poorly there and the current density consequently reaches critical values very quickly, there is the risk of destruction of the thyristor due to local overheating. The proposed thyristor has a centrally placed BOD structure and a plurality of auxiliary thyristors (1.-5. AG) annularly surrounding the BOD structure. The resistance of the cathode-side base (8) is locally increased under the emitter region (11) allocated to the innermost auxiliary thyristor (1. AG). Since the width (L) and the sheet resistivity of this annular zone (15) critically influences the dU/dt loadability of the first auxiliary thyristor (1. AG), a suitable dimensioning of these parameters assures that the central thyristor region comprises the smallest dU/dt sensitivity of the system and, accordingly, it also ignites first given upward transgression of a critical value of the voltage steepness.
摘要翻译： PCT No.PCT / DE97 / 00927 Sec。 371日期：1998年11月20日 102（e）1998年11月20日日期PCT提交1997年5月7日PCT公布。公开号WO97 / 44827 日期1997年11月27日由于晶闸管的dU / dt负载太大，这可能会在阴极表面的区域以不受控制的方式触发。由于等离子体仅在那里传播不良，电流密度因此很快达到临界值，所以存在由于局部过热而导致晶闸管损坏的风险。所提出的晶闸管具有中心放置的BOD结构和环绕着BOD结构的多个辅助晶闸管（1.-5·AG）。在分配给最内侧辅助晶闸管（1.AG）的发射极区域（11）处，阴极侧基极（8）的电阻局部增加。由于该环形区域（15）的宽度（L）和薄层电阻率严重影响第一辅助晶闸管（1.AG）的dU / dt负载能力，所以这些参数的合适尺寸确保了中央晶闸管区域包括最小系统的dU / dt灵敏度，因此也会首先给出电压陡度的临界值的向上偏移。

45. 发明授权

US6064103A Device with a P-N junction and a means of reducing the risk of breakdown of the junction 失效
标题翻译：具有P-N结的装置以及降低结的破坏风险的手段
公开(公告)号：US6064103A
公开(公告)日：2000-05-16
申请号：US43640
申请日：1998-03-20
申请人： Frank Pfirsch
发明人： Frank Pfirsch
IPC分类号： H01L29/73 , H01L21/331 , H01L29/06 , H01L29/40 , H01L29/78 , H01L29/861 , H01L23/58
CPC分类号： H01L29/404 , H01L29/0615 , H01L29/402
摘要： The arrangement with a pn-junction and the measure for reducing the risk of a breakdown of the junction is composed of a combination of a field plate (4) and a stop electrode respectively having a multi-step edge section (40 or, respectively, 50) with a JTE technique, as a result whereof blocking voltages clearly above 2500 Volts can be achieved given slight space requirement.
摘要翻译： PCT No.PCT / DE96 / 01557 Sec。 371日期：1998年3月20日 102（e）1998年3月20日PCT PCT 1996年8月22日PCT公布。公开号WO97 / 11495 日期1997年3月27日具有pn结的布置以及降低接合点击穿风险的措施由场板（4）和分别具有多段边缘部分的停止电极（ 40或分别为50），其结果是在轻微的空间要求下可以实现明显高于2500伏特的阻挡电压。

46. 发明授权

US09018674B2 Reverse conducting insulated gate bipolar transistor 有权
标题翻译：反向导通绝缘栅双极晶体管
公开(公告)号：US09018674B2
公开(公告)日：2015-04-28
申请号：US13441364
申请日：2012-04-06
申请人： Dorothea Werber , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze , Franz Hirler , Alexander Philippou
发明人： Dorothea Werber , Anton Mauder , Frank Pfirsch , Hans-Joachim Schulze , Franz Hirler , Alexander Philippou
IPC分类号： H01L29/739 , H01L29/06 , H01L29/08
CPC分类号： H01L29/7396 , H01L29/0696 , H01L29/0834
摘要： A semiconductor includes a drift zone of a first conductivity type arranged between a first side and a second side of a semiconductor body. The semiconductor device further includes a first region of the first conductivity type and a second region of a second conductivity type subsequently arranged along a first direction parallel to the second side. The semiconductor device further includes an electrode at the second side adjoining the first and second regions. The semiconductor device further includes a third region of the second conductivity type arranged between the drift zone and the first region. The third region is spaced apart from the second region and from the second side.
摘要翻译：半导体包括布置在半导体主体的第一侧和第二侧之间的第一导电类型的漂移区。半导体器件还包括第一导电类型的第一区域和沿着平行于第二侧面的第一方向布置的第二导电类型的第二区域。半导体器件还包括邻近第一和第二区域的第二侧的电极。半导体器件还包括布置在漂移区和第一区之间的第二导电类型的第三区。第三区域与第二区域和第二区域隔开。

47. 发明授权

US08866215B2 Semiconductor component having a transition region 有权
标题翻译：半导体元件具有过渡区域
公开(公告)号：US08866215B2
公开(公告)日：2014-10-21
申请号：US11866016
申请日：2007-10-02
申请人： Frank Pfirsch
发明人： Frank Pfirsch
IPC分类号： H01L29/76 , H01L29/423 , H01L29/10 , H01L29/78 , H01L29/739 , H01L29/40 , H01L29/06 , H01L29/417
CPC分类号： H01L29/7811 , H01L21/28008 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/66704 , H01L29/7397 , H01L29/7813 , H01L29/7825
摘要： A semiconductor component is disclosed. One embodiment provides a semiconductor component including a semiconductor body having a cell array region with trenches and an edge region with pn junction. A transition region with at least one trench is formed between the cell array region and the edge region.
摘要翻译：公开了半导体部件。一个实施例提供了一种半导体元件，其包括具有沟槽的单元阵列区域和具有pn结的边缘区域的半导体本体。在单元阵列区域和边缘区域之间形成具有至少一个沟槽的过渡区域。

48. 发明授权

US08343862B2 Semiconductor device with a field stop zone and process of producing the same 有权
标题翻译：具有场停止区的半导体器件及其制造方法
公开(公告)号：US08343862B2
公开(公告)日：2013-01-01
申请号：US13103784
申请日：2011-05-09
申请人： Hans-Joachim Schulze , Frank Pfirsch , Stephan Voss , Franz-Josef Niedernostheide
发明人： Hans-Joachim Schulze , Frank Pfirsch , Stephan Voss , Franz-Josef Niedernostheide
IPC分类号： H01L21/425
CPC分类号： H01L29/7395 , H01L29/0834 , H01L29/167 , H01L29/32 , H01L29/36
摘要： Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
摘要翻译：本文讨论的实施例涉及通过将掺杂剂原子注入到衬底中以在沟道区域和衬底的表面之间形成场阻挡区域来在半导体衬底内产生场阻挡区的工艺，至少一些掺杂原子具有能级比半导体衬底的导带边缘的能级低至少0.15eV; 并激光退火现场停止区。

49. 发明授权

US08263450B2 Power semiconductor component with charge compensation structure and method for the fabrication thereof 有权
标题翻译：具有电荷补偿结构的功率半导体元件及其制造方法
公开(公告)号：US08263450B2
公开(公告)日：2012-09-11
申请号：US12350776
申请日：2009-01-08
申请人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
发明人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
IPC分类号： H01L21/00
CPC分类号： H01L29/7811 , H01L21/2205 , H01L21/2252 , H01L21/2255 , H01L23/291 , H01L23/298 , H01L29/0634 , H01L29/0661 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
摘要翻译：具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂壁，形成电荷补偿区的互补掺杂壁。

50. 发明授权

US08247874B2 Depletion MOS transistor and charging arrangement 有权
标题翻译：消耗MOS晶体管和充电布置
公开(公告)号：US08247874B2
公开(公告)日：2012-08-21
申请号：US12868918
申请日：2010-08-26
申请人： Franz Hirler , Anton Mauder , Joachim Weyers , Frank Pfirsch
发明人： Franz Hirler , Anton Mauder , Joachim Weyers , Frank Pfirsch
IPC分类号： H01L27/088
CPC分类号： H01L29/7813 , H01L21/823487 , H01L27/0629 , H01L27/0883 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/4238 , H01L29/7803 , H01L29/7828
摘要： A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region by a gate dielectric. The depletion transistor further includes a first discharge region of a second conductivity type arranged adjacent the gate dielectric and electrically coupled to a terminal for a reference potential. The depletion transistor can be included in a charging circuit.
摘要翻译：耗尽型晶体管包括源区和漏区，第一导电类型，第一导电类型的沟道区域布置在源区和漏区之间，第一栅电极邻近沟道区设置并与沟道介电绝缘区域。耗尽晶体管还包括第二导电类型的第一放电区域，其布置成邻近栅极电介质并且电耦合到用于参考电位的端子。耗尽晶体管可以包括在充电电路中。

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