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    • 41. 发明授权
    • Relay-connected semiconductor transistors
    • 继电器连接的半导体晶体管
    • US07495952B2
    • 2009-02-24
    • US11485459
    • 2006-07-13
    • Amit LalShankar RadhakrishnanNorimasa YoshimizuSerhan Ardanuc
    • Amit LalShankar RadhakrishnanNorimasa YoshimizuSerhan Ardanuc
    • G11C11/50
    • G11C23/00B82Y10/00H01H1/0094H01L27/092Y10S977/732Y10S977/943
    • A solid-state semiconductor device operable without loss arising from junction-to junction (e.g., source-to-drain) leakage current includes a movable MEMS switch or relay armature structure carrying at least one electrical contact corresponding to a semiconductor device junction. The switch or relay armature is movable from a first position corresponding to a first switch state to a second position corresponding to a second switch state. The semiconductor device also includes an actuation circuit configured to act on the cantilever switch, changing the switch from a first contact-conducting state to a second non-contact-conducting state by physically separating the switch's electrical contact from the semiconductor device junction, thus eliminating the conductive path for leakage current losses.
    • 可以在没有由结到结(例如,源至漏)漏电流引起的损耗的情况下可操作的固体半导体器件包括携带对应于半导体器件结的至少一个电触点的可移动的MEMS开关或继电器衔铁结构。 开关或继电器电枢可以从对应于第一开关状态的第一位置移动到对应于第二开关状态的第二位置。 半导体器件还包括被配置为作用在悬臂开关上的致动电路,通过将开关的电接触与半导体器件结物理分离,将开关从第一接触导通状态改变到第二非接触导通状态,从而消除 导通路径为漏电流损耗。
    • 42. 发明授权
    • Method and apparatus for separating particles by size
    • 按尺寸分离颗粒的方法和装置
    • US07108137B2
    • 2006-09-19
    • US10263385
    • 2002-10-02
    • Amit LalChung Hoon Lee
    • Amit LalChung Hoon Lee
    • B01D43/00
    • G01N15/0255B01J8/16B01J19/10B03B5/00
    • A method and apparatus for separating a mixture of particles of various sizes in a capillary tube into groups by size using multiple forces of controlled amplitude. Ultrasonic radiation at a first selected frequency is applied to set up a standing pressure wave in the capillary tube, resulting in a first aggregating force which causes particles of all sizes to aggregate at positions within the capillary tube which correspond to nodes or anti-nodes of the standing wave. Transverse vibrations are also applied to the capillary tube. The frequency of the ultrasonic radiation is adjusted to reduce the magnitude of the first aggregating force. Inertial forces resulting from the transverse vibrations then cause the particles to separate by size. The apparatus and method allows a mixture of particles to be separated by size quickly, without requiring the use of high voltages.
    • 一种用于使用多个受控幅度的力将毛细管中各种尺寸的颗粒的混合物分离成大小的方法和装置。 施加第一选定频率的超声波辐射以在毛细管中建立立式压力波,导致第一聚集力,其使得所有尺寸的颗粒聚集在毛细管内的对应于毛细管的节点或反节点的位置处 驻波。 横向振动也施加到毛细管上。 调整超声辐射的频率以减小第一聚集力的大小。 横向振动产生的惯性力使颗粒分离。 该装置和方法允许将颗粒的混合物快速分离,而不需要使用高电压。
    • 45. 发明授权
    • Surgical tool with integrated pressure and flow sensors
    • 具有集成压力和流量传感器的手术工具
    • US06740058B2
    • 2004-05-25
    • US09877714
    • 2001-06-08
    • Amit LalXi Chen
    • Amit LalXi Chen
    • A61M3100
    • A61F9/00745A61B2017/00022A61B2090/064
    • A surgical tool with a rigid body including a needle portion for entering tissue includes a fluid flow channel formed therethrough. A sensor is integrally formed on the tool to detect changing conditions (pressure and/or flow) in the channel. The sensor signal may be used to provide feedback control of pumping of fluid through the channel. The tool may be a micromachined silicon tool with the sensor integrally formed thereon from a silicon nitrate membrane and polysilicon resistors. The tool may be an ultrasonically activated cutting tool, which may be bonded to a package at a node thereof.
    • 包括用于进入组织的针部分的具有刚体的手术工具包括通过其形成的流体流动通道。 传感器整体地形成在工具上以检测通道中的变化条件(压力和/或流动)。 传感器信号可用于提供通过通道泵送流体的反馈控制。 该工具可以是微加工硅工具,其传感器从硅酸盐膜和多晶硅电阻器一体地形成在其上。 该工具可以是超声激活的切割工具,其可以在其节点处结合到包装。
    • 46. 发明授权
    • Direct charge radioisotope activation and power generation
    • 直接电荷放射性同位素激活和发电
    • US06479920B1
    • 2002-11-12
    • US09832342
    • 2001-04-09
    • Amit LalHui LiJames P. BlanchardDouglass L. Henderson
    • Amit LalHui LiJames P. BlanchardDouglass L. Henderson
    • H02N100
    • H01L41/1136G21H1/00G21H3/00
    • An activator has a base on which is mounted an elastically deformable micromechanical element that has a section that is free to be displaced toward the base. An absorber of radioactively emitted particles is formed on the base or the displaceable section of the deformable element and a source is formed on the other of the displaceable section or the base facing the absorber across a small gap. The radioactive source emits charged particles such as electrons, resulting in a buildup of charge on the absorber, drawing the absorber and source together and storing mechanical energy as the deformable element is bent. When the force between the absorber and the source is sufficient to bring the absorber into effective electrical contact with the source, discharge of the charge between the source and absorber allows the deformable element to spring back, releasing the mechanical energy stored in the element. An electrical generator such as a piezoelectric transducer may be secured to the deformable element to convert the released mechanical energy to electrical energy that can be used to provide power to electronic circuits.
    • 活化剂具有基座,其上安装有可弹性变形的微机械元件,其具有可自由地朝向底座移位的部分。 在可变形元件的基部或可移动部分上形成放射性粒子的吸收体,并且在可移动部分的另一个或面对吸收体的基底上形成源于小间隙的源。 放射源发射诸如电子的带电粒子,导致在吸收体上积累电荷,将吸收体和源组合在一起,并随着可变形元件弯曲而存储机械能。 当吸收器和源之间的力足以使吸收器与源有效电接触时,源和吸收器之间的电荷的放电允许可变形元件弹回,释放存储在元件中的机械能。 诸如压电换能器的发电机可以固定到可变形元件以将释放的机械能转换成可用于向电子电路提供功率的电能。
    • 49. 发明授权
    • Betavoltaic apparatus and method
    • Betavoltaic装置和方法
    • US08866152B2
    • 2014-10-21
    • US13510641
    • 2010-11-19
    • Amit LalSteven Tin
    • Amit LalSteven Tin
    • H01L29/15G21H1/06
    • G21H1/06
    • An exemplary thinned-down betavoltaic device includes an N+ doped silicon carbide (SiC) substrate having a thickness between about 3 to 50 microns, an electrically conductive layer disposed immediately adjacent the bottom surface of the SiC substrate; an N− doped SiC epitaxial layer disposed immediately adjacent the top surface of the SiC substrate, a P+ doped SiC epitaxial layer disposed immediately adjacent the top surface of the N− doped SiC epitaxial layer, an ohmic conductive layer disposed immediately adjacent the top surface of the P+ doped SiC epitaxial layer, and a radioisotope layer disposed immediately adjacent the top surface of the ohmic conductive layer. The radioisotope layer can be 63Ni, 147Pm, or 3H. Devices can be stacked in parallel or series. Methods of making the devices are disclosed.
    • 一种示例性的减薄型紫外线器件包括厚度在约3至50微米之间的N +掺杂碳化硅(SiC)衬底,紧邻SiC衬底的底表面设置的导电层; 紧邻SiC衬底的顶表面设置的N掺杂的SiC外延层,紧邻N掺杂的SiC外延层的顶表面设置的P +掺杂的SiC外延层,紧邻邻近顶部表面的欧姆导电层 P +掺杂的SiC外延层,以及紧邻欧姆导电层的顶表面设置的放射性同位素层。 放射性同位素层可以是63Ni,147Pm或3H。 设备可以并联或串联堆叠。 公开了制造装置的方法。