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    • 44. 发明授权
    • Laser element assembly and method of fabricating the same
    • 激光元件组件及其制造方法
    • US4739546A
    • 1988-04-26
    • US32592
    • 1987-04-01
    • Susumu TachibanaNobuo Suzuki
    • Susumu TachibanaNobuo Suzuki
    • H01S5/00B23Q1/48G02B6/36G11B7/22H01S3/00H01S5/022B23Q17/22
    • G11B7/22B23Q1/48Y10T29/49758Y10T29/49769Y10T29/49895Y10T409/303808
    • A laser element assembly used in an optical disk apparatus or others is made up of a laser element for emitting a laser beam and a holder for holding the laser element, and it is required to set the traveling direction of the laser beam accurately to a desired direction when the laser element assembly is incorporated in the optical disk apparatus. In a laser element assembly according to the present invention, the laser emitting surface of the holder is made perpendicular to the traveling direction of the laser beam and is attached to the optical disk apparatus. Thus, the traveling direction of the laser beam can be accurately arranged in relation to a reference plane of the optical disk apparatus. Further, in a method of fabricating a laser element assembly in accordance with the present invention, a laser element is operated so as to emit a laser beam, and a machining operation is performed for the laser emitting surface of a holder in a state that the laser beam is emitted from the laser element, to make the laser emitting surface perpendicular to the traveling direction of the laser beam.
    • 用于光盘装置等的激光元件组件由用于发射激光束的激光元件和用于保持激光元件的保持器构成,并且需要将激光束的行进方向准确地设定为期望的 激光元件组件结合在光盘装置中时的方向。 在根据本发明的激光元件组件中,保持器的激光发射表面垂直于激光束的行进方向制成并附着在光盘装置上。 因此,可以相对于光盘装置的基准面精确地布置激光束的行进方向。 此外,在根据本发明的激光元件组件的制造方法中,激光元件被操作以发射激光束,并且对于保持器的激光发射表面执行加工操作, 从激光元件发射激光束,使激光发射面垂直于激光束的行进方向。
    • 47. 发明授权
    • Liquid developers for electrostatic images
    • 用于静电图像的液体显影剂
    • US4614699A
    • 1986-09-30
    • US631114
    • 1984-07-16
    • Katsugi KitataniMasataka MurataHiroaki YokoyaNobuo Suzuki
    • Katsugi KitataniMasataka MurataHiroaki YokoyaNobuo Suzuki
    • G03G9/12G03G9/135G03G9/02
    • G03G9/1355G03G9/135
    • A liquid developer for electrostatic images which comprises at least one charge controlling agent selected from the group consisting of compounds represented by formula (I) or (II) and complex salts containing a molecular structure shown by the formula (I) or (II): ##STR1## wherein R.sup.1 and R.sup.2 each represents a hydrogen atom, an alkyl and substituted alkyl group, an aryl and a substituted aryl group, an aralkyl group, an aliphatic acyl group, an aromatic acyl group, an alkylsulfonyl group, an arylsulfonyl group, R.sup.1 and R.sup.2 represent identical group or different groups, or R.sup.1 and R.sup.2 together form a heterocyclic ring with the nitrogen atom in the formulae, and when one of R.sup.1 and R.sup.2 represents a hydrogen atom, the other represents a group other than a hydrogen atom;A represents an alkylene group or a substituted alkylene group;X represents a hydrogen atom, a monovalent to tetravalent metal atom, a quaternary ammonium cation, andn represents a positive integer of 1 to 4, andwhen X represents the metal atom defined above and the number represented by n is not sufficient to satisfy the valence of the metal atom represented by X, the residual metal valence bond or bonds are occupied with one or more ligands to form the complex salt.
    • 一种用于静电图像的液体显影剂,其包含至少一种选自由式(I)或(II)表示的化合物的电荷控制剂和含有由式(I)或(II)表示的分子结构的络合盐: (I)其中R1和R2各自表示氢原子,烷基和取代的烷基,芳基和取代的芳基,芳烷基,脂族酰基,芳族酰基 ,烷基磺酰基,芳基磺酰基,R 1和R 2表示相同的基团或不同的基团,或者R 1和R 2在式中与氮原子一起形成杂环,当R 1和R 2之一表示氢原子时, 表示氢原子以外的基团; A表示亚烷基或取代的亚烷基; X表示氢原子,一价四价金属原子,季铵阳离子,n表示1〜4的正整数,X表示上述金属原子,n表示的数不足以满足 由X表示的金属原子的价态,残留的金属价键或键被一个或多个配体占据以形成络合盐。
    • 48. 发明授权
    • Solid state image sensor
    • 固态图像传感器
    • US4591917A
    • 1986-05-27
    • US539424
    • 1983-10-06
    • Nobuo Suzuki
    • Nobuo Suzuki
    • H01L27/148H04N5/335H04N5/341H04N5/3725H04N3/15
    • H04N3/1575H01L27/14831
    • A solid state image sensor is constituted so as to transfer signal charges produced in response to optical irradiation to readout means (22) provided at the end in the direction of alignment of the transfer electrodes with charge transfer channels (30) located below a plurality of transfer electrode array (27) arranged on a semiconductor wafer (20) through an insulating film (32) and to output them from the readout means. The solid state image sensor is provided with means for controlling applied voltage comprising voltage sources (37, 38) of low and high voltages, multi-phase clock source (36) and switch means (34). The applied voltage control means, at a time period of optical irradiation, is operative to apply a voltage to form a deep potential well in transfer channels located below either odd number of transfer electrodes or even number thereof, and form a potential barrier in the transfer channels located below the other electrodes, thereby to store signal charges in the potential well. Further, this applied voltage control means, at a time period of signal readout in a light-interrupted condition, is operative to apply charge transfer multi-phase clocks from transfer electrodes closest to signal readout means sequentially towards those located apart therefrom.
    • 固态图像传感器被构造成将响应于光照射而产生的信号电荷传送到设置在转移电极的排列方向的末端的读出装置(22),其中电荷转移通道(30)位于多个 通过绝缘膜(32)布置在半导体晶片(20)上的转印电极阵列(27),并从读出装置输出。 固态图像传感器设置有用于控制包括低电压和高电压的电压源(37,38),多相时钟源(36)和开关装置(34)的施加电压的装置。 所施加的电压控制装置在光照射的时间周期上可操作地施加电压以在位于传送电极奇数或偶数之下的传输通道中形成深电势井,并在传输中形成势垒 通道位于其他电极下方,从而在信号阱中存储信号电荷。 此外,该施加的电压控制装置在光中断条件下的信号读出的时间周期上可操作以从最靠近信号读出装置的传送电极依次向与其分开的传送电极施加电荷转移多相时钟。
    • 49. 发明授权
    • Solid state image sensing device for enhanced charge carrier accumulation
    • 用于增强载流子累积的固态图像感测装置
    • US4385307A
    • 1983-05-24
    • US201998
    • 1980-10-29
    • Nobuo Suzuki
    • Nobuo Suzuki
    • H01L27/148H04N5/335H04N5/341H04N5/357H04N5/369H04N5/372H01L29/78H01L27/14H01L31/00
    • H01L27/14825
    • A so-called buried channel type solid state image sensing device is formed with a channel layer of the opposite conductivity type in the surface of a semiconductor substrate. An insulating layer is formed on the surface of the semiconductor substrate and spaced apart photo-electrode and a charge transfer electrode are buried in the insulating film and a shift electrode is buried therebetween. A channel layer is provided beneath the photoelectrode and the charge transfer electrode whereas no channel layer is formed beneath the shift electrode. But instead a portion of the surface of the semiconductor substrate is located beneath the shift electrode. Since no channel layer is provided beneath the shift electrode, a sufficient quantity of charge carriers is accumulated in a potential well formed in the channel layer beneath the photoelectrode.
    • 所谓的掩埋沟道型固体摄像装置在半导体衬底的表面形成有相反导电类型的沟道层。 在半导体衬底的表面上形成绝缘层,并且间隔开的光电极和电荷转移电极被埋在绝缘膜中,并且移位电极被埋在其间。 在光电极和电荷转移电极之下设置通道层,而在移位电极之下没有沟道层。 但是,替代地,半导体衬底的表面的一部分位于移位电极之下。 由于在移位电极之下没有设置通道层,所以在形成在光电极下方的沟道层中的势阱中积累足够量的电荷载流子。