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    • 49. 发明申请
    • Method of fabricating vertical structure nitride semiconductor light emitting device
    • 制造垂直结构氮化物半导体发光器件的方法
    • US20060234407A1
    • 2006-10-19
    • US11311169
    • 2005-12-20
    • Dong KimYong KimBok Min
    • Dong KimYong KimBok Min
    • H01L21/00
    • H01L33/0079H01L33/20
    • A method of fabricating a vertical structure nitride semiconductor light emitting device having a cross-sectional shape of a polygon having five or more sides or a circle. A light emitting structure is formed on a sapphire substrate. A metal layer having a plurality of patterns is formed on the light emitting structure. The patterns of the metal layer each have a shape corresponding to a cross-sectional shape of a wanted final light emitting device and are spaced apart by a predetermined distance such that an upper surface of the light emitting structure is partially exposed. The light emitting structure is divided into a plurality of individualized light emitting structures by removing the light emitting structure below the exposed region between the patterns of the metal layer. The sapphire substrate is separated from the light emitting structure by irradiating a laser beam.
    • 一种制造垂直结构的氮化物半导体发光器件的方法,所述垂直结构氮化物半导体发光器件具有五边或多边的多边形的横截面形状。 在蓝宝石衬底上形成发光结构。 在发光结构上形成具有多个图案的金属层。 金属层的图案各自具有与期望的最终发光器件的横截面形状相对应的形状,并且间隔开预定距离,使得发光结构的上表面部分地露出。 通过在金属层的图案之间的暴露区域下方去除发光结构,将发光结构分为多个单独的发光结构。 通过照射激光束将蓝宝石衬底与发光结构分离。