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41. 发明授权

US07560994B1 Systems and methods for cascode switching power amplifiers 有权
标题翻译：共源共栅开关功率放大器的系统和方法
公开(公告)号：US07560994B1
公开(公告)日：2009-07-14
申请号：US11968852
申请日：2008-01-03
申请人： Ockgoo Lee , Jeonghu Han , Kyu Hwan An , Hyungwook Kim , Dong Ho Lee , Ki Seok Yang , Chang-Ho Lee , Haksun Kim , Joy Laskar
发明人： Ockgoo Lee , Jeonghu Han , Kyu Hwan An , Hyungwook Kim , Dong Ho Lee , Ki Seok Yang , Chang-Ho Lee , Haksun Kim , Joy Laskar
IPC分类号： H03F3/04
CPC分类号： H03F3/2176 , H03F1/223 , H03F1/565 , H03F3/193 , H03F2200/108 , H03F2200/387 , H03F2200/451 , H03F2200/541
摘要： Example embodiments of the invention may provide systems and methods for a power amplifier. The systems and methods may include a first common-source device having a first source, a first gate, a first drain, and a first body, where the first source is connected to the first body, and wherein the first gate is connected to an input port. The systems and methods may further include a second common-gate device having a second source, a second gate, a second drain, and a second body, where the second source is connected to the first drain, where the second source is further connected to the second body, and where the second drain is connected to an output port.
摘要翻译：本发明的示例性实施例可以提供功率放大器的系统和方法。系统和方法可以包括具有第一源，第一栅极，第一漏极和第一主体的第一共源器件，其中第一源极连接到第一主体，并且其中第一栅极连接到输入端口。系统和方法还可以包括具有第二源极，第二栅极，第二漏极和第二主体的第二共栅极器件，其中第二源极连接到第一漏极，其中第二源极连接到第二主体，第二排出口连接到输出端口。

42. 发明申请

US20090174477A1 MULTI-SEGMENT PRIMARY AND MULTI-TURN SECONDARY TRANSFORMER FOR POWER AMPLIFIER SYSTEMS 有权
标题翻译：用于功率放大器系统的多段主要和多重二次变压器
公开(公告)号：US20090174477A1
公开(公告)日：2009-07-09
申请号：US11968862
申请日：2008-01-03
申请人： Chang-Ho Lee , Ockgoo Lee , Jeonghu Han , Kyu Hwan An , Hyungwook Kim , Dong Ho Lee , Ki Seok Yang , Haksun Kim , Joy Laskar
发明人： Chang-Ho Lee , Ockgoo Lee , Jeonghu Han , Kyu Hwan An , Hyungwook Kim , Dong Ho Lee , Ki Seok Yang , Haksun Kim , Joy Laskar
IPC分类号： H03F1/00
CPC分类号： H03F1/565 , H01F27/2804 , H03F3/195 , H03F3/211 , H03F3/45475 , H03F2200/387 , H03F2200/391 , H03F2200/399 , H03F2200/402 , H03F2200/451 , H03F2200/541 , H03F2203/45138 , Y10T29/5313
摘要： Embodiments of the invention may provide for power amplifier systems and methods. The systems and methods may include a power amplifier that generates a first differential output signal and a second differential output signal, a primary winding comprised of a plurality of primary segments, where a first end of each primary segment is connected to a first common input port and a second end of each primary segment is connected to a second common input port, where the first common input port is operative to receive the first differential output signal, and where the second common input port is operative to receive the second differential output signal, and a single secondary winding inductively coupled to the plurality of primary segments.
摘要翻译：本发明的实施例可以提供功率放大器系统和方法。系统和方法可以包括产生第一差分输出信号和第二差分输出信号的功率放大器，由多个主要段组成的初级绕组，其中每个主要段的第一端连接到第一公共输入端口并且每个主要段的第二端连接到第二公共输入端口，其中第一公共输入端口用于接收第一差分输出信号，并且其中第二公共输入端口用于接收第二差分输出信号，以及电感耦合到所述多个初级段的单个次级绕组。

43. 发明申请

US20080157181A1 NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080157181A1
公开(公告)日：2008-07-03
申请号：US11964287
申请日：2007-12-26
申请人： Jae Mun Kim , Jae Hyoung Koo , Dong Ho Lee , Kwon Hong , Woo Ri Jeong , Hee Soo Kim , Seung Woo Shin
发明人： Jae Mun Kim , Jae Hyoung Koo , Dong Ho Lee , Kwon Hong , Woo Ri Jeong , Hee Soo Kim , Seung Woo Shin
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L29/42324 , H01L29/40114 , H01L29/513 , H01L29/7881
摘要： A non-volatile memory device and a fabrication method thereof. A high-k layer is formed between nitrogen-containing insulating layers. Accordingly, an interface reaction between an underlying oxide layer and the high-k insulating layer or between the oxide layer and a floating gate or a control gate can be prohibited and the electrical characteristics of the high-k layer can be improved, and a non-volatile memory device with high performance and high reliability can be fabricated.
摘要翻译：一种非易失性存储器件及其制造方法。在含氮绝缘层之间形成高k层。因此，可以禁止下面的氧化物层和高k绝缘层之间或氧化物层与浮动栅极或控制栅极之间的界面反应，并且可以提高高k层的电特性，可以制造具有高性能和高可靠性的易失性存储器件。

44. 发明申请

US20080024381A1 ANTENNA AND MOBILE TERMINAL 有权
标题翻译：天线和移动终端
公开(公告)号：US20080024381A1
公开(公告)日：2008-01-31
申请号：US11747100
申请日：2007-05-10
申请人： O. G. Vendik , I.A. Pakhomov , An Sun Hyun , Kang Jae Jung , Dong Ho Lee
发明人： O. G. Vendik , I.A. Pakhomov , An Sun Hyun , Kang Jae Jung , Dong Ho Lee
IPC分类号： H01Q1/50 , H01Q9/16
CPC分类号： H01Q7/00 , H01Q9/285 , H01Q21/29
摘要： Disclosed are an antenna and a mobile terminal comprising the antenna with the combination of a dipole and a loop.
摘要翻译：公开了一种天线和移动终端，其包括具有偶极和环路的组合的天线。

45. 发明授权

US07312113B2 Method of forming source/drain region of semiconductor device 有权
标题翻译：形成半导体器件的源极/漏极区域的方法
公开(公告)号：US07312113B2
公开(公告)日：2007-12-25
申请号：US11399877
申请日：2006-04-07
申请人： Dong Ho Lee
发明人： Dong Ho Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814
摘要： A method of forming a source/drain region of a semiconductor device includes forming a photoresist pattern through which an NMOS region of a semiconductor substrate is exposed, and then performing an ion implant process to form NMOS LDD regions in the semiconductor substrate of the NMOS region. An ion implant process is performed to form PMOS pocket regions in a PMOS region of the semiconductor substrate. Spacers are formed on sidewalls of a PMOS gate electrode pattern and sidewalls of an NMOS gate electrode pattern, and an ion implant process is performed to form PMOS source/drain regions in the semiconductor substrate in which the PMOS pocket regions are formed. An ion implant process is performed to form NMOS source/drain regions in the semiconductor substrate in which the NMOS LDD regions are formed.
摘要翻译：形成半导体器件的源极/漏极区域的方法包括形成通过其暴露半导体衬底的NMOS区域的光致抗蚀剂图案，然后进行离子注入工艺以在NMOS区域的半导体衬底中形成NMOS LDD区域。执行离子注入工艺以在半导体衬底的PMOS区域中形成PMOS袋区域。间隔件形成在PMOS栅电极图案的侧壁和NMOS栅电极图案的侧壁上，并且执行离子注入工艺以在其中形成PMOS袋区域的半导体衬底中形成PMOS源/漏区。执行离子注入工艺以在其中形成NMOS LDD区的半导体衬底中形成NMOS源极/漏极区。

46. 发明授权

US06706642B2 Method for fabricating semiconductor capacitors 失效
标题翻译：制造半导体电容器的方法
公开(公告)号：US06706642B2
公开(公告)日：2004-03-16
申请号：US10330565
申请日：2002-12-27
申请人： Dong Ho Lee , Jong Woon Park
发明人： Dong Ho Lee , Jong Woon Park
IPC分类号： H01L21302
CPC分类号： H01L28/84 , H01L21/32135 , H01L28/91
摘要： The present invention relates to a method for fabricating semiconductor capacitors, which enables the capacitance of the capacitors to be increased. This method comprises the steps of: forming a cylinder type polycrystalline silicon pattern on a semiconductor substrate; forming an amorphous metal film on the substrate in such a manner that the amorphous metal film covers the polycrystalline silicon pattern; crystallizing the amorphous metal film so as to form grown metal grains and grain boundaries between the metal grains; firstly etching the crystallized metal film by a wet etching process in such a manner that the polycrystalline silicon pattern is selectively exposed due to the difference in the wet etching rate between the metal grains and the grain boundaries; secondly etching the exposed portion of the polycrystalline silicon pattern by a wet etching process so as to form a storage node electrode whose surface has hemispherical grooves; and successively forming a dielectric layer and a plate electrode on the resulting structure in such a manner that they cover the storage node electrode.
摘要翻译：本发明涉及一种制造半导体电容器的方法，其能够增加电容器的电容。该方法包括以下步骤：在半导体衬底上形成圆柱型多晶硅图案; 在所述基板上形成非晶金属膜，使得所述非晶金属膜覆盖所述多晶硅图案; 使无定形金属膜结晶化，形成金属颗粒之间生长的金属颗粒和晶界; 首先通过湿式蚀刻工艺蚀刻结晶的金属膜，使得由于金属颗粒和晶界之间的湿蚀刻速率的差异，多晶硅图案被选择性地暴露; 其次通过湿蚀刻工艺蚀刻多晶硅图案的暴露部分，以形成其表面具有半球形凹槽的存储节点电极; 并且在所得到的结构上依次形成介电层和平板电极，使得它们覆盖存储节点电极。

47. 发明授权

US06567432B1 Wideband multichannel fiber lasers with output power equalization 有权
标题翻译：具有输出功率均衡的宽带多通道光纤激光器
公开(公告)号：US06567432B1
公开(公告)日：2003-05-20
申请号：US09482351
申请日：2000-01-14
申请人： Seung Kwan Kim , Dong Ho Lee , Jae Geun Kim
发明人： Seung Kwan Kim , Dong Ho Lee , Jae Geun Kim
IPC分类号： H01S330
CPC分类号： H01S3/067 , G02B6/2766 , G02B6/29319 , G02B6/2935 , G02B6/29358 , G02B6/29391 , H01S3/06712 , H01S3/0675 , H01S3/06791 , H01S3/10023 , H01S3/1068 , H01S3/108 , H01S2301/04
摘要： A multichannel fiber laser whose wavelength range is expansible to increase the number of lasing channel, and whose channel output powers are equalized, in order to provide a useful multichannel laser source having a wide bandwidth is described. The laser comprises a gain offering means; a gain equalizing means; and a resonating means. In addition, a method for designing the spectral profile of a gain equalizing filter for the purpose of this invention is described.
摘要翻译：描述了波长范围可扩展以增加激光通道数量并且其通道输出功率均衡的多通道光纤激光器，以便提供具有宽带宽的有用的多通道激光源。激光器包括增益提供装置; 增益均衡手段; 和谐振装置。另外，为了本发明的目的，描述了一种用于设计增益均衡滤波器的频谱分布的方法。

48. 发明授权

US5784170A Apparatus for generating quasi equally spaced frequencies using an optical frequency shifter in a multi-channel transmission system 失效
标题翻译：用于在多声道传输系统中使用光学移频器产生准等间隔频率的装置
公开(公告)号：US5784170A
公开(公告)日：1998-07-21
申请号：US646121
申请日：1996-05-07
申请人： Chang Soo Park , Dong Ho Lee
发明人： Chang Soo Park , Dong Ho Lee
IPC分类号： H04J14/00 , H04B10/50 , H04B10/572 , H04J14/02
CPC分类号： H04J14/0224 , H04B10/505 , H04B10/506 , H04B10/572
摘要： The present invention relates to an apparatus for generating quasi equally spaced multi-channel frequencies using a frequency shifter. The optical multi-channel transmission system using OFDM or WDM can be provided with quasi equally spaced(unequally sequential spaced) frequencies on the basis of the functional relation among the frequency differences(n.sub.ij =n.sub.i -n.sub.j (i=j=1,2,3, . . . n)) of any two neighboring channels. Namely, after generating equally spaced frequencies by using a reference resonator, such as a Fiber Fabry Perot(FFP) resonator, each of the equally spaced frequencies is sequentially shifted by a frequency shifter, which generates and controls the quasi equally spaced(unequally sequential spaced) frequencies in order to effectively avoid crosstalk due to FFWM, and fully make use of the transmission bandwidth belonging to the low dispersion region of the optical fiber. the effect of the present invention will be apparent as follows: by easily generating and controlling quasi equally spaced frequencies having a functional relation between two adjacent channels, crosstalk due to Fiber Four Wave Mixing(FFWM) is effectively avoided, and the transmission bandwidth in the region of the low dispersion is fully utilized. Furthermore, the compatibility is easily accomplished.
摘要翻译：本发明涉及一种使用移频器产生准等距多声道频率的装置。基于频差之间的功能关系，可以使用OFDM或WDM的光多通道传输系统提供准等间隔（不等间隔的）频率（nij = ni-nj（i = j = 1,2， 3，...，n））。也就是说，在通过使用参考谐振器（例如光纤法布里珀罗（FFP））谐振器产生等间隔的频率之后，每个等间隔的频率被移频器顺序移位，该移频器产生并控制准等距间隔（不等间隔的）频率，以便有效地避免由于FFWM引起的串扰，并充分利用属于光纤低色散区域的传输带宽。本发明的效果将显而易见：通过容易地产生和控制具有两个相邻通道之间的功能关系的准等间隔的频率，有效地避免了由于光纤四波混频（FFWM）引起的串扰，并且传输带宽低分散的区域被充分利用。此外，容易实现兼容性。

49. 发明授权

US08501436B2 Method for preparation of carbamic acid (R)-1-aryl-2-tetrazolyl-ethyl ester 有权
标题翻译：制备氨基甲酸（R）-1-芳基-2-四唑基乙酯的方法
公开(公告)号：US08501436B2
公开(公告)日：2013-08-06
申请号：US12578709
申请日：2009-10-14
申请人： Sang Chul Lim , Moo Yong Uhm , Nahm Ryune Cho , Dae Won Lee , Ju Young Lee , Hui Ho Kim , Dong Ho Lee , Hyun Seok Lee , Se Il Lee
发明人： Sang Chul Lim , Moo Yong Uhm , Nahm Ryune Cho , Dae Won Lee , Ju Young Lee , Hui Ho Kim , Dong Ho Lee , Hyun Seok Lee , Se Il Lee
IPC分类号： C12P17/10 , C12P1/00
CPC分类号： C07D257/04 , C12P17/10
摘要： Disclosed is a method for the preparation of carbamic acid (R)-1-aryl-2-tetrazolyl-ethyl ester, comprising the asymmetric reduction of arylketone and the carbamation of alcohol.
摘要翻译：公开了一种制备氨基甲酸（R）-1-芳基-2-四唑基乙基酯的方法，其包括芳基酮的不对称还原和醇的氨基甲酸酯化反应。

50. 发明申请

US20110128670A1 HIGH DIELECTRIC CONSTANT CERAMIC-POLYMER COMPOSITES, EMBEDDED CAPACITORS USING THE SAME, AND FABRICATION METHOD THEREOF 有权
标题翻译：高介电常数陶瓷聚合物复合材料，使用其的嵌入式电容器及其制造方法
公开(公告)号：US20110128670A1
公开(公告)日：2011-06-02
申请号：US12629142
申请日：2009-12-02
申请人： Hae June Je , Byung Kook Kim , Min Park , Dong Ho Lee
发明人： Hae June Je , Byung Kook Kim , Min Park , Dong Ho Lee
IPC分类号： H01G4/20 , C04B35/01 , C04B35/462 , C04B35/468
CPC分类号： H01G4/20 , Y10T29/435
摘要： Disclosed are ceramic-polymer composite consisting of aggregates of dielectric ceramic particles and polymer resin, and a fabrication method thereof, the method including aggregating dielectric ceramic particles to create aggregates, melting polymer resin in a solvent to prepare a polymer solution, dispersing the aggregates in the polymer solution to prepare a mixed solution, and hardening the mixed solution to obtain ceramic-polymer composites.
摘要翻译：公开了由介电陶瓷颗粒和聚合物树脂的聚集体组成的陶瓷 - 聚合物复合材料及其制造方法，其包括聚集电介质陶瓷颗粒以产生聚集体，在溶剂中熔融聚合物树脂以制备聚合物溶液，将聚集体分散在聚合物溶液以制备混合溶液，并硬化混合溶液以获得陶瓷 - 聚合物复合材料。

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