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41. 发明授权

US07439142B2 Methods to fabricate MOSFET devices using a selective deposition process 有权
标题翻译：使用选择性沉积工艺制造MOSFET器件的方法
公开(公告)号：US07439142B2
公开(公告)日：2008-10-21
申请号：US11539775
申请日：2006-10-09
申请人： Arkadii V. Samoilov , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
发明人： Arkadii V. Samoilov , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
IPC分类号： H01L21/336
CPC分类号： H01L21/823814 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/28044 , H01L21/28114 , H01L21/823807 , H01L29/165 , H01L29/66242 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/78 , H01L29/7834 , H01L29/7848
摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.
摘要翻译：在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区域的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体，和氢气以在其上沉积第一含硅层。第一含硅层可以被选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被蚀刻掉在衬底的电介质材料的表面上。随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

42. 发明申请

US20080245767A1 Pre-cleaning of substrates in epitaxy chambers 有权
标题翻译：在外延室中预清洗底物
公开(公告)号：US20080245767A1
公开(公告)日：2008-10-09
申请号：US11480134
申请日：2006-06-30
申请人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
发明人： Yihwan Kim , Jean R. Vatus , Lori D. Washington , Arkadii Samoilov , Ali Zojaji
IPC分类号： H01L21/306
CPC分类号： C23C16/0236 , C30B25/02 , C30B29/52
摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.
摘要翻译：公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。然后使用外延沉积在衬底表面上形成外延层。

43. 发明申请

US20080026549A1 METHODS OF CONTROLLING MORPHOLOGY DURING EPITAXIAL LAYER FORMATION 有权
标题翻译：在外延层形成过程中控制形态的方法
公开(公告)号：US20080026549A1
公开(公告)日：2008-01-31
申请号：US11830830
申请日：2007-07-30
申请人： Yihwan Kim , Andrew Lam
发明人： Yihwan Kim , Andrew Lam
IPC分类号： H01L21/20
CPC分类号： H01L21/02381 , C30B25/02 , C30B29/06 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02661
摘要： A first aspect of the invention provides a method of selectively forming an epitaxial layer on a substrate. The method includes heating the substrate to a temperature of less than about 800° C. and employing both silane and dichlorosilane as silicon sources during epitaxial film formation. Numerous other aspects are provided.
摘要翻译：本发明的第一方面提供了一种在衬底上选择性地形成外延层的方法。该方法包括在外延膜形成期间将基板加热至低于约800℃的温度，同时采用硅烷和二氯硅烷作为硅源。提供了许多其他方面。

44. 发明申请

US20060216876A1 SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY 有权
标题翻译：具有替代气体供应的选择性外延工艺
公开(公告)号：US20060216876A1
公开(公告)日：2006-09-28
申请号：US11421156
申请日：2006-05-31
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/84 , H01L21/8238 , H01L21/336 , H01L21/20 , H01L21/31
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834 , H01L29/7848 , Y10S438/933 , Y10S438/969
摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.
摘要翻译：在一个实例中，提出了在衬底表面上外延形成含硅材料的方法，其包括将衬底定位到处理室中。衬底具有单晶表面和至少第二表面，例如非晶表面和/或多晶表面。将衬底暴露于沉积气体，以在第一表面上沉积外延层和在第二表面上沉积多晶层。沉积气体优选地包含硅源和至少第二元素源，例如锗源，碳源和/或其组合。此后，该方法进一步提供将衬底暴露于蚀刻剂气体以蚀刻多晶层和外延层，使得以比外延层更快的速率蚀刻多晶层。该方法还可以包括沉积循环，其包括重复将衬底暴露于沉积和蚀刻剂气体以形成具有预定厚度的含硅材料。

45. 发明申请

US20060115934A1 Selective epitaxy process with alternating gas supply 有权
公开(公告)号：US20060115934A1
公开(公告)日：2006-06-01
申请号：US11001774
申请日：2004-12-01
申请人： Yihwan Kim , Arkadii Samoilov
发明人： Yihwan Kim , Arkadii Samoilov
IPC分类号： H01L21/84 , H01L21/336
CPC分类号： H01L29/165 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834 , H01L29/7848 , Y10S438/933 , Y10S438/969
摘要： In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amorphous surface and/or a polycrystalline surface. The substrate is exposed to a deposition gas to deposit an epitaxial layer on the monocrystalline surface and a polycrystalline layer on the second surface. The deposition gas preferably contains a silicon source and at least a second elemental source, such as a germanium source, a carbon source and/or combinations thereof. Thereafter, the method further provides exposing the substrate to an etchant gas to etch the polycrystalline layer and the epitaxial layer in a manner such that the polycrystalline layer is etched at a faster rate than the epitaxial layer. The method may further include a deposition cycle that includes repeating the exposure of the substrate to the deposition and etchant gases to form a silicon-containing material with a predetermined thickness.

46. 发明授权

US09200367B2 Method and apparatus for gas delivery 有权
公开(公告)号：US09200367B2
公开(公告)日：2015-12-01
申请号：US13191008
申请日：2011-07-26
申请人： Zhiyuan Ye , Yihwan Kim
发明人： Zhiyuan Ye , Yihwan Kim
IPC分类号： C23C16/455 , C23C16/448
CPC分类号： C23C16/4481 , C23C16/45512 , C23C16/45557 , C23C16/45561 , Y10T137/0318 , Y10T137/0329 , Y10T137/0335 , Y10T137/877 , Y10T436/12
摘要： Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.

47. 发明申请

US20130210221A1 SELECTIVE EPITAXIAL GERMANIUM GROWTH ON SILICON-TRENCH FILL AND IN SITU DOPING 有权
标题翻译：选择性外源锗增长在硅胶填料和原位浸渍
公开(公告)号：US20130210221A1
公开(公告)日：2013-08-15
申请号：US13765733
申请日：2013-02-13
申请人： YI-CHIAU HUANG , Jiping Li , Miao Jin , Bingxi Sun Wood , Errol Antonio C. Sanchez , Yihwan Kim
发明人： YI-CHIAU HUANG , Jiping Li , Miao Jin , Bingxi Sun Wood , Errol Antonio C. Sanchez , Yihwan Kim
IPC分类号： H01L21/02
CPC分类号： H01L21/02694 , H01L21/02532 , H01L21/0262 , H01L21/02647 , H01L21/02675
摘要： Methods and apparatus for forming a germanium containing film on a patterned substrate are described. The patterned substrate is a silicon, or silicon containing material, and may have a mask material formed on a surface thereof. The germanium containing material is formed selectively on exposed silicon in the recesses of the substrate, and an overburden of at least 50% is formed on the substrate. The germanium containing layer is thermally treated using pulsed laser radiation, which melts a portion of the overburden, but does not melt the germanium containing material in the recesses. The germanium containing material in the recesses is typically annealed, at least in part, by the thermal treatment. The overburden is then removed.
摘要翻译：描述了在图案化衬底上形成含锗膜的方法和装置。图案化衬底是硅或含硅材料，并且可以在其表面上形成掩模材料。含锗材料在衬底的凹槽中的暴露的硅上选择性地形成，并且在衬底上形成至少50％的覆盖层。使用脉冲激光辐射对含锗层进行热处理，所述脉冲激光辐射熔化上覆层的一部分，但不熔化凹陷中的含锗材料。凹陷中的含锗材料通常通过热处理至少部分退火。然后卸下覆盖层。

48. 发明授权

US08394196B2 Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon 有权
标题翻译：含硅和碳的原位磷掺杂外延层的形成
公开(公告)号：US08394196B2
公开(公告)日：2013-03-12
申请号：US11609826
申请日：2006-12-12
申请人： Yihwan Kim
发明人： Yihwan Kim
IPC分类号： C30B21/04
CPC分类号： H01L29/7848 , H01L21/02529 , H01L21/02576 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834
摘要： Methods for formation epitaxial layers containing silicon and carbon doped with phosphorus are disclosed. The pressure is maintained equal to or above 100 torr during deposition. The methods result in the formation of a film including substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices.
摘要翻译：公开了含有掺杂有磷的硅和碳的外延层的形成方法。在沉积期间压力保持等于或大于100托。该方法导致形成包括取代碳的膜。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。

49. 发明申请

US20120202338A1 EPITAXY OF HIGH TENSILE SILICON ALLOY FOR TENSILE STRAIN APPLICATIONS 有权
标题翻译：用于拉伸应变应变的高强度硅合金外延
公开(公告)号：US20120202338A1
公开(公告)日：2012-08-09
申请号：US13193576
申请日：2011-07-28
申请人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Xuebin Li , Saurabh Chopra , Yihwan Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/0257 , H01L21/02576 , H01L21/0262 , H01L29/1054 , H01L29/78
摘要： Embodiments of the present invention generally relate to methods for forming silicon epitaxial layers on semiconductor devices. The methods include forming a silicon epitaxial layer on a substrate at increased pressure and reduced temperature. The silicon epitaxial layer has a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, and is formed without the addition of carbon. A phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater increases the tensile strain of the deposited layer, and thus, improves channel mobility. Since the epitaxial layer is substantially free of carbon, the epitaxial layer does not suffer from film formation and quality issues commonly associated with carbon-containing epitaxial layers.
摘要翻译：本发明的实施例一般涉及在半导体器件上形成硅外延层的方法。所述方法包括在增加的压力和降低的温度下在衬底上形成硅外延层。硅外延层的磷浓度约为1×1021原子/立方厘米或更大，并且不添加碳形成。大约1×1021原子/立方厘米或更大的磷浓度增加沉积层的拉伸应变，从而提高通道迁移率。由于外延层基本上不含碳，外延层不会受到成膜和通常与含碳外延层相关的质量问题的影响。

50. 发明申请

US20110277934A1 METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER 审中-公开
标题翻译：选择沉积外延层的方法
公开(公告)号：US20110277934A1
公开(公告)日：2011-11-17
申请号：US13191020
申请日：2011-07-26
申请人： Zhiyuan Ye , Saurabh Chopra , Yihwan Kim
发明人： Zhiyuan Ye , Saurabh Chopra , Yihwan Kim
IPC分类号： C23F1/08 , C23C16/00
CPC分类号： H01L21/02532 , C23C16/325 , C23C16/56 , C30B25/04 , C30B25/14 , C30B25/18 , C30B33/12 , H01L21/02381 , H01L21/02538 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L21/3065 , Y10S438/929
摘要： Apparatus for selectively depositing an epitaxial layer are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein; a deposition gas source coupled to the process chamber; an etching gas source coupled to the process chamber, the etching gas source including a hydrogen and halogen gas source and a germanium gas source; an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and an exhaust system coupled to the process chamber to control the pressure in the process chamber.
摘要翻译：本文提供了用于选择性沉积外延层的设备。在一些实施例中，用于处理衬底的设备可以包括其中设置有衬底支撑件的处理室; 耦合到处理室的沉积气体源; 耦合到所述处理室的蚀刻气体源，所述蚀刻气体源包括氢和卤素气体源和锗气体源; 能量控制源，以将基底保持在高达600摄氏度的温度; 以及联接到处理室的排气系统，以控制处理室中的压力。

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