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41. 发明授权

US6155912A Cleaning solution for cleaning a polishing pad used in a chemical-mechanical polishing process 有权
标题翻译：用于清洁化学机械抛光工艺中使用的抛光垫的清洁溶液
公开(公告)号：US6155912A
公开(公告)日：2000-12-05
申请号：US399089
申请日：1999-09-20
申请人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
发明人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
IPC分类号： C11D3/39 , C11D7/06 , C11D7/20 , C11D11/00 , B24B1/00
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/06 , C11D7/20
摘要： The present invention provides a cleaning solution for cleaning a polishing pad used in a chemical-mechanical polishing (CMP) process for polishing the surface of a semiconductor wafer. The cleaning solution comprises a potassium hydroxide (KOH) solution for cleaning off slurry remaining on the surface of the polishing pad, and a hydrogen peroxide (H.sub.2 O.sub.2) solution and ammonia water (NH.sub.4 OH) solution for removing abrasive debris remaining on the surface of the polishing pad after the chemical-mechanical polishing process.
摘要翻译：本发明提供一种用于清洗用于抛光半导体晶片的表面的化学机械抛光（CMP）工艺中使用的抛光垫的清洗溶液。清洁溶液包括用于清除残留在抛光垫表面上的浆料的氢氧化钾（KOH）溶液和用于除去残留在抛光表面上的磨料残渣的过氧化氢（H 2 O 2）溶液和氨水（NH 4 OH）溶液化学机械抛光后的垫。

42. 发明授权

US06139680A Exhaust line of chemical-mechanical polisher 失效
标题翻译：化学机械抛光机排气管
公开(公告)号：US06139680A
公开(公告)日：2000-10-31
申请号：US212371
申请日：1998-12-15
申请人： Chien-Hung Chen , Hsueh-Chung Chen
发明人： Chien-Hung Chen , Hsueh-Chung Chen
IPC分类号： B01D46/00 , B24B37/04 , B24B55/12 , C23F1/02
CPC分类号： B24B55/12 , B01D46/00 , B24B37/04
摘要： An improved exhaust line of a chemical-mechanical polisher will improve polishing performance. A chemical-mechanical polisher is in a polishing chamber, wherein the chemical-mechanical polisher contains a polishing table, a plurality of polishing pads on the polishing table, and a plurality of outlets on the polishing table. A plurality of exhaust lines is connected with the plurality of the outlets, wherein the exhaust lines are used to drive out exhaust gas and sewage generated in the polishing chamber. At least a gas-liquid separating device is connected with the plurality of the exhaust lines, wherein the gas-liquid separating device is used for separation of the exhaust and the sewage. The gas-liquid separating device comprises a sewage collector, a filter, a pump, and a sewage-collecting device. The sewage collector is connected with the plurality of the outlets, wherein the sewage collector is used for collecting the exhaust gas and the sewage driven out through the plurality of outlets. The filter is connected with the top of the gas-liquid separating device. The pump is connected with the filter. The sewage-collecting device is connected with the bottom of the gas-liquid separating device, wherein the sewage-collecting device is used for collecting the sewage.
摘要翻译：化学机械抛光机的改进的排气管线将提高抛光性能。化学机械抛光机在抛光室中，其中化学机械抛光机包含抛光台，抛光台上的多个抛光垫和抛光台上的多个出口。多个排气管路与多个出口连接，其中排气管线用于驱除在抛光室中产生的废气和污水。至少一个气液分离装置与多个排气管连接，其中气液分离装置用于分离废气和污水。气液分离装置包括污水收集器，过滤器，泵和污水收集装置。污水收集器与多个出口连接，其中污水收集器用于收集废气，并通过多个出口排出污水。过滤器与气液分离装置的顶部连接。泵与过滤器连接。污水收集装置与气液分离装置的底部连接，其中污水收集装置用于收集污水。

43. 发明授权

US06110826A Dual damascene process using selective W CVD 失效
标题翻译：使用选择性W CVD的双镶嵌工艺
公开(公告)号：US06110826A
公开(公告)日：2000-08-29
申请号：US092816
申请日：1998-06-08
申请人： Chine-Gie Lou , Hsueh-Chung Chen
发明人： Chine-Gie Lou , Hsueh-Chung Chen
IPC分类号： H01L21/44 , H01L21/768
CPC分类号： H01L21/76876 , H01L21/76844 , H01L21/76879
摘要： A dual damascene process using selective tungsten chemical vapor deposition is provided for forming composite structures for local interconnects comprising line trenches with contact holes, and composite structures for intermetal interconnects comprising line trenches with via holes. It is shown that by forming a seed layer in judiciously selected portions of the dual damascene structure and depositing tungsten selectively in one step, contact holes and via holes can be formed free of voids and key-holes.
摘要翻译：提供了使用选择性钨化学气相沉积的双镶嵌工艺，用于形成包括具有接触孔的线沟槽的局部互连的复合结构，以及用于金属间互连的复合结构，其包括具有通孔的线沟槽。示出了通过在双镶嵌结构的明智选择的部分中形成种子层并且在一个步骤中选择性地沉积钨，可以形成没有空隙和键孔的接触孔和通孔。

44. 发明授权

US6062964A Chemical mechanical polishing apparatus for controlling slurry distribution 有权
标题翻译：化学机械抛光装置，用于控制浆料分布
公开(公告)号：US6062964A
公开(公告)日：2000-05-16
申请号：US393909
申请日：1999-09-10
申请人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
发明人： Hsueh-Chung Chen , Ming-Sheng Yang , Juan-Yuan Wu
IPC分类号： B24B37/11 , B24B57/02 , B24B57/00
CPC分类号： B24B37/11 , B24B57/02
摘要： A chemical mechanical polishing apparatus for controlling slurry distribution is disclosed. The slurry flowing through the mesh before transferring to the polishing pad, the mesh being used to distribute the slurry onto surface of the polishing pad. There are different netting densities over the mesh, achieving the purpose of controlling slurry distribution.
摘要翻译：公开了一种用于控制浆料分布的化学机械抛光装置。在转移到抛光垫之前，浆料流过网状物，该网用于将浆料分配到抛光垫的表面上。在网上有不同的网状密度，达到控制浆料分布的目的。

45. 发明申请

US20130082333A1 MULTI-GATE FIELD-EFFECT TRANSISTORS WITH VARIABLE FIN HEIGHTS 审中-公开
公开(公告)号：US20130082333A1
公开(公告)日：2013-04-04
申请号：US13610385
申请日：2012-09-11
申请人： Hsueh-Chung Chen , Su Chen Fan , Theodorus E. Standaert , Chun-Chen Yeh
发明人： Hsueh-Chung Chen , Su Chen Fan , Theodorus E. Standaert , Chun-Chen Yeh
IPC分类号： H01L27/088
CPC分类号： H01L21/823431 , H01L27/0886
摘要： Multi-gate devices and methods of their fabrication are disclosed. A multi-gate device can include a gate structure and a plurality of fins. The gate structure envelops a plurality of surfaces of the fins, which are directly on a substrate that is composed of a semiconducting material. Each of the fins provides a channel between a respective source and a respective drain, is composed of the semiconducting material and is doped. A first fin of the plurality of fins has a first height that is different from a second height of a second fin of the plurality of fins such that drive currents of the first and second fins are different. Further, the first and second fins form a respective cohesive structure of the semiconducting material with the substrate. In addition, surfaces of the substrate that border the fins are disposed at a same vertical position.

46. 发明申请

US20120098133A1 STRUCTURE AND METALLIZATION PROCESS FOR ADVANCED TECHNOLOGY NODES 有权
标题翻译：高级技术人员的结构和金属化过程
公开(公告)号：US20120098133A1
公开(公告)日：2012-04-26
申请号：US12910075
申请日：2010-10-22
申请人： CHIH-CHAO YANG , Hsueh-Chung Chen
发明人： CHIH-CHAO YANG , Hsueh-Chung Chen
IPC分类号： H01L23/482 , H01L21/31 , H01L21/306 , H01L21/768
CPC分类号： H01L21/321 , H01L21/02304 , H01L21/76852 , H01L21/76886
摘要： The problem of poor adherence of a dielectric coating on a patterned metal structure can be solved by forming an adhesion layer on exposed surfaces of such metal structure prior to deposition of such dielectric. According to an embodiment, the invention provides a method to form a self-aligned adhesion layer on the surface of metal interconnect structure within an integrated circuit by exposing the metal structure to a controlled atmosphere and a flow of nitrogen-containing gas.
摘要翻译：可以通过在沉积这种电介质之前在这种金属结构的暴露表面上形成粘合层来解决图案化金属结构上的电介质涂层粘附性差的问题。根据一个实施例，本发明提供了一种通过将金属结构暴露于受控气氛和含氮气体的流动来在集成电路内的金属互连结构的表面上形成自对准粘附层的方法。

47. 发明授权

US07803713B2 Method for fabricating air gap for semiconductor device 有权
标题翻译：制造半导体器件气隙的方法
公开(公告)号：US07803713B2
公开(公告)日：2010-09-28
申请号：US11533809
申请日：2006-09-21
申请人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
发明人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7682 , H01L21/0206
摘要： A method for fabricating an interconnect structure in a semiconductor device. A masking layer is formed on a dielectric layer formed on a substrate, having at least one opening. The opening is transferred into the dielectric layer. A Plasma stripping process is performed to remove the masking layer, such that a damaged sidewall portion of the dielectric layer surrounding the opening therein is formed. The opening in the dielectric layer is filled with a conductive element. The damaged sidewall portion of the dielectric layer is removed to form a gap between the dielectric layer and the conductive element, wherein substances from removal of the damaged sidewall portion of the dielectric layer are formed on the conductive element. The substances are removed using a citric acid solution.
摘要翻译：一种在半导体器件中制造互连结构的方法。在形成在基板上的电介质层上形成有至少一个开口的掩模层。开口转移到电介质层中。进行等离子体剥离处理以去除掩模层，从而形成围绕其中的开口的电介质层的受损侧壁部分。电介质层中的开口填充有导电元件。去除电介质层损坏的侧壁部分，以形成电介质层和导电元件之间的间隙，其中去除导电元件上介质层损坏的侧壁部分的物质。使用柠檬酸溶液除去物质。

48. 发明授权

US07615841B2 Design structure for coupling noise prevention 有权
标题翻译：耦合噪声预防的设计结构
公开(公告)号：US07615841B2
公开(公告)日：2009-11-10
申请号：US11119868
申请日：2005-05-02
申请人： Hsien-Wei Chen , Hsueh-Chung Chen
发明人： Hsien-Wei Chen , Hsueh-Chung Chen
IPC分类号： H01L23/544
CPC分类号： H01L23/5225 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure for preventing coupling noise in integrated circuits and a method of forming the same are provided. The semiconductor structure includes a signal-grounded seal ring. The seal ring includes a plurality of metal lines, each in a respective metal layer and surrounding a circuit region of the semiconductor chip, a plurality of vias connecting respective metal lines, and a plurality of dielectric layers isolating each metal layer from any other metal layers. The seal ring may further include additional seal rings formed inside or outside the seal ring. The semiconductor structure may include laser fuses and protective rings. The protective rings are preferably signal grounded. Cross talk between sub circuits in a chip can be reduced by forming a seal ring extension between the sub circuits.
摘要翻译：提供了一种用于防止集成电路中的耦合噪声的半导体结构及其形成方法。半导体结构包括信号接地密封环。密封环包括多个金属线，各自在相应的金属层中并且围绕半导体芯片的电路区域，连接相应的金属线的多个通孔以及将每个金属层与任何其它金属层隔离的多个电介质层。密封环还可以包括形成在密封环内部或外部的附加密封环。半导体结构可以包括激光熔丝和保护环。保护环最好是信号接地。可以通过在子电路之间形成密封环延伸来减少芯片中的子电路之间的串扰。

49. 发明授权

US07553736B2 Increasing dielectric constant in local regions for the formation of capacitors 有权
标题翻译：在局部区域增加介电常数以形成电容器
公开(公告)号：US07553736B2
公开(公告)日：2009-06-30
申请号：US11486891
申请日：2006-07-13
申请人： Hsien-Wei Chen , Hao-Yi Tsai , Hsueh-Chung Chen
发明人： Hsien-Wei Chen , Hao-Yi Tsai , Hsueh-Chung Chen
IPC分类号： H01L21/20
CPC分类号： H01L21/31058
摘要： A method for increasing capacitances of capacitors and the resulting integrated structure are provided. The method includes providing a substrate, forming a low-k dielectric layer over the substrate wherein the low-k dielectric layer includes a capacitor region and a non-capacitor region, forming a capacitor in the capacitor region, forming a masking layer which masks the non-capacitor region while leaving the capacitor region exposed, performing a local treatment to increase a k value of the low-k dielectric layer in the capacitor region, and removing the masking layer.
摘要翻译：提供了一种用于增加电容器的电容的方法和所得到的集成结构。该方法包括提供衬底，在衬底上形成低k电介质层，其中低k电介质层包括电容器区域和非电容器区域，在电容器区域中形成电容器，形成屏蔽层非电容器区域，同时使电容器区域露出，进行局部处理以增加电容器区域中的低k电介质层的ak值，并且去除掩模层。

50. 发明授权

US07348672B2 Interconnects with improved reliability 有权
标题翻译：互连具有改进的可靠性
公开(公告)号：US07348672B2
公开(公告)日：2008-03-25
申请号：US11175329
申请日：2005-07-07
申请人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
发明人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53238 , H01L21/76834 , H01L21/76843 , H01L23/5283 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： An interconnect architecture with improved reliability. An interconnect with rounded top corners is inlaid in a dielectric layer. A filler borders the interconnect along the corners of the interconnect.
摘要翻译：具有提高可靠性的互连架构。具有圆形顶角的互连嵌入介电层。填充物沿着互连的角落边界。

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