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41. 发明授权

US08768040B2 Substrate identification and tracking through surface reflectance 有权
标题翻译：基板识别和跟踪通过表面反射率
公开(公告)号：US08768040B2
公开(公告)日：2014-07-01
申请号：US13006545
申请日：2011-01-14
申请人： Benjamin Riordon , Russell J. Low
发明人： Benjamin Riordon , Russell J. Low
IPC分类号： G06K9/00
CPC分类号： H01L31/0682 , G06K9/00577 , H01L31/1876 , Y02E10/547 , Y02P70/521
摘要： A method of identifying individual silicon substrates, and particularly solar cells, is disclosed. Every solar cell possesses a unique set of optical properties. The method identifies these properties and stores them in a database, where they can be associated to a particular solar cell. Unlike conventional tracking techniques, the present method requires no dedicated space on the surface of the silicon substrate. This method allows substrates to be tracked through the manufacturing process, as well as throughout the life of the substrate.
摘要翻译：公开了一种识别单个硅衬底，特别是太阳能电池的方法。每个太阳能电池都具有独特的光学特性。该方法识别这些属性并将其存储在数据库中，并将其与特定的太阳能电池相关联。与传统跟踪技术不同，本方法不需要硅衬底表面上的专用空间。该方法允许通过制造过程以及在基板的整个寿命期间跟踪基板。

42. 发明授权

US08685846B2 Technique for processing a substrate 失效
标题翻译：加工基材的技术
公开(公告)号：US08685846B2
公开(公告)日：2014-04-01
申请号：US12695729
申请日：2010-01-28
申请人： Russell J. Low , William T. Weaver , Nicholas P. T. Bateman , Atul Gupta
发明人： Russell J. Low , William T. Weaver , Nicholas P. T. Bateman , Atul Gupta
IPC分类号： H01L21/425
CPC分类号： H01L21/266 , H01J37/09 , H01J37/3171 , H01J2237/0458 , H01J2237/31711 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.
摘要翻译：公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。该方法可以包括离子注入在离子源的下游设置的离子，其离子在离子源中产生; 以及将掩模的第一部分设置在所述基板的前面以将所述掩模的所述第一部分暴露于所述离子，所述掩模由所述第一和第二掩模保持器支撑，所述掩模还包括缠绕在所述第一掩模保持器中的第二部分。

43. 发明授权

US08598547B2 Handling beam glitches during ion implantation of workpieces 有权
标题翻译：在离子植入工件期间处理光束毛刺
公开(公告)号：US08598547B2
公开(公告)日：2013-12-03
申请号：US13170815
申请日：2011-06-28
申请人： Russell J. Low , Atul Gupta , William T. Weaver
发明人： Russell J. Low , Atul Gupta , William T. Weaver
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01J37/20 , G21K5/10 , H01J37/304 , H01J37/3045 , H01J37/3171 , H01J2237/20285 , H01J2237/31703 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.
摘要翻译：可以补偿工件（例如太阳能电池）的离子注入期间的毛刺。在一种情况下，在第一速度的第一次通过期间植入工件。该第一次通过导致工件中不均匀剂量的区域。然后在第二次通过期间以第二速度植入工件。第二速度与第一速度不同。第二速度可以对应于整个工件或者对应于工件中不均匀剂量的区域。

44. 发明授权

US08461030B2 Apparatus and method for controllably implanting workpieces 有权
公开(公告)号：US08461030B2
公开(公告)日：2013-06-11
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

45. 发明申请

US20120181443A1 MASK HEALTH MONITOR USING A FARADAY PROBE 失效
标题翻译：使用FARADAY PROBE的MASK健康监护仪
公开(公告)号：US20120181443A1
公开(公告)日：2012-07-19
申请号：US13428682
申请日：2012-03-23
申请人： Benjamin B. RIORDON , Nicholas P.T. Bateman , William T. Weaver , Russell J. Low
发明人： Benjamin B. RIORDON , Nicholas P.T. Bateman , William T. Weaver , Russell J. Low
IPC分类号： G01T1/17
CPC分类号： H01J37/3171 , H01J2237/24507 , H01J2237/24528 , H01J2237/31711 , H01L21/26513 , H01L21/2658 , H01L21/266 , H01L31/0288 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
摘要翻译：在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。离子电流测量装置通过离子束平移。使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

46. 发明申请

US20120101742A1 METHOD AND SYSTEM FOR IN-SITU MONITORING OF CATHODE ERSOSION AND PREDICTING CATHODE LIFETIME 有权
标题翻译：阴离子渗透和预测阴茎生物的现场监测方法与系统
公开(公告)号：US20120101742A1
公开(公告)日：2012-04-26
申请号：US12912312
申请日：2010-10-26
申请人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
发明人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
IPC分类号： G06F19/00
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source comprises a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method comprises receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译：控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率。确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。另一种方法包括：在第一配置中接收用于阴极操作的最小源极偏置功率值，测量第一配置中阴极的源偏置功率的降低率，以及基于最小源计算阴极的寿命偏置功率和源偏置功率的降低率。

47. 发明申请

US20120043712A1 MECHANISM AND METHOD FOR ALIGNING A WORKPIECE TO A SHADOW MASK 审中-公开
标题翻译：将工件对准阴影掩模的机制和方法
公开(公告)号：US20120043712A1
公开(公告)日：2012-02-23
申请号：US12858131
申请日：2010-08-17
申请人： William Weaver , Russell J. Low , Steven M. Anella , Robert J. Mitchell
发明人： William Weaver , Russell J. Low , Steven M. Anella , Robert J. Mitchell
IPC分类号： H01L21/68 , B23Q3/00
CPC分类号： H01J37/20 , H01J37/3171 , H01J37/32412 , H01J2237/20207 , H01J2237/31711 , Y10T29/49895
摘要： A workpiece support is disclosed in which the platen, and thus the workpiece, can be tilted about at least two axis, which allows gravity to align the workpiece with a shadow mask in two orthogonal directions. In some embodiments, the workpiece support utilizes an axis of rotation that is orthogonal to the surface of the workpiece, in conjunction with a second axis that is parallel to the surface of the workpiece. Additionally, a method of aligning the workpiece using this workpiece support is also disclosed. Further, the workpiece support can be utilized to remove the workpiece from the support after implantation is completed.
摘要翻译：公开了一种工件支撑件，其中压板以及因此工件可以围绕至少两个轴线倾斜，这允许重力在两个正交方向上将工件与荫罩对准。在一些实施例中，工件支撑件与平行于工件表面的第二轴线结合使用与工件表面正交的旋转轴线。此外，还公开了使用该工件支撑件对准工件的方法。此外，可以利用工件支撑件在植入完成之后将工件从支撑件移除。

48. 发明申请

US20110089342A1 TECHNIQUES FOR PROCESSING A SUBSTRATE 有权
标题翻译：加工基材的技术
公开(公告)号：US20110089342A1
公开(公告)日：2011-04-21
申请号：US12756020
申请日：2010-04-07
申请人： Kevin M. Daniels , Russell J. Low , Benjamin B. Riordon
发明人： Kevin M. Daniels , Russell J. Low , Benjamin B. Riordon
IPC分类号： G21K5/10 , B32B3/30
CPC分类号： H01L21/266 , H01J37/3171 , H01J2237/024 , H01J2237/045 , H01J2237/31711 , H01L31/18 , Y10T428/2457
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise a first base; and a plurality of fingers spaced apart from one another to define one or more gaps.
摘要翻译：本文中公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。掩模可以并入基板处理系统中，例如离子注入系统。掩模可以包括第一基底; 以及彼此间隔开的多个手指以限定一个或多个间隙。

49. 发明申请

US20110031408A1 MASK HEALTH MONITOR USING A FARADAY PROBE 失效
标题翻译：使用FARADAY PROBE的MASK健康监护仪
公开(公告)号：US20110031408A1
公开(公告)日：2011-02-10
申请号：US12845665
申请日：2010-07-28
申请人： Benjamin B. Riordon , Nicholas P.T. Bateman , William T. Weaver , Russell J. Low
发明人： Benjamin B. Riordon , Nicholas P.T. Bateman , William T. Weaver , Russell J. Low
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , H01J2237/24507 , H01J2237/24528 , H01J2237/31711 , H01L21/26513 , H01L21/2658 , H01L21/266 , H01L31/0288 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
摘要翻译：在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。离子电流测量装置通过离子束平移。使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。

50. 发明授权

US07821213B2 Techniques for controlling a charged particle beam 有权
标题翻译：用于控制带电粒子束的技术
公开(公告)号：US07821213B2
公开(公告)日：2010-10-26
申请号：US11865336
申请日：2007-10-01
申请人： Piotr R. Lubicki , Russell J. Low , Stephen E. Krause , Frank Sinclair
发明人： Piotr R. Lubicki , Russell J. Low , Stephen E. Krause , Frank Sinclair
IPC分类号： H05H9/00
CPC分类号： H05H7/04 , H01J37/08 , H01J37/3171 , H01J2237/002 , H01J2237/04735 , H01J2237/304
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an accelerator column, which may comprise a plurality of electrodes. The plurality of electrodes may have apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a voltage grading system. The voltage grading system may comprise a first fluid reservoir and a first fluid circuit. The first fluid circuit may have conductive connectors connecting to at least one of the plurality of electrodes. The voltage grading system may further comprise fluid in the first fluid circuit. The fluid may have an electrical resistance.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速器柱，其可以包括多个电极。多个电极可以具有带电粒子束可以通过的孔。带电粒子加速/减速系统还可以包括电压分级系统。电压分级系统可以包括第一流体储存器和第一流体回路。第一流体回路可以具有连接到多个电极中的至少一个的导电连接器。电压分级系统还可以包括第一流体回路中的流体。流体可能具有电阻。

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