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41. 发明授权

US08492289B2 Barrier layer formation for metal interconnects through enhanced impurity diffusion 有权
标题翻译：金属互连的阻挡层形成通过增强的杂质扩散
公开(公告)号：US08492289B2
公开(公告)日：2013-07-23
申请号：US12882500
申请日：2010-09-15
申请人： Daniel C. Edelstein , Takeshi Nogami , Hosadurga K. Shobha
发明人： Daniel C. Edelstein , Takeshi Nogami , Hosadurga K. Shobha
IPC分类号： H01L21/31
CPC分类号： H01L23/53238 , H01L21/76832 , H01L21/76834 , H01L21/76849 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a barrier layer for metal interconnects of an integrated circuit device includes forming a first cap layer over a top surface of a conductive line of the integrated circuit device in a manner that facilitates a controllable dose of oxygen provided to the top surface of the conductive line, the conductive line comprising a metal formed over a seed layer that is an impurity alloy of the metal; and annealing the integrated circuit device so as to combine diffused impurity atoms of the seed layer with the controllable dose of oxygen, thereby forming an impurity oxide layer at an interface between the first cap layer and the top surface of the conductive line.
摘要翻译：形成用于集成电路器件的金属互连的势垒层的方法包括在集成电路器件的导电线的顶表面之上形成第一帽层，以便于提供给顶部表面的氧的可控剂量所述导电线包括在作为所述金属的杂质合金的种子层上形成的金属; 以及对所述集成电路器件进行退火以将所述种子层的扩散杂质原子与可控量的氧组合，从而在所述第一覆盖层和所述导电线的顶表面之间的界面处形成杂质氧化物层。

42. 发明授权

US08383507B2 Method for fabricating air gap interconnect structures 有权
标题翻译：气隙互连结构的制造方法
公开(公告)号：US08383507B2
公开(公告)日：2013-02-26
申请号：US13351370
申请日：2012-01-17
申请人： Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
发明人： Kaushik Chanda , Cathryn J. Christiansen , Daniel C. Edelstein , Satyanarayana V. Nitta , Son V. Nguyen , Shom Ponoth , Hosadurga Shobha
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L23/5222 , H01L21/7682 , H01L21/76834 , H01L21/76849 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.
摘要翻译：金属互连结构包括至少一对金属线，它们之间的腔，以及位于腔的至少一部分壁上的介电金属扩散阻挡层。在一对金属线之间形成空腔之后，在空腔的暴露表面上形成介电金属扩散阻挡层。在一对金属线之上形成介电材料层以封装空腔。电介质金属扩散阻挡层防止金属和杂质从一个金属线扩散到另一个金属线，反之亦然，从而防止一对金属线之间的电短路。

43. 发明申请

US20120326311A1 ENHANCED DIFFUSION BARRIER FOR INTERCONNECT STRUCTURES 有权
标题翻译：用于互连结构的增强扩展障碍
公开(公告)号：US20120326311A1
公开(公告)日：2012-12-27
申请号：US13164929
申请日：2011-06-21
申请人： Chih-Chao Yang , Daniel C. Edelstein , Steven E. Molis
发明人： Chih-Chao Yang , Daniel C. Edelstein , Steven E. Molis
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/52 , H01L21/3105 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L21/76846 , H01L21/76867 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Alternative methods of fabricating an interconnect structure in which an enhanced diffusion barrier including an in-situ formed metal nitride liner formed between an interconnect dielectric material and an overlying metal diffusion barrier liner are provided. In one embodiment, the method includes forming at least one opening into an interconnect dielectric material. A nitrogen enriched dielectric surface layer is formed within exposed surfaces of the interconnect dielectric material utilizing thermal nitridation. A metal diffusion barrier liner is formed on the nitrogen enriched dielectric surface. During and/or after the formation of the metal diffusion barrier liner, a metal nitride liner forms in-situ in a lower region of the metal diffusion barrier liner. A conductive material is then formed on the metal diffusion barrier liner. The conductive material, the metal diffusion barrier liner and the metal nitride liner that are located outside of the at least one opening are removed to provide a planarized conductive material, a planarized metal diffusion barrier liner and a planarized metal nitride liner, each of which includes an upper surface that is co-planar with the nitrogen enriched dielectric surface layer of the interconnect dielectric material.
摘要翻译：提供制造互连结构的替代方法，其中提供包括在互连电介质材料和上覆金属扩散阻挡衬里之间形成的原位形成的金属氮化物衬垫的增强扩散屏障。在一个实施例中，该方法包括在互连电介质材料中形成至少一个开口。利用热氮化在互连电介质的暴露表面内形成富氮介电表面层。在富氮电介质表面上形成金属扩散阻挡衬垫。在形成金属扩散阻挡衬里期间和/或之后，金属氮化物衬垫在金属扩散阻挡衬里的下部区域中原位形成。然后在金属扩散阻挡衬里上形成导电材料。移除位于至少一个开口外侧的导电材料，金属扩散阻挡衬垫和金属氮化物衬垫，以提供平坦化的导电材料，平坦化的金属扩散阻挡衬垫和平坦化的金属氮化物衬垫，每个衬垫包括与互连电介质材料的富氮介电表面层共平面的上表面。

44. 发明授权

US08247904B2 Interconnection between sublithographic-pitched structures and lithographic-pitched structures 有权
标题翻译：亚光刻凹凸结构与平版印刷结构之间的互连
公开(公告)号：US08247904B2
公开(公告)日：2012-08-21
申请号：US12540759
申请日：2009-08-13
申请人： Sarunya Bangsaruntip , Daniel C. Edelstein , William D. Hinsberg , Ho-Cheol Kim , Steven Koester , Paul M. Soloman
发明人： Sarunya Bangsaruntip , Daniel C. Edelstein , William D. Hinsberg , Ho-Cheol Kim , Steven Koester , Paul M. Soloman
IPC分类号： H01L23/48
CPC分类号： H01L21/76816 , H01L21/31144 , H01L21/76838 , H01L21/76897 , H01L2924/0002 , H01L2924/00
摘要： An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different.
摘要翻译：形成了亚光刻间距结构和光刻凸出结构之间的互连。具有亚光刻间距的多条导线可以被光刻图案化并且沿着与多根导线的长度方向成小于45度的角度的切割。或者，与均聚物混合的共聚物可以放置在凹陷区域中并自对准以形成在恒定宽度区域具有亚光刻间距的多条导线，以及在梯形区域处的相邻线之间的光刻尺寸。或者，具有亚光刻间距的第一多个导线和具有光刻间距的第二多个导线可以形成在相同的水平或不同的位置。

45. 发明授权

US08232645B2 Interconnect structures, design structure and method of manufacture 有权
标题翻译：互连结构，设计结构和制造方法
公开(公告)号：US08232645B2
公开(公告)日：2012-07-31
申请号：US12191522
申请日：2008-08-14
申请人： Chih-Chao Yang , Kaushik Chanda , Daniel C. Edelstein
发明人： Chih-Chao Yang , Kaushik Chanda , Daniel C. Edelstein
IPC分类号： H01L23/48
CPC分类号： H01L23/5329 , H01L21/76846 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is provided that substantially eliminates electro-migration (EM) damage, a design structure and a method of manufacturing. The metal interconnect is formed in a dielectric material. A metal cap is selective to the metal interconnect. The metal cap includes RuX, where X is at Boron, Phosphorous or a combination of Boron and Phosphorous.
摘要翻译：提供了一种互连结构，其基本上消除了电迁移（EM）损伤，设计结构和制造方法。金属互连形成在电介质材料中。金属盖对金属互连有选择性。金属盖包括RuX，其中X在硼，磷或硼和磷的组合。

46. 发明授权

US07964966B2 Via gouged interconnect structure and method of fabricating same 有权
标题翻译：通过沟槽互连结构及其制造方法
公开(公告)号：US07964966B2
公开(公告)日：2011-06-21
申请号：US12494564
申请日：2009-06-30
申请人： Chih-Chao Yang , Daniel C. Edelstein , Theodorus E. Standaert
发明人： Chih-Chao Yang , Daniel C. Edelstein , Theodorus E. Standaert
IPC分类号： H01L23/48 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76808 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a gouging feature at the bottom of a via opening and a method of forming the same are provided. The method of the present invention does not disrupt the coverage of the deposited trench diffusion barrier in a line opening that is located atop the via opening, and/or does not introduce damages caused by creating a gouging feature at the bottom of the via opening by sputtering into the interconnect dielectric material that includes the via and line openings. Such an interconnect structure is achieved by providing a gouging feature in the bottom of the via opening by first forming the line opening within the interconnect dielectric, followed by forming the via opening and then the gouging feature.
摘要翻译：提供一种包括通孔开口底部的气刨结构的互连结构及其形成方法。本发明的方法不会破坏位于通孔开口顶部的线路开口中的沉积的沟槽扩散阻挡层的覆盖和/或不引起由于在通孔开口的底部产生气流特征而造成的损害溅射到包括通孔和线路开口的互连电介质材料中。通过首先在互连电介质中形成线路开口，然后形成通孔开口，然后形成沟槽特征，在通孔开口的底部提供气泡特征来实现这种互连结构。

47. 发明授权

US07956463B2 Large grain size conductive structure for narrow interconnect openings 有权
标题翻译：用于窄互连开口的大粒度导电结构
公开(公告)号：US07956463B2
公开(公告)日：2011-06-07
申请号：US12560878
申请日：2009-09-16
申请人： Chih-Chao Yang , Daniel C. Edelstein , Takeshi Nogami , Stephen M. Rossnagel
发明人： Chih-Chao Yang , Daniel C. Edelstein , Takeshi Nogami , Stephen M. Rossnagel
IPC分类号： H01L23/48
CPC分类号： H01L21/76871 , H01L21/76846 , H01L21/76868 , H01L21/76883
摘要： An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer, a grain growth promotion layer, an agglomerated plating seed layer, an optional second plating seed layer a conductive structure. The conductive structure which includes a metal-containing conductive material, typically Cu, has a bamboo microstructure and an average grain size of larger than 0.05 microns. In some embodiments, the conductive structure includes conductive grains that have a (111) crystal orientation.
摘要翻译：提供具有降低的电阻的互连结构和形成这种互连结构的方法。互连结构包括其中包括至少一个开口的电介质材料。至少一个开口填充有可选的阻挡扩散层，晶粒生长促进层，聚集的电镀种子层，任选的第二电镀种子层，导电结构。包含含金属的导电材料（通常为Cu）的导电结构具有竹结构，平均晶粒尺寸大于0.05微米。在一些实施例中，导电结构包括具有（111）晶体取向的导电晶粒。

48. 发明申请

US20110062587A1 LARGE GRAIN SIZE CONDUCTIVE STRUCTURE FOR NARROW INTERCONNECT OPENINGS 有权
标题翻译：用于窄幅互连开口的大粒度导电结构
公开(公告)号：US20110062587A1
公开(公告)日：2011-03-17
申请号：US12560878
申请日：2009-09-16
申请人： Chih-Chao Yang , Daniel C. Edelstein , Takeshi Nogami , Stephen M. Rossnagel
发明人： Chih-Chao Yang , Daniel C. Edelstein , Takeshi Nogami , Stephen M. Rossnagel
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/76871 , H01L21/76846 , H01L21/76868 , H01L21/76883
摘要： An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer, a grain growth promotion layer, an agglomerated plating seed layer, an optional second plating seed layer a conductive structure. The conductive structure which includes a metal-containing conductive material, typically Cu, has a bamboo microstructure and an average grain size of larger than 0.05 microns. In some embodiments, the conductive structure includes conductive grains that have a (111) crystal orientation.
摘要翻译：提供具有降低的电阻的互连结构和形成这种互连结构的方法。互连结构包括其中包括至少一个开口的电介质材料。至少一个开口填充有可选的阻挡扩散层，晶粒生长促进层，聚集的电镀种子层，任选的第二电镀种子层，导电结构。包含含金属的导电材料（通常为Cu）的导电结构具有竹结构，平均晶粒尺寸大于0.05微米。在一些实施例中，导电结构包括具有（111）晶体取向的导电晶粒。

49. 发明申请

US20110003473A1 STRUCTURE FOR METAL CAP APPLICATIONS 有权
标题翻译：金属盖应用结构
公开(公告)号：US20110003473A1
公开(公告)日：2011-01-06
申请号：US12881806
申请日：2010-09-14
申请人： Chih-Chao Yang , Daniel C. Edelstein , Keith Kwong Hon Wong , Haining Yang
发明人： Chih-Chao Yang , Daniel C. Edelstein , Keith Kwong Hon Wong , Haining Yang
IPC分类号： H01L21/768
CPC分类号： H01L21/76885 , H01L21/76826 , H01L21/76834 , H01L21/7684 , H01L21/76849
摘要： An interconnect structure is provided in which the conductive features embedded within a dielectric material are capped with a metallic capping layer, yet no metallic residue is present on the surface of the dielectric material in the final structure. The inventive interconnect structure has improved dielectric breakdown strength as compared to prior art interconnect structures. Moreover, the inventive interconnect structure has better reliability and technology extendibility for the semiconductor industry. The inventive interconnect structure includes a dielectric material having at least one metallic capped conductive feature embedded therein, wherein a top portion of said at least one metallic capped conductive feature extends above an upper surface of the dielectric material. A dielectric capping layer is located on the dielectric material and it encapsulates the top portion of said at least one metallic capped conductive feature that extends above the upper surface of dielectric material.
摘要翻译：提供了一种互连结构，其中嵌入电介质材料内的导电特征被金属覆盖层封盖，但在最终结构中绝缘材料表面上没有金属残留物。与现有技术的互连结构相比，本发明的互连结构具有改善的介电击穿强度。此外，本发明的互连结构对于半导体工业具有更好的可靠性和技术可扩展性。本发明的互连结构包括具有嵌入其中的至少一个金属封盖的导电特征的电介质材料，其中所述至少一个金属封端的导电特征的顶部在电介质材料的上表面上方延伸。电介质覆盖层位于电介质材料上，并且封装在电介质材料的上表面上方延伸的所述至少一个金属封盖导电特征的顶部。

50. 发明申请

US20100327446A1 VIA GOUGED INTERCONNECT STRUCTURE AND METHOD OF FABRICATING SAME 有权
标题翻译：通过GOGGED INTERCONNECT结构及其制作方法
公开(公告)号：US20100327446A1
公开(公告)日：2010-12-30
申请号：US12494564
申请日：2009-06-30
申请人： Chih-Chao Yang , Daniel C. Edelstein , Theodorus E. Standaert
发明人： Chih-Chao Yang , Daniel C. Edelstein , Theodorus E. Standaert
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure including a gouging feature at the bottom of a via opening and a method of forming the same are provided. The method of the present invention does not disrupt the coverage of the deposited trench diffusion barrier in a line opening that is located atop the via opening, and/or does not introduce damages caused by creating a gouging feature at the bottom of the via opening by sputtering into the interconnect dielectric material that includes the via and line openings. Such an interconnect structure is achieved by providing a gouging feature in the bottom of the via opening by first forming the line opening within the interconnect dielectric, followed by forming the via opening and then the gouging feature.
摘要翻译：提供一种包括通孔开口底部的气刨结构的互连结构及其形成方法。本发明的方法不会破坏位于通孔开口顶部的线路开口中沉积的沟槽扩散阻挡层的覆盖和/或不引起由通孔开口底部产生气流特征而导致的损伤溅射到包括通孔和线路开口的互连电介质材料中。通过首先在互连电介质中形成线路开口，然后形成通孔开口，然后形成沟槽特征，在通孔开口的底部提供气泡特征来实现这种互连结构。

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