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41. 发明授权

US07572354B2 Electrochemical processing of conductive surface 有权
标题翻译：导电表面的电化学处理
公开(公告)号：US07572354B2
公开(公告)日：2009-08-11
申请号：US11445594
申请日：2006-06-01
申请人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol , Douglas W. Young
发明人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol , Douglas W. Young
IPC分类号： C25B9/00 , C25D7/00
CPC分类号： B24B37/20 , B24B37/046 , B24B37/24 , B24B37/26 , C25D5/06 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/2885 , H01L21/76877
摘要： The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece. Upon application of power to the anode plate and the cathode workpiece, the electrolyte solution disposed in the plating apparatus is used to deposit the conductive material on the workpiece surface using cylindrical rollers having the pad or blade type objects.
摘要翻译：本发明涉及通过旋转靠近基板的垫片或刀片型物体来在半导体衬底上镀覆导电材料的方法和装置，从而消除/减少凹陷和空隙。这通过提供安装在圆柱形阳极或辊子上的垫片或刀片型物体，并使用设置在垫片上或穿过垫片上的电解质溶液将导电材料施加到衬底来实现。在本发明的一个实施例中，衬垫或刀片型物体安装在圆柱形阳极上并围绕第一轴线旋转，同时工件可以是静止的或围绕第二轴线旋转，并且来自电解质溶液的金属沉积在工件上，在工件和阳极之间施加电位差。在本发明的另一实施例中，电镀装置包括与阴极工件间隔开的阳极板。在向阳极板和阴极工件施加电力时，使用设置在电镀装置中的电解液将导电材料沉积在工件表面上，使用具有焊盘或刀片型物体的圆柱形辊。

42. 发明申请

US20060042934A1 Method and apparatus for forming an electrical contact with a semiconductor substrate 有权
公开(公告)号：US20060042934A1
公开(公告)日：2006-03-02
申请号：US11259694
申请日：2005-10-25
申请人： Homayoun Talieh , Bulent Basol
发明人： Homayoun Talieh , Bulent Basol
IPC分类号： C25D17/00
CPC分类号： H01L21/6715 , C25D17/001 , H01L21/2885 , H01L21/67075
摘要： The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object. The inflatable tube further provides uniform contact and pressure along the periphery of the workpiece, which may not necessarily be perfectly flat, because the tube can conform according to the shape of the periphery of the workpiece. Further, the present invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.

43. 发明授权

US06905588B2 Packaging deposition methods 失效
标题翻译：包装沉积方法
公开(公告)号：US06905588B2
公开(公告)日：2005-06-14
申请号：US09905335
申请日：2001-07-13
申请人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol
发明人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol
IPC分类号： C25D3/02 , C23C28/00 , C25D5/10 , C25D7/12 , H01L21/288 , H01L21/304 , H01L21/60 , H01L21/768 , C25D5/00 , B23H3/00
CPC分类号： C25D5/00 , C23C18/1608 , C23C18/165 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1848 , C23C18/31 , C25D5/02 , C25D5/10 , C25D5/22 , C25D5/34 , H01L21/2885 , H01L21/7684 , H01L21/76843 , H01L21/76855 , H01L21/76865 , H01L21/76871 , H01L21/76874 , H01L21/76876 , H01L21/76879 , H01L21/76885 , H01L24/11 , H01L2221/1089 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01021 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01057 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/3011
摘要： The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.
摘要翻译：本发明涉及一种制造高性能芯片互连和封装的方法，该方法通过提供以更高效和省时的方式在衬底的空腔中沉积导电材料的方法。这是通过从衬底的顶表面选择性地去除种子层的部分，然后在衬底的空腔中沉积导电材料，其中种子层的部分保留在空腔中。另一种方法包括在衬底的顶表面上形成氧化物层，使得导电材料可以沉积在空腔中，而不会在衬底的顶表面上形成材料。本发明还公开了用于形成多级互连的方法和相应的结构。

44. 发明授权

US06855037B2 Method of sealing wafer backside for full-face electrochemical plating 失效
标题翻译：用于全面电化学电镀的晶片背面密封方法
公开(公告)号：US06855037B2
公开(公告)日：2005-02-15
申请号：US09910686
申请日：2001-07-20
申请人： Jalal Ashjaee , Homayoun Talieh , Bulent Basol , Konstantin Volodarsky
发明人： Jalal Ashjaee , Homayoun Talieh , Bulent Basol , Konstantin Volodarsky
IPC分类号： B24B37/30 , C25D7/12 , C25D17/06 , H01L21/00 , H01L21/683 , B24B1/00
CPC分类号： B24B37/30 , C25D17/001 , C25D17/06 , H01L21/6704 , H01L21/6715 , H01L21/6838
摘要： The present invention provides a wafer carrier that includes an opening, which in one embodiment is a plurality of holes, disposed along the periphery of the wafer carrier. A gas emitted through the holes onto a peripheral back edge of the wafer assists in preventing the processing liquids and contaminants resulting therefrom from reaching the inner region of the base and the backside inner region of the wafer. In another embodiment, a plurality of concentric sealing members are used to prove a better seal, and the outer seal is preferably independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier.
摘要翻译：本发明提供了一种晶片载体，其包括沿着晶片载体的周边设置的开口，其在一个实施例中是多个孔。通过孔发射到晶片的外围后缘上的气体有助于防止由此产生的处理液体和污染物到达晶片的底部和内侧区域的内部区域。在另一个实施例中，使用多个同心密封构件来证明更好的密封，并且外部密封件优选地是独立地可移动的，以允许当晶片仍然附接到晶片载体时清洁晶片的周边背面而发生。

45. 发明授权

US07309407B2 Method and apparatus for forming an electrical contact with a semiconductor substrate 有权
标题翻译：用于形成与半导体衬底的电接触的方法和装置
公开(公告)号：US07309407B2
公开(公告)日：2007-12-18
申请号：US11259694
申请日：2005-10-25
申请人： Homayoun Talieh , Bulent Basol
发明人： Homayoun Talieh , Bulent Basol
IPC分类号： C25D17/06 , C25D7/12 , C25F3/00
CPC分类号： H01L21/6715 , C25D17/001 , H01L21/2885 , H01L21/67075
摘要： The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object. The inflatable tube further provides uniform contact and pressure along the periphery of the workpiece, which may not necessarily be perfectly flat, because the tube can conform according to the shape of the periphery of the workpiece. Further, the present invention can be used to dissolve/etch a metal layer from the periphery of the workpiece.
摘要翻译：本发明涉及一种使用与工件的外表面接触的液体导体对半导体工件的表面（晶片，平板，磁性膜等）进行电镀的方法和装置。液体导体储存在储存器中并通过入口通道泵送到液体室。液体导体被注入到液体室中，使得液体导体与工件的外表面接触。还设有可充气管以防止液体导体到达工件的背面。可以将电镀液施加到工件的前表面，其中保持环/密封件进一步防止电镀溶液和液体导体彼此接触。在替代实施例中，可以使用已经涂覆有导电材料或包含导电物体的可充气管来形成电接触。可膨胀管还可以沿着工件的周边提供均匀的接触和压力，这可能不一定是完全平坦的，因为管可以根据工件的周边的形状来适应。此外，本发明可用于从工件的周边溶解/蚀刻金属层。

46. 发明申请

US20070128851A1 FABRICATION OF SEMICONDUCTOR INTERCONNECT STRUCTURES 审中-公开
标题翻译：半导体互连结构的制造
公开(公告)号：US20070128851A1
公开(公告)日：2007-06-07
申请号：US11672005
申请日：2007-02-06
申请人： Bulent Basol , Homayoun Talieh
发明人： Bulent Basol , Homayoun Talieh
IPC分类号： B24B1/00 , H01L21/4763 , H01L21/461
CPC分类号： C25D5/06 , B24B37/042 , B24B37/046 , B24B49/16 , C25D5/22 , C25D7/123 , C25D17/001 , H01L21/67173 , H01L21/67207 , H01L21/67219 , H01L21/6723 , H01L21/7684
摘要： A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plurality of cavities formed in the surface of the wafer. The electroplating continues until a planar layer of copper with a predetermined thickness is formed on the surface of the wafer. In a following chemical mechanical polishing step the planar layer is removed until the copper remains in the cavities, insulated from one another by exposed regions of the dielectric layer.
摘要翻译：提供了一种在晶片表面形成铜互连结构的系统和方法。该方法包括在电化学机械沉积站中进行平面电镀处理以将铜材料填充到形成在晶片表面中的多个空腔中的步骤。电镀继续进行，直到在晶片的表面上形成具有预定厚度的平坦的铜层。在随后的化学机械抛光步骤中，去除平面层，直到铜保留在空腔中，通过介电层的暴露区域彼此绝缘。

47. 发明授权

US06630059B1 Workpeice proximity plating apparatus 失效
标题翻译：工件接近电镀设备
公开(公告)号：US06630059B1
公开(公告)日：2003-10-07
申请号：US09483095
申请日：2000-01-14
申请人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol , Douglas W. Young
发明人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol , Douglas W. Young
IPC分类号： C25D1700
CPC分类号： B24B37/20 , B24B37/046 , B24B37/24 , B24B37/26 , C25D5/06 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/2885 , H01L21/76877
摘要： The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece. Upon application of power to the anode plate and the cathode workpiece, the electrolyte solution disposed in the plating apparatus is used to deposit the conductive material on the workpiece surface using cylindrical rollers having the pad or blade type objects.
摘要翻译：本发明涉及通过旋转靠近基板的垫片或刀片型物体来在半导体衬底上镀覆导电材料的方法和装置，从而消除/减少凹陷和空隙。这通过提供安装在圆柱形阳极或辊子上的垫片或刀片型物体，并使用设置在垫片上或穿过垫片上的电解质溶液将导电材料施加到衬底来实现。在本发明的一个实施例中，衬垫或刀片型物体安装在圆柱形阳极上并围绕第一轴线旋转，同时工件可以是静止的或围绕第二轴线旋转，并且来自电解质溶液的金属沉积在工件上，在工件和阳极之间施加电位差。在本发明的另一实施例中，电镀装置包括与阴极工件间隔开的阳极板。在向阳极板和阴极工件施加电力时，使用设置在电镀装置中的电解液将导电材料沉积在工件表面上，使用具有焊盘或刀片型物体的圆柱形辊。

48. 发明授权

US06471847B2 Method for forming an electrical contact with a semiconductor substrate 有权
标题翻译：用于与半导体衬底形成电接触的方法
公开(公告)号：US06471847B2
公开(公告)日：2002-10-29
申请号：US09877335
申请日：2001-06-07
申请人： Homayoun Talieh , Bulent Basol
发明人： Homayoun Talieh , Bulent Basol
IPC分类号： C25D500
CPC分类号： H01L21/6715 , C25D17/001 , H01L21/2885 , H01L21/67075
摘要： The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other.
摘要翻译：本发明涉及一种使用与工件的外表面接触的液体导体对半导体工件的表面（晶片，平板，磁性膜等）进行电镀的方法和装置。液体导体储存在储存器中并通过入口通道泵送到液体室。液体导体被注入到液体室中，使得液体导体与工件的外表面接触。还设有可充气管以防止液体导体到达工件的背面。可以将电镀液施加到工件的前表面，其中保持环/密封件进一步防止电镀溶液和液体导体彼此接触。

49. 发明授权

US06355153B1 Chip interconnect and packaging deposition methods and structures 有权
标题翻译：芯片互连和封装沉积方法和结构
公开(公告)号：US06355153B1
公开(公告)日：2002-03-12
申请号：US09398258
申请日：1999-09-17
申请人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol
发明人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol
IPC分类号： C25D500
CPC分类号： C25D5/00 , C23C18/1608 , C23C18/165 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1848 , C23C18/31 , C25D5/02 , C25D5/10 , C25D5/22 , C25D5/34 , H01L21/2885 , H01L21/7684 , H01L21/76843 , H01L21/76855 , H01L21/76865 , H01L21/76871 , H01L21/76874 , H01L21/76876 , H01L21/76879 , H01L21/76885 , H01L24/11 , H01L2221/1089 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01021 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01057 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/3011
摘要： The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.
摘要翻译：本发明涉及一种制造高性能芯片互连和封装的方法，该方法通过提供以更高效和省时的方式在衬底的空腔中沉积导电材料的方法。这是通过从衬底的顶表面选择性地去除种子层的部分，然后在衬底的空腔中沉积导电材料，其中种子层的部分保留在空腔中。另一种方法包括在衬底的顶表面上形成氧化物层，使得导电材料可以沉积在空腔中，而不会在衬底的顶表面上形成材料。本发明还公开了用于形成多级互连的方法和相应的结构。

50. 发明申请

US20080099344A9 Electropolishing system and process 有权
标题翻译：电抛光系统和工艺
公开(公告)号：US20080099344A9
公开(公告)日：2008-05-01
申请号：US10391924
申请日：2003-03-18
申请人： Bulent Basol , Homayoun Talieh
发明人： Bulent Basol , Homayoun Talieh
IPC分类号： B23H3/00
CPC分类号： B24B37/20 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/123 , C25F3/02 , C25F7/00 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/67075 , H01L21/6715
摘要： The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.
摘要翻译：本发明提供一种电抛光半导体晶片的导电表面的方法。在该过程中，接触溶液中的接触电极与接触溶液接触导电层表面上的接触区域。此外，在该过程中，处理溶液中的处理电极与处理溶液接触导电表面上的工艺区域，同时在接触电极和处理电极之间施加电位，以电镀抛光工艺区域的导电层的表面。

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