专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US07839176B2 Methods of making nanotube-based switching elements and logic circuits 有权
标题翻译：制作纳米管开关元件和逻辑电路的方法
公开(公告)号：US07839176B2
公开(公告)日：2010-11-23
申请号：US12476808
申请日：2009-06-02
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/20
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/762 , Y10S977/932 , Y10S977/94 , Y10T29/49002
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
摘要翻译：基于纳米管的开关元件和逻辑电路。在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。通道至少包括所述纳米管通道元件。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。在本发明的另一实施例中，控制电极相对于纳米管通道元件布置，以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。在本发明的另一个实施例中，输出节点包括相对于纳米管通道元件设置的隔离结构，使得通道形成从输出节点的状态基本上是不变的。在本发明的另一个实施例中，隔离结构包括设置在纳米管通道元件的相对侧上的电极，所述电极产生基本上相同的电场。在本发明的另一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

42. 发明授权

US07780918B2 Sensor platform using a horizontally oriented nanotube element 有权
标题翻译：传感器平台采用水平取向的纳米管元件
公开(公告)号：US07780918B2
公开(公告)日：2010-08-24
申请号：US10844913
申请日：2004-05-12
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： G01N27/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes, and, under certain embodiments, it comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing a collection of nanotubes on the structure; defining a pattern within the nanotube collection; removing part of the collection so that a patterned collection remains to form a sensor element; and providing circuitry to electrically sense the sensor's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under certain embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array includes multiple sensors.
摘要翻译：描述了传感器平台及其制造方法，并且包括具有包括纳米管或其他纳米结构（例如纳米线）的水平定向的传感器元件的平台。在某些实施方案中，传感器元件对分析物具有亲和力。在某些实施方案中，这种传感器元件包括一个或多个原始纳米管，并且在某些实施方案中，其包含衍生化或官能化的纳米管。在某些实施例中，通过提供支撑结构来制造传感器; 在结构上提供纳米管的集合; 定义纳米管集合内的图案; 去除部分集合，使得图案化的集合保持形成传感器元件; 以及提供用于电感测传感器电特性的电路。在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。在某些实施方案中，传感器材料在提供在结构上或在图案化之后被衍生化或官能化。在某些实施例中，大规模阵列包括多个传感器。

43. 发明授权

US07583526B2 Random access memory including nanotube switching elements 有权
标题翻译：随机存取存储器包括纳米管开关元件
公开(公告)号：US07583526B2
公开(公告)日：2009-09-01
申请号：US11879352
申请日：2007-07-17
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , B82Y10/00 , G11C13/025 , G11C14/00 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0665 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/936 , Y10S977/938 , Y10S977/943 , Y10T29/49002
摘要： Random access memory including nanotube switching elements. A memory cell includes first and second nanotube switching elements and an electronic memory. Each nanotube switching element includes conductive terminals, a nanotube article and control circuitry capable of controllably form and unform an electrically conductive channel between the conductive terminals. The electronic memory is a volatile storage device capable of storing a logic state in response to electrical stimulus. In certain embodiment the electronic memory has cross-coupled first and second inverters in electrical communication with the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or can operate in a shadow memory or store mode (e.g., when power is interrupted) to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode where the state of the nanotube switching elements may be transferred to the electronic memory.
摘要翻译：随机存取存储器包括纳米管开关元件。存储单元包括第一和第二纳米管切换元件和电子存储器。每个纳米管切换元件包括导电端子，纳米管制品和能够可控地形成和取消导电端子之间的导电通道的控制电路。电子存储器是能够响应于电刺激而存储逻辑状态的易失性存储装置。在某些实施例中，电子存储器具有与第一和第二纳米管切换元件电连通的交叉耦合的第一和第二反相器。电池可以作为普通电子存储器工作，或者可以在阴影存储器或存储模式（例如，当电力中断时）操作以将电子存储器状态传送到纳米管开关元件。该装置可以稍后在调谐模式下操作，其中纳米管切换元件的状态可以被传送到电子存储器。

44. 发明申请

US20090091352A1 NANOTUBE-BASED SWITCHING ELEMENTS WITH MULTIPLE CONTROLS 有权
标题翻译：基于纳米管的开关元件与多个控制
公开(公告)号：US20090091352A1
公开(公告)日：2009-04-09
申请号：US12246009
申请日：2008-10-06
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/20 , G11C11/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior.
摘要翻译：基于纳米管的开关元件具有由此制成的多个控制和电路。开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。

45. 发明授权

US07416993B2 Patterned nanowire articles on a substrate and methods of making the same 有权
标题翻译：在衬底上形成图案的纳米线制品及其制造方法
公开(公告)号：US07416993B2
公开(公告)日：2008-08-26
申请号：US10936119
申请日：2004-09-08
申请人： Brent M. Segal , Thomas Rueckes , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Claude L. Bertin
IPC分类号： H01L21/302
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0023 , H01L2924/0002 , Y10S977/724 , Y10S977/762 , Y10S977/767 , Y10S977/856 , H01L2924/00
摘要： Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, metallic nanowires, nanotubes, single walled carbon nanotubes, multi-walled carbon nanotubes, or nanowires entangled with nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. A strapping material may be positioned to contact a portion of the plurality of nanowire segments. The strapping material may be patterned to create the shape of a frame with an opening that exposes an area of the nanowire fabric. Such a strapping layer may also be used for making electrical contact to the nanowire fabric especially for electrical stitching to lower the overall resistance of the fabric.
摘要翻译：公开了纳米线制品及其制造方法。导电制品包括沿着制品限定多个导电通路的多个接触接触的纳米线段。纳米线段可以是半导体纳米线，金属纳米线，纳米管，单壁碳纳米管，多壁碳纳米管或与纳米管缠结的纳米线。各个片段可以具有不同的长度，并且可以包括长度短于制品的长度的片段。捆扎材料可以被定位成接触多个纳米线段的一部分。捆扎材料可以被图案化以产生具有暴露纳米线织物的区域的开口的框架的形状。这种捆扎层也可以用于与纳米线织物的电接触，特别是用于电缝合以降低织物的整体阻力。

46. 发明申请

US20080164541A1 Sensor platform using a non-horizontally oriented nanotube element 有权
公开(公告)号：US20080164541A1
公开(公告)日：2008-07-10
申请号：US11827393
申请日：2007-07-11
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L29/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.

47. 发明授权

US07294877B2 Nanotube-on-gate FET structures and applications 有权
标题翻译：纳米管栅极FET结构和应用
公开(公告)号：US07294877B2
公开(公告)日：2007-11-13
申请号：US10811373
申请日：2004-03-26
申请人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L51/30
CPC分类号： H01L51/055 , B82Y10/00 , G11C13/025 , G11C16/0416 , G11C23/00 , G11C2213/17 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052
摘要： Nanotube on gate FET structures and applications of such, including n2 crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. Certain embodiments of the device have an area of about 4 F2. Other embodiments include a release line is positioned in spaced relation to the nanotube switching element, and having a horizontal orientation that is parallel to the orientation of the source and drain diffusions. Other embodiments provide an n2 crossbar array having n2 non-volatile transistor devices, but require only 2n control lines.
摘要翻译：纳米管栅极FET结构及其应用，包括只需要2n条控制线的n 2条交叉。非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域以及设置在源极和漏极区域之间的第二半导体类型的材料的沟道区域。栅极结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上方的绝缘体上。控制门由半导体或导电材料中的至少一种制成。机电偏转型纳米管开关元件与栅极结构和控制栅极结构中的一个固定接触，并且不与栅极结构和控制栅极结构中的另一个固定接触。该器件具有固有电容的网络，包括相对于栅极结构的未折射的纳米管开关元件的固有电容。网络使得纳米管开关元件响应于施加到控制栅极和源极区域和漏极区域之一的信号而偏转成与栅极结构和控制栅极结构中的另一个接触。该装置的某些实施例具有约4F 2的面积。其他实施例包括释放线与纳米管开关元件间隔开定位，并且具有平行于源极和漏极扩散的取向的水平取向。其他实施例提供了具有n 2个非易失性晶体管器件的n≥2的交叉开关阵列，但是仅需要2n个控制线。

48. 发明授权

US07138832B2 Nanotube-based switching elements and logic circuits 有权
公开(公告)号：US07138832B2
公开(公告)日：2006-11-21
申请号：US10917893
申请日：2004-08-13
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H03K19/20
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/762 , Y10S977/932 , Y10S977/94 , Y10T29/49002
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.

49. 发明授权

US07115960B2 Nanotube-based switching elements 有权
标题翻译：基于纳米管的开关元件
公开(公告)号：US07115960B2
公开(公告)日：2006-10-03
申请号：US10917794
申请日：2004-08-13
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/84
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/762
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
摘要翻译：基于纳米管的开关元件和逻辑电路。在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。通道至少包括所述纳米管通道元件。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。在本发明的另一实施例中，控制电极相对于纳米管通道元件布置，以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。在本发明的另一个实施例中，输出节点包括相对于纳米管通道元件设置的隔离结构，使得通道形成从输出节点的状态基本上是不变的。在本发明的另一个实施例中，隔离结构包括设置在纳米管通道元件的相对侧上的电极，所述电极产生基本上相同的电场。在本发明的另一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

50. 发明授权

US07113426B2 Non-volatile RAM cell and array using nanotube switch position for information state 有权
标题翻译：非易失性RAM单元和阵列使用纳米管开关位置进行信息状态
公开(公告)号：US07113426B2
公开(公告)日：2006-09-26
申请号：US10810963
申请日：2004-03-26
申请人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： G11C11/34 , G11C11/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025
摘要： Non-Volatile RAM Cell and Array using Nanotube Switch Position for Information State. A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor with first, second and third nodes. The first and second nodes are in respective electrical communication with the bit line and the word line. Each cell further includes an electromechanically deflectable switch, having a first, second and third node. The first node is in electrical communication with the release line, and a third node is in electrical communication with the third node of the cell selection transistor. The electromechanically deflectable switch includes a nanotube switching element physically positioned between the first and third nodes of the switch and in electrical communication with the second node of the switch. The second node of the switch is in communication with a reference signal. Each nanotube switching element is deflectable into contact with the third node of the switch in response to signals at the first and second node of the cell selection transistor and is releasable from such contact in response to a signal at the release line. In preferred embodiments, the cell selection transistor is a FET and the second node of the transistor is a gate of the FET.
摘要翻译：非易失性RAM单元和阵列使用纳米管切换位置信息状态。非易失性存储器阵列包括多个存储器单元，每个单元接收位线，字线和释放线。每个存储单元包括具有第一，第二和第三节点的单元选择晶体管。第一和第二节点与位线和字线分别电气通信。每个单元还包括具有第一，第二和第三节点的机电偏转开关。第一节点与释放线电连通，第三节点与小区选择晶体管的第三节点电通信。机电可偏转开关包括物理地位于开关的第一和第三节点之间并与开关的第二节点电通信的纳米管开关元件。交换机的第二个节点与参考信号通信。每个纳米管开关元件响应于电池选择晶体管的第一和第二节点处的信号而偏转成与开关的第三节点接触，并且响应于释放线处的信号而可从该接触件释放。在优选实施例中，电池选择晶体管是FET，晶体管的第二节点是FET的栅极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式