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41. 发明授权

US07786485B2 Thin-film transistor and display device 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US07786485B2
公开(公告)日：2010-08-31
申请号：US12390144
申请日：2009-02-20
申请人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
发明人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/66765
摘要： A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers.
摘要翻译：薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极区和漏极区，以至少部分地与栅电极重叠，栅极绝缘层介于栅电极和杂质半导体层; 一对导电层，其至少部分地与所述栅电极和所述杂质半导体层重叠在所述栅极绝缘层上方，并且在沟道长度方向上设置有间隔; 以及与所述栅极绝缘层和所述一对导电层接触并在所述一对导电层之间延伸的非晶半导体层。

42. 发明授权

US08637866B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08637866B2
公开(公告)日：2014-01-28
申请号：US12490447
申请日：2009-06-24
申请人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
发明人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
IPC分类号： H01L29/72
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.
摘要翻译：至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

43. 发明授权

US08124972B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08124972B2
公开(公告)日：2012-02-28
申请号：US12429486
申请日：2009-04-24
申请人： Koji Dairiki , Hidekazu Miyairi , Toshiyuki Isa , Akiharu Miyanaga , Takuya Hirohashi , Shunpei Yamazaki , Takeyoshi Watabe
发明人： Koji Dairiki , Hidekazu Miyairi , Toshiyuki Isa , Akiharu Miyanaga , Takuya Hirohashi , Shunpei Yamazaki , Takeyoshi Watabe
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01J37/32091 , H01L27/1214 , H01L27/1218 , H01L27/1288 , H01L29/04 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semiconductor layer imparting one conductivity type which forms a source region and a drain region; and a buffer layer formed from an amorphous semiconductor, which is located between the semiconductor layer and the impurity semiconductor layer. The thin film transistor includes the crystal region which includes minute crystal grains and inverted conical or inverted pyramidal grain each of which grows approximately radially from a position away from an interface between the gate insulating layer and the semiconductor layer toward a direction in which the semiconductor layer is deposited in a region which does not reach the impurity semiconductor layer.
摘要翻译：薄膜晶体管包括覆盖栅电极的栅极绝缘层，在具有绝缘表面的基板上; 形成在非晶结构中包含多个晶体区域的沟道形成区域的半导体层; 赋予形成源极区域和漏极区域的一种导电型的杂质半导体层; 以及由位于半导体层和杂质半导体层之间的非晶半导体形成的缓冲层。薄膜晶体管包括晶体区域，其包括微小晶粒和倒锥形或倒棱锥晶粒，其每一个从远离栅极绝缘层和半导体层之间的界面的位置朝向半导体层的方向大致径向地生长沉积在不到达杂质半导体层的区域中。

44. 发明授权

US07812348B2 Thin-film transistor and display device 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US07812348B2
公开(公告)日：2010-10-12
申请号：US12390954
申请日：2009-02-23
申请人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
发明人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
IPC分类号： H01L27/14
CPC分类号： H01L29/78609 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78618 , H01L29/78669
摘要： A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers.
摘要翻译：解决了导通状态电流和截止电流的问题的薄膜晶体管，以及能够进行高速运转的薄膜晶体管。薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极和漏极区域，其间具有间隔，以便与具有栅极绝缘层的栅电极重叠插入在栅电极和杂质半导体层之间; 添加作为受体的杂质元素的一对半导体层，与栅极电极和杂质半导体层重叠在栅极绝缘层上，并且在沟道长度方向上间隔设置; 以及与所述栅绝缘层和所述一对半导体层接触并在所述一对半导体层之间延伸的非晶半导体层。

45. 发明授权

US08513664B2 Thin film transistor, semiconductor device and electronic device 有权
标题翻译：薄膜晶体管，半导体器件和电子器件
公开(公告)号：US08513664B2
公开(公告)日：2013-08-20
申请号：US12490458
申请日：2009-06-24
申请人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki
发明人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor includes, as a buffer layer, an amorphous semiconductor layer having nitrogen or an NH group between a gate insulating layer and source and drain regions and at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.
摘要翻译：薄膜晶体管包括作为缓冲层的至少在源极和漏极区域上具有氮或NH基的非晶半导体层，栅极绝缘层与源极和漏极区之间。与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

46. 发明授权

US08168973B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08168973B2
公开(公告)日：2012-05-01
申请号：US12467005
申请日：2009-05-15
申请人： Shunpei Yamazaki , Koji Dairiki , Hidekazu Miyairi , Akiharu Miyanaga , Takuya Hirohashi
发明人： Shunpei Yamazaki , Koji Dairiki , Hidekazu Miyairi , Akiharu Miyanaga , Takuya Hirohashi
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L27/1288 , H01L29/66765 , H01L29/78669
摘要： The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer, a semiconductor layer including an impurity element imparting one conductivity type over the amorphous semiconductor layer. The amorphous semiconductor layer comprises an NH radical. Defects of the amorphous semiconductor layer are reduced by cross-linking dangling bonds with the NH radical in the amorphous semiconductor layer.
摘要翻译：薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅极绝缘层，栅极绝缘层上的非晶半导体层，包括在非晶半导体层上赋予一种导电类型的杂质元素的半导体层。非晶半导体层包含NH自由基。通过与非晶半导体层中的NH自由基交联悬挂键来减少非晶半导体层的缺陷。

47. 发明授权

US09178071B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09178071B2
公开(公告)日：2015-11-03
申请号：US13225703
申请日：2011-09-06
申请人： Hidekazu Miyairi , Koji Dairiki , Shunpei Yamazaki , Ryo Arasawa
发明人： Hidekazu Miyairi , Koji Dairiki , Shunpei Yamazaki , Ryo Arasawa
IPC分类号： H01L21/336 , H01L29/786 , H01L29/66
CPC分类号： H01L29/78678 , H01L29/66765 , H01L29/78606 , H01L29/78648 , H01L29/78669 , H01L29/78696
摘要： Provided is a method for manufacturing a semiconductor device with fewer masks and in a simple process. A gate electrode is formed. A gate insulating film, a semiconductor film, an impurity semiconductor film, and a conductive film are stacked in this order, covering the gate electrode. A source electrode and a drain electrode are formed by processing the conductive film. A source region, a drain region, and a semiconductor layer, an upper part of a portion of which does not overlap with the source region and the drain region is removed, are formed by processing the upper part of the semiconductor film, while the impurity semiconductor film is divided. A passivation film over the gate insulating film, the semiconductor layer, the source region, the drain region, the source electrode, and the drain electrode are formed. An etching mask is formed over the passivation film. At least the passivation film and the semiconductor layer are processed to have an island shape while an opening reaching the source electrode or the drain electrode is formed, with the use of the etching mask. The etching mask is removed. A pixel electrode is formed over the gate insulating film and the passivation film.
摘要翻译：提供一种用于制造具有较少掩模的半导体器件的方法，并且在简单的过程中。形成栅电极。依次层叠栅绝缘膜，半导体膜，杂质半导体膜和导电膜，覆盖栅电极。通过处理导电膜形成源电极和漏电极。通过处理半导体膜的上部，形成源区域，漏极区域和半导体层，其部分的上部不与源极区域和漏极区域重叠，而杂质半导体薄膜被划分。形成栅极绝缘膜，半导体层，源极区域，漏极区域，源极电极和漏极电极之后的钝化膜。在钝化膜上形成蚀刻掩模。通过使用蚀刻掩模，至少钝化膜和半导体层被加工成具有岛状，同时形成到达源电极或漏电极的开口。去除蚀刻掩模。在栅极绝缘膜和钝化膜上形成像素电极。

48. 发明申请

US20070000428A1 Laser irradiation apparatus 有权
标题翻译：激光照射装置
公开(公告)号：US20070000428A1
公开(公告)日：2007-01-04
申请号：US11514969
申请日：2006-09-05
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Satoshi Murakami , Mai Akiba
IPC分类号： C30B15/14
CPC分类号： H01L27/1285 , B23K26/0604 , B23K26/0608 , B23K26/066 , B23K26/0738 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/76894 , H01L27/1296 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L51/5284 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：根据掩模掌握半导体膜上的应该留在基板上的每个区域。然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。光束点的低输出能量的每个部分被狭缝屏蔽。在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

49. 发明授权

US07050878B2 Semiconductror fabricating apparatus 有权
标题翻译：半导体制造装置
公开(公告)号：US07050878B2
公开(公告)日：2006-05-23
申请号：US10300927
申请日：2002-11-21
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
IPC分类号： G06F19/00
CPC分类号： H01L21/02678 , B23K26/04 , B23K26/0604 , B23K26/064 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/1224 , B23K26/123 , B23K26/127 , H01L21/02683 , H01L21/2026
摘要： Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).
摘要翻译：提供一种使用激光结晶技术的半导体制造装置，用于提高衬底的处理效率和增加半导体膜的迁移率。多室系统的半导体制造装置包括用于形成半导体膜的成膜设备和激光照射设备。激光照射设备包括用于控制相对于照射物体的激光照射位置的第一装置，用于发射激光的第二装置（激光振荡器），用于处理或会聚激光的第三装置（光学系统），以及用于控制第二装置的振荡和第一装置的控制，使得由第三装置处理的激光束的光斑可以覆盖基于掩模配置（图案信息）上的数据确定的位置。

50. 发明申请

US20050277028A1 Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment 有权
标题翻译：激光装置，激光照射方法，半导体装置的制造方法，半导体装置，使用该激光装置的半导体装置的制造系统以及电子设备
公开(公告)号：US20050277028A1
公开(公告)日：2005-12-15
申请号：US11185737
申请日：2005-07-21
申请人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
发明人： Shunpei Yamazaki , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba
IPC分类号： H01L21/20 , B23K26/06 , B23K26/08 , G02F1/1368 , G03F1/00 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01S3/00 , H01S5/06
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/082 , B23K2101/007 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.
摘要翻译：提供能够提高基板处理效率的连续振荡的激光装置，激光照射方法以及使用该激光装置的半导体装置的制造方法。根据掩模掌握在图案化之后留在基板上的半导体膜的一部分。然后，确定要用激光扫描的部分，使得可以通过图案化至少使待获得的部分结晶。此外，使光束点撞击要扫描的部分。结果，半导体膜部分结晶。也就是说，利用本发明，激光不被扫描并照射到半导体膜的整个表面上，而是被扫描，使得至少不可缺少的部分被结晶。利用上述结构，可以将半导体膜结晶后的激光照射到通过图案化去除的部分上所花费的时间。

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