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    • 41. 发明专利
    • ALIGNER
    • JPH03185809A
    • 1991-08-13
    • JP32396789
    • 1989-12-15
    • CANON KK
    • OTA HIROHISAOZAWA KUNITAKAMORI MAKIKOUZAWA SHUNICHINOSE TETSUSHI
    • G03F9/00H01L21/027H01L21/30
    • PURPOSE:To enable optimum exposure and improve exposure precision, by calculating the surface shape of the whole surface of a substrate to be exposed before exposure, performing AF detection for each shot at the time of step-and- repeat exposure, determining the optimum exposure plane on the basis of the Af detection and the surface shape, and performing exposure by making the optimum exposure plane coincide with in ideal exposure plane. CONSTITUTION:By moving a wafer stage 24, a global AF measuring shot on a wafer 1 is moved to an AF measuring position, and the position, in the direction of an optical axis, of the surface of a substrate 1 to be exposed in a plurality of shots is detected before exposure. On the basis of all stored AF measurement data, the surface shape of the whole surface of the wafer 1 is calculated and grasped. For each shot the AF measurement similar to the one performed about one of the above-mentioned AF measuring shots is performed. The optimum exposure plane of each shot is determined by the AF measurement values and the above grasped surface shape. By performing correction driving of X, Y, and theta for making the optimum exposure plane coincide with an ideal exposure plane, the alignment of a mask 8 and the wafer 1 in the plane direction is performed, and the exposure of present shot is performed.
    • 42. 发明专利
    • EXPOSURE DEVICE
    • JPH03167818A
    • 1991-07-19
    • JP30653989
    • 1989-11-28
    • CANON KK
    • OZAWA KUNITAKAOTA HIROHISAMORI MAKIKOUZAWA SHUNICHINOSE TETSUSHI
    • H01L21/30G03F9/00H01L21/027
    • PURPOSE:To facilitate the provision of measuring marks on an x-y stage by arranging measuring marks in line along the measurement direction on the x-y stage on the substrate side. CONSTITUTION:Reference marks 14 for mask alignment is provided on a wafer stage 24. The reference marks include measuring marks 255 to 258 that are paired with mask alignment marks 251 to 254 on a mask 2. The marks 255 and 256 are on the x-axis, while the marks 257 and 258 are on the y-axis. In this manner, it is possible to minimize the deviation of the measuring marks 255 to 258 toward the measuring direction if they are put with a minute angular deviation. The distances between marks 255 and 256 and between marks 257 and 258 may be made equal to the distances between marks 251 and 252 and between 253 and 254, respectively. In this case, after the deviation of one measuring marks is measured for mask alignment, the x-y stage on the substrate side does not have to be driven in both direction to measure the deviation of the other measuring mark.
    • 43. 发明专利
    • ALIGNMENT EQUIPMENT
    • JPH03151624A
    • 1991-06-27
    • JP29002089
    • 1989-11-09
    • CANON KK
    • MORI MAKIKOOZAWA KUNITAKAOTA HIROHISAUZAWA SHUNICHINOSE TETSUSHI
    • H01L21/30H01L21/027
    • PURPOSE:To realize alignment of high precision by detecting strain of each shot, and correcting the relative position deviation measured value for alignment on the basis of the detected strain data. CONSTITUTION:For each exposure position (shot) on a wafer 3, an exposed pattern on the wafer 3 and a transferring pattern of a mask 2 are aligned, and exposed to light. The strain of each shot in die-by-die alignment is detected, and the position deviation measured value by an alignment mark is corrected on the basis of the detected strain data. Thereby the expansion and contraction or the strain of a substrate 3 to be exposed and the rotation (rotary deviation) between the substrate 3 and an original sheet 2 can be discriminated, so that, even when the expansion and contraction or the strain are present in the substrate 3 to be exposed, the exposed pattern on the substrate 3 and the transferring pattern of the original sheet 2 can be superposed in the minimum deviation state. Thereby alignment precision in the meaning of chip conformation can be improved.
    • 44. 发明专利
    • ALIGNMENT DEVICE
    • JPH03110819A
    • 1991-05-10
    • JP24814089
    • 1989-09-26
    • CANON KK
    • MORI MAKIKOUZAWA SHUNICHIOZAWA KUNITAKAOTA HIROHISANOSE TETSUSHI
    • G01B11/26H01L21/027H01L21/30H01L21/66
    • PURPOSE:To improve throughput capacity by calculating a plurality of rotation slippage values and performing a weighed operation of the above rotation slippage values when the amount of rotation slippage between a mask and a wafer is calculated. CONSTITUTION:A plurality of rotation slippage values are calculated on the basis of a plurality of combination kinds of measurement information which are obtained by a mark measuring means for relative amount of slippage between a mask and a wafer. The amount of corrective driving so as to put a substrate on top of an original plate can be obtained further with high accuracy by performing a weighted operation or by selecting the rotation slippage values according to the accuracy of the measurement information. Since rotation slippage is selected according to the accuracy of measurement information, sufficiently, highly accurate rotation slippage values that are calculated on the basis of measurement information in a linear region are obtained, even though either of marks enters in a nonlinear region. In this way, the number of steps is reduced without making each measurement region narrow and throughput capacity is increased.
    • 45. 发明专利
    • ALIGNER
    • JPH03108310A
    • 1991-05-08
    • JP24329089
    • 1989-09-21
    • CANON KK
    • EBINUMA RYUICHIOZAWA KUNITAKAKARIYA TAKUOUZAWA SHUNICHINOSE TETSUSHI
    • G03F9/00G03F7/20H01L21/027H01L21/30
    • PURPOSE:To improve the exposing area setting accuracy of an exposing device by detecting the positional relation between light shielding means which limit the exposing area and the circuit pattern section of a mask. CONSTITUTION:A total of four positional deviation detecting means 6 are provided for detecting positional deviations between alignment marks 101 on a mask 1 on the periphery of a circuit pattern 102 on the mask 1 and alignment marks on a water 2. Aperture blades 4 are sufficiently retreated from the marks 101 so that they cannot intercept the laser beams 601 of the means 6 reaching the marks 101. When the blades 4 comes to positions where they cover the marks 101 against the beams 601, drive controlling sections of aperture stages 401 receive signals from signal processing sections of the means 6 and obtain the positional information of the marks 101 of the blades 4. When the marks 101 are not exposed against the laser beams 601, the blades 4 are retreated by prescribed amounts upon detecting the positional deviation between the wafer 2 and mask 1 and, when the marks 101 are exposed, the blades 4 are advanced. When the blades 4 are repeatedly retreated and advanced in such way, the exposing area setting accuracy can be improved.
    • 46. 发明专利
    • POSITION DETECTOR
    • JPH0348704A
    • 1991-03-01
    • JP18511989
    • 1989-07-17
    • CANON KK
    • ABE NAOTOMIZUSAWA NOBUTOSHIOZAWA KUNITAKANOSE TETSUSHI
    • G01B11/00H01L21/027H01L21/30
    • PURPOSE:To attain high-accuracy position detection by controlling the position and attitude of pickups so that the pickups are not positioned mutually in the regular reflection directions of body irradiation luminous flux when a line sensor detects the position of a body. CONSTITUTION:Luminous flux 107 has alignment information which is diffracted by a mask alignment mark 105a formed on a mark 105 and a wafer alignment mark 106a formed on a wafer 106. A line sensor 108 photodetects the luminous flux 107 having the alignment information. The regular reflected light, large- intensity unnecessary diffracted light, and large-intensity scattered light on the mask and wafer are included in the regular reflection direction in a plane containing the normal of the mask 105 or wafer 106 and the optical path of the regular reflected light on the mask 105 or wafer 106. Here, a pickup position control means adjusts the positions or attitudes of the respective pickups 1 so that the pickups are not positioned mutually in the regular reflection direction of luminous flux from the pickups 1 at the time of position detection.
    • 47. 发明专利
    • POSITION DETECTOR
    • JPH02231505A
    • 1990-09-13
    • JP20992389
    • 1989-08-14
    • CANON KK
    • MATSUGI MASAKAZUSAITO KENJISUDA SHIGEYUKIKURODA AKIRANIWA YUKICHINOSE TETSUSHI
    • G01B11/00H01L21/027
    • PURPOSE:To eliminate the movement of an alignment head before and after exposure and to obtain high accuracy by forming physical optical elements of zone plates which perform lens operation or grating lens elements on the respective surfaces of a mask and a wafer and position the elements. CONSTITUTION:The mask 1 and the wafer 2 on an XY stage 100 are held having a gap value in a specific range, a 1st physical optical element 3a composed of a grating lens, etc., which is a sort of Fresnel zone plate is formed on the surface of the mask 1, and a 2nd physical optical element 4a consisting of a grating lens is formed on the surface of the wafer 2. The physical optical element 3a on the surface of the mask 1 is irradiated slantingly with the luminous flux emitted by a light source 10 through a half-mirror 12 and the light is passed between the mask 1 and wafer 2 at right angles to the surface of one of them and then made incident on the 2nd physical optical element 4a. Then the reflected light from the 2nd physical optical element 4a is guided to a detector 8 through the 1st physical optical element 3a and half-mirror 12.
    • 49. 发明专利
    • POSITIONING APPARATUS
    • JPH0293305A
    • 1990-04-04
    • JP24664888
    • 1988-09-30
    • CANON KK
    • ABE NAOTOSUDA SHIGEYUKIUDA KOJIOTA HIROHISANOSE TETSUSHI
    • G01B11/00G03F9/00H01L21/027H01L21/30
    • PURPOSE:To position a mask and a wafer with high accuracy by setting the accumulation time of a photoelectric transducer of accumulation type as a photoreceptor properly in consideration of a cycle of natural oscillation frequency of the relative oscillation of said mask and wafer. CONSTITUTION:A light flux from a semiconductor laser 101 as an illuminant is guided through alignment marks 104a, 105a respectively marked on a mask 104 and a wafer 105 confronting each other to a photoelectric transducer 106 of accumulation type composed of a CCD or the like. The mask 104 and wafer 105 are positioned by utilizing an output signal of the photoelectric transducer 106. If the accumulation time of the device 106 is selected to be sufficiently longer than the cycle of a natural oscillation frequency of the relative oscillation of the mask 104 and wafer 105, or several times of integer, the position of the wafer 105 and mask 104 obtained by a signal processor unit 109 is hardly influenced by the deviation resulting from the relative oscillation therebetween, thus realizing highly accurate positioning.
    • 50. 发明专利
    • ALIGNMENT APPARATUS
    • JPH0274803A
    • 1990-03-14
    • JP22580488
    • 1988-09-09
    • CANON KK
    • HORYU SAKAESUDA SHIGEYUKINOSE TETSUSHI
    • G01B11/00G01B11/14G03F9/00H01L21/027H01L21/30
    • PURPOSE:To prevent the erroneous recognition of the state of agreement and to make it possible to correct the amount of deviation based on the value of an interval by obtaining the amount of the position deviation between a first body and a second body and the interval between the first body and the second body. CONSTITUTION:Amount DELTA of the deviation between the position of a first body 1 and the position of a second body 2 is obtained. At the same time, an interval (g) is obtained. Namely the deviating amount DELTA and the interval (g) are obtained based on the following combinations: the combination of two amounts depending on the relative deviating amount DELTA between the first body and the second body and the interval (g) between the first body 1 and the second body 2and the amount which does not depend on both the deviating amount DELTA and the interval (g); and the combination of an amount depending on the deviating amount DELTA and the interval (g), an amount depending on only the interval (g) and an amount which does not depend on both the deviating amount DELTA and the interval (g). The positions of the first body 1 and the second body 2 are aligned by utilizing the deviating amount DELTA and the interval (g) at this time. In this way, the causes of errors which are generated in positioning are solved, and the highly accurate alignment can be performed.