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    • 44. 发明授权
    • Mask ROM cell and method of fabricating the same
    • 掩模ROM单元及其制造方法
    • US06555881B2
    • 2003-04-29
    • US09150024
    • 1998-09-09
    • Jin Soo Kim
    • Jin Soo Kim
    • H01L2976
    • H01L27/1126H01L27/112
    • Mask ROM cell and method of fabricating the same, is disclosed, including a semiconductor substrate of a first conductivity type, a plurality of impurity diffusion regions of a second conductivity type, formed in the semiconductor substrate in one direction, having a predetermined distance therebetween, an insulating layer formed on a portion of the semiconductor substrate, corresponding to each impurity diffusion region, a gate insulating layer formed on only a portion of the semiconductor substrate, between the impurity diffusion regions and a plurality of conductive lines formed on the gate insulating layer and insulating layer in a predetermined interval, being perpendicular to the impurity diffusion regions.
    • 掩模ROM单元及其制造方法公开在半导体基板中,在一个方向上形成有第一导电类型的半导体基板和第二导电类型的多个杂质扩散区域,其间具有预定距离, 对应于每个杂质扩散区域的半导体衬底的一部分上形成的绝缘层,仅形成在半导体衬底的一部分上的栅极绝缘层,位于杂质扩散区域和形成在栅极绝缘层上的多个导电线之间 和绝缘层,其以预定间隔垂直于杂质扩散区。