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41. 发明授权

US08659107B2 Radiation receiver and method of producing a radiation receiver 失效
标题翻译：辐射接收机和辐射接收机的制造方法
公开(公告)号：US08659107B2
公开(公告)日：2014-02-25
申请号：US12746121
申请日：2008-12-17
申请人： Rainer Butendeich , Reiner Windisch
发明人： Rainer Butendeich , Reiner Windisch
IPC分类号： H01L27/148
CPC分类号： H01L31/03529 , H01L31/02162 , H01L31/105 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.
摘要翻译：辐射接收器具有包括第一有源区和第二有源区的半导体本体，每个半导体本体设置用于检测辐射。第一有源区和第二有源区彼此垂直地间隔开。隧道区域布置在第一有源区域和第二有源区域之间。隧道区域与设置在第一有源区域和第二有源区域之间的焊盘电连接，用于半导体本体的外部电接触。附加地示出了产生辐射接收器的方法。

42. 发明授权

US07932526B2 LED semiconductor body and use of an LED semiconductor body 有权
标题翻译： LED半导体体和使用LED半导体体
公开(公告)号：US07932526B2
公开(公告)日：2011-04-26
申请号：US12087293
申请日：2006-12-13
申请人： Reiner Windisch , Günther Grönninger , Peter Heidborn , Christian Jung , Walter Wegleiter
发明人： Reiner Windisch , Günther Grönninger , Peter Heidborn , Christian Jung , Walter Wegleiter
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L33/0016 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.
摘要翻译：一种LED半导体本体，包括第一辐射生成有源层和第二辐射生成有源层，所述第一有源层和所述第二有源层在垂直方向上彼此上下布置。

43. 发明申请

US20100038667A1 Optoelectronic Semiconductor Chip and Method for Manufacturing a Contact Structure for Such a Chip 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US20100038667A1
公开(公告)日：2010-02-18
申请号：US12523501
申请日：2008-01-11
申请人： Reiner Windisch
发明人： Reiner Windisch
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/02 , H01L33/10 , H01L33/145 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： An optoelectronic semiconductor chip with a semiconductor body having a semiconductor layer sequence with an active region suitable for generating radiation is specified, wherein the semiconductor chip comprises a radiation-transmissive and electrically conductive contact layer arranged on a semiconductor body and electrically connected to an active region. The contact layer adjoins a barrier layer of the semiconductor layer sequence and a contact layer is applied to the semiconductor body having a structure. An electrode is arranged on the semiconductor body on a side of the active region facing away from the barrier layer and having a contact area, wherein the contact layer adjoins the barrier layer with its entire surface in a region of the barrier layer that is covered by the contact area of the electrode.
摘要翻译：具有半导体本体的光电子半导体芯片具有具有适于产生辐射的有源区的半导体层序列，其中半导体芯片包括布置在半导体本体上并电连接到有源区的辐射透射和导电接触层。接触层邻接半导体层序列的阻挡层，并且将接触层施加到具有结构的半导体本体。电极被布置在半导体本体上的有源区域背离屏障层的一侧并且具有接触区域，其中接触层与屏障层相邻，其整个表面在阻挡层的被覆盖的区域中电极的接触面积。

44. 发明申请

US20100019259A1 LED Semiconductor Body and Use of an LED Semiconductor Body 有权
标题翻译： LED半导体器件和LED半导体器件的使用
公开(公告)号：US20100019259A1
公开(公告)日：2010-01-28
申请号：US12443338
申请日：2007-08-28
申请人： Reiner Windisch , Ralph Wirth
发明人： Reiner Windisch , Ralph Wirth
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/08 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： An LED semiconductor body includes at least one first radiation-generating active layer and at least one second radiation-generating active layer, wherein the LED semiconductor body has a photonic crystal.
摘要翻译： LED半导体本体包括至少一个第一辐射发生有源层和至少一个第二辐射产生有源层，其中该LED半导体本体具有一个光子晶体。

45. 发明授权

US07435999B2 Semiconductor chip for optoelectronics and method for the production thereof 有权
标题翻译：光电半导体芯片及其生产方法
公开(公告)号：US07435999B2
公开(公告)日：2008-10-14
申请号：US11120774
申请日：2005-05-02
申请人： Reiner Windisch , Ralph Wirth , Walter Wegleiter
发明人： Reiner Windisch , Ralph Wirth , Walter Wegleiter
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/387
摘要： A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.
摘要翻译：一种具有薄膜层的光电子半导体芯片，其中形成发射电磁辐射的区域，并且具有将后侧与发射侧连接的发射侧，后侧和侧面。用于薄膜层的载体被布置在其后侧并与其连接。在发射侧形成至少一个电前侧接触结构，并且在后侧形成至少一个沟槽。沟槽限定至少一个基本上不与前侧接触结构重叠的部分区域。

46. 发明申请

US20080237633A1 Radiation Detector 有权
标题翻译：辐射检测器
公开(公告)号：US20080237633A1
公开(公告)日：2008-10-02
申请号：US10593792
申请日：2005-03-10
申请人： Arndt Jaeger , Peter Staus , Reiner Windisch
发明人： Arndt Jaeger , Peter Staus , Reiner Windisch
IPC分类号： H01L31/0352
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/02162 , H01L31/0296 , H01L31/03046 , H01L31/1035 , Y02E10/544
摘要： The invention specifies a radiation detector for detecting radiation (8) according to a predefined spectral sensitivity distribution (9) that exhibits a maximum at a predefined wavelength λ0, comprising a semiconductor body (1) with an active region (5) serving to generate a detector signal and intended to receive radiation, in which according to one embodiment the active region (5) includes a plurality of functional layers (4a, 4b, 4c, 4d) that have different band gaps and/or thicknesses and are implemented such that they (4a, 4b, 4c, 4d) at least partially absorb radiation in a range of wavelengths greater than λ0. According to a further embodiment, disposed after the active region is a filter layer structure (70) comprising at least one filter layer (7, 7a, 7b, 7c), said filter layer structure determining the short-wave side (101) of the detector sensitivity (10) according to the predefined spectral sensitivity distribution (9) by absorbing wavelengths smaller than λ0. A radiation detector for detecting radiation (8) according to the spectral sensitivity distribution (9) of the human eye is also specified. The semiconductor body can be monolithically integrated.
摘要翻译：本发明规定了一种用于根据在预定波长λ0表示最大值的预定光谱灵敏度分布（9）来检测辐射（8）的辐射检测器，其包括具有活性的半导体本体（1）用于产生检测器信号并用于接收辐射的区域（5），其中根据一个实施例，有源区域（5）包括具有不同的功能层（4,4a，4b，4c，4d）的多个功能层带隙和/或厚度，并且被实现为使得它们（4a，4b，4c，4d）至少部分吸收在大于λ0的波长范围内的辐射。根据另一实施例，在有源区域之后设置为包括至少一个滤波器层（7,7a，7b，7b）的滤波器层结构（70），所述滤波器层结构确定短波侧（101 ）根据预定的光谱灵敏度分布（9）通过吸收小于λ<0>的波长的检测器灵敏度（10）。还规定了用于根据人眼的光谱灵敏度分布（9）检测辐射（8）的辐射检测器。半导体本体可以单片集成。

47. 发明申请

US20070181894A1 Radiation emitting semi-conductor element 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US20070181894A1
公开(公告)日：2007-08-09
申请号：US10567883
申请日：2004-07-30
申请人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
发明人： Wilhelm Stein , Reiner Windisch , Ralph Wirth , Ines Pietzonka
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/40 , H01L33/02
摘要： A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).
摘要翻译：一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生活性区（7）的半导体层序列（4），其中半导体层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

48. 发明申请

US20050258444A1 Semiconductor chip for optoelectronics and method for the production thereof 有权
标题翻译：光电半导体芯片及其生产方法
公开(公告)号：US20050258444A1
公开(公告)日：2005-11-24
申请号：US11120774
申请日：2005-05-02
申请人： Reiner Windisch , Ralph Wirth , Walter Wegleiter
发明人： Reiner Windisch , Ralph Wirth , Walter Wegleiter
IPC分类号： H01L33/20 , H01L33/38 , H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/387
摘要： A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.
摘要翻译：一种具有薄膜层的光电子半导体芯片，其中形成发射电磁辐射的区域，并且具有将后侧与发射侧连接的发射侧，后侧和侧面。用于薄膜层的载体被布置在其后侧并与其连接。在发射侧形成至少一个电前侧接触结构，并且在后侧形成至少一个沟槽。沟槽限定至少一个基本上不与前侧接触结构重叠的部分区域。

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