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    • 44. 发明授权
    • Conductive-polymer electronic switch
    • 导电聚合物电子开关
    • US07179534B2
    • 2007-02-20
    • US10356394
    • 2003-01-31
    • Stephen ForrestSven Moeller
    • Stephen ForrestSven Moeller
    • B32B27/00B32B27/16
    • G11C13/0014B82Y10/00G11C13/0016H01L27/28H01L51/0037Y10T428/31504Y10T428/31678Y10T428/31855
    • A switch, used as an electronic-memory element, comprising a conductive organic polymer layer sandwiched between, and in contact with, two metallic conductive elements. In an initial post-fabrication state, the organic polymer layer is relatively highly conductive, the post-fabrication constituting a first stable state of the memory element that can serve to represent a binary bit “1 or 0,” depending which of two possible encoding conventions is employed. A relatively high voltage pulse can be passed between the two metal conductive elements, resulting in a market decrease in the current-carrying capacity of the organic polymer layer sandwiched between the two conductive elements. This change in conductivity of the organic polymer layer is generally irreversible, and constitutes a second stable state of the memory element that may be used to encode a binary bit “0” or “1,” again depending on which of two possible encoding conventions are employed. Organic-polymer-based memory elements, modified to include an additional diode-acting layer, may be fabricated in dense, two-dimensional arrays.
    • 用作电子存储元件的开关包括夹在两个金属导电元件之间并与之接触的导电有机聚合物层。 在初始后制造状态下,有机聚合物层相对高度导电,后制造构成存储元件的第一稳定状态,其可以用于表示二进制位“1或0”,取决于两种可能的编码 公约被雇用。 可以在两个金属导电元件之间通过相对高的电压脉冲,导致夹在两个导电元件之间的有机聚合物层的载流能力的市场下降。 有机聚合物层的电导率的这种变化通常是不可逆的,并且构成可以用于编码二进制位“0”或“1”的存储元件的第二稳定状态,这取决于两种可能的编码约定中的哪一种 雇用。 修改为包括另外的二极管作用层的基于有机聚合物的存储元件可以以致密的二维阵列制造。
    • 45. 发明申请
    • Method of fabricating an optoelectronic device having a bulk heterojunction
    • 制造具有体异质结的光电器件的方法
    • US20050227390A1
    • 2005-10-13
    • US10999716
    • 2004-11-30
    • Max ShteinFan YangStephen Forrest
    • Max ShteinFan YangStephen Forrest
    • H01L29/06H01L51/00H01L51/42
    • B82Y30/00H01L51/0008H01L51/0053H01L51/0078H01L51/4213H01L51/4246H01L51/4253H01L2251/308Y02E10/549Y02P70/521
    • A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.
    • 制造光电器件的方法包括:在第一电极上沉积具有突起的第一层,其中第一层包含第一有机小分子材料; 在所述第一层上沉积第二层,使得所述第二层与所述第一层物理接触; 其中突起的最小横向尺寸为第一有机小分子材料的激子扩散长度的1至5倍; 以及在所述第二层上沉积第二电极以形成所述光电器件。 还提供了制造具有体异质结的有机光电子器件的方法,其包括:通过有机气相沉积在电极上沉积具有突起的第一层; 在第一层上沉积第二层,其中第一和第二层的界面形成体异质结; 并在第二层上沉积另一电极。
    • 46. 发明申请
    • Organic triodes with novel grid structures and method of production
    • US20050196895A1
    • 2005-09-08
    • US11114715
    • 2005-04-25
    • Marc BaldoPeter PeumansStephen ForrestChangsoon Kim
    • Marc BaldoPeter PeumansStephen ForrestChangsoon Kim
    • H01L27/28H01L51/40H01L29/08
    • H01L51/0504H01L27/28H01L51/0508
    • An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer is disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided. In one method, openings are formed in an electrically conductive layer with a patterned die, which is then removed. In another method, an electrically conductive layer and a first insulating layer are etched through the mask to expose portions of a first electrode. In yet another method, a patterned die is pressed into a first organic semiconductor layer to create texture in the surface of the first organic semiconductor layer, and then removed. An electrically conductive material is then deposited onto the first organic semiconductor layer from an angle to form a grid having openings as a result of the textured surface and the angular deposition. In each of the methods, insulating layers are preferably deposited or otherwise formed during the process to completely separate the electrically conductive layer from previously and subsequently deposited organic semiconductor layers.
    • 48. 发明申请
    • Bipolar organic devices
    • 双极有机器件
    • US20050110005A1
    • 2005-05-26
    • US10721072
    • 2003-11-26
    • Stephen ForrestJiangeng Xue
    • Stephen ForrestJiangeng Xue
    • H01L51/00H01L51/30
    • H01L51/0504H01L51/002H01L51/0051H01L51/0052H01L51/0062
    • An organic device is provided, having a first electrode and a second electrode. A first organic layer is disposed between the first electrode and the second electrode. The first organic layer includes a first organic material, with a concentration of at least 50% molar, and a second organic material, with a concentration less than 50% molar. A second organic layer is also disposed between the first electrode and the second electrode. The second organic layer includes the second organic material, with a concentration of at least 50% molar, and the first organic material, with a concentration less than 50% molar. The first organic material may act as an n-dopant in the second organic layer, and the second organic material may act as a p-dopant in the first organic layer. Alternately, the first organic material may act as a p-dopant in the second organic layer, and the second organic material may act as an n-dopant in the first organic layer. Exemplary materials for the first and second organic materials include PTCDA and BTQBT. Devices that may be fabricated include organic light emitting devices, organic transistors, and organic photosensitive devices. Preferably, the electron affinity of the first organic material is within about 0.4 eV of the ionization potential of the second organic material, and more preferably within about 0.2 eV. The first and second organic layers may also be used in separate devices fabricated on the same substrate. A method of fabricating devices is provided, by co-depositing the first and second organic materials at different concentrations in different layers, such that a different material is the host in different layers.
    • 提供了具有第一电极和第二电极的有机器件。 第一有机层设置在第一电极和第二电极之间。 第一有机层包括浓度为至少50%摩尔的第一有机材料和浓度小于50%摩尔的第二有机材料。 第二有机层也设置在第一电极和第二电极之间。 第二有机层包括浓度至少为50%摩尔的第二有机材料和第一有机材料,其浓度小于50%摩尔。 第一有机材料可以在第二有机层中充当n掺杂剂,并且第二有机材料可以在第一有机层中充当p掺杂剂。 或者,第一有机材料可以在第二有机层中用作p掺杂剂,并且第二有机材料可以在第一有机层中充当n掺杂剂。 用于第一和第二有机材料的示例性材料包括PTCDA和BTQBT。 可以制造的器件包括有机发光器件,有机晶体管和有机光敏器件。 优选地,第一有机材料的电子亲和力在第二有机材料的电离电位的约0.4eV内,更优选在约0.2eV内。 第一和第二有机层也可以用在同一衬底上制造的分开的器件中。 提供一种制造器件的方法,通过在不同层中以不同浓度共沉积第一和第二有机材料,使得不同的材料是不同层中的主体。