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41. 发明授权

US07125797B2 Contact structure of semiconductor device and method of forming the same 有权
标题翻译：半导体器件的接触结构及其形成方法
公开(公告)号：US07125797B2
公开(公告)日：2006-10-24
申请号：US10915538
申请日：2004-08-11
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/823814 , H01L21/26533 , H01L21/28506 , H01L21/823878 , H01L24/05 , H01L29/0847 , H01L29/78 , H01L2924/13091 , H01L2924/00
摘要： A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
摘要翻译：半导体的接触结构包括衬底，与衬底的极性相反的导电掺杂层，在衬底中形成导电掺杂层，形成在导电掺杂层上的导电层和形成的绝缘掺杂层在衬底中的导电掺杂层下面。

42. 发明授权

US07112862B2 Light emitting and/or detecting device and method of manufacturing the same 有权
标题翻译：发光和/或检测装置及其制造方法
公开(公告)号：US07112862B2
公开(公告)日：2006-09-26
申请号：US10965203
申请日：2004-10-15
申请人： Eun-kyung Lee , Byoung-lyong Choi , Jun-young Kim
发明人： Eun-kyung Lee , Byoung-lyong Choi , Jun-young Kim
IPC分类号： H01L31/00
CPC分类号： H01L31/107 , H01L31/105 , H01L33/34
摘要： A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type dopant, and removing a portion of the insulating layer to expose a predetermined area of the substrate; forming a doping layer doped with an opposite dopant to the dopant of the substrate by applying a dopant on the exposed area of the substrate and heat treating the substrate to create a light conversion effect in a p-n junction between the substrate and the doping layer; and forming first and second electrodes on the substrate to electrically connect the doping layer. Thus, it is possible to control the diffusion depth of the doping layer with opposite dopant to the substrate in the substrate.
摘要翻译：提供一种发光和检测装置及其制造方法。该方法包括在掺杂有n型掺杂剂或p型掺杂剂的衬底上形成绝缘层，以及去除绝缘层的一部分以暴露衬底的预定区域; 通过在所述衬底的所述暴露区域上施加掺杂剂并对所述衬底进行热处理以在所述衬底和所述掺杂层之间的p-n结中产生光转换效应，从而在衬底的掺杂剂上形成掺杂有相反掺杂剂的掺杂层; 以及在所述衬底上形成第一和第二电极以电连接所述掺杂层。因此，可以将衬底中与衬底相反的掺杂剂的掺杂层的扩散深度控制。

43. 发明申请

US20060091268A1 Imaging device having stand connection 有权
标题翻译：具有立体连接的成像装置
公开(公告)号：US20060091268A1
公开(公告)日：2006-05-04
申请号：US11074158
申请日：2005-03-07
申请人： Eun-kyung Lee
发明人： Eun-kyung Lee
IPC分类号： H05K1/00
CPC分类号： H04M1/0214 , H04M1/0218 , H04M1/04 , H04M2250/52
摘要： Provided is an imaging device having a stand connector that can assume an open position for allowing connection with a stand or tripod and a closed position when not coupled with the stand. The stand connector of the imaging device includes a connector body including a hollow cavity and a female screw capable of coupling with a corresponding male screw of the stand, an insert received in the cavity of the connector body and moveable between an open position allowing coupling of the stand by screwing the screws of the connector body and the stand and a closed position substantially covering an open end of the cavity in the connector body when not coupling with the stand, and biasing means configured to bias the insert to the closed position.
摘要翻译：提供了一种成像装置，其具有支架连接器，该支架连接器可以在不与支架结合时呈现用于允许与支架或三脚架连接的关闭位置和关闭位置。成像装置的支架连接器包括连接器主体，其包括中空腔和能够与支架的相应的外螺纹连接的阴螺纹，插入件容纳在连接器本体的空腔中，并可在打开位置之间移动，通过旋转连接器主体和支架的螺钉，并且当与支架不联接时基本上覆盖连接器主体中的空腔的开口端的关闭位置以及被配置为将插入件偏置到关闭位置的偏置装置。

44. 发明申请

US20050156152A1 Flat panel display using silicon light-emitting device 有权
标题翻译：平板显示器采用硅发光器件
公开(公告)号：US20050156152A1
公开(公告)日：2005-07-21
申请号：US10752560
申请日：2004-01-08
申请人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
发明人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
IPC分类号： G09G3/28 , H01L27/15 , H01L31/0328
CPC分类号： H01L27/156
摘要： A flat panel display is provided. The flat panel display includes a silicon light-emitting device panel having a two-dimensional array of silicon light-emitting devices formed on an n- or p-type silicon-based substrate, and a fluorescent layer formed on the front surface of the silicon light-emitting device panel and emitting visible light after being excited by light emitted from the silicon light-emitting devices, wherein each of the silicon light-emitting devices comprises: a doping region formed on a surface of the substrate in such a way that the substrate is doped with a predetermined dopant of the opposite type to the substrate to a depth so that recombination of electron-hole pairs by quantum confinement effect at a p-n junction leads to light emission; and electrodes patterned on the substrate to allow the silicon light-emitting devices to emit light according to an image signal. The flat panel display includes the low-priced silicon light-emitting device panel having a two dimensional array of the silicon light-emitting devices formed on the inexpensive silicon-based substrate through series semiconductor manufacture processes. Therefore, the flat panel display can be manufactured at low cost. Furthermore, unlike a plasma display panel, a high voltage or a gas sealing process for discharge is not required, thereby increasing stability and reliability.
摘要翻译：提供平板显示器。平板显示器包括具有形成在n型或p型硅基衬底上的硅发光器件的二维阵列的硅发光器件面板和形成在硅的前表面上的荧光层发光器件面板，并且在从所述硅发光器件发射的光激发之后发射可见光，其中每个所述硅发光器件包括：在所述衬底的表面上形成的掺杂区域，衬底以与衬底相反的类型的预定掺杂剂掺杂到深度，使得通过在pn结处的量子限制效应的电子 - 空穴对的复合导致发光; 以及在基板上图案化的电极，以允许硅发光器件根据图像信号发光。平板显示器包括具有通过串联半导体制造工艺在便宜的硅基基板上形成的硅发光器件的二维阵列的低价硅发光器件面板。因此，可以以低成本制造平板显示器。此外，与等离子体显示面板不同，不需要用于放电的高电压或气体密封处理，从而提高稳定性和可靠性。

45. 发明授权

US06778578B2 Multi-wavelength surface emitting laser and method for manufacturing the same 失效
标题翻译：多波长表面发射激光器及其制造方法
公开(公告)号：US06778578B2
公开(公告)日：2004-08-17
申请号：US09835319
申请日：2001-04-17
申请人： Eun-kyung Lee , Min-hyung Chung
发明人： Eun-kyung Lee , Min-hyung Chung
IPC分类号： H01S310
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18344 , H01S5/18361 , H01S5/2063 , H01S5/4087
摘要： A multi-wavelength surface emitting laser for emitting light having different wavelengths includes a lower reflector, an active layer and an upper reflector which are integrally formed above one substrate. The multi-wavelength surface emitting laser is manufactured by forming a first surface emitting laser, partially removing a first upper reflector, a first active layer, and a first lower reflection layer by etching. A protection film is formed on the outer surface of the first surface emitting laser. A second surface emitting laser is formed by removing a second lower reflector, a second active layer, and a second upper reflection layer formed on the protection film by etching. The protection film is removed and first and second upper electrodes are formed on upper surfaces of the first and second upper reflection layers, respectively, and a lower electrode is formed on a bottom surface of the substrate.
摘要翻译：用于发射具有不同波长的光的多波长表面发射激光器包括在一个基板上一体形成的下反射器，有源层和上反射器。通过形成第一表面发射激光器，通过蚀刻部分地去除第一上反射器，第一有源层和第一下反射层来制造多波长表面发射激光器。在第一表面发射激光器的外表面上形成保护膜。通过蚀刻除去形成在保护膜上的第二下反射器，第二有源层和第二上反射层，形成第二表面发射激光器。去除保护膜，分别在第一和第二上反射层的上表面上形成第一和第二上电极，并且在基板的底表面上形成下电极。

46. 发明授权

US09181091B2 Porous nanostructure and method of manufacturing the same 有权
标题翻译：多孔纳米结构及其制造方法
公开(公告)号：US09181091B2
公开(公告)日：2015-11-10
申请号：US12959501
申请日：2010-12-03
申请人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Sun-hwak Woo
发明人： Eun-kyung Lee , Dong-mok Whang , Byoung-lyong Choi , Sun-hwak Woo
IPC分类号： H01L21/00 , B82Y40/00 , B82Y10/00 , H01L29/06 , H01L31/0352 , B82Y30/00
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L31/035209 , H01L31/035227
摘要： Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.
摘要翻译：提供一种多孔纳米结构及其制造方法。多孔纳米结构包括设置在纳米结构的外表面上的多个孔，其中多个孔的至少一部分在纳米结构内部延伸。

47. 发明授权

US08927414B2 Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device 有权
公开(公告)号：US08927414B2
公开(公告)日：2015-01-06
申请号：US13470487
申请日：2012-05-14
申请人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
发明人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
IPC分类号： H01L21/4763 , H01L23/52
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02164 , H01L21/02381 , H01L21/0245 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L29/0673 , H01L29/66045 , H01L29/66439 , H01L29/66742 , H01L29/775 , H01L29/785 , H01L29/78684 , H01L29/78696
摘要： A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.

48. 发明授权

US08835742B2 Thermoelectric device and method of manufacturing the same 有权
标题翻译：热电装置及其制造方法
公开(公告)号：US08835742B2
公开(公告)日：2014-09-16
申请号：US12501582
申请日：2009-07-13
申请人： Eun-kyung Lee , Byoung-lyong Choi , Sang-jin Lee
发明人： Eun-kyung Lee , Byoung-lyong Choi , Sang-jin Lee
IPC分类号： H01L35/32 , H01L35/26
CPC分类号： H01L35/26 , H01L35/32 , Y10T29/49002
摘要： A thermoelectric device and a method of manufacturing the same are provided. The thermoelectric device may include a nanowire having nanoparticles which are disposed on one of an exterior surface of the nanowire and an interior of the nanowire.
摘要翻译：提供了热电装置及其制造方法。热电装置可以包括具有纳米线的纳米线，纳米线设置在纳米线的外表面和纳米线的内部之一上。

49. 发明授权

US08480931B2 Composite structure and method of manufacturing the same 有权
标题翻译：复合结构及其制造方法
公开(公告)号：US08480931B2
公开(公告)日：2013-07-09
申请号：US12766258
申请日：2010-04-23
申请人： Byoung-lyong Choi , Eun-kyung Lee , Dong-mok Whang , Byung-sung Kim
发明人： Byoung-lyong Choi , Eun-kyung Lee , Dong-mok Whang , Byung-sung Kim
IPC分类号： H01B1/04
CPC分类号： H01L29/413 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02527 , H01L21/02554 , H01L21/02639 , H01L21/02653 , H01L29/0665 , H01L29/0676 , H01L29/1606 , H01L51/0048
摘要： A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape.
摘要翻译：复合结构和复合结构的制造方法。复合结构包括石墨烯片; 以及通过石墨烯片取向并具有基本上一维形状的纳米结构。

50. 发明授权

US08354286B2 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
标题翻译：制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置
公开(公告)号：US08354286B2
公开(公告)日：2013-01-15
申请号：US10758136
申请日：2004-01-16
申请人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-lyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

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