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41. 发明申请

US20130122711A1 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：US20130122711A1
公开(公告)日：2013-05-16
申请号：US13294053
申请日：2011-11-10
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

42. 发明申请

US20130023064A1 Negative Ion Control for Dielectric Etch 有权
标题翻译：介质蚀刻负离子控制
公开(公告)号：US20130023064A1
公开(公告)日：2013-01-24
申请号：US13188421
申请日：2011-07-21
申请人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Mirzafer K. Abatchev , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/67069 , C23C14/345 , C23C16/505 , H01J37/32091 , H01J37/32137 , H01J2237/334 , H01J2237/3343 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L22/20 , H05H2001/4675
摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
摘要翻译：提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加到晶片表面的负离子通量。

43. 发明授权

US08337623B2 Methods for plasma cleaning an internal peripheral region of a plasma processing chamber 有权
标题翻译：用于等离子体清洁等离子体处理室的内部周边区域的方法
公开(公告)号：US08337623B2
公开(公告)日：2012-12-25
申请号：US13191402
申请日：2011-07-26
申请人： Rajinder Dhindsa
发明人： Rajinder Dhindsa
IPC分类号： B08B6/00 , H01L21/461
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32091 , H01J37/32642 , H01J37/32862
摘要： Methods for operating a plasma processing chamber for a cleaning operation of an internal region of the plasma processing chamber are disclosed. The method is performed when a semiconductor wafer is not present in the plasma processing chamber. The plasma processing chamber has a bottom electrode assembly that includes an inner bottom electrode and an outer bottom electrode, and the inner bottom electrode and outer bottom electrode are electrically isolated by a dielectric ring. The method includes configuring the inner bottom electrode to be set at a floating potential and supplying a process gas into the plasma processing chamber. And, supplying RF power to the outer bottom electrode. The supplying of RF power to the outer bottom electrode is conducted while maintaining the inner bottom electrode at the floating potential and is isolated by the dielectric ring. The RF power produces a plasma that is generated substantially outside of the inner bottom electrode and over the outer bottom electrode. The inner bottom electrode defines a region for holding the semiconductor wafer.
摘要翻译：公开了用于操作等离子体处理室用于等离子体处理室的内部区域的清洁操作的方法。当半导体晶片不存在于等离子体处理室中时，执行该方法。等离子体处理室具有包括内底电极和外底电极的底电极组件，并且内底电极和外底电极通过介电环电隔离。该方法包括将内部底部电极配置为浮置电位并将处理气体供应到等离子体处理室中。并且向外部底部电极提供RF功率。在保持内部底部电极处于浮动电位并且被绝缘环隔离的同时，向外部底部电极提供RF功率。 RF功率产生基本上在内底电极外部和外底电极上产生的等离子体。内底电极限定用于保持半导体晶片的区域。

44. 发明授权

US08262847B2 Plasma-enhanced substrate processing method and apparatus 有权
标题翻译：等离子体增强的基板处理方法和装置
公开(公告)号：US08262847B2
公开(公告)日：2012-09-11
申请号：US11618583
申请日：2006-12-29
申请人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Hudson Eric , Alexei Marakhtanov , Andreas Fischer
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

45. 发明申请

US20120171871A1 COMPOSITE SHOWERHEAD ELECTRODE ASSEMBLY FOR A PLASMA PROCESSING APPARATUS 有权
标题翻译：用于等离子体加工设备的复合淋浴电极组件
公开(公告)号：US20120171871A1
公开(公告)日：2012-07-05
申请号：US13403266
申请日：2012-02-23
申请人： Rajinder Dhindsa
发明人： Rajinder Dhindsa
IPC分类号： H01L21/3065 , B23P17/00 , B23P11/00 , B32B37/12 , B32B38/00
CPC分类号： H01L21/67069 , C23C16/45565 , C23C16/5096 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/32605 , Y10T29/49002 , Y10T29/4913 , Y10T29/49401 , Y10T29/49428 , Y10T29/49769 , Y10T29/49895 , Y10T29/49959 , Y10T156/10
摘要： A showerhead electrode for a plasma processing apparatus includes an interface gel between facing surfaces of an electrode plate and a backing plate. The interface gel maintains thermal conductivity during lateral displacements generated during temperature cycling due to mismatch in coefficients of thermal expansion. The interface gel comprises, for example, a silicone based composite filled with aluminum oxide microspheres. The interface gel can conform to irregularly shaped features and maximize surface contact area between mating surfaces. The interface gel can be pre-applied to a consumable upper electrode.
摘要翻译：用于等离子体处理装置的喷头电极包括在电极板和背板的相对表面之间的界面凝胶。界面凝胶在温度循环期间由于热膨胀系数不匹配而产生的横向位移期间保持导热性。界面凝胶包括例如填充有氧化铝微球的硅氧烷基复合材料。界面凝胶可以符合不规则形状的特征并最大化配合表面之间的表面接触面积。界面凝胶可以预先施加到可消耗的上电极上。

46. 发明授权

US08083855B2 Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body 有权
标题翻译：温度控制模块采用气体压力来控制液体冷却液和组件体之间的热导率
公开(公告)号：US08083855B2
公开(公告)日：2011-12-27
申请号：US12289657
申请日：2008-10-31
申请人： Rajinder Dhindsa , Henry Povolny , Jerry K. Antolik
发明人： Rajinder Dhindsa , Henry Povolny , Jerry K. Antolik
IPC分类号： C23C16/00 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/50 , H01L21/3065
CPC分类号： H01J37/32724 , C23C16/4557 , C23C16/45572 , C23C16/46 , G05D23/192 , G05D23/22 , H01J37/32522
摘要： A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.
摘要翻译：用于半导体处理室的温度控制模块包括导热部件主体，部件主体中的一个或多个通道和与其同心的一个或多个管，使得充满气体的空间围绕管。通过在管中流动传热液体并调节空间中的气体压力，可以精确地控制组件主体的局部温度。一个或多个加热元件可以布置在每个区域中，并且传热液体可以通过管子，以通过激活加热元件和/或改变空间中的气体的压力来实现每个区域的加热或冷却。

47. 发明授权

US08080760B2 Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor 有权
标题翻译：用于调整电容耦合射频等离子体反应器中电极间隙的装置
公开(公告)号：US08080760B2
公开(公告)日：2011-12-20
申请号：US12693066
申请日：2010-01-25
申请人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
发明人： Rajinder Dhindsa , Eric H. Lenz , Andy W. DeSepte , Lumin Li
IPC分类号： B23K10/00
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
摘要翻译：等离子体处理室包括构造成中和大气负荷的悬臂组件。该室包括围绕内部区域并具有形成在其中的开口的壁。悬臂组件包括用于支撑腔室内的衬底的衬底支撑件。悬臂组件延伸穿过开口，使得一部分位于室外。所述腔室包括致动机构，其可操作以相对于所述壁移动所述悬臂组件。

48. 发明申请

US20110281435A1 FAST GAS SWITCHING PLASMA PROCESSING APPARATUS 有权
标题翻译：快速开关等离子体加工设备
公开(公告)号：US20110281435A1
公开(公告)日：2011-11-17
申请号：US13189416
申请日：2011-07-22
申请人： S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
发明人： S. M. Reza Sadjadi , Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa
IPC分类号： H01L21/311
CPC分类号： H01J37/32091 , H01J37/32155 , H01J37/3244 , H01J37/32449
摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
摘要翻译：提供具有电极等离子体限制区的等离子体室。用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。用于在第一频率范围内向电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。

49. 发明申请

US20110277784A1 Methods for Plasma Cleaning an Internal Peripheral Region of a Plasma Processing Chamber 有权
标题翻译：等离子体处理室的内部周边区域的等离子体清洁方法
公开(公告)号：US20110277784A1
公开(公告)日：2011-11-17
申请号：US13191402
申请日：2011-07-26
申请人： Rajinder Dhindsa
发明人： Rajinder Dhindsa
IPC分类号： B08B7/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32091 , H01J37/32642 , H01J37/32862
摘要： Methods for operating a plasma processing chamber for a cleaning operation of an internal region of the plasma processing chamber are disclosed. The method is performed when a semiconductor wafer is not present in the plasma processing chamber. The plasma processing chamber has a bottom electrode assembly that includes an inner bottom electrode and an outer bottom electrode, and the inner bottom electrode and outer bottom electrode are electrically isolated by a dielectric ring. The method includes configuring the inner bottom electrode to be set at a floating potential and supplying a process gas into the plasma processing chamber. And, supplying RF power to the outer bottom electrode. The supplying of RF power to the outer bottom electrode is conducted while maintaining the inner bottom electrode at the floating potential and is isolated by the dielectric ring. The RF power produces a plasma that is generated substantially outside of the inner bottom electrode and over the outer bottom electrode. The inner bottom electrode defines a region for holding the semiconductor wafer.
摘要翻译：公开了用于操作等离子体处理室用于等离子体处理室的内部区域的清洁操作的方法。当半导体晶片不存在于等离子体处理室中时，执行该方法。等离子体处理室具有包括内底电极和外底电极的底电极组件，并且内底电极和外底电极通过介电环电隔离。该方法包括将内部底部电极配置为浮置电位并将处理气体供应到等离子体处理室中。并且向外部底部电极提供RF功率。在保持内部底部电极处于浮动电位并且被绝缘环隔离的同时，向外部底部电极提供RF功率。 RF功率产生基本上在内底电极外部和外底电极上产生的等离子体。内底电极限定用于保持半导体晶片的区域。

50. 发明申请

US20110100552A1 RADIO FREQUENCY (RF) GROUND RETURN ARRANGEMENTS 有权
标题翻译：无线电频率（RF）地面返回安排
公开(公告)号：US20110100552A1
公开(公告)日：2011-05-05
申请号：US12872984
申请日：2010-08-31
申请人： Rajinder Dhindsa , Akira Koshishi , Alexei Maraktanov
发明人： Rajinder Dhindsa , Akira Koshishi , Alexei Maraktanov
IPC分类号： C23F1/08
CPC分类号： H01J37/32807 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/32642
摘要： A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.
摘要翻译：提供射频（RF）接地返回装置，用于在处理基板期间为等离子体处理室的处理室内的RF电流提供低阻抗RF返回路径。 RF接地返回装置包括一组限制环，其被配置为围绕限制室容积，该限制室容积被配置为在衬底处理期间维持用于蚀刻衬底的等离子体。 RF接地返回装置还包括下电极支撑结构。 RF接地返回装置还包括具有RF接触的部件，其在所述一组约束环和所述下部电极支撑结构之间提供RF接触，使得所述低阻抗RF返回路径有助于将RF电流返回到RF源。

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