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41. 发明申请

US20070238313A1 METHOD FOR REPLACING A NITROUS OXIDE BASED OXIDATION PROCESS WITH A NITRIC OXIDE BASED OXIDATION PROCESS FOR SUBSTRATE PROCESSING 失效
标题翻译：基于氧化氮的氧化过程替代氧化镍基氧化工艺的方法，用于衬底加工
公开(公告)号：US20070238313A1
公开(公告)日：2007-10-11
申请号：US11278054
申请日：2006-03-30
申请人： Anthony Dip
发明人： Anthony Dip
IPC分类号： H01L21/31
CPC分类号： H01L21/3143 , H01L21/0223 , H01L21/02233 , H01L21/02249 , H01L21/02255 , H01L21/28202 , H01L21/3144 , H01L21/31658 , H01L21/31662
摘要： A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N2O-based oxidation process for the substrates including a first process gas containing N2O that thermally decomposes in a process chamber of the batch processing system to N2, O2, and NO byproducts, and generating a replacement NO-based oxidation process for the substrates including a second process gas containing N2, O2, and NO with molar concentrations that mimic that of the N2, O2, and NO byproducts in the N2O-based oxidation process. According to another embodiment of the invention, the NO-based oxidation process contains NO, O2, and an inert gas.
摘要翻译：一种在批处理系统中对多个基板进行氧化处理的方法。根据一个实施方案，该方法包括选择用于基材的基于N 2 O的氧化方法，其包括在处理室中热分解的含有N 2 O 2的第一工艺气体的批次处理系统转移到N 2 O 2 O 2和NO副产物，并且为包括含有N 2的第二工艺气体的衬底产生替代的NO基氧化工艺， O 2，O 2，和NO，其摩尔浓度模拟N 2，O 2 N和NO的摩尔浓度在N 2 O基氧化方法中的副产物。根据本发明的另一个实施方案，基于NO的氧化方法包含NO，O 2 H 2和惰性气体。

42. 发明授权

US07141765B2 Heat treating device 有权
标题翻译：热处理装置
公开(公告)号：US07141765B2
公开(公告)日：2006-11-28
申请号：US10473248
申请日：2002-03-20
申请人： Toshiyuki Makiya , Takanori Saito , Karuki Eickmann , Sanjeev Kaushal , Anthony Dip , David L. O'meara
发明人： Toshiyuki Makiya , Takanori Saito , Karuki Eickmann , Sanjeev Kaushal , Anthony Dip , David L. O'meara
IPC分类号： H05B1/02 , A21B1/00
CPC分类号： G01K7/04 , G01K1/20
摘要： A antireflective film 50 is formed on a thermocouple 42 arranged in a processing vessel 1 of a heat treatment apparatus in order to improve the transient response characteristics of the thermocouple 42. In a typical embodiment, the thermocouple 42 is made by connecting a platinum wire 43A and a platinum-rhodium alloy wire 43B, and the antireflective film 50 is composed by stacking a silicon nitride layer 50C, silicon layer 50B and a silicon nitride layer 50A in that order.
摘要翻译：为了改善热电偶42的瞬态响应特性，在设置在热处理装置的处理容器1中的热电偶42上形成防反射膜50。在一个典型的实施例中，热电偶42是通过连接铂线43A和铂 - 铑合金线43B制成的，并且抗反射膜50由叠氮化硅层50C，硅层50B和硅氮化物层50A。

43. 发明申请

US20060160288A1 Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor 有权
标题翻译：微特征填充方法和使用六氯二硅烷或其他含氯硅前体的装置
公开(公告)号：US20060160288A1
公开(公告)日：2006-07-20
申请号：US11035730
申请日：2005-01-18
申请人： Allen Leith , Anthony Dip , Seungho Oh
发明人： Allen Leith , Anthony Dip , Seungho Oh
IPC分类号： H01L21/8234
CPC分类号： H01L21/32055 , C23C16/045 , C23C16/24 , H01L21/76877
摘要： A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3 gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).
摘要翻译：提供了一种用于在处理系统中通过低压沉积工艺在衬底上的微特征中沉积含硅膜的方法。通过在处理系统的处理室中提供衬底，并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在微特征中形成含硅膜。提供了一种包含用于使用诸如HCD处理气体的含硅气体和含氯气体在微特征中形成含硅膜的处理系统的处理工具。或者，微特征可以暴露于DCS，SiCl 4和SiHCl 3气体。或者，微特征可以暴露于（SiH 4+ + HCl）。

44. 发明申请

US20050199877A1 Silicon germanium surface layer for high-k dielectric integration 有权
标题翻译：硅锗表面层用于高k电介质集成
公开(公告)号：US20050199877A1
公开(公告)日：2005-09-15
申请号：US10797876
申请日：2004-03-10
申请人： Anthony Dip , Pradip Roy , Sanjeev Kaushal , Allen Leith , Seungho Oh , Raymond Joe
发明人： Anthony Dip , Pradip Roy , Sanjeev Kaushal , Allen Leith , Seungho Oh , Raymond Joe
IPC分类号： H01L21/28 , H01L21/316 , H01L21/318 , H01L29/51 , H01L29/12 , H01L21/36 , H01L21/3205
CPC分类号： H01L21/31604 , H01L21/02142 , H01L21/0217 , H01L21/02175 , H01L21/02318 , H01L21/02323 , H01L21/02337 , H01L21/02362 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/3185 , Y10T29/41
摘要： A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.
摘要翻译：一种使用硅锗（SiGe）表面层将高k电介质层集成到半导体器件中的方法。该方法在衬底上形成SiGe表面层，并在SiGe表面层上沉积高k电介质层。在高k电介质层的沉积和沉积高k电介质层之间的退火工艺中的一个或两个期间，形成位于高k电介质层和SiGe表面层的未反应部分之间的氧化物层。该方法还包括在高k电介质层上形成电极层。

45. 发明申请

US20050056219A1 Formation of a metal-containing film by sequential gas exposure in a batch type processing system 审中-公开
标题翻译：在间歇式处理系统中通过连续气体暴露形成含金属膜
公开(公告)号：US20050056219A1
公开(公告)日：2005-03-17
申请号：US10662522
申请日：2003-09-16
申请人： Anthony Dip , Michael Toeller , Kimberly Reid
发明人： Anthony Dip , Michael Toeller , Kimberly Reid
IPC分类号： C23C16/00 , C23C16/30 , C23C16/40 , H01L20060101
CPC分类号： C23C16/45531 , C23C16/308 , C23C16/401 , C23C16/405 , C23C16/45546
摘要： A method is provided for forming a metal-containing film on a substrate by a sequential gas exposure process in a batch type processing system. A metal-containing film can be formed on a substrate by providing a substrate in a process chamber of a batch type processing system, heating the substrate, sequentially flowing a pulse of a metal-containing precursor gas and a pulse of a reactant gas in the process chamber, and repeating the flowing processes until a metal-containing film with desired film properties is formed on the substrate. The method can form a metal-oxide film, for example HfO2 and ZrO2, a metal-oxynitride film, for example HfxOzNw, and HfxOzNw, a metal-silicate film, for example HfxSiyOz and ZrxSiyOz, and a nitrogen-containing metal-silicate film, for example HfxSiyOzNw and ZrxSiyOzNw. A processing tool containing a batch type processing system for forming a metal-containing film by a sequential gas exposure process is provided.
摘要翻译：提供了一种通过在间歇式处理系统中通过连续气体曝光工艺在基板上形成含金属膜的方法。通过在间歇式处理系统的处理室中设置基板，在衬底上形成含金属膜，加热衬底，顺序地将含金属的前体气体的脉冲和反应气体的脉冲流入并且重复流动过程，直到在基底上形成具有所需膜特性的含金属膜。该方法可以形成金属氧化物膜，例如HfO 2和ZrO 2，金属 - 氮氧化物膜，例如Hf x O z N w和Hf x O z N w，金属硅酸盐膜，例如Hf x Sb y O z和Zr x S y O z，以及含氮金属硅酸盐膜，例如HfxSiyOzNw和ZrxSiyOzNw。提供了一种包含用于通过连续气体曝光工艺形成含金属膜的间歇式处理系统的加工工具。

46. 发明授权

US06799940B2 Removable semiconductor wafer susceptor 失效
标题翻译：可移动半导体晶圆基座
公开(公告)号：US06799940B2
公开(公告)日：2004-10-05
申请号：US10310141
申请日：2002-12-05
申请人： Raymond Joe , Anthony Dip
发明人： Raymond Joe , Anthony Dip
IPC分类号： B65G4907
CPC分类号： H01L21/68735 , H01L21/67109 , H01L21/67309 , H01L21/67346 , Y10S414/135 , Y10S414/137
摘要： A removable semiconductor wafer susceptor used for supporting a substrate during batch processing. The susceptor includes a flat circular central plane with a predetermined outer diameter. The susceptor is sized to fit within an inner diameter formed from wafer support ledges of a wafer transport container. The susceptor includes edges that are chamfered and rounded to lessen stress concentration at the edges. The susceptor is transported through processing by a sieving action of transport automation.
摘要翻译：用于在批量处理期间支撑基板的可移除的半导体晶片基座。基座包括具有预定外径的平圆形中心平面。基座的尺寸设计成适合于由晶片运输容器的晶片支撑壁架形成的内径。基座包括倒角和倒圆的边缘，以减少边缘处的应力集中。感受器通过运输自动化的筛选动作运输。

47. 发明授权

US08673725B2 Multilayer sidewall spacer for seam protection of a patterned structure 有权
标题翻译：用于图案结构的接缝保护的多层侧壁间隔件
公开(公告)号：US08673725B2
公开(公告)日：2014-03-18
申请号：US12751926
申请日：2010-03-31
申请人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A Conti
发明人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A Conti
IPC分类号： H01L29/78
CPC分类号： H01L21/28247 , H01L29/6656
摘要： A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.
摘要翻译：描述了具有多层侧壁间隔件和形成方法的半导体器件。在一个实施例中，该方法包括在衬底的表面上提供含有图案化结构的衬底，并且在第一衬底温度下在第一衬底温度下沉积在图案化结构上的第一间隔层，其中第一间隔层包含第一材料。该方法还包括在不同于第一衬底温度的第二衬底温度下在图案化衬底上沉积第二间隔层，其中第一和第二材料含有相同的化学元素，并且沉积步骤以任何顺序进行。然后蚀刻第一和第二间隔层以在图案化结构上形成多层侧壁间隔物。

48. 发明授权

US08466045B2 Method of forming strained epitaxial carbon-doped silicon films 有权
标题翻译：形成应变外延碳掺杂硅膜的方法
公开(公告)号：US08466045B2
公开(公告)日：2013-06-18
申请号：US12830210
申请日：2010-07-02
申请人： John Gumpher , Seungho Oh , Anthony Dip
发明人： John Gumpher , Seungho Oh , Anthony Dip
IPC分类号： H01L21/20
CPC分类号： H01L21/02661 , H01L21/02381 , H01L21/02447 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/02664
摘要： A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.
摘要翻译：用于形成应变外延碳掺杂硅（Si）膜的方法，例如用于电子器件的升高的源极和漏极区域。该方法包括提供具有外延Si表面和图案化膜的结构，在结构上非选择性地沉积掺杂碳的Si膜，所述掺杂碳的Si膜含有沉积到外延Si表面上的外延碳掺杂的Si膜以及沉积到图案化膜上的非外延碳掺杂Si膜，并且在掺碳的Si膜上非选择性地沉积Si膜，所述Si膜含有沉积到外延碳掺杂的Si膜上的外延Si膜，以及沉积在非外延碳掺杂Si膜上的非外延Si膜。该方法还包括干蚀刻去除非外延Si膜，非外延碳掺杂Si膜，并且小于整个外延Si膜以在外延Si表面上形成应变外延碳掺杂Si膜。

49. 发明授权

US07816278B2 In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition 有权
标题翻译：使用原子层沉积和化学气相沉积的高介电常数膜的原位杂化沉积
公开(公告)号：US07816278B2
公开(公告)日：2010-10-19
申请号：US12058470
申请日：2008-03-28
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/33
CPC分类号： H01L21/3141 , C23C16/02 , C23C16/405 , C23C16/44 , C23C16/45546 , C23C16/56 , H01L21/02181 , H01L21/02271 , H01L21/0228 , H01L21/02312 , H01L21/02337 , H01L21/3144 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.
摘要翻译：一种用于在批量处理系统中在多个基板上形成高k电介质膜的原位复合膜沉积方法。该方法包括将多个基板装载到批处理系统的处理室中，在沉积第一部分之后，通过原子层沉积（ALD）沉积高k电介质膜的第一部分，在沉积第一部分之后，并且不存在从所述处理室中移除所述多个基板，通过化学气相沉积（CVD）将所述高k电介质膜的第二部分沉积在所述第一部分上，以及从所述处理室中移除所述多个基板。该方法还可以包括交替重复第一和第二部分的沉积，直到高k电介质膜具有期望的厚度。该方法还可以进一步包括预处理基片并在去除之前对其原位进行后处理。

50. 发明授权

US07737051B2 Silicon germanium surface layer for high-k dielectric integration 有权
标题翻译：硅锗表面层用于高k电介质集成
公开(公告)号：US07737051B2
公开(公告)日：2010-06-15
申请号：US10797876
申请日：2004-03-10
申请人： Anthony Dip , Pradip K. Roy , Sanjeev Kaushal , Allen J. Leith , Seungho Oh , Raymond Joe
发明人： Anthony Dip , Pradip K. Roy , Sanjeev Kaushal , Allen J. Leith , Seungho Oh , Raymond Joe
IPC分类号： H01L21/36
CPC分类号： H01L21/31604 , H01L21/02142 , H01L21/0217 , H01L21/02175 , H01L21/02318 , H01L21/02323 , H01L21/02337 , H01L21/02362 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/3185 , Y10T29/41
摘要： A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.
摘要翻译：一种使用硅锗（SiGe）表面层将高k电介质层集成到半导体器件中的方法。该方法在衬底上形成SiGe表面层，并在SiGe表面层上沉积高k电介质层。在高k电介质层的沉积和沉积高k电介质层之间的退火工艺中的一个或两个期间，形成位于高k电介质层和SiGe表面层的未反应部分之间的氧化物层。该方法还包括在高k电介质层上形成电极层。

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