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41. 发明申请

US20080175529A1 Micromachined optical pressure sensor 有权
标题翻译：微加工光学压力传感器
公开(公告)号：US20080175529A1
公开(公告)日：2008-07-24
申请号：US12075922
申请日：2008-03-14
申请人： Anthony D. Kurtz , Boaz Kochman , Joseph VanDeWeert
发明人： Anthony D. Kurtz , Boaz Kochman , Joseph VanDeWeert
IPC分类号： G02B6/02 , G02B6/00
CPC分类号： G01L9/0079 , G02B6/136 , G02B2006/12138 , G02B2006/12159
摘要： A pressure sensor including: a deflectable diaphragm including a substantially central boss and channel; and, an optical waveguide having first and second arms, wherein the first arm is substantially aligned with an edge of the boss and the second arm is substantially aligned with an edge of the channel.
摘要翻译：一种压力传感器，包括：可偏转隔膜，其包括基本中心的凸台和通道; 以及具有第一和第二臂的光波导，其中所述第一臂基本上与所述凸台的边缘对齐，并且所述第二臂基本上与所述通道的边缘对准。

42. 发明申请

US20080011087A1 Silicon carbide piezoresistive pressure transducer and method of fabrication 有权
标题翻译：碳化硅压阻式压力传感器及其制造方法
公开(公告)号：US20080011087A1
公开(公告)日：2008-01-17
申请号：US11478287
申请日：2006-06-29
申请人： Anthony D. Kurtz
发明人： Anthony D. Kurtz
IPC分类号： G01L19/04
CPC分类号： G01L9/0042
摘要： A high temperature pressure transducer is fabricated from silicon carbide. A wafer of silicon carbide has reduced or active areas which act as deflecting diaphragms. Positioned on the reduced or active area is a silicon carbide sensor. The sensor is secured to the silicon carbide wafer by a glass bond. The pressure transducer is fabricated by first epitaxially growing a layer of highly N-doped 3C silicon carbide on a first silicon wafer or substrate. A second wafer of silicon carbide is selected to be a carrier wafer. The carrier wafer is etched preferentially to produce the deflecting members or reduced areas which serve as diaphragms. The 3C material on the silicon slice is patterned appropriately to provide a series of individual piezoresistors which then may be interconnected to form a Wheatstone bridge. The two wafers are joined together using a high temperature glass frit, such as a pyroceram, with the various resistor elements appropriately placed over the deflecting members of the silicon carbide wafer. The silicon on the silicon wafer is removed and various metallic contacts and interconnects are formed on the 3C silicon carbide resistor network.
摘要翻译：高温压力传感器由碳化硅制成。碳化硅晶片具有减小的或有效的区域，其作为偏转膜片。位于还原或有源区域的是碳化硅传感器。传感器通过玻璃粘合固定在碳化硅晶片上。通过在第一硅晶片或衬底上首先外延生长高N掺杂的3C碳化硅的层来制造压力传感器。碳化硅的第二晶片被选择为载体晶片。优先蚀刻载体晶片以产生用作隔膜的偏转构件或缩小区域。硅片上的3C材料被适当地图案化以提供一系列单独的压敏电阻器，然后其可以互连以形成惠斯通电桥。使用高温玻璃料（例如热解油）将两个晶片连接在一起，其中各种电阻元件适当地放置在碳化硅晶片的偏转构件上。去除硅晶片上的硅，并在3C碳化硅电阻网络上形成各种金属触点和互连。

43. 发明授权

US07284444B2 Hermetically sealed displacement sensor apparatus 有权
标题翻译：气密位移传感器装置
公开(公告)号：US07284444B2
公开(公告)日：2007-10-23
申请号：US11322721
申请日：2005-12-30
申请人： Anthony D. Kurtz , Adam Kane , Louis DeRosa
发明人： Anthony D. Kurtz , Adam Kane , Louis DeRosa
IPC分类号： G01L1/00
CPC分类号： G01B7/18 , G01L1/2231
摘要： A hermetically sealed displacement sensor has strain gauges placed on thin flexible triangular shaped beams of a load beam cell. The strain gauges are enclosed in a hermetically sealed cavity which cavity is sealed by means of a cover plate placed over the load beam cell. The thin beams are connected together by a center hub and basically form two constant moment beams. There is a top isolation diaphragm member which is convoluted and to which a force is applied which applied force is transmitted to the thin flexible beams. The beams deflect and the sensors produce an output proportional to strain. The sensors on each beam are two in number wherein one sensor is placed in a longitudinal direction with respect to the beam while the other sensor is in a transverse position. The sensors may be wired to form a full Wheatstone bridge or half bridges may be employed. The electrical output from the strain gauge bridge is proportional to the deflection of the center of the sensor.
摘要翻译：密封位移传感器具有放置在负载梁单元的薄柔性三角形梁上的应变计。应变计被封闭在密封的空腔中，该空腔通过放置在负载梁单元上的盖板密封。薄梁通过中心毂连接在一起，基本上形成两个恒定力矩梁。存在顶部的隔离膜构件，其被卷绕并且施加力，施加的力被传递到薄柔性梁。光束偏转，传感器产生与应变成比例的输出。每个光束上的传感器是两个，其中一个传感器相对于光束被放置在纵向方向上，而另一个传感器处于横向位置。传感器可以被布线以形成完整的惠斯登电桥，或者可以采用半桥。应变仪桥的电气输出与传感器中心的偏转成正比。

44. 发明授权

US07124639B1 Ultra high temperature hermetically protected wirebonded piezoresistive transducer 有权
标题翻译：超高温气密保护接线压阻式换能器
公开(公告)号：US07124639B1
公开(公告)日：2006-10-24
申请号：US11157615
申请日：2005-06-21
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： G01L19/04
CPC分类号： G01L19/0084 , G01L9/0055
摘要： An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active area of the chip. The active area is surrounded with an extending rim or frame. The active area is coated with an oxide layer which passivates the piezoresistive sensing network. The chip is then attached to a glass pedestal, which is larger in size than the sensor chip. The glass pedestal has a through hole or aperture at each corner. The entire composite structure is then mounted onto a high temperature header with the metallized regions of the header being exposed to the holes in the glass pedestal; a high temperature lead is then bonded directly to the metallized contact area of the sensor chip at one end. The leads are of sufficient length to extend into the through holes in the glass pedestal. A sealing cover is then attached to the entire composite sensor to hermetically seal all of the interconnections. The sealing cover is a glass structure, has a central aperture which corresponds to the aperture formed by the frame, allowing the active area of the sensor to be exposed to the pressure medium. The sealing cover is bonded to the periphery of the rim and to the glass supporting pedestal.
摘要翻译：超高温密封保护换能器包括具有有源区域的传感器芯片，在该有源区域上形成压电感测元件。这些元件位于硅晶片芯片的顶表面上并且具有从芯片的有源区域延伸的引线和端子。活动区域被延伸的边缘或框架包围。有源区域涂覆有钝化压阻感测网络的氧化物层。然后将芯片连接到玻璃基座，其尺寸大于传感器芯片。玻璃基座在每个角落都有一个通孔或孔。然后将整个复合结构安装到高温集管上，其中集管的金属化区域暴露于玻璃基座中的孔; 然后将高温引线一端直接粘合到传感器芯片的金属化接触区域。引线具有足够的长度以延伸到玻璃基座中的通孔中。然后将密封盖连接到整个复合传感器以密封所有的互连。密封盖是玻璃结构，具有对应于由框架形成的孔的中心孔，允许传感器的有效区域暴露于压力介质。密封盖结合到边缘的周边和玻璃支撑基座上。

45. 发明授权

US06900108B2 High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane 有权
标题翻译：在特定选择的高温力收集膜上利用掺杂控制的介电离子的β碳化硅（SiC）感测元件的高温传感器
公开(公告)号：US06900108B2
公开(公告)日：2005-05-31
申请号：US10463890
申请日：2003-06-18
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： G01K7/00 , G01K7/22 , H01L21/76
CPC分类号： G01K7/226 , G01K7/003 , Y10S438/931 , Y10S438/977
摘要： Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of crystalline doped silicon carbide. The device is a 3C—SiC/SiO2/SiC structure. This structure can be employed to fabricate high temperature devices such as piezoresistive sensors, minority carrier devices and so on. The crystalline doped silicon carbide is dielectrically isolated from the substrate. The devices are formed by processes that include bonding a pattern wafer to a substrate wafer, selective oxidation and removal of undoped silicon, and conversion of doped silicon to crystalline silicon carbide. The level of doping and the crystalline structure of the silicon carbide can be selected according to desired properties for particular applications.
摘要翻译：可用于高温感测应用的半导体器件包括碳化硅衬底，二氧化硅层和晶体掺杂碳化硅的外层。该器件是3C-SiC / SiO 2 / SiC结构。该结构可用于制造诸如压阻传感器，少数载流子装置等的高温装置。晶体掺杂碳化硅与衬底介电隔离。器件由包括将图案晶片结合到衬底晶片，选择性氧化和去除未掺杂硅的工艺形成，以及将掺杂硅转化为结晶碳化硅。可以根据特定应用的所需性质来选择掺杂水平和碳化硅的晶体结构。

46. 发明授权

US06795465B2 Dual layer color-center patterned light source 失效
标题翻译：双层彩色中心图案光源
公开(公告)号：US06795465B2
公开(公告)日：2004-09-21
申请号：US10120698
申请日：2002-04-11
申请人： Anthony D. Kurtz , Joseph R. Van DeWeert
发明人： Anthony D. Kurtz , Joseph R. Van DeWeert
IPC分类号： H01S316
CPC分类号： C30B29/12 , C30B23/00 , C30B33/04 , H01S3/0612 , H01S3/0809 , H01S3/163 , H01S3/1681 , H01S3/2375 , H01S3/2383
摘要： A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.
摘要翻译：在衬底上生长薄层的离子晶体。该晶体可以是任何类型的离子晶体，例如氯化钠或氯化钾。晶体是所选化合物的纯形式，并且可能含有污染物，这些污染物将使所产生的色心的波长发生偏移。在第一晶体层的顶部，沉积不同类型晶体的第二薄层，例如氟化锂或氟化钠。当这两层用伽马射线照射时，它们将在辐射的点处形成彩色中心。由于两个不同的离子晶体中心的晶体性质的差异，它们的色心将处于不同的波长。当以其独特的吸收频率照射时，两个分离的离子晶体中的每一个将发射不同特征波长的光。每个层可以分开制作。顶层的吸收能量大于底层的吸收能，使得底层吸收峰的层能量将通过顶层并且仅被底层吸收。在两个叠加层中形成F中心的方法有很多种，例如通过加热特定化合物的阴离子层，然后将第二离子晶体沉积在第一离子晶体上，然后沉积阴离子层在第二个晶体上，然后加热，以产生一个结构，将其延伸到不同的频率。

47. 发明授权

US06577224B2 Ultra high pressure transducers 有权
公开(公告)号：US06577224B2
公开(公告)日：2003-06-10
申请号：US09815101
申请日：2001-03-22
申请人： Anthony D. Kurtz
发明人： Anthony D. Kurtz
IPC分类号： H01L1010
CPC分类号： G01L19/0645 , G01L23/18 , H01L2224/48091 , H01L2924/00014
摘要： An oil filled pressure transducer of the type employing a metal diaphragm has a diaphragm of a greater thickness than a conventional diaphragm. The thick diaphragm exhibits and accommodates extremely large pressures and deflects to cause a lower pressure to be transmitted to the oil. Because of the large thickness of the metal diaphragm, the diaphragm dissipates a predetermined percentage of the applied pressure, whereas a corresponding fraction of the applied pressure is transmitted to the oil and hence to the silicon sensors. In this manner the diaphragm acts as a step-down transformer where a portion of the force or pressure applied to the diaphragm is transmitted to the pressure sensor. The pressure sensor receives a pressure which is a fraction of the applied pressure and the sensor is compensated to produce an output proportional to the actual pressure as applied to the thick diaphragm.

48. 发明授权

US06446510B1 Force transducer assembly 有权
标题翻译：力传感器组件
公开(公告)号：US06446510B1
公开(公告)日：2002-09-10
申请号：US09624084
申请日：2000-07-24
申请人： Anthony D. Kurtz , Robert Gardner , Richard Martin , Lou DeRosa , Estelle Anselmo
发明人： Anthony D. Kurtz , Robert Gardner , Richard Martin , Lou DeRosa , Estelle Anselmo
IPC分类号： G01N300
CPC分类号： G01L5/0033 , G01L5/0038 , G01N2203/0016 , G01N2203/0623
摘要： A force transducer assembly for measuring compressive and tensile loads applied to a force transmission device, the assembly includes a housing, a sleeve assembly and a sensor device. The housing has a hollow interior. The sleeve assembly is coupled within the interior of the housing. The sensor device is secured within the interior of the housing between a portion of the sleeve assembly and a portion of the housing. The sensor device includes first and second sensors each including an isolation diaphragm at least partially defining an oil-filled cavity, and a piezoresistive sensor positioned so as to be effected by a change in pressure in the oil-filled cavity. When a first force is applied to the apparatus in a first direction via the force transmission device, one of the isolation diaphragms is deflectable in response thereto, and when a second force is applied in a second direction opposite to the first direction, the other of the isolation diaphragms is deflectable in response thereto. This causes a corresponding output from the sensor assembly. The first direction exerts a push on the device and the second direction exerts a pull on the device.
摘要翻译：用于测量施加到力传递装置的压缩和拉伸载荷的力传感器组件，所述组件包括壳体，套筒组件和传感器装置。外壳有一个中空的内部。套筒组件联接在壳体的内部。传感器装置固定在壳体的内部之中，套筒组件的一部分与壳体的一部分之间。传感器装置包括第一和第二传感器，每个传感器包括至少部分地限定充油空腔的隔离膜片，以及压电传感器，其被定位以便通过充油空腔中的压力变化来实现。当通过力传递装置向第一方向施加第一力时，隔离隔膜中的一个可响应于该第一方向而偏转，并且当在与第一方向相反的第二方向上施加第二力时，另一方隔离隔膜可响应于此而偏转。这将导致传感器组件的相应输出。第一个方向在设备上施加推力，第二个方向在设备上施加拉力。

49. 发明授权

US06293154B1 Vibration compensated pressure sensing assembly 有权
标题翻译：振动补偿压力传感组件
公开(公告)号：US06293154B1
公开(公告)日：2001-09-25
申请号：US09459238
申请日：1999-12-10
申请人： Anthony D. Kurtz
发明人： Anthony D. Kurtz
IPC分类号： G01L906
CPC分类号： G01L19/02 , G01L9/0054
摘要： A pressure sensing device for producing an output proportional to an applied pressure irrespective of vibration and acceleration of the device, the device including: a first deflecting diaphragm formed in a first wafer and including a first plurality of piezoresistors mounted thereon, the first diaphragm being responsive to the applied pressure and vibration of the device; and, a second deflecting diaphragm formed in the first wafer and including a second plurality of piezoresistors mounted thereon, the second diaphragm being responsive only to vibration of the device; wherein, the first and second pluralities of piezoresistors are electrically coupled together to provide a common output such that they cooperatively at least partially cancel a portion of the common output associated with the vibration of the device.
摘要翻译：一种压力感测装置，用于产生与所施加的压力成比例的输出，而与装置的振动和加速度无关，该装置包括：第一偏转膜，形成在第一晶片中，并且包括安装在其上的第一多个压敏电阻器，第一膜片响应于对设备施加的压力和振动; 以及形成在所述第一晶片中并且包括安装在其上的第二多个压敏电阻的第二偏转膜，所述第二膜片仅响应所述装置的振动; 其中，所述第一和第二多个压敏电阻器电耦合在一起以提供公共输出，使得它们协同地至少部分地抵消与所述装置的振动相关联的公共输出的一部分。

50. 发明授权

US06229427B1 Covered sealed pressure transducers and method for making same 失效
标题翻译：覆盖密封压力传感器及其制造方法
公开(公告)号：US06229427B1
公开(公告)日：2001-05-08
申请号：US08897470
申请日：1997-07-21
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： H01C1010
CPC分类号： B81B7/0077 , G01L9/0042 , G01L9/0055 , G01L19/0076 , G01L19/0618 , G01L19/147
摘要： A method for sealing a transducer of a type having a diaphragm with an active region and an inactive region, a stress sensing network associated with the active region of the diaphragm, contacts associated with the inactive region of the diaphragm, and lead-outs for coupling the stress sensing network to the contacts. The method comprises oxidizing the transducer to provide a first oxide layer which covers the diaphragm, the stress sensing network, the lead-outs and the contacts. Next, a layer of semiconductive material is deposited over the first oxide layer and is then planarized to provide a planar surface having a substantially flat and bondable surface. Finally, a cover member is bonded to the planar surface of the layer which covers the inactive region of the diaphragm to hermetically seal the stress sensing network and thereby provide a sealed transducer.
摘要翻译：一种用于密封具有活动区域和非活动区域的膜片的类型的换能器的方法，与隔膜的有源区域相关联的应力感测网络，与隔膜的非活动区域相关联的触点以及用于联接的引出件应力感应网络接触。该方法包括氧化换能器以提供覆盖隔膜，应力感测网络，引出线和触点的第一氧化物层。接下来，将半导体材料层沉积在第一氧化物层上，然后被平坦化以提供具有基本上平坦且可结合的表面的平坦表面。最后，覆盖部件粘合到覆盖膜片的非活性区域的层的平坦表面上，以密封应力感测网络，从而提供密封的换能器。

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