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41. 发明授权

US06495392B2 Process for producing a semiconductor device 有权
标题翻译：半导体装置的制造方法
公开(公告)号：US06495392B2
公开(公告)日：2002-12-17
申请号：US09911172
申请日：2001-07-23
申请人： Akira Sakai , Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Tadashi Sawayama , Yuzo Koda , Takahiro Yajima
发明人： Akira Sakai , Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Tadashi Sawayama , Yuzo Koda , Takahiro Yajima
IPC分类号： H01L2100
CPC分类号： H01L31/075 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A process for producing a semiconductor device such as a photovoltaic element including a solar cell or a photosensor having a photoelectric conversion semiconductor layer formed by sequentially forming a p-type or n-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, an i-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, and an n-type or p-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material on a substrate by means of plasma CVD, characterized in that at least one i-type semiconductor as said i-type semiconductor layer is formed in a discharge chamber having a cathode electrode by means of VHF plasma CVD using a silicon-containing raw material gas, wherein a VHF power of a wattage which is two times or less that of a VHF power required for decomposing 100% of said silicon-containing raw material gas is applied to said cathode electrode.
摘要翻译：一种用于制造半导体器件的方法，诸如包括太阳能电池的光电元件或具有光电转换半导体层的光电传感器的光电元件，其顺序地形成由非单晶硅系列半导体材料构成的p型或n型半导体层由非单晶硅系列半导体材料构成的i型半导体层和由等离子体CVD在基板上的非单晶硅系半导体材料构成的n型或p型半导体层，其特征在于，通过使用含硅原料气体的VHF等离子体CVD，在具有阴极的放电室中形成至少一个作为所述i型半导体层的i型半导体，其中，功率的VHF功率是分解100％的所述含硅原料气体所需的VHF功率的两倍或更少被施加到所述阴极。

42. 发明授权

US06368944B1 Method of manufacturing photovoltaic element and apparatus therefor 有权
标题翻译：制造光伏元件的方法及其设备
公开(公告)号：US06368944B1
公开(公告)日：2002-04-09
申请号：US09664219
申请日：2000-09-18
申请人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
发明人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
IPC分类号： H01L2120
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.
摘要翻译：本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法以及用于连续批量生产该装置的装置。

43. 发明授权

US06287943B1 Deposition of semiconductor layer by plasma process 有权
标题翻译：通过等离子体工艺沉积半导体层
公开(公告)号：US06287943B1
公开(公告)日：2001-09-11
申请号：US09363825
申请日：1999-07-30
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Koda , Takahiro Yajima
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Koda , Takahiro Yajima
IPC分类号： H01L2120
CPC分类号： C23C16/509 , H01J37/32082 , H01J37/32706 , H01L21/02425 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L31/1824 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/545 , Y02P70/521
摘要： The invention provides a process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.
摘要翻译：本发明提供一种通过将原料气体引入放电室并向室内供给高频电力以通过放电分解原料气体从而在放电室内的基板上形成半导体层来制造半导体层的方法，过程包括以下步骤：提供至少非常高频（VHF）的高频功率作为高频功率; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内放电室内壁面积。高质量的半导体层可以在大面积上高速沉积。

44. 发明授权

US5968274A Continuous forming method for functional deposited films and deposition apparatus 失效
标题翻译：功能沉积膜和沉积设备的连续成型方法
公开(公告)号：US5968274A
公开(公告)日：1999-10-19
申请号：US754066
申请日：1996-11-20
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
IPC分类号： C23C14/56 , C23C16/54 , H01L31/20
CPC分类号： H01L31/206 , C23C14/562 , C23C14/568 , C23C16/545 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein semiconductor layers of desired conductivity type are deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via gas gates having means for introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off from the center of the separation chamber of the gas gate.
摘要翻译：本发明的目的在于提供具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间任何相互混合的气体，其中期望的导电类型的半导体层沉积在带状衬底上多个成膜室，通过等离子体CVD，同时带状基板沿其长度方向连续移动通过多个通过气门连接的成膜室，其具有用于将清除气体引入狭缝状分离通道其特征在于，连接形成半导体结的i型层成膜室和i型层成膜室的n型或p型层成膜室中的至少一个气门具有比i型层成膜室高的压力所述清除气体导入位置设置在形成有n型或p型层的膜上 r侧从气门的分离室的中心离开。

45. 发明授权

US5575855A Apparatus for forming a deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5575855A
公开(公告)日：1996-11-19
申请号：US433052
申请日：1995-05-03
申请人： Masahiro Kanai , Yasushi Fujioka , Takehito Yoshino , Tadashi Hori
发明人： Masahiro Kanai , Yasushi Fujioka , Takehito Yoshino , Tadashi Hori
IPC分类号： C23C16/50 , C23C16/455 , C23C16/511 , C23C16/54 , H01L21/205 , H01L31/04 , H01L31/075 , H01L31/20 , C23C16/00
CPC分类号： C23C16/455 , C23C16/511 , C23C16/545 , H01L31/075 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.
摘要翻译：沉积膜形成方法包括以下步骤：将长衬底连续地携带到真空室中或从真空室流出，使第一沉积膜形成气体沿平行于衬底的相反方向流动并与第一气体与衬底的输送方向相反排出装置进入真空室，从第一气体排出装置排出气体，使平行于基板的向前方向流动第二沉积成膜气体并等效于基板的输送方向，排出气体通过第二排气装置并且向第一和第二气体施加放电能量。

46. 发明授权

US5028488A Functional ZnSe.sub.1-x Te.sub.x :H deposited film 失效
标题翻译：功能ZnSe1-xTex：H沉积膜
公开(公告)号：US5028488A
公开(公告)日：1991-07-02
申请号：US226819
申请日：1988-08-01
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka
IPC分类号： C30B33/00 , C30B29/22 , C30B29/30 , C30B33/02 , G02F1/03 , G02F1/05 , H01L21/205 , H01L21/365 , H01L31/0248 , H01L31/0296 , H01L31/0392 , H01L31/04 , H01L31/068 , H01L31/18
CPC分类号： H01L31/1832 , H01L21/0237 , H01L21/0242 , H01L21/02422 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02966 , H01L31/0392 , H01L31/068 , Y02E10/547 , Y10T428/31678
摘要： A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe.sub.1-x Te.sub.x :H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way.These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate.These films are suited for the preparation of a high functional device such as a photovoltaic element.
摘要翻译：功能性ZnSe1-xTex：H膜具有高的掺杂效率，并且在光照射下的特性没有显着变化。所述膜的特征在于Se / Te的定量比在3:7至1:9的范围内以原子数比计，氢原子的含量为1至4原子％，晶粒的比例每单位体积的畴数在65至85体积％范围内。还提供了以上述方式表征的改进的高导电性的p型和n型ZnSe1-xTex：H：M膜（M代表掺杂剂）。这些沉积膜即使在金属，玻璃或合成树脂制成的非单晶衬底上也可以高沉积速率。这些膜适用于制备诸如光电元件的高功能器件。

47. 发明授权

US5008726A PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % 失效
标题翻译：含有1〜4原子％的Zn，Se，Te，H的PIN结光电元件
公开(公告)号：US5008726A
公开(公告)日：1991-04-16
申请号：US273070
申请日：1988-11-18
申请人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Masahiro Kanai , Tsutomu Murakami , Kozo Arao , Yasushi Fujioka , Akira Sakai
IPC分类号： H01L31/0296 , H01L31/0392 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , H01L31/02963 , H01L31/02966 , H01L31/0392 , H01L31/03925 , H01L31/075 , H01L31/1832 , Y02E10/548
摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

48. 发明授权

US4959106A Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % 失效
标题翻译：具有半导体层的光电元件包括含有至少ZN，SE和H的非单晶材料，其量为1至4原子％
公开(公告)号：US4959106A
公开(公告)日：1990-09-25
申请号：US399396
申请日：1989-08-28
申请人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
发明人： Katsumi Nakagawa , Masahiro Kanai , Shunichi Ishihara , Kozo Arao , Yasushi Fujioka , Akira Sakai , Tsutomu Murakami
IPC分类号： H01L21/363 , H01L21/365 , H01L31/0296 , H01L31/068 , H01L31/18
CPC分类号： H01L31/073 , H01L21/0237 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L31/02963 , H01L31/02966 , H01L31/068 , H01L31/1828 , H01L31/1832 , Y02E10/543 , Y02E10/547
摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.
摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子，可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。

49. 发明授权

US4804604A Light receiving member for use in electrophotography 失效
标题翻译：用于电子照相术的光接收元件
公开(公告)号：US4804604A
公开(公告)日：1989-02-14
申请号：US15924
申请日：1987-02-18
申请人： Shigeru Shirai , Keishi Saito , Takayoshi Arai , Minoru Kato , Yasushi Fujioka
发明人： Shigeru Shirai , Keishi Saito , Takayoshi Arai , Minoru Kato , Yasushi Fujioka
IPC分类号： G03G5/08 , G03G5/082 , G03G5/085
CPC分类号： G03G5/08242 , G03G5/08235 , G03G5/0825 , G03G5/08257
摘要： An electrophotographic member has an electrophotographic substrate and a light receiving layer having (i) a 0.01 to 10 .mu.m thick charge injection inhibition layer, (ii) a 1 to 100 .mu.m thick photoconductive layer and (iii) a 0.003 to 30 .mu.m thick surface layer. The charge injection inhibition layer includes a polycrystal material containing silicon atoms as the main constituent, 30 to 5.times.10.sup.4 atomic ppm of a conductivity controlling element of Group III and Group V elements uniformly or nonuniformly distributed in the thickness direction and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The photoconductive layer is an amorphous semiconductor material containing silicon atoms as the main constituent and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The surface layer includes an amorphous material: A--(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1 to 0.99999 and y is 0.6 to 0.999. The member stably provides, even upon repeated use, highly resolved visible images with clearer tone which are highly dense and high in quality.
摘要翻译：电子照相构件具有电子照相基板和光接收层，其具有（i）0.01至10μm厚的电荷注入阻挡层，（ii）1至100μm厚的光电导层和（iii）0.003至30μm 厚表层。电荷注入抑制层包括以硅原子为主要成分的多晶材料，在厚度方向上均匀或不均匀分布的III族和V族元素的导电性控制元素为30〜5×10 4原子ppm，氢为1-40原子％原子和/或卤素原子。光电导层是含有硅原子和1-40原子％氢原子和/或卤素原子的非晶半导体材料。表面层包括无定形材料：A-（SixC1-x）y：H1-y，其中x为0.1至0.99999，y为0.6至0.999。即使重复使用，该构件稳定地提供高度密集且质量高的清晰的色调的高度分辨的可见图像。

50. 发明授权

US4788120A Light receiving member for use in electrophotography having an amorphous silicon layer 失效
标题翻译：用于具有非晶硅层的电子照相的光接收元件
公开(公告)号：US4788120A
公开(公告)日：1988-11-29
申请号：US165401
申请日：1988-02-16
申请人： Shigeru Shirai , Keishi Saito , Takayoshi Arai , Minoru Kato , Yasushi Fujioka
发明人： Shigeru Shirai , Keishi Saito , Takayoshi Arai , Minoru Kato , Yasushi Fujioka
IPC分类号： H01L31/08 , G03G5/08 , G03G5/082 , G03G5/085
CPC分类号： G03G5/08221
摘要： There is provided an improved light receiving member for use in electrophotography comprising a substrate for electrophotography and a light receiving layer constituted by a photoconductive layer and a surface layer, the photoconductive layer being formed of an amorphous material containing silicon atoms as the main constituent atoms and at least one kind selected from hydrogen atoms and halogen atoms and the surface layer being formed of an amorphous material containing silicon atoms, carbon atoms and hydrogen atoms, and the amount of the hydrogen atoms contained in the surface layer being in the range of 41 to 70 atomic %.
摘要翻译：提供一种用于电子照相的改进的光接收元件，其包括用于电子照相的基底和由光电导层和表面层构成的光接收层，光电导层由含有硅原子作为主要成分原子的非晶态材料形成，以及选自氢原子和卤素原子中的至少一种，表面层由含有硅原子，碳原子和氢原子的无定形材料形成，表面层中所含的氢原子的量在41〜 70原子％。

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