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41. 发明申请

US20090139859A1 Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder 有权
标题翻译：用于溅射靶的铬氧化物粉末和由这种氧化铬粉末制造的溅射靶
公开(公告)号：US20090139859A1
公开(公告)日：2009-06-04
申请号：US11916301
申请日：2006-03-10
申请人： Hideo Takami , Masataka Yahagi
发明人： Hideo Takami , Masataka Yahagi
IPC分类号： C23C14/34 , C09K3/00
CPC分类号： C23C14/3414 , C01G37/033 , C01P2004/61 , C01P2006/80 , C04B35/12 , C04B35/62645 , C04B35/645 , C04B2235/3251 , C04B2235/446 , C04B2235/5436 , C04B2235/72 , C04B2235/721 , C04B2235/724 , C04B2235/726 , C04B2235/77
摘要： Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks.
摘要翻译：本发明提供一种由氧化铬构成的溅射靶的氧化铬粉末，其中硫为100重量ppm以下。该溅射靶含有5摩尔％以上的氧化铬或氧化铬，其中溅射靶中的硫含量为100重量ppm以下，除水分，碳，氮，硫的气体成分以外的纯度为99.95重量％以上。用于溅射靶的氧化铬粉末能够提高氧化铬本身的纯度，以及在制造溅射靶时提高烧结密度。作为使用这种氧化铬粉末的溅射靶的制造的结果，晶粒被精制，并且是不产生裂纹的均匀且致密的溅射靶。

42. 发明授权

US07279211B2 Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target 有权
标题翻译：以硫化锌为主要成分的溅射靶，利用靶形成有以硫化锌为主要成分的相变光盘保护膜的光记录媒体，溅射靶的制造方法
公开(公告)号：US07279211B2
公开(公告)日：2007-10-09
申请号：US10503296
申请日：2002-12-11
申请人： Masataka Yahagi , Hideo Takami
发明人： Masataka Yahagi , Hideo Takami
IPC分类号： B32B3/02
CPC分类号： G11B7/266 , C23C14/0629 , C23C14/3414 , G11B7/254 , G11B7/2578 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715 , G11B2007/25716 , Y10T428/21
摘要： Provided is a sputtering target and an optical recording medium having formed thereon a phase change optical disc protective film having zinc sulfide as its principal component employing such a target, as well as the manufacturing method thereof, characterized in that the sputtering target has zinc sulfide as its principal component, and is capable of adjusting the refractive index of a film containing conductive oxide in the range of 2.0 to 2.6. This sputtering target, and an optical recording medium having formed thereon a phase change optical disc protective film having zinc sulfide as its principal component employing such a target, is capable of reducing particles (dust emission) and nodules that arise during sputtering, has minimal variation in quality and is capable of improving mass productiveness, and in which the crystal grain is fine and has a high density of 90% or more.
摘要翻译：本发明提供一种溅射靶和其上形成有硫化锌作为其主要成分的相变光盘保护膜的光记录介质及其制造方法，其特征在于，溅射靶具有硫化锌作为其主要成分，并且能够调节含有导电氧化物的膜的折射率在2.0至2.6的范围内。该溅射靶及其上形成有硫化锌作为其主要成分的相变光盘保护膜的光记录介质能够减少溅射时产生的颗粒（粉尘发射）和结块，具有最小的变化并且能够提高批量生产性，并且其中晶粒细并且具有90％以上的高密度。

43. 发明申请

US20060099126A1 Sputtering target and process for producing the same 失效
标题翻译：溅射目标和生产方法
公开(公告)号：US20060099126A1
公开(公告)日：2006-05-11
申请号：US10547816
申请日：2004-02-03
申请人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
发明人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
IPC分类号： C01F17/00 , B22D7/00
CPC分类号： C04B35/645 , C04B35/547 , C04B2235/3227 , C04B2235/446 , C04B2235/5409 , C04B2235/5436 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C23C14/3414 , Y10T428/12
摘要： A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850° C. or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.
摘要翻译：一种溅射靶的制造方法，其特征在于，具有通过烧结选自构成元素的基本物质，氧化物或硫族化物的至少一种以上的粉末作为原料的含有含有La和Cu的氧化硫元素的溅射靶，其特征在于，包括：材料]在烧结工序中在850℃以下的温度下保持1小时以上，其中在反应工序后，将该材料在比反应步骤温度高的温度进行加压烧结。除了增加含有含有La和Cu的含氧硫属元素的P型透明导电材料靶的密度以外，能够以低的制造成本扩大靶，除此之外，可以消除靶中未反应物的存在，生产率可以通过抑制靶中的裂纹的产生而得到改善，也可以提高通过溅射形成的沉积物的质量。

44. 发明申请

US20050084799A1 Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target 有权
标题翻译：以硫化锌为主要成分的溅射靶，利用靶形成有以硫化锌为主要成分的相变光盘保护膜的光记录媒体，溅射靶的制造方法
公开(公告)号：US20050084799A1
公开(公告)日：2005-04-21
申请号：US10503296
申请日：2002-12-11
申请人： Masataka Yahagi , Hideo Takami
发明人： Masataka Yahagi , Hideo Takami
IPC分类号： G11B7/2548 , C04B35/547 , C23C14/06 , C23C14/34 , G11B7/26 , G11B7/24
CPC分类号： G11B7/266 , C23C14/0629 , C23C14/3414 , G11B7/254 , G11B7/2578 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715 , G11B2007/25716 , Y10T428/21
摘要： Provided is a sputtering target and an optical recording medium having formed thereon a phase change optical disc protective film having zinc sulfide as its principal component employing such a target, as well as the manufacturing method thereof, characterized in that the sputtering target has zinc sulfide as its principal component, and is capable of adjusting the refractive index of a film containing conductive oxide in the range of 2.0 to 2.6. This sputtering target, and an optical recording medium having formed thereon a phase change optical disc protective film having zinc sulfide as its principal component employing such a target, is capable of reducing particles (dust emission) and nodules that arise during sputtering, has minimal variation in quality and is capable of improving mass productiveness, and in which the crystal grain is fine and has a high density of 90% or more.
摘要翻译：本发明提供一种溅射靶和其上形成有硫化锌作为其主要成分的相变光盘保护膜的光记录介质及其制造方法，其特征在于，溅射靶具有硫化锌作为其主要成分，并且能够调节含有导电氧化物的膜的折射率在2.0至2.6的范围内。该溅射靶及其上形成有硫化锌作为其主要成分的相变光盘保护膜的光记录介质能够减少溅射时产生的颗粒（粉尘发射）和结块，具有最小的变化并且能够提高批量生产性，并且其中晶粒细并且具有90％以上的高密度。

45. 发明授权

US08758497B2 Sputtering target of sintered Ti—Nb based oxide, thin film of Ti—Nb based oxide, and method of producing the thin film 有权
标题翻译：烧结Ti-Nb系氧化物的溅射靶，Ti-Nb系氧化物的薄膜，以及薄膜的制造方法
公开(公告)号：US08758497B2
公开(公告)日：2014-06-24
申请号：US13258137
申请日：2010-03-26
申请人： Hideo Takami , Masataka Yahagi
发明人： Hideo Takami , Masataka Yahagi
IPC分类号： C09D1/00 , C23C14/08 , C04B35/495 , C04B35/462 , C04B35/46 , C04B35/499 , C04B35/626
CPC分类号： C04B35/46 , C04B35/462 , C04B35/495 , C04B35/499 , C04B35/62222 , C04B35/6262 , C04B35/645 , C04B2235/3232 , C04B2235/3251 , C04B2235/5436 , G11B7/24062 , G11B7/2578 , G11B7/266 , G11B2007/25706 , G11B2007/25715
摘要： Provided is a sputtering target of sintered Ti—Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection film, or an interference filter.
摘要翻译：本发明提供一种Ti-Nb系烧结体的溅射靶，其中，溅射靶由钛（Ti），铌（Nb）构成，其余为氧和不可避免的杂质，Ti和Nb的原子比为0.39＆ Nb /（Ti + Nb））＆nlE; 0.79。烧结Ti-Nb基氧化物的溅射靶具有高折射率和低消光系数。还提供了通过使用上述靶获得的Ti-Nb基氧化物薄膜，其能够进行高速沉积。薄膜具有优异的透射率，反射率的降低和变化小，并且可用作光学信息记录介质的干涉膜或保护膜，或作为光学记录介质的构成层的一部分。该薄膜也可以应用于玻璃基板; 也就是说，它可以用作热反射膜，抗反射膜或干涉滤光器。

46. 发明申请

US20120196076A1 Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputtering Target Comprising Titanium Oxide as Main Component 审中-公开
标题翻译：包含氧化钛作为主要组分的薄膜和包含氧化钛作为主要组分的烧结紧凑型溅射靶
公开(公告)号：US20120196076A1
公开(公告)日：2012-08-02
申请号：US13445984
申请日：2012-04-13
申请人： Hideo Takami , Masataka Yahagi
发明人： Hideo Takami , Masataka Yahagi
IPC分类号： C23C14/08 , B32B3/02 , C23C14/34
CPC分类号： G11B7/2545 , C04B35/46 , C23C14/083 , C23C14/3414
摘要： A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2 Ti+0.5 Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter.
摘要翻译：包含钛氧化物作为主要成分的薄膜包括钛，氧和铜，Ti的含量为29.0〜34.0原子％，Cu的含量为0.003〜7.7原子％以下，余量为不可避免的杂质。 O /（2 Ti + 0.5 Cu）的氧成分与金属成分的比例为0.96以上。薄膜具有高折射率和低消光系数。还提供了适用于制造上述薄膜的烧结小型溅射靶，并且可以用于获得具有优异的透射率和低反射率的薄膜，并且其作为光学信息记录介质的干涉膜或保护膜是有效的，并且获得可应用于玻璃基板的薄膜; 即可以用作热射线反射膜，防反射膜和干涉滤光片的薄膜。

47. 发明申请

US20120192763A1 Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputtering Target Comprising Titanium Oxide as Main Component 审中-公开
标题翻译：包含氧化钛作为主要组分的薄膜和包含氧化钛作为主要组分的烧结紧凑型溅射靶
公开(公告)号：US20120192763A1
公开(公告)日：2012-08-02
申请号：US13444943
申请日：2012-04-12
申请人： Hideo Takami , Masataka Yahagi
发明人： Hideo Takami , Masataka Yahagi
IPC分类号： C09D1/00
CPC分类号： G11B7/2545 , C04B35/46 , C23C14/083 , C23C14/3414
摘要： A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter.
摘要翻译：包含钛氧化物作为主要成分的薄膜包括钛，氧和铜，Ti的含量为29.0〜34.0原子％，Cu的含量为0.003〜7.7原子％以下，余量为不可避免的杂质。 O /（2Ti + 0.5Cu）的氧成分与金属成分的比例为0.96以上。薄膜具有高折射率和低消光系数。还提供了适用于制造上述薄膜的烧结小型溅射靶，并且可以用于获得具有优异的透射率和低反射率的薄膜，并且其作为光学信息记录介质的干涉膜或保护膜是有效的，并且获得可应用于玻璃基板的薄膜; 即可以用作热射线反射膜，防反射膜和干涉滤光片的薄膜。

48. 发明申请

US20120103804A1 Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact 有权
标题翻译：氧化物烧结紧凑型，其生产方法和用于生产氧化物烧结的原料粉末
公开(公告)号：US20120103804A1
公开(公告)日：2012-05-03
申请号：US13375404
申请日：2010-05-28
申请人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
发明人： Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno , Hideo Takami
IPC分类号： C23C14/08 , H01L21/34
CPC分类号： C04B35/453 , C01G15/006 , C01P2006/12 , C01P2006/40 , C01P2006/80 , C04B35/6261 , C04B35/62655 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/656 , C04B2235/6585 , C04B2235/724 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01B1/08
摘要： An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.
摘要翻译：由铟（In），镓（Ga），锌（Zn）和氧（O）制成并由式InxGayZnzOa表示的氧化物烧结体[其中x /（x + y）为0.2〜0.8，z /（x + y + z）为0.1〜0.5，a =（3/2）x +（3/2）y + z]，其中，所述氧化物烧结体中含有的挥发性杂质的浓度为20ppm以下。提供了用于生产能够实现溅射靶的高致密化和低体积电阻的IGZO靶的技术，在生产过程中防止靶的膨胀和裂纹，使结节的产生最小化，抑制异常放电，并使能 DC溅射。

49. 发明申请

US20110278511A1 Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputternig Target Comprising Titanium Oxide as Main Component 有权
标题翻译：包含氧化钛作为主要组分的薄膜和包含氧化钛作为主要组分的烧结紧密型溅射靶
公开(公告)号：US20110278511A1
公开(公告)日：2011-11-17
申请号：US13145641
申请日：2010-01-29
申请人： Hideo Takami , Masataka Yahagi
发明人： Hideo Takami , Masataka Yahagi
IPC分类号： G02B5/28 , C23C14/08 , C09D1/00 , C23C14/34
CPC分类号： G11B7/2545 , C04B35/46 , C23C14/083 , C23C14/3414
摘要： A thin film comprising titanium oxide as its main component, wherein the thin film includes titanium, oxygen and copper, content of Ti is 29.0 at % or higher and 34.0 at % or less and content of Cu is 0.003 at % or higher and 7.7 at % or less with remainder being oxygen and unavoidable impurities, and ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher. This invention aims to obtain a thin film comprising titanium oxide as its main component with a high refractive index and low extinction coefficient and a sintered compact sputtering target comprising titanium oxide as its main component which is suitable for producing the foregoing thin film, to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter.
摘要翻译：一种以氧化钛为主要成分的薄膜，其中，所述薄膜包含钛，氧，铜，Ti含量为29.0原子％以上且34.0原子％以下，Cu含量为0.003原子％以上，7.7 ％以下，其余为氧和不可避免的杂质，氧成分与金属成分的比例O /（2Ti + 0.5Cu）为0.96以上。本发明的目的在于获得包含氧化钛作为主要成分的具有高折射率和低消光系数的薄膜和包含二氧化钛作为其主要成分的烧结小型溅射靶，其适用于制造上述薄膜，以获得具有优异的透射率和低反射率的薄膜，并且作为光学信息记录介质的干涉膜或保护膜是有效的，并且获得可应用于玻璃基板的薄膜; 即可以用作热射线反射膜，防反射膜和干涉滤光片的薄膜。

50. 发明申请

US20110163279A1 OXIDE SINTERED COMPACT FOR PRODUCING TRANSPARENT CONDUCTIVE FILM 有权
标题翻译：用于生产透明导电膜的氧化物烧结紧密
公开(公告)号：US20110163279A1
公开(公告)日：2011-07-07
申请号：US13063141
申请日：2009-09-18
申请人： Masakatsu Ikisawa , Masataka Yahagi
发明人： Masakatsu Ikisawa , Masataka Yahagi
IPC分类号： H01B1/02 , C23C14/35 , C23C14/08
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/6263 , C04B35/62635 , C04B35/62695 , C04B2235/3217 , C04B2235/3262 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/5445 , C04B2235/604 , C04B2235/6562 , C23C14/086
摘要： The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element.
摘要翻译：本发明提供一种溅射靶，适用于制造无需加热基板而不在溅射期间供水的非晶透明导电膜; 其通过低温退火容易结晶; 并且在结晶后具有低电阻率。含有氧化铟作为主要成分的氧化物烧结体，同时含有锡作为第一添加元素，以及一种或多种选自锗，镍，锰和铝的元素作为第二添加元素，锡的含量为第一添加元素相对于铟和锡的总含量为2-15原子％，第二添加元素的总含量相对于铟，锡和第二添加元素的总含量为0.1-2原子％。

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