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41. 发明授权

US06586733B1 Apparatus and methods for secondary electron emission microscope with dual beam 有权
标题翻译：具有双光束的二次电子发射显微镜的装置和方法
公开(公告)号：US06586733B1
公开(公告)日：2003-07-01
申请号：US09579867
申请日：2000-05-25
申请人： Lee Veneklasen , David L. Adler
发明人： Lee Veneklasen , David L. Adler
IPC分类号： G01N23225
CPC分类号： H01J37/26 , H01J37/29 , H01J2237/0044 , H01J2237/2538 , H01J2237/2817
摘要： Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled. The apparatus further includes a detector arranged to detect secondary electrons originating from the sample as a result of the first and second electron beam interacting with the sample
摘要翻译：公开了一种用于检查样品的装置。该装置包括第一电子束发生器，其布置成将具有第一能级范围的第一电子束朝向样品的第一区域引导，第二电子束发生器被布置成将具有第二能级范围的第二电子束导向样品的第二个区域。样品的第二区域与第一区域至少部分重叠，第二能级范围与第一范围不同，从而控制由第一电子束引起的电荷积聚。该装置还包括检测器，其被布置成检测作为第一和第二电子束与样品相互作用的结果的源自样品的二次电子

42. 发明申请

US20220236199A1 X-RAY PHOTOEMISSION SYSTEM FOR 3-D LAMINOGRAPHY 有权
公开(公告)号：US20220236199A1
公开(公告)日：2022-07-28
申请号：US17721191
申请日：2022-04-14
申请人： David L. Adler
发明人： David L. Adler
IPC分类号： G01N23/04 , H01J1/78 , H01L27/02 , H01L23/498 , G21K1/00 , G01N23/044
摘要： A system is disclosed for the examination and inspection of integrated devices such as integrated circuits using 3-D laminography. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the incidence angle of the x-rays is varied to gather multiple images that allow internal three-dimensional structures of the integrated device to be determined using computed laminography. In some embodiments, the recorded images are compared with reference data to enable inspection for manufacturing quality control.

43. 发明授权

US11307152B2 X-ray photoemission apparatus for inspection of integrated devices 有权
公开(公告)号：US11307152B2
公开(公告)日：2022-04-19
申请号：US16690103
申请日：2019-11-20
申请人： David L. Adler
发明人： David L. Adler
IPC分类号： G01N23/04 , H01J1/78 , G21K7/00 , H01L27/02 , H01L23/498 , G21K1/00 , G01N23/044
摘要： An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. For some embodiments of the invention, the photoemissive structure is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In some embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

44. 发明授权

US09291578B2 X-ray photoemission microscope for integrated devices 有权
标题翻译：用于集成器件的X射线照相显微镜
公开(公告)号：US09291578B2
公开(公告)日：2016-03-22
申请号：US13507895
申请日：2012-08-03
申请人： David L. Adler
发明人： David L. Adler
IPC分类号： G21K7/00 , G01N23/04
CPC分类号： G21K1/00 , G01N23/04 , G01N2223/1006 , G01N2223/611 , G21K7/00 , H01J1/78 , H01L23/49827 , H01L27/0203
摘要： An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the integrated device and photoemissive structure are independently mounted and controlled. In other embodiments, the photoemissive device is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.
摘要翻译：公开了用于集成电路等集成装置的检查和检查的装置。 X射线通过集成器件传输，入射到吸收x射线并发射电子的光发射结构上。由发光结构发射的电子通过电子光学系统成形，以在检测器上形成发射电子的放大图像。然后记录和处理该放大的图像。在一些实施例中，集成装置和光发射结构被独立地安装和控制。在其他实施例中，光发射器件直接沉积在集成器件上。在一些实施例中，X射线的入射角度被改变以允许确定集成器件的内部三维结构。在其他实施例中，将记录的图像与参考数据进行比较，以使得能够进行制造质量控制的检查。

45. 发明授权

US08729470B2 Electron microscope with an emitter operating in medium vacuum 有权
标题翻译：电子显微镜，发射体在中等真空中工作
公开(公告)号：US08729470B2
公开(公告)日：2014-05-20
申请号：US12653812
申请日：2009-12-21
申请人： David L. Adler
发明人： David L. Adler
IPC分类号： H01J37/28
CPC分类号： H01J37/26 , H01J37/06 , H01J37/28 , H01J2237/2605
摘要： An electron microscope is described. This electron microscope includes an electron emitter that has an evaporation or sublimation rate that is significantly less than that of tungsten at the reduced pressures around the electron emitter during operation of the electron microscope. As a consequence, the electron microscope may be able to operate at reduced pressures that are much larger than those in existing electron microscopes. For example, at least during the operation the reduced pressure in the electron microscope may be greater than or equal to a medium vacuum. This capability may allow the electron microscope to use a roughing pump to provide the reduced pressure, thereby reducing the cost and complexity of the electron microscope, and improving its reliability. In addition, the size of the electron microscope may be reduced, which may enable a hand-held or portable version of the electron microscope.
摘要翻译：描述电子显微镜。该电子显微镜包括在电子显微镜操作期间在电子发射体周围的减压下具有显着小于钨的蒸发或升华速率的电子发射体。因此，电子显微镜可能能够在比现有的电子显微镜中更大的压力下工作。例如，至少在操作期间，电子显微镜中的减压可以大于或等于中等真空度。该能力可以允许电子显微镜使用粗抽泵来提供减压，从而降低电子显微镜的成本和复杂性，并提高其可靠性。此外，可以减小电子显微镜的尺寸，这可以实现电子显微镜的手持式或便携式。

46. 发明申请

US20140037052A1 X-ray photoemission microscope for integrated devices 审中-公开
标题翻译：用于集成器件的X射线照相显微镜
公开(公告)号：US20140037052A1
公开(公告)日：2014-02-06
申请号：US13507895
申请日：2012-08-03
申请人： David L. Adler
发明人： David L. Adler
IPC分类号： G21K7/00 , H01L23/48 , G21K1/00
CPC分类号： G21K1/00 , G01N23/04 , G01N2223/1006 , G01N2223/611 , G21K7/00 , H01J1/78 , H01L23/49827 , H01L27/0203
摘要： An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed.In some embodiments, the integrated device and photoemissive structure are independently mounted and controlled. In other embodiments, the photoemissive device is deposited directly onto the integrated device.In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.
摘要翻译：公开了用于集成电路等集成装置的检查和检查的装置。 X射线通过集成器件传输，入射到吸收x射线并发射电子的光发射结构上。由发光结构发射的电子通过电子光学系统成形，以在检测器上形成发射电子的放大图像。然后记录和处理该放大的图像。在一些实施例中，集成装置和光发射结构被独立地安装和控制。在其他实施例中，光发射器件直接沉积在集成器件上。在一些实施例中，X射线的入射角度被改变以允许确定集成器件的内部三维结构。在其他实施例中，将记录的图像与参考数据进行比较，以使得能够进行制造质量控制的检查。

47. 发明授权

US07816655B1 Reflective electron patterning device and method of using same 有权
标题翻译：反射电子图案形成装置及其使用方法
公开(公告)号：US07816655B1
公开(公告)日：2010-10-19
申请号：US10851041
申请日：2004-05-21
申请人： Harald F. Hess , Marian Mankos , David L. Adler
发明人： Harald F. Hess , Marian Mankos , David L. Adler
IPC分类号： H01J37/04
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/2482 , H01J2237/31789
摘要： One embodiment disclosed relates to a reflective electron patterning device. The device includes a pattern on a surface. There is an electron reflective portion of the pattern and an electron non-reflective portion of the pattern. Another embodiment disclosed relates to a method of reflecting a pattern of electrons. An electron beam is generated to be incident upon a surface. The pattern is formed on the surface. The incident electrons are reflected from a reflective portion of the pattern are prevented from being reflected from a non-reflective portion of the pattern.
摘要翻译：公开的一个实施例涉及一种反射型电子图案形成装置。该装置包括表面上的图案。图案的电子反射部分和图案的电子非反射部分。所公开的另一实施例涉及一种反映电子图案的方法。产生电子束入射到表面上。图案形成在表面上。从图案的反射部分反射的入射电子被防止从图案的非反射部分反射。

48. 发明授权

US07397941B1 Method and apparatus for electron beam inspection of repeated patterns 失效
标题翻译：电子束检查重复图案的方法和装置
公开(公告)号：US07397941B1
公开(公告)日：2008-07-08
申请号：US10702800
申请日：2003-11-06
申请人： David L. Adler
发明人： David L. Adler
IPC分类号： G06K9/00
CPC分类号： G06K9/3216 , G01N23/225 , G06T7/001 , G06T2207/10056 , G06T2207/30148
摘要： One embodiment disclosed relates to a method of detecting defects in a microminiature pattern repeated over a particular surface of an object. The method includes providing an image detector capable of resolving intensity data for each pixel of an array of m×n pixels of an image projected thereupon. An area of the surface of the object is illuminated with incident electrons, radiation from the illuminated area is detected, and image data from the detected radiation is retrieved into a data processor. If necessary, the image data is rotated for alignment purposes. The scale of the image data is then adjusted such that a dimension of a cell of the repeated pattern in the image data is equivalent to a distance across an integer number of pixels of the m×n pixel array. With the scale adjusted, then features in one cell of the repeated pattern are compared with features in another cell of the repeated pattern to detect said defects.
摘要翻译：公开的一个实施例涉及一种检测在对象的特定表面上重复的微型图案中的缺陷的方法。该方法包括提供能够分辨投影在其上的图像的m×n像素阵列的每个像素的强度数据的图像检测器。用入射电子照射物体表面的区域，检测来自被照射区域的辐射，并将来自检测到的辐射的图像数据检索到数据处理器中。如果需要，为了对准目的旋转图像数据。然后调整图像数据的尺度，使得图像数据中的重复图案的单元的尺寸等于跨越m×n像素阵列的整数像素的距离。随着刻度的调整，将重复图案的一个单元格中的特征与重复图案的另一个单元格中的特征进行比较，以检测所述缺陷。

49. 发明授权

US07351968B1 Multi-pixel electron emission die-to-die inspection 有权
标题翻译：多像素电子发射模 - 模检查
公开(公告)号：US07351968B1
公开(公告)日：2008-04-01
申请号：US11137750
申请日：2005-05-24
申请人： David L. Adler
发明人： David L. Adler
IPC分类号： H01J37/153
CPC分类号： H01J37/26 , G01N23/225 , H01J37/29 , H01J2237/24592 , H01J2237/2538 , H01J2237/2817
摘要： One embodiment disclosed is a method of detecting defects in objects. A selected surface area of an object is inspected with a multi-pixel electron microscope, and first set of data is generated having signal values representing image content of each pixel thereof. Further selected surface area of the object is inspected with said multi-pixel electron microscope, and second set of data is generated having signal values representing image content of each pixel thereof. Corresponding portions of first and second sets of data are stored in memory. Misalignment between stored portions of the first and second sets of data is detected with resolution of a fraction of a pixel, and the stored portions of first and second sets of data are aligned using subpixel interpolation to correct the detected misalignment therebetween. Finally, corresponding subportions of the aligned portions of first and second sets of data are compared to detect differences therebetween.
摘要翻译：公开的一个实施例是检测物体中的缺陷的方法。用多像素电子显微镜检查物体的选择的表面积，并且生成具有表示其每个像素的图像内容的信号值的第一组数据。用所述多像素电子显微镜检查物体的另外选择的表面积，并且生成具有表示其每个像素的图像内容的信号值的第二组数据。第一和第二组数据的相应部分被存储在存储器中。以分辨率为单位的像素的分辨率来检测第一和第二组数据的存储部分之间的对准，并且使用子像素插值来对齐第一组数据和第二组数据的存储部分，以校正其间检测到的不对准。最后，比较第一和第二组数据的对准部分的相应子部分，以检测它们之间的差异。

50. 发明授权

US07315022B1 High-speed electron beam inspection 有权
标题翻译：高速电子束检查
公开(公告)号：US07315022B1
公开(公告)日：2008-01-01
申请号：US11031091
申请日：2005-01-06
申请人： David L. Adler , Mark A. McCord , Mehdi Vaez-Iravani , Liqun Han , Kirk J. Bertsche
发明人： David L. Adler , Mark A. McCord , Mehdi Vaez-Iravani , Liqun Han , Kirk J. Bertsche
IPC分类号： H01J37/20 , G01R31/28
CPC分类号： G01R31/307 , H01J37/244 , H01J37/28 , H01J2237/0653 , H01J2237/20214 , H01J2237/20228 , H01J2237/244 , H01J2237/24507 , H01J2237/24564 , H01J2237/24592 , H01J2237/248 , H01J2237/2809 , H01J2237/2817
摘要： One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.
摘要翻译：所公开的一个实施例涉及一种用于检查半导体晶片的电子束装置，其中在不移动载物台的情况下扫描晶片表面的大致整个区域。阴极射线管（CRT）枪可以用于快速（并且成本有效地）扫描晶片上的光束。所公开的另一实施例涉及一种配置成在一个维度上扫描电子束的高速自动电子束检查器，同时沿垂直方向平移晶片。平移可以是线性的，或者可以是螺旋形路径。还公开了其他实施例。

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