专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明公开

KR1020020004425A ＣＭＰ용 슬러리 및 이의 제조 방법 无效
标题翻译：用于CMP及其制造方法的浆料
公开(公告)号：KR1020020004425A
公开(公告)日：2002-01-16
申请号：KR1020000038313
申请日：2000-07-05
申请人： 제일모직주식회사
发明人： 이길성 , 김석진 , 이재석
IPC分类号： H01L21/304
摘要： PURPOSE: A slurry for a CMP(Chemical Mechanical Polishing) and a fabricating method thereof are provided to improve polishing uniformity and reduce defects by using a silica having a large surface area in the CMP process using the silica as an abradant. CONSTITUTION: A silica slurry of a premixed state has a surface area of 100 to 300m¬2 /g in order to improve polishing uniformity of silica. The used silica is a fumed silica. The polishing uniformity of silica is determined by the surface area of the silica. The silica slurry of the premixed state is pressurized by using a high pressure pump. In the pressurizing process, the pressure is 100 to 2500. The pressurized silica slurry passes a chamber having an orifice. The surface area and a temperature of the silica slurry are increased rapidly when the pressurized silica slurry passes a chamber having an orifice.
摘要翻译：目的：提供用于CMP（化学机械抛光）的浆料及其制造方法，以通过使用二氧化硅作为研磨剂的CMP工艺中使用具有大表面积的二氧化硅来改善抛光均匀性并减少缺陷。构成：为了提高二氧化硅的研磨均匀性，预混合状态的二氧化硅浆料的表面积为100〜300m 2 / g。二氧化硅是煅制二氧化硅。二氧化硅的抛光均匀性由二氧化硅的表面积决定。通过使用高压泵对预混合状态的二氧化硅浆料进行加压。在加压过程中，压力为100至2500.加压二氧化硅浆料通过具有孔口的腔室。当加压二氧化硅浆料通过具有孔口的室时，二氧化硅浆料的表面积和温度迅速增加。

42. 发明公开

KR1020010055413A 연마용 조성물 失效
标题翻译：抛光组合物
公开(公告)号：KR1020010055413A
公开(公告)日：2001-07-04
申请号：KR1019990056617
申请日：1999-12-10
申请人： 제일모직주식회사
发明人： 이재석 , 이길성 , 김석진 , 장두원
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C01P2004/60 , C01P2006/12 , C09K3/1463 , H01L21/3212
摘要： PURPOSE: A composition for polishing is provided for accomplishing high u-scratch property and polishing uniformity to increase performance and yield of semiconductor devices when it is used in a wide area levelling process for wafers of the devices. CONSTITUTION: The polishing composition used in the wide area levelling process for wafers of the semiconductor device comprises deionized water and metal oxide fine powders such as a specific silica prepared by conventional fuming (smoking) process using SiCl4 as the raw material. The metal oxide has the first particle size distribution having a width of half the height of less than 20nm in a particle size distribution curve and the first particle size corresponding to the specific surface area ranged of 30m¬2/g to 200m¬2/g. Additionally, the metal oxide has the second particle size of less than 500nm.
摘要翻译：目的：提供用于抛光的组合物，用于实现高的划痕性能和抛光均匀性，以在半导体器件用于器件晶圆的广泛调平过程中使用时提高其性能和产量。构成：用于半导体器件晶片的广域整平工艺中的抛光组合物包括去离子水和金属氧化物细粉末，例如使用SiCl 4作为原料的常规发烟（吸烟）方法制备的特定二氧化硅。金属氧化物在粒度分布曲线中具有第一粒度分布的宽度为一半的高度小于20nm，并且对应于比表面积的第一粒径为30m 2 / g至200m 2 / g 。另外，金属氧化物具有小于500nm的第二粒径。

43. 发明公开

KR1020000006636A 반도체 소자 ＣＭＰ용 금속산화물 슬러리의 제조방법 有权
标题翻译：制备半导体器件CMP的金属氧化物浆料的方法
公开(公告)号：KR1020000006636A
公开(公告)日：2000-02-07
申请号：KR1019990034608
申请日：1999-08-20
申请人： 제일모직주식회사
发明人： 이길성 , 이재석 , 김석진 , 장두원
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C01B13/145 , C01B33/1417 , C01P2004/51 , C01P2004/61 , C01P2004/62 , C01P2006/12 , C01P2006/22 , C09K3/1463
摘要： PURPOSE: The method is to fabricate a metal oxide slurry for Chemical Mechanical Polishing(CMP) of a semiconductor device which does not include a giant particle over 1 micrometer in diameter. CONSTITUTION: The metal oxide slurry minimizes and suppresses the generation of the giant particle (over 1 micrometer in diameter), which is the main cause generating micro-scratch, by maintaining the pressure in a dispersion chamber(3) uniformly by using two intensifier pumps(2, 2'), in the method of dispersing the fluid by accelerating in high pressure. By the method, a high fineness metal oxide slurry can be obtained which hardly includes the giant particle over 1 micrometer in diameter generating micro-scratch on the polished surface and whose particle distribution is narrow and uniform.
摘要翻译：目的：该方法是制造半导体器件的化学机械抛光（CMP）的金属氧化物浆料，其不包括直径超过1微米的巨型颗粒。构成：金属氧化物浆料通过使用两个增压泵将分散室（3）中的压力均匀地最小化并抑制了产生微粒（超过1微米直径），这是产生微划痕的主要原因。（2,2'），通过在高压下加速分散流体的方法。通过该方法，可以获得高精度金属氧化物浆料，其几乎不包括直径超过1微米的巨型颗粒在抛光表面上产生微划痕并且其颗粒分布窄而均匀。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式