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41. 发明公开

KR1020050002589A 재전송 타임아웃 수를 줄이기 위한 전송 제어 프로토콜의혼잡제어 방법과 시스템 有权
标题翻译：控制方法和传输控制协议的系统，用于减少恢复时间的数量，特别是在备份数据段丢失的情况下特别注意防止发生时间的发生，并恢复丢失的分段
公开(公告)号：KR1020050002589A
公开(公告)日：2005-01-07
申请号：KR1020040049120
申请日：2004-06-28
申请人： 삼성전자주식회사
发明人： 문상준 , 김동민 , 김범준 , 이재용
IPC分类号： H04L12/801 , H04L29/06 , H04L1/18 , H04W28/10
CPC分类号： H04L69/16 , H04L47/10 , H04L47/193 , H04L69/161 , H04L69/163
摘要： PURPOSE: A congestion control method and a system of a transmission control protocol for reducing the number of retransmission time-outs are provided to update a recover sequence value used for deciding whether a quick recovery is terminated into a sequence number of lastly transmitted data segment, thereby remarkably reducing a probability of retransmission time-outs being generated. CONSTITUTION: If an ACK signal is received from a receiving terminal(200), a transmission terminal confirms whether the ACK signal is a new ACK signal(205). If so, the terminal confirms whether the new ACK signal is a partial ACK signal(250). If so, the terminal confirms whether an SRTX value is 0(260). If not, the terminal immediately retransmits a lost segment without performing a three-time counting process of a retransmission threshold value, and maintains a quick recovery mode when the quick recovery mode is ongoing(270).
摘要翻译：目的：提供一种用于减少重传超时次数的拥塞控制方法和传输控制协议系统，用于将用于判断快速恢复终止的恢复顺序值更新为最后发送的数据段的序列号，从而显着降低重发超时的概率。构成：如果从接收终端（200）接收到ACK信号，则发送终端确认ACK信号是否为新的ACK信号（205）。如果是，则终端确认新的ACK信号是否是部分ACK信号（250）。如果是，终端确认SRTX值是否为0（260）。如果不是，终端立即重发丢失的段，而不执行重传阈值的三次计数处理，并且当快速恢复模式正在进行时保持快速恢复模式（270）。

42. 发明公开

KR1020050000111A 박막 트랜지스터 표시판 有权
标题翻译：薄膜晶体管基板，用于提高信号线和驱动电路物理接触的可靠性
公开(公告)号：KR1020050000111A
公开(公告)日：2005-01-03
申请号：KR1020030040690
申请日：2003-06-23
申请人： 삼성전자주식회사
发明人： 김성만 , 김범준 , 송영구 , 공향식
IPC分类号： G02F1/136
摘要： PURPOSE: A thin film transistor substrate is provided to decrease the depth of a contact hole of a passivation layer, which exposes a signal line, by adding a dummy member under the end of the signal line or thinning the portion of the passivation layer where the end of the signal line is located to prevent an anisotropic conductive film from coming undone from the contact hole, thereby improving reliability of physical contact of the signal line and a driving circuit. CONSTITUTION: A thin film transistor substrate includes an insulating substrate, a gate line formed on the insulating substrate, a dummy member(201) formed on the insulating substrate and isolated from the gate line, a gate insulating layer(140) formed on the gate line, and a semiconductor layer(151) formed on the gate insulating layer. The thin film transistor substrate further includes a data line(171) having a source electrode, a drain electrode(175) in contact with the semiconductor layer, a passivation layer covering a portion of the semiconductor layer, which is not covered by the drain electrode and the data line, a pixel electrode(190) formed on the passivation layer and connected to the drain electrode through the first contact hole(183), and the first and second contact members(81,82) formed on the passivation layer and connected to one end of the gate line and one end of the data line through the second and third contact holes(181,182), respectively. A part of the end of the gate line is superposed on the dummy member.
摘要翻译：目的：提供一种薄膜晶体管基板，通过在信号线的末端添加一个虚拟元件或减薄钝化层的部分，减少钝化层的接触孔的深度，该钝化层暴露信号线，定位信号线的端部以防止各向异性导电膜从接触孔中脱离，从而提高信号线和驱动电路的物理接触的可靠性。构成：薄膜晶体管衬底包括绝缘衬底，形成在绝缘衬底上的栅极线，形成在绝缘衬底上并与栅极线隔离的虚拟构件（201），形成在栅极上的栅极绝缘层（140）以及形成在栅极绝缘层上的半导体层（151）。薄膜晶体管基板还包括具有源电极，与半导体层接触的漏电极（175）的数据线（171），覆盖半导体层的未被漏电极覆盖的部分的钝化层和所述数据线，形成在所述钝化层上并通过所述第一接触孔（183）连接到所述漏电极的像素电极（190）以及形成在所述钝化层上的所述第一和第二接触构件（81,82）分别通过第二和第三接触孔（181,182）到栅极线的一端和数据线的一端。栅极线的一端的一部分叠置在虚拟构件上。

43. 发明授权

KR100457523B1 단층형 전자사진 감광체 失效
标题翻译： 단층형전자사진감광체
公开(公告)号：KR100457523B1
公开(公告)日：2004-11-17
申请号：KR1020020031993
申请日：2002-06-07
申请人： 삼성전자주식회사
发明人： 요코다사부로 , 이환구 , 연경열 , 김범준 , 이남정
IPC分类号： G03G5/04
CPC分类号： G03G5/0607 , G03G5/0614
摘要： A single layered electrophotographic photoreceptor includes a photosensitive layer having at least a charge generating material, a hole transporting material, an electron transporting material, and a binder on a conductive support. The photosensitive layer includes a peculiar charge transfer complex (CT-complex) formed by the hole transporting material and the electron transporting material.
摘要翻译：单层电子照相感光体包括在导电载体上具有至少电荷产生材料，空穴传输材料，电子传输材料和粘合剂的感光层。感光层包括由空穴传输材料和电子传输材料形成的特有的电荷转移络合物（CT-复合物）。

44. 发明公开

KR1020040089882A 액체 현상용 정대전형 전자 사진 감광체 无效
标题翻译：具有包含醇溶性聚酰胺树脂和电子运输材料的保护层的液体发泡剂的正电荷型电子照相光敏剂
公开(公告)号：KR1020040089882A
公开(公告)日：2004-10-22
申请号：KR1020030023714
申请日：2003-04-15
申请人： 삼성전자주식회사
发明人： 요코다사부로 , 연경열 , 이환구 , 김범준 , 김승주
IPC分类号： G03G5/06
摘要： PURPOSE: Provided is a positive charge type electrophotographic photosensitizer, which has excellent resistance and durability against liquid developers, and thus gives excellent image quality. CONSTITUTION: The positive charge type electrophotographic photosensitizer includes a conductive substrate, and a photosensitive layer and a protective layer formed on the top of the substrate, successively. In the photosensitizer, the protective layer comprises an alcohol-soluble polyamide resin and an electron transport material. Particularly, the electron transport material is an electron transportable pigment having an average diameter of 0.1 to 0.2 micrometers. Further, content of the electron transport material is 10-200 parts by weight based on 100 parts by weight of the alcohol-soluble polyamide resin.
摘要翻译：目的：提供一种正电荷型电子照相光敏剂，其对液体显影剂具有优异的电阻和耐久性，因此具有优异的图像质量。构成：正电荷型电子照相光敏剂依次包括导电性基材和形成在基材顶部的感光层和保护层。在光敏剂中，保护层包含醇溶性聚酰胺树脂和电子传输材料。特别地，电子传输材料是平均直径为0.1至0.2微米的可电子传输颜料。此外，基于100重量份的醇溶性聚酰胺树脂，电子传输材料的含量为10-200重量份。

45. 发明公开

KR1020040074445A 초고속 통신 단말 장치의 원격 감시 방법 有权
标题翻译：非常高速通信终端设备的远程监控方法
公开(公告)号：KR1020040074445A
公开(公告)日：2004-08-25
申请号：KR1020030010201
申请日：2003-02-18
申请人： 삼성전자주식회사
发明人： 이국희 , 김수현 , 김범준
IPC分类号： H04L12/26 , H04L12/24 , H04B3/46
CPC分类号： H04L43/065 , H04B3/46 , H04L41/0677
摘要： PURPOSE: A remote monitoring method of a very high speed communication terminal device is provided to apply an HTTP used to transceive user data as a management protocol, thereby overcoming restrictions on an existing SNMP and being easily usable in a general Internet network. CONSTITUTION: When a network connection is completed, a B-NT(Broadband-Network Termination) detects a position of a fault report server(S1). Subscriber information is transmitted to the fault report server from the B-NT(S2). The fault report server performs a subscriber level setup registration(S3). When an event is generated at a subscriber end, a terminal portion reports the generated event to the fault report server, to remotely monitor a fault(S4). The terminal portion periodically monitors a state of a router or a security modem, and periodically reports monitored results to the fault report server(S5). If a fault report is received from a specific subscriber, an operator checks entire subscriber information items through the fault report server(S6).
摘要翻译：目的：提供一种超高速通信终端设备的远程监控方法，用于将用于收发用户数据的HTTP应用于管理协议，从而克服对现有SNMP的限制，并可在一般Internet网络中轻松使用。规定：当网络连接完成时，B-NT（宽带网络终端）检测故障报告服务器的位置（S1）。用户信息从B-NT（S2）发送到故障报告服务器。故障报告服务器执行用户级别设置注册（S3）。当在用户端生成事件时，终端部分向故障报告服务器报告生成的事件，以远程监视故障（S4）。终端部分周期性地监视路由器或安全调制解调器的状态，并且将监视的结果周期性地报告给故障报告服务器（S5）。如果从特定用户接收到故障报告，则运营商通过故障报告服务器检查整个用户信息项目（S6）。

46. 发明公开

KR1019980006197A 반도체 칩 성형장치의 분리핀 및 그를 이용한 성형된 리드프레임을 분리하는 구조 失效
标题翻译：半导体芯片模制设备的分离销和使用该分离销分离模制引线框的结构
公开(公告)号：KR1019980006197A
公开(公告)日：1998-03-30
申请号：KR1019960022329
申请日：1996-06-19
申请人： 삼성전자주식회사
发明人： 김범준 , 김병만 , 방정호
IPC分类号： H01L23/48

47. 发明公开

KR1020140092626A 구리 전해 도금액, 구리 도금 장치 및 이를 이용한 구리 범프 형성 방법 审中-实审
标题翻译：铜电镀解决方案，铜电镀设备及其在电镀设备中形成半导体芯片的铜保护膜的方法
公开(公告)号：KR1020140092626A
公开(公告)日：2014-07-24
申请号：KR1020130004909
申请日：2013-01-16
申请人： 삼성전자주식회사 , 가부시키가이샤 아데카
发明人： 박명범 , 강윤덕 , 김기현 , 조윤정 , 최정식 , 아리에토모코 , 모리시마유지 , 우선아 , 토요다쇼헤이 , 김범준 , 즈시타케히로 , 요시이타카히로 , 타나카신이치
IPC分类号： C25D3/38 , C25D7/12
CPC分类号： C25D3/38 , C25D5/04 , C25D5/08 , C25D17/001 , C25D17/06 , C25D21/14
摘要： The present invention relates to a copper electroplating solution, a copper electroplating apparatus, and a method for forming a copper bump. According to the present invention, the copper electroplating solution comprises: an electrolyte aqueous solution containing water soluble copper salt, sulfide ions, and chloride ions; an accelerator, which is an organic matter containing sulfur, for accelerating copper reduction reaction; an inhibitor, which is a polyester compound, for inhibiting copper reduction reaction; and a leveler containing water soluble polymer having nitrogen dissolved as a cation in the electrolyte aqueous solution. In a plating process, the leveler supplies a nitrogen cation, and so, the local increase of current density is inhibited. The plating rate can be increased without damage to the flatness of the copper bump.
摘要翻译：铜电镀液，铜电镀装置及铜凸点的形成方法技术领域本发明涉及铜电镀液，铜电镀装置及铜凸点的形成方法。根据本发明，铜电镀液包括：含有水溶性铜盐，硫化物离子和氯离子的电解质水溶液; 加速剂，其是含硫的有机物质，用于加速铜还原反应; 用于抑制铜还原反应的抑制剂，其为聚酯化合物; 以及含有溶解在电解质水溶液中作为阳离子的氮的水溶性聚合物的矫直机。在电镀过程中，矫平机提供氮阳离子，因此电流密度的局部增加被抑制。可以增加电镀速率而不损坏铜凸块的平坦度。

48. 发明公开

KR1020130097363A 반도체 발광소자 및 그 제조방법 无效
标题翻译：发光装置及其制造方法
公开(公告)号：KR1020130097363A
公开(公告)日：2013-09-03
申请号：KR1020120018964
申请日：2012-02-24
申请人： 삼성전자주식회사
发明人： 김범준 , 김영선 , 윤석호 , 김기성 , 신동철
IPC分类号： H01L33/36 , H01L33/20 , H01L33/22 , H01L33/12
CPC分类号： H01L33/62 , H01L33/145 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve a current dispersion effect by forming a current blocking region as an isolation region within a semiconductor layer. CONSTITUTION: A light emitting structure is formed on a conductive substrate. A first conductivity type contact layer (30) is arranged between the conductive substrate and a first conductivity type semiconductor layer. A conductive via is extended from the conductive substrate. The conductive via is connected to a second conductivity type semiconductor layer. A current blocking region (60) is formed in a region adjacent to the conductive via.
摘要翻译：目的：提供一种发光器件及其制造方法，通过在半导体层内形成作为隔离区域的电流阻挡区域来提高电流分散效果。构成：在导电性基板上形成发光结构。第一导电型接触层（30）布置在导电基板和第一导电类型半导体层之间。导电通孔从导电衬底延伸。导电通孔连接到第二导电类型半导体层。在与导电通孔相邻的区域中形成电流阻挡区域（60）。

49. 发明公开

KR1020130042784A 질화물 반도체 발광소자 无效
标题翻译：氮化物半导体发光器件
公开(公告)号：KR1020130042784A
公开(公告)日：2013-04-29
申请号：KR1020110106865
申请日：2011-10-19
申请人： 삼성전자주식회사
发明人： 김범준 , 김성태 , 김영선 , 윤석호 , 김기성 , 이호철
IPC分类号： H01L33/14
CPC分类号： H01L33/14 , H01L33/32
摘要： PURPOSE: A nitride semiconductor light emitting diode is provided to improve a current dispersion effect by increasing current spreading in a horizontal direction. CONSTITUTION: An active layer is formed on an n-type nitride semiconductor layer(104). A p-type nitride semiconductor layer(106) is formed on the active layer. A current spreading layer(103) is formed in the surface or the inner part of the n-type nitride semiconductor layer. The current spreading layer includes a 2D electron gas layer. The band gap energy of the current spreading layer is larger than the band gap energy of the n-type nitride semiconductor layer.
摘要翻译：目的：提供氮化物半导体发光二极管，以通过增加水平方向的电流扩展来改善电流色散效应。构成：在n型氮化物半导体层（104）上形成有源层。在有源层上形成p型氮化物半导体层（106）。在n型氮化物半导体层的表面或内部形成有电流扩散层（103）。电流扩散层包括2D电子气体层。电流扩展层的带隙能量大于n型氮化物半导体层的带隙能量。

50. 发明公开

KR1020130011766A 질화물계 반도체 발광소자 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：KR1020130011766A
公开(公告)日：2013-01-30
申请号：KR1020110073160
申请日：2011-07-22
申请人： 삼성전자주식회사
发明人： 맹종선 , 김범준 , 김기성 , 윤석호 , 김성태
IPC分类号： C09K11/64 , C09K11/62 , H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/12 , C09K11/64 , C09K11/62 , H01L29/06 , H01L33/00 , H01L33/04
摘要： PURPOSE: A nitride-based semiconductor electroluminescence device is provided to reduce electromagnetic waves and generation of dislocation defects and to have excellent crystallinity. CONSTITUTION: A nitride-based semiconductor electroluminescence device(100) comprises a bowing-preventing layer(20) with a composition indicated in chemical formula: Al_xGa_(1-x)N, and a light-emitting structure which is formed on the bowing-preventing layer, and comprises a first conductive nitride semiconductor layer(30), an active layer(40), and a second conductive nitride semiconductor layer(50). In the chemical formula, 0.01ΔxΔ0.04. The thickness of the bowing-preventing layer is 0.2-4 times thicker than the thickness of the first conductive nitride semiconductor layer, and has a thickness of 0.5-4 micron. The first conductive nitride semiconductor layer has a composition indicated in chemical formula: Al_yGa_(1-y)N, where 0Δy
摘要翻译：目的：提供氮化物半导体电致发光器件，以减少电磁波和产生位错缺陷并具有优异的结晶度。构成：氮化物系半导体场致发光元件（100）具有化学式Al_xGa_（1-x）N表示的组合物的防弓层（20），以及形成在弯曲形状的发光结构体并且包括第一导电氮化物半导体层（30），有源层（40）和第二导电氮化物半导体层（50）。在化学式中，0.01ΔxΔ0.04。防弯曲层的厚度比第一导电氮化物半导体层的厚度厚0.2-4倍，厚度为0.5-4微米。第一导电氮化物半导体层具有化学式：Al_yGa_（1-y）N表示的组成，其中0Δy

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